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BT152-800R_11

BT152-800R_11

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    BT152-800R_11 - High thermal cycling performance Very high current surge capability - NXP Semiconduc...

  • 数据手册
  • 价格&库存
BT152-800R_11 数据手册
TO -22 0A B BT152-800R SCR Rev. 2 — 9 June 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 1.2 Features and benefits  High thermal cycling performance  High voltage capability  Planar passivated for voltage ruggedness and reliability  Very high current surge capability 1.3 Applications  Ignition circuits  Motor control  Protection circuits e.g. SMPS inrush current  Voltage regulation 1.4 Quick reference data Table 1. Symbol VDRM VRRM ITSM Quick reference data Parameter repetitive peak off-state voltage repetitive peak reverse voltage non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms; see Figure 4; see Figure 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms IT(AV) IT(RMS) average on-state current RMS on-state current half sine wave; Tmb ≤ 103 °C; see Figure 3 half sine wave; see Figure 1; see Figure 2 VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 7 Conditions Min Typ Max Unit 800 800 200 V V A - - 220 13 20 A A A Static characteristics IGT gate trigger current 3 32 mA NXP Semiconductors BT152-800R SCR 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description K A G A cathode anode gate mounting base; connected to anode mb A G sym037 Simplified outline Graphic symbol K 123 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BT152-800R TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 4. Limiting values Table 4. Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Limiting values Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current non-repetitive peak on-state current I2t for fusing rate of rise of on-state current peak gate current peak reverse gate voltage peak gate power average gate power storage temperature junction temperature over any 20 ms period half sine wave; Tmb ≤ 103 °C; see Figure 3 half sine wave; see Figure 1; see Figure 2 half sine wave; Tj(init) = 25 °C; tp = 10 ms; see Figure 4; see Figure 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj tp = 10 ms; sine-wave pulse IT = 50 A; IG = 200 mA; dIG/dt = 200 mA/µs Conditions Min -40 Max 800 800 13 20 200 220 200 200 5 5 20 0.5 150 125 Unit V V A A A A A2s A/µs A V W W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 2 of 12 NXP Semiconductors BT152-800R SCR 25 IT(RMS) (A) 20 003aag276 50 IT(RMS) (A) 45 40 35 003aag277 15 30 25 10 20 15 5 10 5 0 -50 0 50 100 Tmb (°C) 150 0 10-2 10-1 1 10 surge duration (s) Fig 1. RMS on-state current as a function of mounting base temperature; maximum values Fig 2. RMS on-state current as a function of surge duration; maximum values 003aag275 30 Ptot (W) 25 92 Tmb(max) (°C) conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 a = 1.57 2.2 2.8 4 1.9 20 α 103 15 10 114 5 0 0 2 4 6 8 10 12 IT(AV) (A) 14 125 Fig 3. Total power dissipation as a function of average on-state current; maximum values BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 3 of 12 NXP Semiconductors BT152-800R SCR 220 I TSM 200 (A) 180 160 140 120 100 80 60 40 20 0 1 10 102 103 IT 003aad221 ITSM t tp Tj(init) = 25 °C max number of cycles 104 Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aad222 103 ITSM (A) (1) 102 IT ITSM 10 10−5 t tp Tj(init) = 25 °C max 10−4 10−3 tp (s) 10−2 Fig 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 4 of 12 NXP Semiconductors BT152-800R SCR 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 6 in free air Min Typ 60 Max 1.1 Unit K/W K/W 10 Zth(j-mb) (K/W) 1 003aad212 10−1 P δ= tp T 10−2 tp T t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 5 of 12 NXP Semiconductors BT152-800R SCR 6. Characteristics Table 6. Symbol IGT IL IH VT VGT Characteristics Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 7 VD = 12 V; IG = 0.1 A; Tj = 25 °C; see Figure 8 VD = 12 V; Tj = 25 °C; see Figure 9 IT = 40 A; Tj = 25 °C; see Figure 10 VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 VD = 800 V; IT = 0.1 A; Tj = 125 °C ID IR dVD/dt off-state current reverse current rate of rise of off-state voltage VD = 800 V; Tj = 125 °C Tj = 125 °C; VR = 800 V VDM = 536 V; Tj = 125 °C; exponential waveform; gate open circuit; see Figure 12 ITM = 40 A; VD = 800 V; IG = 100 mA; dIG/dt = 5 A/µs VDM = 536 V; Tj = 125 °C; ITM = 50 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω Min 0.25 200 Typ 3 25 15 1.4 0.6 0.4 0.2 0.2 300 Max 32 80 60 1.75 1.5 1 1 Unit mA mA mA V V V mA mA V/µs Static characteristics Dynamic characteristics tgt tq gate-controlled turn-on time commutated turn-off time - 2 70 - µs µs 3 IGT IGT(25°C) 2 003aag279 3 IL IL(25°C) 003aag280 2 1 1 0 -50 0 50 100 Tj (°C) 150 0 -50 0 50 100 Tj (°C) 150 Fig 7. Normalized gate trigger current as a function of junction temperature Fig 8. Normalized latching current as a function of junction temperature BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 6 of 12 NXP Semiconductors BT152-800R SCR 3 IH IH(25°C) 003aag281 50 IT (A) 40 003aag282 2 30 20 1 10 (1) (2) (3) 0 -50 0 0 50 100 Tj (°C) 150 0 1 2 VT (V) 3 Vo = 1.06 V; Rs = 0.03 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. Normalized holding current as a function of junction temperature 1.6 VGT VGT(25°C) 1.2 003aag278 Fig 10. On-state current as a function of on-state voltage 104 (1) 003aag283 dVD/dt (V/ms) 103 (2) 0.8 102 0.4 -50 10 0 50 100 Tj (°C) 150 0 50 100 Tj (°C) 150 Fig 11. Normalized gate trigger voltage as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 7 of 12 NXP Semiconductors BT152-800R SCR 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 13. Package outline SOT78 (TO-220AB) BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 8 of 12 NXP Semiconductors BT152-800R SCR 8. Revision history Table 7. Revision history Release date 20110609 Data sheet status Product data sheet Change notice Supersedes BT152_SERIES v.1 Document ID BT152-800R v.2 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BT152-800R separated from data sheet BT152_SERIES v.1. Product specification - BT152_SERIES v.1 19970301 BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 9 of 12 NXP Semiconductors BT152-800R SCR 9. Legal information 9.1 Data sheet status Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1] [2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 10 of 12 NXP Semiconductors BT152-800R SCR In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 June 2011 11 of 12 NXP Semiconductors BT152-800R SCR 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 June 2011 Document identifier: BT152-800R
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