BTA208X-1000C

BTA208X-1000C High commutation three-quadrant triacs Rev. 02 — 4 September 2009 Product data sheet 1. Product profile 1.1 General description Passivated high voltage, high commutation triac in a full pack, plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 1.2 Features and benefits 3Q technology with superior commutation performance for improved noise immunity High false trigger immunity Isolated package Very high blocking voltage capability of 1000 V 1.3 Applications General purpose motor control Reversible induction motor control 1.4 Quick reference data Table 1. VDRM ITSM Quick reference Conditions Min full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4 and 5 full sine wave; Th ≤ 73 °C; see Figure 3, 1 and 2 VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2G-; Tj = 25 °C; see Figure 7 Typ Max 1000 65 Unit V A repetitive peak off-state voltage non-repetitive peak on-state current RMS on-state current gate trigger current Symbol Parameter IT(RMS) - - 8 A Static characteristics IGT 2 2 2 6 13 23 35 35 35 mA mA mA NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol T1 T2 G n.c. Description main terminal 1 main terminal 2 gate mounting base; isolated mb T2 sym051 Simplified outline Graphic symbol T1 G 123 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Package Name BTA208X-1000C TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A Type number 4. Limiting values Table 4. Symbol VDRM IT(RMS) ITSM Limiting values Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current I2t for fusing rate of rise of on-state current peak gate current peak gate power average gate power storage temperature junction temperature full sine wave; Th ≤ 73 °C; see Figure 3, 1 and 2 full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4 and 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t dIT/dt IGM PGM PG(AV) Tstg Tj tp = 10 ms; sine-wave pulse IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs Conditions Min -40 Max 1000 8 65 71 21 100 2 5 0.5 150 125 Unit V A A A A2s A/µs A W W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 2 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 25 IT(RMS) (A) 20 003aaa970 10 IT(RMS) (A) 8 73 °C 003aaa969 15 6 10 4 5 2 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 Th (°C) 150 Fig 2. Fig 1. RMS on-state current as a function of surge duration; maximum values RMS on-state current as a function of heatsink temperature; maximum values 12 Ptot (W) 10 003aaa967 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 α = 180° 120° α 90° 60° 30° 71 Th(max) (°C) 80 8 89 6 98 4 107 2 116 0 0 2 4 6 8 IT(RMS) (A) 125 10 Fig 3. Total power dissipation as a function of RMS on-state current; maximum values BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 3 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 80 ITSM (A) 60 003aaa968 40 IT 20 ITSM t T Tj(init) = 25 °C max 0 1 10 102 number of cycles 103 Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aab121 103 IT ITSM (A) (1) 102 ITSM t tp Tj(init) = 25 °C max 10 10−2 10−1 1 10 tp (ms) 102 Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 4 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 5. Thermal characteristics Table 5. Symbol Rth(j-h) Thermal characteristics Parameter Conditions Min Typ 55 Max 4.5 6.5 Unit K/W K/W K/W thermal resistance from full cycle or half cycle with heatsink junction to heatsink compound; see Figure 6 full cycle or half cycle without heatsink compound; see Figure 6 Rth(j-a) thermal resistance from junction to ambient 10 Zth(j-h) (K/W) 1 (1) (2) 003aaa972 (3) (4) 10−1 P tp t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Symbol Visol(RMS) Isolation characteristics Parameter RMS isolation voltage Conditions from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C Min Typ Max 2500 Unit V Cisol isolation capacitance - 10 - pF BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 5 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 7. Characteristics Table 7. Symbol IGT Characteristics Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 IH VT VGT holding current on-state voltage gate trigger voltage VD = 12 V; Tj = 25 °C; see Figure 9 IT = 10 A; Tj = 25 °C; see Figure 10 VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C ID dVD/dt dIcom/dt off-state current rate of rise of off-state voltage rate of change of commutating current gate-controlled turn-on time VD = 1000 V; Tj = 125 °C VDM = 670 V; Tj = 125 °C; exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; gate open circuit; see Figure 12 ITM = 12 A; VD = 1000 V; IG = 0.1 A; dIG/dt = 5 A/µs Dynamic characteristics 1000 12 4000 32 V/µs A/ms Min 2 2 2 0.25 Typ 6 13 23 25 48 30 20 1.3 0.7 0.4 0.1 Max 35 35 35 50 75 50 50 1.65 1.5 0.5 Unit mA mA mA mA mA mA mA V V V mA Static characteristics tgt - 2 - µs BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 6 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 3 (1) 003aac888 3 IL IL(25°C) 2 001aab100 IGT IGT(25°C) 2 (2) (3) 1 1 0 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 8. Fig 7. Normalized gate trigger current as a function of junction temperature 3 IH IH(25°C) 2 001aab099 Normalized latching current as a function of junction temperature 25 IT (A) 20 003aaa971 15 10 1 5 (1) (2) (3) 0 −50 0 0 50 100 Tj (°C) 150 0 1 2 VT (V) 3 Fig 9. Normalized holding current as a function of junction temperature Fig 10. On-state current as a function of on-state voltage BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 7 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 1.6 VGT VGT(25°C) 1.2 001aab101 103 dIcom/dt (A/ms) 102 typ min 003aaa973 0.8 10 0.4 −50 1 0 50 100 Tj (°C) 150 20 60 100 Tj (°C) 140 Fig 11. Normalized gate trigger voltage as a function of junction temperature Fig 12. Rate of change of commutating current as a function of junction temperature; typical and minimum values BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 8 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E P q D1 T mounting base A A1 D j L2 b1 L b2 L1 K Q 1 2 b e e1 3 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 1.7 K 0.6 0.4 L L1 L2 max. 3 (1) P 3.2 3.0 Q 2.6 2.3 q 3.0 2.6 T (2) w 0.4 14.4 3.30 13.5 2.79 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 13. Package outline SOT186A (TO-220F) BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 9 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 9. Revision history Table 8. Revision history Release date 20090904 Data sheet status Product data sheet Change notice Supersedes BTA208X-1000C_1 Document ID BTA208X-1000C_2 Modifications: • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet - BTA208X-1000C_1 20051004 BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 10 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 10. Legal information 10.1 Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BTA208X-1000C_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 4 September 2009 11 of 12 NXP Semiconductors BTA208X-1000C High commutation three-quadrant triacs 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 September 2009 Document identifier: BTA208X-1000C_2