BT236X-800G

BT236X series F and G 6 A Four-quadrant triacs Rev. 02 — 14 March 2006 Product data sheet 1. Product profile 1.1 General description Passivated triacs in a full pack, plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and thermal cycling performance. 1.2 Features s Isolated package s High ITSM 1.3 Applications s Lamp dimmers s Motor speed controllers s High inrush resistive loads s Heating and static switching 1.4 Quick reference data s VDRM ≤ 600 V (BT236X-600_600F_600G) s VDRM ≤ 800 V (BT236X-800_800G) s ITSM ≤ 65 A (t = 20 ms) s IT(RMS) ≤ 6 A s IGT ≤ 35 mA (BT236X-600_800) s IGT ≤ 25 mA (BT236X-600F) s IGT ≤ 50 mA (BT236X-600G_800G) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; isolated mb T2 sym051 Simplified outline Symbol T1 G 123 SOT186A (3-lead TO-220F) Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 3. Ordering information Table 2: Ordering information Package Name BT236X-600 BT236X-600F BT236X-600G BT236X-800 BT236X-800G 3-lead TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 ‘full pack’ Version SOT186A Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter repetitive peak off-state voltage BT236X-600 BT236X-600F BT236X-600G BT236X-800 BT236X-800G IT(RMS) ITSM RMS on-state current non-repetitive peak on-state current full sine wave; Th ≤ 88 °C; see Figure 4 and 5 full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt I2t for fusing rate of rise of on-state current t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ G− T2− G− T2− G+ IGM VGM PGM PG(AV) Tstg Tj [1] [1] [1] [1] Conditions Min - Max 600 600 600 800 800 6 Unit V V V V V A - 65 71 21 A A A2s - 50 50 50 10 2 5 5 0.5 +150 125 A/µs A/µs A/µs A/µs A V W W °C °C peak gate current peak gate voltage peak gate power average gate power storage temperature junction temperature over any 20 ms period −40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 2 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 10 Ptot (W) 003aab307 80 T h (max) (°C) 89 α α = 180° 120° 90° α 98 5 60° 30° 107 116 0 0 2 4 6 IT(RMS) (A) 125 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aaa968 80 ITSM (A) 60 IT ITSM t tp Tj = 25 °C max 40 20 0 1 10 102 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 3 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 103 ITSM (A) IT 003aab308 ITSM t (1) T Tj(init) = 25 °C max 102 (2) 10 10-5 10-4 10-3 10-2 tp ( s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2− G+ quadrant Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 25 003aab309 IT(RMS) (A) 8 IT(RMS) (A) 003aab310 20 6 15 4 10 2 5 88 °C 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 Th (°C) 150 f = 50 Hz; Th ≤ 88 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of heatsink temperature; maximum values BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 4 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 5. Thermal characteristics Table 4: Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter Conditions [1] [2] Min - Typ 55 Max 4.5 6.5 - Unit K/W K/W K/W thermal resistance from junction to see Figure 6 heatsink see Figure 6 thermal resistance from junction to in free air ambient [1] [2] Full or half cycle with heatsink compound Full or half cycle without heatsink compound 10 Zth(j-h) (K/W) 1 (1) (2) 003aab331 (3) (4) 10−1 P tp t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 (1) Unidirectional without heatsink compound (2) Unidirectional with heatsink compound (3) Bidirectional without heatsink compound (4) Bidirectional with heatsink compound Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 5: Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Visol(rms) Parameter Conditions Min Typ Max 2500 Unit V RMS isolation voltage from all three terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; RH ≤ 65 %; clean and dust free isolation capacitance from pin 2 to external heatsink; f = 1 MHz Cisol - 10 - pF BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 5 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 7. Static characteristics Table 6: Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions BT236X-600 BT236X-800 Min IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G− T2− G− T2− G+ IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G− T2− G− T2− G+ IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 7 16 5 7 5 30 45 30 45 20 7 16 5 7 5 30 45 30 45 20 7 16 5 7 5 45 60 45 60 40 mA mA mA mA mA 5 8 11 30 35 35 35 70 5 8 11 30 25 25 25 70 5 8 11 30 50 50 50 100 mA mA mA mA Typ Max BT236X-600F Min Typ Max BT236X-600G BT236X-800G Min Typ Max Unit VT VGT on-state voltage IT = 10 A; see Figure 9 gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 125 °C - 1.3 0.7 1.65 1.5 - 1.3 0.7 1.65 1.5 - 1.3 0.7 1.65 1.5 V V 0.25 0.4 - 0.25 0.4 - 0.25 0.4 - V ID off-state current VD = VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 - 0.1 0.5 mA BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 6 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 8. Dynamic characteristics Table 7: Dynamic characteristics Conditions BT236X-600 BT236X-800 Min dVD/dt rate of rise of VDM = 0.67VDRM(max); off-state Tj = 125 °C; voltage exponential waveform; gate open circuit VDM = 400 V; Tj = 95 °C; IT(RMS) = 6 A; dIcom/dt = 3.6 A/ms; gate open circuit; see Figure 12 ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 100 Typ 250 Max 50 BT236X-600F Min Typ 250 Max BT236X-600G BT236X-800G Min 200 Typ 250 Max V/µs Unit Symbol Parameter dVcom/dt rate of change of commutating voltage - 20 - - 20 - 10 20 - V/µs tgt gatecontrolled turn-on time - 2 - - 2 - - 2 - µs 1.6 VGT VGT(25°C) 1.2 001aab101 3 IGT IGT(25°C) 2 (1) (2) (3) (4) 001aae042 0.8 1 (3) (4) (2) (1) 0.4 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+G− (3) T2+ G+ (4) T2−G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 7 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 25 IT (A) 20 003aab311 3 IL IL(25°C) 2 001aab100 15 10 1 5 (1) (2) (3) 0 0 1 2 VT (V) 3 0 −50 0 50 100 Tj (°C) 150 Vo = 1.26 V Rs = 0.0378 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage 3 IH IH(25°C) 2 001aab099 Fig 10. Normalized latching current as a function of junction temperature 103 dV/dt (V/µs) 102 001aae043 (1) (2) (3) 1 10 dlcom/dt (A/ms) = 10 0 −50 1 0 50 100 Tj (°C) 150 0 7.9 50 6.1 4.7 3.6 100 2.8 Tj (°C) 150 The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. (1) Off-state dV/dt limit for BT236X-600G_800G (2) Off-state dV/dt limit for BT236X-600_800 (3) Off-state dV/dt limit for BT236X-600F Fig 11. Normalized holding current as a function of junction temperature Fig 12. Typical commutation dV/dt as a function of junction temperature BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 8 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 9. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A E P q D1 T mounting base A A1 D j L2 b1 L b2 L1 K Q 1 2 b e e1 3 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 1.7 K 0.6 0.4 L L1 L2 max. 3 (1) P 3.2 3.0 Q 2.6 2.3 q 3.0 2.6 T (2) w 0.4 14.4 3.30 13.5 2.79 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 13. Package outline SOT186A (3-lead TO-220F) BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 9 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 10. Revision history Table 8: Revision history Release date Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID Modifications: BT236X_SER_F_G_2 20060314 • In Figure 7, Figure 8, Figure 10 and Figure 11: spaces have been removed between 25 and degree signs. • In Figure 5: the figure note has been deleted. • Figure 8: has been modified. • In Table 3: corrected the symbol dIT/dt. • The entry in IMPULSE has been modified by PD Coding (updated to SOT186A for all types). BT236X_SER_F_G_1 20060209 Product data sheet - BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 10 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 11 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 March 2006 Document number: BT236X_SER_F_G_2 Published in The Netherlands