BUK212-50Y

BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Rev. 01 — 17 March 2003 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package. Product availability: BUK212-50Y in SOT263B-01 BUK217-50Y in SOT426 (D2-PAK). 1.2 Features s s s s s s s Very low quiescent current Power TrenchMOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection s s s s s s s CMOS logic capability Negative load clamping Overload protection ESD protection for all pins Diagnostic status indication Operating voltage down to 5.5 V Current limitation. 1.3 Applications s 12 V and 24 V grounded loads s Inductive loads s High inrush current loads s Replacement for relays and fuses. 1.4 Quick reference data Table 1: Symbol RBLon IL IL(nom) IL(lim) VBG(oper) Quick reference data Parameter battery-load on-state resistance load current nominal load current (ISO) self-limiting load current battery-ground operating voltage Min 25 47 5.5 Max 14 44 100 35 Unit mΩ A A A V Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 2. Pinning information mb mb B S 12345 I P L 1 MBL431 5 03pa56 MBL264 G Fig 1. Pinning; SOT426 (D2-PAK). Fig 2. Pinning; SOT263B-01. Fig 3. Symbol; (HSS) TOPFETTM. 2.1 Pin description Table 2: Symbol G I B S L [1] [2] Pin description Pin 1 2 3 4 5 mb I/O I O O [2] [1] [2] Description circuit common ground input battery status load mounting base It is not possible to make a connection to pin 3 of the SOT426 package. The battery is connected to the mounting base. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 2 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 3. Block diagram battery 3/mb 4 status VOLTAGE REGULATOR CHARGE PUMP POWER MOSFET SHORT CIRCUIT PROTECTION OVERVOLTAGE PROTECTION input CONTROL LOGIC UNDERVOLTAGE PROTECTION LOW CURRENT DETECT TEMPERATURE SENSOR CURRENT LIMIT 2 load 5 03pa33 RG 1 ground Fig 4. Elements of the high-side TOPFET switch. 4. Functional description Table 3: Truth table Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present; UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1]. Input L H H H H H H [1] Supply UV X 0 0 1 0 0 0 OV X 0 0 0 1 0 0 LC X 0 1 X X 0 0 Load SC X 0 0 X 0 1 0 OT X 0 0 X 0 X 1 Load output OFF ON ON OFF OFF OFF OFF Status H H L H H L L Operating mode off on & normal on & low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold. See “Overtemperature protection” characteristics in Table 6. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 3 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VBG IL Ptot Tstg Tj Tmb VBGR VBGRR Parameter battery-ground supply voltage load current total power dissipation storage temperature junction temperature mounting base temperature reverse battery-ground supply voltage repetitive reverse battery-ground supply voltage input resistor status resistor input current repetitive peak input current status current repetitive peak status current non-repetitive battery-load clamping energy electrostatic discharge voltage δ ≤ 0.1; tp = 300 µs Tj = 150 °C prior to turn-off; IL = 20 A δ ≤ 0.1; tp = 300 µs [2] [3] Conditions Tmb ≤ 90 °C Tmb ≤ 25 °C Min −55 - Max 50 44 115 +175 +150 260 16 32 Unit V A W °C °C °C V V during soldering (≤ 10 s) [1] - Reverse battery voltage External resistor RI RS II IIRM IS ISRM EBL(CL)S 3.3 3.3 −5 −50 −5 −50 +5 +50 +5 +50 460 kΩ kΩ mA mA mA mA mJ Input current Status current Inductive load clamping Electrostatic discharge Vesd Human body model; C = 100 pF; R = 1.5 kΩ 2 kV [1] [2] [3] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse current. The internal ground resistor limits the reverse battery ground current. To limit input current during reverse battery and transient overvoltages. To limit status current during reverse battery and transient overvoltages. 