BUJ303AX_11

TO -2 20F BUJ303AX NPN power transistor Rev. 05 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A (TO220F) "full pack" plastic package. 1.2 Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses 1.3 Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 1.4 Quick reference data Table 1. Symbol IC Ptot VCESM Quick reference data Parameter collector current total power dissipation collector-emitter peak voltage DC current gain Conditions see Figure 1; see Figure 2; see Figure 4 Th ≤ 25 °C; see Figure 3 VBE = 0 V Min Typ Max 5 32 Unit A W 1000 V Static characteristics hFE IC = 5 mA; VCE = 5 V; Th = 25 °C; see Figure 11 IC = 500 mA; VCE = 5 V; Th = 25 °C; see Figure 11 Dynamic characteristics tf fall time IC = 2.5 A; IBon = 0.5 A; see Figure 14; see Figure 15; VBB = -5 V; LB = 1 µH; Th = 25 °C 145 160 ns 10 14 22 25 35 35 NXP Semiconductors BUJ303AX NPN power transistor 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description B C E n.c. base collector emitter mounting base; isolated E sym123 Simplified outline mb Graphic symbol C B 123 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Package Name BUJ303AX TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A Type number 4. Limiting values Table 4. Symbol VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Th ≤ 25 °C; see Figure 3 DC Conditions VBE = 0 V IB = 0 A see Figure 1; see Figure 2; see Figure 4 Min -65 Max 1000 500 5 10 2 4 32 150 150 Unit V V A A A A W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 2 of 14 NXP Semiconductors BUJ303AX NPN power transistor VCC LC 12 VCL(CE) probe point IC (A) 8 001aab999 003aag028 IBon VBB LB DUT 4 0 0 400 800 1200 VCEclamp (V) Fig 1. Test circuit for reverse bias safe operating area 120 Pder (%) 80 Fig 2. Reverse bias safe operating area 03aa13 40 0 0 50 100 150 Th (°C) 200 Fig 3. Normalized total power dissipation as a function of heatsink temperature BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 3 of 14 NXP Semiconductors BUJ303AX NPN power transistor 102 IC (A) 10 ICMmax ICmax 1 (2) 003aag029 duty cycle = 0.01 II(3) (1) tp = 10 μs 100 μs 1 ms 10 ms DC III(3) 10-1 I(3) 10-2 1 10 102 VCEclamp (V) 103 (1) Ptot maximum and Ptot peak maximum lines. (2) Second breakdown limits. (3) I = Region of permissible DC operation. II = Extension for repetitive pulse operation. III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs. Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 4 of 14 NXP Semiconductors BUJ303AX NPN power transistor 5. Thermal characteristics Table 5. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to heatsink thermal resistance from junction to ambient Conditions with heatsink compound ; see Figure 5 in free air Min Typ 55 Max 3.95 Unit K/W K/W 10 Zth(j-h) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 003aag067 10-1 Ptot δ= tp T 10-2 0 tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) 102 Fig 5. Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 6. Symbol Visol(RMS) Isolation characteristics Parameter RMS isolation voltage Conditions 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C; from all terminals to external heatsink; clean and dust free from collector to external heatsink ; f = 1 MHz; Th = 25 °C Min Typ Max 2500 Unit V Cisol isolation capacitance - 10 - pF BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 5 of 14 NXP Semiconductors BUJ303AX NPN power transistor 7. Characteristics Table 7. Symbol ICES ICBO ICEO IEBO VCEOsus VCEsat VBEsat hFE Characteristics Parameter collector-emitter cut-off current Conditions VBE = 0 V; VCE = 1000 V; Th = 25 °C VBE = 0 V; VCE = 1000 V; Tj = 125 °C VCE = 500 V; IB = 0 A; Th = 25 °C VEB = 9 V; IC = 0 A; Th = 25 °C IB = 0 A; IC = 10 mA; LC = 25 mH; Th = 25 °C; see Figure 6; see Figure 7 IC = 3 A; IB = 0.6 A; Th = 25 °C; see Figure 8; see Figure 9 IC = 3 A; IB = 0.6 A; Th = 25 °C; see Figure 10 IC = 5 mA; VCE = 5 V; Th = 25 °C; see Figure 11 IC = 500 mA; VCE = 5 V; Th = 25 °C; see Figure 11 hFEsat DC saturation current gain IC = 2.5 A; VCE = 5 V; Th = 25 °C; see Figure 11 IC = 3 A; VCE = 5 V; Th = 25 °C; see Figure 11 Dynamic characteristics ton ts turn-on time storage time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; VBB = -4 V; Th = 25 °C; resistive load; see Figure 12; see Figure 13 IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Th = 25 °C; inductive load; see Figure 14; see Figure 15 IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 tf fall time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; VBB = -4 V; Th = 25 °C; resistive load; see Figure 12; see Figure 13 IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Th = 25 °C; see Figure 14; see Figure 15 IC = 2.5 A; IBon = 0.5 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 [1] Measured with half-sine wave voltage (curve tracer). [1] [1] [1] [1] Min 500 10 14 10 - Typ 0.25 0.97 22 25 13.5 12 Max 1 2 1 0.1 0.1 1.5 1.3 35 35 17 - Unit mA mA mA mA mA V V V Static characteristics collector-base cut-off current VCB = 1000 V; IE = 0 A; Th = 25 °C collector-emitter cut-off current emitter-base cut-off current collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage DC current gain - 0.5 3.3 0.7 4 µs µs - 1.4 1.6 µs - 1.7 1.9 µs - 0.33 0.45 µs - 145 160 ns - 160 200 ns BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 6 of 14 NXP Semiconductors BUJ303AX NPN power transistor 50 V 100 Ω to 200 Ω horizontal oscilloscope vertical 6V 300 Ω 30 Hz to 60 Hz 001aab987 IC (mA) 250 1Ω 100 10 0 min VCE (V) VCEOsus 001aab988 Fig 6. Test circuit for collector-emitter sustaining voltage 2.0 003aag031 Fig 7. Oscilloscope display for collector-emitter sustaining voltage test waveform 003aag032 VCEsat (V) 1.6 IC = 1 A 2A 3A 4A 0.5 VCEsat (V) 0.4 1.2 0.3 0.8 0.2 0.4 0.1 0 10-2 10-1 1 IB (A) 10 0 10-1 1 IC (A) 10 Fig 8. Collector-emitter saturation voltage as a function of base current; typical values Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 7 of 14 NXP Semiconductors BUJ303AX NPN power transistor 1.4 VBEsat (V) 1.2 1.0 0.8 003aag033 102 003aag034 hFE VCE = 5 V 10 0.6 0.4 0.2 0 10-1 1 10-2 1V 1 IC (A) 10 10-1 1 IC (A) 10 Fig 10. Base-emitter saturation voltage as a function of collector current; typical values VCC Fig 11. DC current gain as a function of collector current; typical values IC 90 % ICon 90 % RL VIM 0 tp T 001aab989 RB DUT 10 % t tf IB ton ts toff IBon 10 % t tr ≤ 30 ns −IBoff 001aab990 Fig 12. Test circuit for resistive load switching Fig 13. Switching times waveforms for resistive load BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 8 of 14 NXP Semiconductors BUJ303AX NPN power transistor VCC IC ICon 90 % LC LB DUT IBon VBB 001aab991 10 % tf IB ts toff IBon t t −IBoff 001aab992 Fig 14. Test circuit for inductive load switching Fig 15. Switching times waveforms for inductive load BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 9 of 14 NXP Semiconductors BUJ303AX NPN power transistor 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E P q D1 T mounting base A A1 D j L2 b1 L b2 L1 K Q 1 2 b e e1 3 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 1.7 K 0.6 0.4 L L1 L2 max. 3 (1) P 3.2 3.0 Q 2.6 2.3 q 3.0 2.6 T (2) w 0.4 14.4 3.30 13.5 2.79 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 16. Package outline SOT186A (TO-220F) BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 10 of 14 NXP Semiconductors BUJ303AX NPN power transistor 9. Revision history Table 8. Revision history Release date 20110503 Data sheet status Product data sheet Product data sheet Change notice Supersedes BUJ303AX v.4 BUJ303AX v.3 Document ID BUJ303AX v.5 Modifications: BUJ303AX v.4 • Various changes to content. 20110415 BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 11 of 14 NXP Semiconductors BUJ303AX NPN power transistor 10. Legal information 10.1 Data sheet status Document status [1] [2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 10.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 12 of 14 NXP Semiconductors BUJ303AX NPN power transistor In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 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Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUJ303AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 13 of 14 NXP Semiconductors BUJ303AX NPN power transistor 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 May 2011 Document identifier: BUJ303AX