BTA204S-600E,118

DP AK BTA204S-600E 3Q Hi-Com Triac 12 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits • • • • • • • • 3Q technology for improved noise immunity Direct triggering from low power drivers and logic ICs High blocking voltage capability High commutation capability with sensitive gate Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Surface-mountable package Triggering in three quadrants only 3. Applications • • • AC solenoids General purpose motor control circuits Home appliances 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 25 A IT(RMS) RMS on-state current - - 4 A - - 10 mA full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; - - 10 mA - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 sym051 T1 G 2 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number BTA204S-600E BTA204S-600E Product data sheet Package Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Min Max Unit - 600 V - 4 A - 25 A - 27 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I2t for fusing tp = 10 ms; SIN - 3.1 A s dIT/dt rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C 2 over any 20 ms period 003aag083 12 003aad615 5 I T(RMS ) (A) 10 2 IT(RMS) (A) 4 107 °C 8 3 6 2 4 1 2 0 10-2 10-1 0 -50 1 10 s urge duration (s) f = 50 Hz; Tmb = 107 °C Fig. 1. Fig. 2. RMS on-state current as a function of surge duration; maximum values BTA204S-600E Product data sheet 50 100 Tmb (°C) 150 RMS on-state current as a function of mounting base temperature; maximum values All information provided in this document is subject to legal disclaimers. 12 August 2014 0 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 003aag081 8 Ptot (W) 6 conduction angle (degrees) form factor α 30 60 90 120 180 4 2.8 2.2 1.9 1.57 101 Tmb(max) 104 (°C) α = 180 ° α 107 120 ° 110 90 ° 60 ° 4 113 30 ° 116 2 119 122 0 0 1 2 3 4 5 IT(RMS) (A) 125 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aag085 103 ITSM IT I TS M (A) t tp Tj(init) = 25 °C max 102 (1) 10 10-5 10-4 10-3 10-2 t p (s) 10-1 tp ≤ 20 ms; (1) dIT/dt limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 003aag086 30 ITSM (A) 20 ITSM IT 10 t 1/f 0 Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 3 K/W half cycle; Fig. 6 - - 3.7 K/W thermal resistance from junction to ambient printed circuit board (FR4) mounted - 75 - K/W Rth(j-a) 003aag087 10 (1) Zth(j-mb) (K/W) (2) 1 10-1 10-2 10-5 P tp 10-4 10-3 10-2 10-1 1 tp (s) t 10 (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - - 10 mA - - 10 mA - - 10 mA - - 12 mA - - 18 mA - - 12 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 12 mA VT on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V 0.25 0.4 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; (VDM = 67% 30 - - V/µs 2.1 - - A/ms 8 - - A/ms Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 10 V/µs; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 0.1 V/µs; gate open circuit BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 003aad600 3 003aad604 3 IGT IL IGT(25°C) IL(25°C) (1) 2 2 (2) (3) 1 1 0 -50 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ Fig. 7. Fig. 8. 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aad606 3 003aad611 12 IH (1) (2) IT (A) IH(25°C) 2 8 1 4 0 -50 Fig. 9. 0 0 50 100 Tj (°C) 0 150 0 1 (3) 2 VT (V) 3 Vo = 1.27 V; Rs = 0.091 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 003aad596 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 10. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 see Note 1 E1 mounting base D2 D1 HD 2 L2 L 1 L1 3 b1 b w c A e e1 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit A A1 b max 2.38 0.93 0.89 nom min 2.22 0.46 0.71 mm b1 b2 c D1 1.1 5.46 0.56 6.22 0.9 5.00 0.20 5.98 D2 E E1 6.73 4.0 6.47 4.45 e e1 2.285 4.57 HD L L1 10.4 2.95 9.6 2.55 L2 0.9 0.5 0.5 w 0.2 Note 1. Plastic body may have 45° chamfer. Outline version SOT428 0.2 sot428_po References IEC y JEDEC JEITA TO-252 SC-63 European projection Issue date 06-03-16 14-06-10 Fig. 12. Package outline DPAK (SOT428) BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac 11. Soldering Footprint information for reflow soldering of DPAK (SOT428) package SOT428 7 6.15 5.9 5.8 1.8 1 4.725 4.6 5.75 5.65 6.5 1.15 3.6 6 2.45 6 6.125 0.3 2.4 2.3 1.3 1.5 1.4 1.65 4.57 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 14-03-12 14-03-17 sot428_fr Fig. 13. Reflow soldering footprint for DPAK (SOT428) BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 14 BTA204S-600E NXP Semiconductors 3Q Hi-Com Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 7 10 Package outline ................................................... 10 11 Soldering .............................................................. 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 August 2014 BTA204S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 14