6. Thermal characteristics Table 5: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to mounted on printed circuit board; ambient minimum footprint; SOT426 Conditions Min Typ 0.86 50 Max 1.08 Unit K/W K/W 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 4 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 7. Static characteristics Table 6: Static characteristics Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol VBG(CL) VBL(CL) VLG(CL) Parameter battery-ground clamping voltage battery-load clamping voltage load-ground clamping voltage Conditions IG = 1 mA; Figure 6 IL = IG = 1 mA IL = 10 mA; Figure 12 and 14 IL = 20 A; tp = 300 µs Supply voltage VBG(oper) Current IB battery quiescent current VLG = 0 V; Figure 10 Tmb = 150 °C Tmb = 25 °C IL(off) off-state load current VBL = VBG Tmb = 150 °C Tmb = 25 °C IG(on) IL(nom) RBLon operating current nominal load current (ISO) battery-load on-state resistance Figure 6 VBL = 0.5 V; Tmb = 85 °C 9 V ≤ VBG ≤ 35 V; IL = 20 A; Figure 5 Tmb = 25 °C Tmb = 150 °C VBG = 6 V; IL = 20 A Tmb = 25 °C Tmb = 150 °C RG Input [6] II VIG(CL) VIG(on) VIG(off) VIG(on)(hys) II(on) II(off) IL(LC) IL(LC)(hys) input current input-ground clamping voltage input-ground turn-on voltage input-ground turn-off voltage input-ground turn-on hysteresis input turn-on current input turn-off current [7][10] [3] [2] [1] Min 50 50 −18 −20 5.5 Typ 55 55 −23 −25 - Max 65 65 −28 −30 35 Unit V V V V V Clamping voltage battery-ground operating voltage 25 0.1 0.1 2 - 20 2 20 1 4 - µA µA µA µA mA A Resistance [4] [5] 10 13 150 90 7 2.4 2.1 0.3 1.8 0.44 14 25 18 33 190 160 8.5 3 100 4.4 2.9 - mΩ mΩ mΩ mΩ Ω µA V V V V µA µA A A A ground resistance IG = 10 mA VIG = 5 V II = 200 µA Figure 9 95 20 5.5 1.5 - VIG = 3 V VIG = 1.5 V −40 °C ≤ Tmb ≤ +150 °C Tmb = 25 °C; Figure 15 10 0.55 0.65 - Low current detection load low current detect load low current detect hysteresis 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 5 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Table 6: Static characteristics…continued Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol VBG(uv) Parameter battery-ground undervoltage Conditions [8] Min 2 - Typ 4.2 0.5 Max 5.5 - Unit V V Undervoltage [10] VBG(uv)(hys) battery-ground undervoltage hysteresis Overvoltage [10] VBG(ov) battery-ground overvoltage [9] 35 - 45 1 50 - V V VBG(ov)(hys) battery-ground overvoltage hysteresis Overload protection [10] IL(lim) VBL(off) self-limiting load current battery-load turn-off voltage VBG ≥ 9 V; VBL = VBG; Figure 8 VBG = 16 V; Figure 11 VBG = 35 V Overtemperature protection [10][11] Tj(th) Tj(th)(hys) Status [6][10] VSG(CL) VSG(L) status-ground clamping voltage status-ground low voltage IS = 100 µA IS = 100 µA; Figure 7 Tmb = −40 °C Tmb = 25 °C IS(off) status leakage current VSG = 5 V Tmb = 150 °C Tmb = 25 °C RS [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [11] [10][11] [12] 47 8 15 74 10 20 170 10 100 12 25 190 - A V V °C °C Short circuit load protection threshold junction temperature threshold junction temperature hysteresis [13] 150 - 5.5 [14] 7 0.7 0.1 47 8.5 1 0.8 15 1 - V V V µA µA kΩ status resistor connected externally; VSG = 5 V - For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This is the current drawn from the supply when the input is LOW, and includes leakage current to the load. Defined as in ISO 10483-1. For comparison purposes only. The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the applied load current. RG is a resistor incorporated internally in the package. 9 V ≤ VBG ≤ 16 V 9 V ≤ VBG ≤ 35 V. A low current load can be detected in the on-state. Undervoltage sensor causes the device to switch off and reset. Overvoltage sensor causes the device to switch off to protect the load. See Table 3 “Truth table” 5.5 V ≤ VBG ≤ 35 V The battery-to-load threshold voltage for short circuit is approximately proportional to the battery supply voltage. After cooling below the reset temperature the switch will resume normal operation. The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 6 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 25 RBLon (mΩ) 20 Tj = 150 °C 03pa65 15 Tj = 25 °C 10 Tj = -40 °C 5 0 0 8 16 24 32 VBG (V) 40 IL = 20 A; VIG = 5 V Fig 5. Battery-load on-state resistance as a function of battery-ground supply voltage; typical values. 4 IG (mA) 03pa55 clamping 3 undervoltage shutdown Tj = −40 °C 2 Tj = 25 °C overvoltage shutdown Tj = 150 °C 1 0 0 25 50 VBG (V) 75 VIG = 5 V Fig 6. Supply current characteristics: operating current as a function of battery-ground supply voltage; typical values. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 7 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 4 03pa38 80 IL (A) 60 03pa63 IS (mA) 3 VBL(off) 2 40 1 20 0 0 1 2 3 4 0 VSG (V) 0 4 8 VBL (V) 12 VBG = 13 V; VIG = 5 V; Tj = 25 °C VBG = 16 V; VIG = 5 V; Tmb = 25 °C (the device trips after 200 µs (typical), and status goes LOW). Fig 7. Status current as a function of status-ground voltage; typical values. Fig 8. Load current limiting as a function of battery-load voltage; typical values. 