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BTA208S-600B

BTA208S-600B

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    BTA208S-600B - Three-quadrant triacs high commutation - NXP Semiconductors

  • 数据手册
  • 价格&库存
BTA208S-600B 数据手册
BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation Rev. 02 — 31 May 2005 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a plastic envelope, suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features s High maximum junction temperature s High commutation capability s Surface mounting package s Low thermal resistance 1.3 Quick reference data s VDRM ≤ 600 V (BTA208S-600B) s VDRM ≤ 800 V (BTA208S-800B) s IT(RMS) ≤ 8 A s ITSM ≤ 65 A 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base [1] Simplified outline mb Symbol T2 sym051 T1 G 2 1 3 SOT428 (DPAK) [1] Connected to main terminal 2 (T2). Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 3. Ordering information Table 2: Ordering information Package Name BTA208S-600B BTA208S-800B TO-252 Description Version plastic single-ended surface mounted package (DPAK); SOT428 3 leads (one lead cropped) Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage BTA208S-600B BTA208S-800B IT(RMS) ITSM RMS on-state current non-repetitive peak on-state current full sine wave; Tmb ≤ 102 °C; see Figure 4 and 5 full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj [1] [1] Conditions Min - Max 600 800 8 Unit V V A - 65 71 21 100 2 5 5 0.5 +150 125 A A A2s A/µs A V W W °C °C I2t for fusing t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs rate of rise of on-state current peak gate current peak gate voltage peak gate power average gate power storage temperature junction temperature over any 20 ms period −40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 2 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 12 Ptot (W) 8 α α 001aac659 α = 180 120 90 60 30 101 Tmb(max) (˚C) 105 109 113 4 117 121 0 0 2 4 6 8 IT(RMS) (A) 10 125 α = conduction angle Fig 1. On-state power dissipation as a function of RMS on-state current; maximum values 70 ITSM (A) 50 40 30 20 10 0 1 10 IT 001aac667 ITSM tp t Tj(init) = 25 °C max 102 number of half cycles 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of number of half cycles; sinusoidal currents; maximum values 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 3 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 103 IT ITSM (A) dlT/dt limit 001aac663 ITSM t T Tj(init) = 25 °C max 102 10 10−2 10−1 1 10 tp (ms) 102 tp ≤ 20 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width; sinusoidal currents; maximum values 001aac665 25 IT(RMS) (A) 20 10 IT(RMS) (A) 8 001aac661 102 °C 15 6 10 4 5 2 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb ≤ 102 °C Fig 4. RMS on-state current as a function of surge duration; sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 4 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 5. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions full cycle; see Figure 6 half cycle; see Figure 6 printed-circuit board (FR4) mounted; footprint as in Figure 14 Min Typ 75 Max 2.0 2.4 Unit K/W K/W K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient Symbol Parameter 10 Zth(j−mb) (K/W) 1 001aac673 unidirectional bidirectional 10−1 PD 10−2 10−5 tp t 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 5 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 6. Static characteristics Table 5: Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT gate trigger current Conditions VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G− T2− G− IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G− T2− G− IH VT VGT ID [1] [1] Min 2 2 2 0.25 - Typ 18 21 34 31 34 30 31 1.3 0.7 0.4 0.1 Max 50 50 50 60 90 60 60 1.65 1.5 0.5 Unit mA mA mA mA mA mA mA V V V mA holding current on-state voltage gate trigger voltage off-state current VD = 12 V; IGT = 0.1 A; see Figure 11 IT = 10 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 125 °C VD = VDRM(max); Tj = 125 °C Device does not trigger in the T2− G+ quadrant. 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 6 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6: Dynamic characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter dVD/dt dIcom/dt rate of rise of off-state voltage rate of rise of commutating current gate-controlled turn-on time Conditions VDM = 0.67VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 °C; IT(RMS) = 8 A; without snubber; gate open circuit; see Figure 12 ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs Min 1000 Typ 4000 14 Max Unit V/µs A/ms tgt - 2 - µs 1.6 VGT (Tj) VGT (25°C) 1.2 001aac334 3 (1) 001aac669 IGT (Tj) IGT (25°C) 2 (2) (3) 0.8 1 0.4 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 7 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 25 IT (A) 20 001aac670 (1) (2) (3) 3 IL(Tj) IL(25°C) 2 001aac336 15 10 1 5 0 0 1 2 VT (V) 3 0 −50 0 50 100 Tj (°C) 150 VO = 1.264 V; RS = 37.8 mΩ (1) Tj = 125 °C; typical values (2) Tj = 25 °C; maximum values (3) Tj = 125 °C; maximum values Fig 9. On-state characteristic Fig 10. Normalized latching current as a function of junction temperature 001aac337 3 IH(Tj) IH(25°C) 2 103 dlcom/dt (A/ms) 102 001aac675 1 10 0 −50 1 0 50 100 Tj (°C) 150 20 60 100 Tj (°C) 140 Fig 11. Normalized holding current as a function of junction temperature Fig 12. Rate of rise of commutating current as a function of junction temperature; typical values 8. Package information Plastic meets UL94 V-0 at 1⁄8 inch. 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 8 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 9. Package outline Plastic single-ended surface mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E b2 A A1 A E1 mounting base D1 HD D2 2 L2 1 3 L L1 b1 e e1 b w M A c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.73 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 05-02-09 05-02-11 Fig 13. Package outline SOT428 (TO-252) 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 9 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 10. Mounting 7.00 6.15 5.90 5.80 1.80 1.00 4.60 5.75 5.65 4.725 6.50 1.15 3.60 2.45 6.00 6.00 6.125 2.40 2.30 0.30 solder lands solder resist occupied area solder paste 1.50 1.30 1.40 1.65 4.57 SOT428 Dimensions in mm Fig 14. SOT428: minimum pad sizes for surface mounting 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 10 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 11. Revision history Table 7: Revision history Release date 20050531 Data sheet status Product data sheet Change notice Doc. number 9397 750 14861 Supersedes BTA208S_SERIES_B_1 Document ID BTA208S_SER_B_2 Modifications: • • • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. 500 V types removed. Alternative pinning types removed. Product specification - BTA208S_SERIES_B_1 19970901 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 11 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 12 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 May 2005 Document number: 9397 750 14861 Published in The Netherlands
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