BUK127-50DL

Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. BUK127-50DL QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance MAX. 50 0.7 1.8 150 200 UNIT V A W ˚C mΩ APPLICATIONS General purpose switch for driving lamps motors solenoids heaters in automotive systems and other applications. FEATURES TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT RIG POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT223 PIN 1 2 3 4 input drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL D TOPFET I P 1 2 3 S October 2001 1 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ID II IIRM PD Tstg Tj PARAMETER Continuous drain source voltage Continuous drain current2 Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature 1 BUK127-50DL CONDITIONS clamping tp ≤ 1 ms Ta = 25˚C normal operation3 MIN. -55 - MAX. 50 self limiting 3 10 1.8 150 150 UNIT V A mA mA W ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 2 UNIT kV OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL EDSM EDRM PARAMETER Non-repetitive clamping energy Repetitive clamping energy CONDITIONS Ta ≤ 25˚C; IDM < ID(lim); inductive load Tsp ≤ 125˚C; IDM = 50 mA; f = 250 Hz MIN. MAX. 100 5 UNIT mJ mJ OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads. Overload protection operates by means of drain current limiting and activating the overtemperature protection. SYMBOL VDDP PARAMETER REQUIRED CONDITION MIN. MAX. 35 UNIT V Protected drain source supply voltage VIS ≥ 4 V THERMAL CHARACTERISTICS SYMBOL Rth j-sp Rth j-b Rth j-a PARAMETER Thermal resistance Junction to solder point Junction to board4 Junction to ambient CONDITIONS MIN. TYP. 12 40 MAX. 18 70 UNIT K/W K/W K/W Mounted on any PCB Mounted on PCB of fig. 22 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Not in an overload condition with drain current limiting. 4 Temperature measured 1.3 mm from tab. October 2001 2 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET OUTPUT CHARACTERISTICS Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Off-state V(CL)DSS IDSS Drain-source clamping voltage CONDITIONS VIS = 0 V ID = 10 mA ID = 200 mA; tp ≤ 300 µs; δ ≤ 0.01 Drain source leakage current On-state RDS(ON) Drain-source resistance VDS = 40 V Tmb = 25 ˚C VIS ≥ 4 V; tp ≤ 300 µs; δ ≤ 0.01 ID = 100 mA Tmb = 25 ˚C 50 50 MIN. BUK127-50DL TYP. MAX. UNIT 60 0.1 70 100 10 V V µA µA mΩ mΩ 150 380 200 INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input. Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified SYMBOL VIS(TO) IIS IISL VISR tlr V(CL)IS RIG PARAMETER Input threshold voltage Input supply current Input supply current Protection reset voltage1 Latch reset time Input clamping voltage Input series resistance2 to gate of power MOSFET CONDITIONS VDS = 5 V; ID = 1 mA Tmb = 25˚C normal operation; protection latched; reset time tr ≥ 100 µs VIS1 = 5 V, VIS2 < 1 V II = 1.5 mA Tmb = 25˚C VIS = 5 V VIS = 4 V VIS = 5 V VIS = 3 V MIN. 0.6 1.1 100 80 200 130 1.5 10 5.5 TYP. 1.6 220 195 400 250 2 40 33 MAX. 2.4 2.1 400 330 650 430 2.9 100 8.5 UNIT V V µA µA µA µA V µs V kΩ 1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals. October 2001 3 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET OVERLOAD PROTECTION CHARACTERISTICS TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the input. SYMBOL ID PARAMETER Overload protection Drain current limiting CONDITIONS -40˚C ≤ Tj ≤ 150˚C VIS = 5 V VIS = 4.5 V VIS = 4 V to 5.5 V VIS = 5 V for protection to operate which determines trip time1 from ID ≥ 280 mA or VDS ≥ 100 mV 150 0.8 0.7 0.6 MIN. BUK127-50DL TYP. 1.3 - MAX. 1.7 1.8 UNIT A A A Short circuit load protection PD(TO) TDSC Tj(TO) Overload power threshold Characteristic time Overtemperature protection 17 1.6 165 - W ms ˚C Threshold junction temperature VIS = 4 V to 5.5 V SWITCHING CHARACTERISTICS Ta = 25˚C; resistive load RL = 50 Ω; adjust VDD to obtain ID = 250 mA; refer to test circuit and waveforms SYMBOL td on tr td off tf PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time VIS: 5 V ⇒ 0 V CONDITIONS VIS: 0 V ⇒ 5 V MIN. TYP. 5 11 25 14 MAX. 12 30 65 35 UNIT µs µs µs µs REVERSE DIODE LIMITING VALUE SYMBOL IS PARAMETER Continuous forward current CONDITIONS Tmb ≤ 25 ˚C; VIS = 0 V MIN. MAX. 2 UNIT A REVERSE DIODE CHARACTERISTICS Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified SYMBOL VSDO trr PARAMETER Forward voltage Reverse recovery time CONDITIONS IS = 2 A; VIS = 0 V; tp = 300 µs not applicable2 MIN. TYP. 0.83 MAX. 1.1 UNIT V - 1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / [ PD / PD(TO) - 1 ]. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. October 2001 4 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK127-50DL 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 2 a Normalised RDS(ON) = f(Tj) 1.5 1 0.5 0 20 40 60 80 100 Tmb / C 120 140 0 -50 0 50 Tj / C 100 150 Fig.2. Normalised limiting power dissipation. PD% = 100⋅PD/PD(25˚C) = f(Tmb) ID / A BUK127-50DL CURRENT LIMITING OCCURS WITHIN SHADED REGION Fig.5. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25˚C = f(Tj); ID = 100 mA; VIS = 4.4 V 2.0 350 300 RDS(ON) / mOhm BUK127-50DL 1.5 TYP. 250 200 MAX. 1.0 150 0.5 TYP. 100 50 0 0 20 40 60 80 Tamb / C 100 120 140 0 0 1 2 3 4 VIS / V 5 6 7 8 Fig.3. Continuous drain current. ID = f(Tamb); condition: VIS = 5 V ID / A BUK127-50DL Fig.6. Typical on-state resistance, Tj = 25˚C. RDS(ON) = f(VIS); conditions: ID = 100 mA, tp = 300 µs 2 2 ID / A BUK127-50DL 1.5 VIS / V = 7 6 5 4 1.5 1 1 0.5 0.5 0 0 4 8 12 16 VDS / V 20 24 28 32 0 0 1 2 3 VIS / V 4 5 6 7 Fig.4. Typical on-state characteristics, Tj = 25˚C. ID = f(VDS); parameter VIS; tp = 300 µs Fig.7. Typical transfer characteristics, Tj = 25˚C. ID = f(VIS); conditions: VDS = 10 V, tp = 300 µs October 2001 5 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK127-50DL 200 195 190 185 180 175 170 165 160 Tj(TO) / C BUK127-50DL 4 VIS(TO) / V BUK127-50DL DATA BELOW 4V IS FOR INFORMATION ONLY. ALL SPEC. VALUES ARE FOR NORMAL OPERATION AT 4V AND ABOVE. 3 MAX. 2 TYP. 1 MIN. 2 3 4 5 VIS / V 6 7 8 0 -50 0 50 Tj / C 100 150 Fig.8. Typical overtemperature protection threshold. Tj(TO) = f(VIS) Ii / mA Fig.11. Input threshold voltage. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V II / mA BUK127-50DL 1 10 9 8 7 6 0.5 Iisl 5 4 3 Iis 0 2 1 0 1 2 3 4 Vis / V 5 6 7 8 0 0 2 4 VIS / V 6 8 10 Fig.9. Typical DC input characteristics, Tj = 25˚C. IIS & IISL = f(VIS); normal operation & protection latched IIS & IISL / uA BUK127-50DL Fig.12. Typical input clamping characteristic. II = f(VIS); normal operation, Tj = 25˚C. 1s / tdsc BUK127-50DL 500 1600 1400 1200 1000 5V 400 VIS / V = 300 3V 200 = IIS = IISL 0 -50 0 50 Tj / C 100 150 5V 4V 800 600 400 200 0 0 5 10 15 20 25 Pd / W 30 35 40 45 50 100 Fig.10. Typical DC input currents. IIS & IISL = f(Tj); parameter VIS; normal & latched Fig.13. Typical overload protection response time. 1 / tdsc = f(PD); VIS ≥ 4 V, Tj ≤ 125˚C. October 2001 6 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK127-50DL 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 VISR / V BUK127-50DL 15 VIS & VDS / V BUK127-50DL VDS 10 VIS 5 1 -50 0 -25 0 25 50 Tj / C 75 100 125 150 -40 -20 0 20 40 60 80 time / us 100 120 140 160 Fig.14. Typical Protection reset voltage. VISR = f(Tj); tlr = 100 µs. ID / mA BUK127-50DL Fig.17. Typical switching waveforms, resistive load . RL = 50 Ω; adjust VDD to obtain ID = 250 mA; Tj = 25˚C IDSS BUK127-50DL 400 10 uA 300 1 uA 200 TYP. 100 nA 100 0 56 58 60 62 VDS / V 64 66 68 10 nA -50 0 50 Tj / C 100 150 Fig.15. Overvoltage clamping characteristic, 25˚C. ID = f(VDS); conditions: VIS = 0 V; tp ≤ 300 µs Fig.18. Typical drain source leakage current IDSS = f(Tj); conditions: VDS = 40 V; VIS = 0 V. VDD RL VDS TOPFET I P D measure D.U.T. S 0V VIS Fig.16. Test circuit for resistive load switching times. VIS = 5 V October 2001 7 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK127-50DL 1E+02 Zth j-amb / (K / W) D= 0.5 0.2 0.1 0.05 0.02 BUK127-50DL 1E+01 1 P D 1E-01 0 1E-02 1E-07 1E-05 1E-03 t/s 1E-01 tp D= tp T t 1E+03 T 1E+01 Fig.19. Transient thermal impedance, mounted on SOT223 PCB. Zth j-a = f(t); parameter D = tp / T October 2001 8 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET MECHANICAL DATA Plastic surface mounted package; collector pad for good heat transfer; 4 leads BUK127-50DL SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig.20. SOT223 surface mounting package3. 3 For further information, refer to surface mounting instructions for SOT223 envelope. Epoxy meets UL94 V0 at 1/8". Net Mass: 0.11 g October 2001 9 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET MOUNTING INSTRUCTIONS Dimensions in mm. 3.8 min BUK127-50DL PRINTED CIRCUIT BOARD Dimensions in mm. 36 1.5 min 18 60 9 2.3 1.5 min (3x) 6.3 4.6 4.5 10 1.5 min 4.6 7 15 50 Fig.21. Soldering pattern for surface mounting. Fig.22. PCB for thermal resistance and power rating. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). October 2001 10 Rev 1.011 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK127-50DL DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS4 Objective data PRODUCT STATUS5 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 4 Please consult the most recently issued datasheet before initiating or completing a design. 5 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 2001 11 Rev 1.011