3.5 03pa36 8 IB (µ A) 6 03pa64 VIG (V) 3 max 2.5 VIG (on) 2 4 VIG (off) 1.5 2 min 1 -50 0 50 100 150 200 Tj (°C) 0 -50 0 50 100 150 200 Tj (°C) 9 V ≤ VBG ≤ 16 V VBG = 16 V Fig 9. Input-ground voltage as a function of junction temperature. Fig 10. Battery quiescent current as a function of junction temperature; typical values. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 8 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 30 VBL(off) (V) 03pa40 max typ 20 min 10 0 0 10 20 30 50 40 VBG (V) VIG = 5 V; −40 °C ≤ Tmb ≤ +150 °C Fig 11. Battery-load turn-off voltage as a function of battery-ground voltage. 8. Dynamic characteristics Table 7: Switching characteristics Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω. Figure 13 Symbol td(on) dV/dton ton td(off) dV/dtoff toff Parameter turn-on delay time rising slew rate turn-on switching time turn-off delay time falling slew rate turn-off switching time Conditions to 10% VL 30 to 70% VL to 90% VL to 90% VL 70 to 30% VL to 10% VL Min Typ 40 0.5 180 75 0.5 105 Max 90 1.0 310 120 1.0 160 Unit µs V/µs µs µs V/µs µs Turn-on measured from the input going HIGH Turn-off measured from the input going LOW Table 8: Status response times Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol td(sc) td(lc) Parameter short circuit response time low current detect response time Conditions VBL > VBL(off); Figure 16 IL < IL(LC); Figure 15 Min Typ 180 200 Max 250 Unit µs µs Measured from when the input goes HIGH 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 9 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Table 9: Capacitances Tmb = 25 °C; f = 1 MHz; VIG = 0 V. Symbol Cig Cbl Csg Parameter input-ground capacitance battery-load output capacitance status-ground capacitance Conditions VBG = 13 V VBL = 13 V VSG = 5 V Min Typ 15 635 11 Max 20 900 15 Unit pF pF pF ton toff 90% VL dV/dton dV/dtoff 10% 0V RS 5V VBG RI P VL VIG RL VIG LL VSG VSG 0V 5V 0 03pa51 03pa45 VBG = 13 V; VIG = 5 V and Tmb = 25 °C Fig 12. Schematic drawing of the switching circuit. Fig 13. Resistive switching waveforms and definitions. VL 0V ton toff IL(LC) IL EBL(CL)S VL 90% 0A 5V VSG VSG 0V 5V 10% td(lc) 0.7 V 0V 5V VIG VIG 0.7 V 0V 5V 0 03pa50 0 03pa48 Fig 14. Switching a large inductive load. 9397 750 10768 Fig 15. Low current detection waveforms. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 10 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ td(sc) IL 0A 5V VSG 0.7 V 0V 5V VIG 0 03pa49 VBL ≥ VBL(off) Fig 16. Short circuit protection waveforms. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 11 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 9. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426 A E A1 D1 mounting base D HD 3 1 Lp 2 4 5 b c Q e e e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT426 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to Data Handbook SC18. Fig 17. SOT426 (D2-PAK). 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 12 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 ∅p A A1 q D1 D mounting base L3 R L m L4 L1 1 e b 5 wM L2 R Q Q1 Q2 c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 b c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 9.8 9.7 L1 5.9 5.3 L2 5.2 5.0 L3(1) 2.4 1.6 L4(2) max. 0.5 m 0.8 0.6 ∅p 3.8 3.6 p1 4.3 4.1 q 3.0 2.7 Q 2.0 Q1 4.5 Q2 8.2 R 0.5 w 0.4 1.39 0.85 1.27 0.70 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B-01 REFERENCES IEC JEDEC 5-lead (option) TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11 Refer to mounting instructions for TO-220 packages. Epoxy meets UL94 VO at 1/8’’. Net mass: 2g Fig 18. SOT263B-01. 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 13 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 10. Revision history Table 10: Rev Date 01 20030317 Revision history CPCN Description Product data (9397 750 10768). 9397 750 10768 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 14 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 11. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks TOPFET — is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 9397 750 10768 Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 17 March 2003 15 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Contents 1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 March 2003 Document order number: 9397 750 10768