BT151-650L

BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 Rev. 05 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR in a SOT78 plastic package. 1.2 Features and benefits High reliability High surge current capability High thermal cycling performance 1.3 Applications Ignition circuits Motor control Protection Circuits Static switching 1.4 Quick reference data Table 1. VDRM IT(AV) IT(RMS) Quick reference Conditions Min half sine wave; Tmb ≤ 109 °C; see Figure 3 full sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 Typ Max 650 7.5 12 Unit V A A repetitive peak off-state voltage average on-state current RMS on-state current gate trigger current Symbol Parameter Static characteristics IGT 2 5 mA NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 2. Pinning information Table 2. Pin 1 2 3 mb K A G mb Pinning information Symbol Description cathode anode gate anode mb A G sym037 Simplified outline Graphic symbol K 123 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-650L TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 2 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 4. Limiting values Table 4. Symbol VDRM VRRM IT(AV) IT(RMS) dIT/dt IGM PGM Tstg Tj ITSM Limiting values Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current rate of rise of on-state current peak gate current peak gate power storage temperature junction temperature non-repetitive peak on-state current I2t for fusing average gate power peak reverse gate voltage half sine wave; tp = 8.3 ms; Tj(init) = 25 °C half sine wave; tp = 10 ms; Tj(init) = 25 °C; see Figure 4; see Figure 5 tp = 10 ms; sine-wave pulse over any 20 ms period half sine wave; Tmb ≤ 109 °C; see Figure 3 full sine wave; Tmb ≤ 109 °C; see Figure 1; see Figure 2 IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs Conditions Min -40 Max 650 650 7.5 12 50 2 5 150 125 132 120 72 0.5 5 Unit V V A A A/µs A W °C °C A A A2s W V In accordance with the Absolute Maximum Rating System (IEC 60134). I2t PG(AV) VRGM 25 IT(RMS) (A) 20 001aaa954 16 IT(RMS) (A) 12 001aaa999 15 8 10 4 5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 Tmb (°C) 150 Fig 2. Fig 1. RMS on-state current as a function of surge duration; maximum values RMS on-state current as a function of mounting base temperature; maximum values BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 3 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 15 Ptot (W) 1.9 2.2 10 4 conduction angle (degrees) 30 60 90 120 180 0 0 2 4 6 form factor a 4 2.8 2.2 1.9 1.57 2.8 003aab830 a = 1.57 5 α 8 IT(AV) (A) Fig 3. 103 Total power dissipation as a function of average on-state current; maximum values 001aaa956 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 tp (s) 10−2 Fig 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 4 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 160 ITSM (A) 120 003aab829 80 IT ITSM 40 t tp Tj initial = 25 °C max 0 1 10 102 number of cycles 103 Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 1.3 Unit K/W thermal resistance from see Figure 6 junction to mounting base thermal resistance from junction to ambient free air Rth(j-a) - 60 - K/W 10 Zth(j-mb) (K/W) 001aaa962 1 10−1 P δ= tp T 10−2 tp T t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 5 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 6. Characteristics Table 6. Symbol IGT IL IH VT VGT Characteristics Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 VD = 12 V; Tj = 25 °C; see Figure 9 VD = 12 V; Tj = 25 °C; see Figure 10 IT = 23 A; Tj = 25 °C; see Figure 11 IT = 100 mA; VD = 12 V; Tj = 25 °C; see Figure 12 IT = 100 mA; VD = 650 V; Tj = 125 °C ID IR dVD/dt off-state current reverse current rate of rise of off-state voltage VD = 650 V; Tj = 125 °C VR = 650 V; Tj = 125 °C VDM = 435 V; Tj = 125 °C; exponential waveform; gate open circuit VDM = 435 V; Tj = 125 °C; RGK = 100 Ω; exponential waveform; see Figure 7 tgt tq gate-controlled turn-on time commutated turn-off time ITM = 40 A; VD = 650 V; IG = 100 mA; dIG/dt = 5 A/µs; Tj = 25 °C VDM = 435 V; Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω Min 0.25 50 200 Typ 2 10 7 1.4 0.6 0.4 0.1 0.1 130 1000 2 70 Max 5 40 20 1.75 1.5 0.5 0.5 Unit mA mA mA V V V mA mA V/µs V/µs µs µs Static characteristics Dynamic characteristics 104 dVD/dt (V/μs) 103 (1) 001aaa949 3 IGT IGT(25°C) 2 001aaa952 (2) 102 1 10 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 8. Normalized gate trigger current as a function of junction temperature Fig 7. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 6 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 3 IL IL(25°C) 2 001aaa951 3 IH IH(25°C) 2 001aaa950 1 1 0 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 9. Normalized latching current as a function of junction temperature 30 001aaa959 Fig 10. Normalized holding current as a function of junction temperature 1.6 VGT VGT(25°C) 1.2 001aaa953 IT (A) 20 (1) (2) (3) 10 0.8 0 0 0.5 1 1.5 VT (V) 2 0.4 −50 0 50 100 Tj (°C) 150 Fig 12. Normalized gate trigger voltage as a function of junction temperature Fig 11. On-state current as a function of on-state voltage BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 7 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 13. Package outline SOT78 (TO-220AB) BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 8 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 8. Revision history Table 7. Revision history Release date 20090302 Data sheet status Product data sheet Change notice Supersedes BT151_SER_L_R_4 Document ID BT151-650L_5 Modifications: BT151_SER_L_R_4 BT151_SERIES_3 (9397 750 13159) BT151_SERIES_2 BT151_SERIES_1 • • Package outline updated. Type number BT151-650L separated from data sheet BT151_SER_L_R_4. Product data sheet Product specification Product specification Product specification BT151_SERIES_3 BT151_SERIES_2 BT151_SERIES_1 - 20061023 20040607 19990601 19970901 BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 9 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT151-650L_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 March 2009 10 of 11 NXP Semiconductors BT151-650L SCR, 12 A, 5 mA, 650 V, SOT78 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 March 2009 Document identifier: BT151-650L_5