BTA216-600BT

BTA216-600BT Triacs high commutation Rev. 01 — 25 August 2005 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a plastic envelope. Featuring high maximum junction temperature and high commutation capability. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features s High maximum junction temperature s High commutation capability 1.3 Quick reference data s VDRM ≤ 600 V s IGT ≤ 50 mA s Tj ≤ 150 °C s IT(RMS) ≤ 16 A s ITSM ≤ 140 A s dIcom/dt = 18 A/ms 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base [1] Simplified outline mb Symbol T2 sym051 T1 G 123 SOT78 (TO-220AB) [1] Connected to main terminal 2 (T2) Philips Semiconductors BTA216-600BT Triacs high commutation 3. Ordering information Table 2: Ordering information Package Name BTA216-600BT TO-220AB Description plastic single-ended package; heatsink mounted; 3 leads; 1 mounting hole Version SOT78 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM IT(RMS) ITSM repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current full sine wave; Tmb ≤ 124 °C; see Figure 4 and 5 full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj [1] Conditions [1] Min - Max 600 16 Unit V A - 140 150 98 100 2 5 5 0.5 +150 150 A A A2s A/µs A V W W °C °C I2t for fusing rate of rise of on-state current peak gate current peak gate voltage peak gate power average gate power storage temperature junction temperature t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs over any 20 ms period −40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 2 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 25 Ptot (W) 20 α α 003aab068 120 Tmb(max) (°C) 126 α = 180° 120° 90° 60° 30° 15 132 10 138 5 144 0 0 4 8 12 16 IT(RMS) (A) 150 20 α = conduction angle Fig 1. On-state power dissipation as a function of RMS on-state current; maximum values 150 ITSM (A) 100 003aab070 50 0 1 10 102 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of number of half cycles; sinusoidal currents; maximum values BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 3 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 103 ITSM (A) 003aab069 (1) 102 IT ITSM t T Tj(init) = 25 °C max 10 10−5 10−4 10−3 10−2 tp (s) 10−1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; sinusoidal currents; maximum values 50 IT(RMS) (A) 40 003aab072 20 IT(RMS) (A) 15 003aab071 124 °C 30 10 20 5 10 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb ≤ 131 °C Fig 4. RMS on-state current as a function of surge duration; sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 4 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 5. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions full cycle; see Figure 6 half cycle; see Figure 6 in free air Min Typ 60 Max 1.2 1.7 Unit K/W K/W K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient Symbol Parameter 10 Zth(j-mb) (K/W) 1 003aab078 (1) 10−1 (2) PD 10−2 tp t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 (1) half cycle (2) full cycle Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 5 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 6. Static characteristics Table 5: Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT gate trigger current Conditions VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G− T2− G− IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G− T2− G− IH VT VGT ID [1] [1] Min 2 2 2 0.25 - Typ 18 21 34 31 34 30 31 1.2 0.7 0.4 0.5 Max 50 50 50 60 90 60 60 1.5 1.5 3 Unit mA mA mA mA mA mA mA V V V mA holding current on-state voltage gate trigger voltage off-state current VD = 12 V; IGT = 0.1 A; see Figure 11 IT = 20 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 150 °C VD = VDRM(max); Tj = 150 °C Device does not trigger in the T2− G+ quadrant. BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 6 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 7. Dynamic characteristics Table 6: Dynamic characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter dVD/dt dIcom/dt rate of rise of off-state voltage rate of change of commutating current gate-controlled turn-on time Conditions VDM = 0.67VDRM(max); Tj = 150 °C; exponential waveform; gate open circuit VDM = 400 V; Tj = 150 °C; IT(RMS) = 16 A; without snubber; gate open circuit; see Figure 12 ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs Min 500 9 Typ 1500 18 Max Unit V/µs A/ms tgt - 2 - µs 1.6 VGT (Tj) VGT (25°C) 1.2 001aab073 3 IGT (Tj) IGT (25°C) 2 003aab074 (1) (2) (3) 0.8 1 0.4 −50 0 50 100 Tj (°C) 150 0 -50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 7 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 50 IT (A) 40 (1) (2) 003aab077 3 IL(Tj) IL(25°C) 2 003aab075 (3) 30 20 1 10 0 0 0.5 1 1.5 2 VT (V) 2.5 0 −50 0 50 100 Tj (°C) 150 VO = 1.195 V; RS = 18 mΩ (1) Tj = 150 °C; typical values (2) Tj = 25 °C; maximum values (3) Tj = 150 °C; maximum values Fig 9. On-state characteristic Fig 10. Normalized latching current as a function of junction temperature 003aab076 3 IH(Tj) IH(25°C) 2 103 dICOMM/dt (A/ms) 102 003aab079 1 10 0 −50 1 0 50 100 Tj (°C) 150 20 60 100 140 Tj (°C) 180 Fig 11. Normalized holding current as a function of junction temperature Fig 12. Rate of change of commutating current as a function of junction temperature; typical values 8. Package information Plastic meets UL94 V-0 at 1⁄8 inch. BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 8 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1 1.45 1.00 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1 3.30 2.79 L2 max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 05-01-31 05-03-22 Fig 13. Package outline SOT78 (TO-220AB) BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 9 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 10. Revision history Table 7: Revision history Release date 20050825 Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID BTA216-600BT_1 BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 10 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com BTA216-600BT_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 25 August 2005 11 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 August 2005 Document number: BTA216-600BT_1 Published in The Netherlands