BUK7907-55AIE

BUK7907-55AIE N-channel TrenchPLUS standard level FET Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Electrostatically robust due to integrated protection diodes Low conduction losses due to low on-state resistance Q101 compliant Reduced component count due to integrated current sensor Suitable for standard level gate drive sources 1.3 Applications Electrical Power Assisted Steering (EPAS) Variable Valve Timing for engines 1.4 Quick reference data Table 1. VDS ID Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 2; see Figure 3 VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 Tj > -55 °C; Tj < 175 °C; VGS > 10 V [1] Min Typ Max 55 140 Unit V A drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current Symbol Parameter Static characteristics RDSon drain-source on-state resistance ratio of drain current to sense current 5.8 7 mΩ ID/Isense 450 500 550 [1] Current is limited by power dissipation chip rating. NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 5 mb Pinning information Symbol G ISENSE D KS S D Description gate Sense current drain Kelvin source source mounting base; connected to drain MBL368 Simplified outline mb Graphic symbol d g Isense s Kelvin source 12345 SOT263B (TO-220) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7907-55AIE TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B TO-220 BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 2 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Symbol VDS VGS ID Limiting values Parameter drain-source voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3; Tmb = 100 °C; VGS = 10 V; see Figure 2 IDM Ptot IGS(CL) Tstg Tj VDGS IS ISM EDS(AL)S peak drain current total power dissipation gate-source clamping current storage temperature junction temperature drain-gate voltage source current peak source current IDG = 250 µA Tmb = 25 °C; Tmb = 25 °C; tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness non-repetitive ID = 68 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy electrostatic discharge voltage [1] [2] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C [1] [2] [2] Min -20 -55 -55 [1] [2] Max 55 20 140 75 75 560 272 10 50 175 175 55 140 75 560 460 Unit V V A A A A W mA mA °C °C V A A A mJ Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 1 continuous pulsed; tp = 5 ms; δ = 0.01 Source-drain diode Electrostatic Discharge Vesd HBM; C = 100 pF; R = 1.5 kΩ 6 kV Current is limited by power dissipation chip rating. Continuous current is limited by package. BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 3 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 120 Pder (%) 80 03na19 160 ID (A) 120 03ni63 80 40 40 Capped at 75A due to package 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 200 Tmb (°C) Fig 2. Fig 1. Normalized total power dissipation as a function of mounting base temperature Normalized continuous drain current as a function of mounting base temperature 103 ID (A) 03nf55 Limit RDSon = VDS/ID tp = 10 μs 102 100 μs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 4 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 60 Max 0.55 Unit K/W K/W thermal resistance from vertical in still air junction to ambient thermal resistance from see Figure 4 junction to mounting base 1 Zth(j-mb) (K/W) 10−1 δ = 0.5 0.2 0.1 0.05 0.02 10−2 single shot tp P 03ni29 δ= tp T t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 5 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 °C ID = 0.25 mA; VGS = 0 V; Tj = -55 °C ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9 IDSS V(BR)GSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C VDS = 55 V; VGS = 0 V; Tj = 175 °C gate-source breakdown IG = 1 mA; VDS = 0 V; Tj < 175 °C; voltage Tj > -55 °C IG = -1 mA; VDS = 0 V; Tj < 175 °C; Tj > -55 °C IGSS gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C VDS = 0 V; VGS = -10 V; Tj = 25 °C VDS = 0 V; VGS = 10 V; Tj = 175 °C VDS = 0 V; VGS = -10 V; Tj = 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7; see Figure 8 ID/Isense ratio of drain current to sense current total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance from upper edge of drain mounting base to centre of die; Tj = 25 °C from source lead to source bond pad; Tj = 25 °C VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 12 VGS > 10 V; Tj > -55 °C; Tj < 175 °C Min 55 50 2 1 20 20 450 Typ 3 0.1 22 22 22 22 5.8 500 Max 4 4.4 10 250 1000 1000 10 10 7 14 550 Unit V V V V V µA µA V V nA nA µA µA mΩ mΩ Static characteristics Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD LS ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C; see Figure 14 116 19 50 4500 960 510 36 115 159 111 2.5 7.5 nC nC nC pF pF pF ns ns ns ns nH nH BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 6 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET Table 6. Symbol VSD trr Qr Characteristics …continued Parameter source-drain voltage reverse recovery time recovered charge Conditions IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 16 IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C Min Typ 0.85 80 200 Max 1.2 Unit V ns nC Source-drain diode 8 400 ID (A) 300 20 12 03ni65 03ni66 10 8.5 RDSon (mΩ) 7 8 VGS (V) = 7.5 7 200 6.5 6 6 100 5.5 5 4 4.5 0 0 2 4 6 8 10 VDS (V) 4 5 10 15 VGS (V) 20 Fig 6. Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 7 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 2 12 RDSon (mΩ) 10 03ni67 03ne89 a VGS (V) = 5.5 1.5 6 8 6.5 7 8 10 1 6 4 0.5 2 0 0 20 40 60 80 100 120 ID (A) 0 -60 0 60 120 Tj (°C) 180 Fig 7. Drain-source on-state resistance as a function of drain current; typical values 5 03aa32 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 03aa35 10−1 ID (A) VGS(th) (V) 4 max 10−2 min typ max 3 typ 10−3 2 min 10−4 1 10−5 0 −60 10−6 0 60 120 Tj (°C) 180 0 2 4 VGS (V) 6 Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 8 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 80 gfs (S) 60 03ni68 8000 C (pF) 6000 C iss 03ni69 4000 40 Crss Coss 2000 20 0 10-2 10-1 1 0 0 20 40 60 80 I (A) 100 D 10 V 102 DS (V) Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 120 ID (A) 100 03ni70 10 VGS (V) 8 VDS = 14 V 03nf25 80 6 VDS = 44 V 60 4 40 175 °C 20 2 Tj = 25 °C 0 0 0 2 4 VGS (V) 6 0 40 80 QG (nC) 120 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 9 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 600 ID/Isense 03nj27 100 IS (A) 80 03ni72 550 500 60 40 450 20 175 °C 400 4 8 12 16 VGS (V) 20 0 0.0 0.2 0.4 0.6 Tj = 25 °C 0.8 1.0 VSD (V) Fig 15. Drain-sense current as a function of gate-source voltage; typical values Fig 16. Reverse diode current as a function of reverse diode voltage; typical values BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 10 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 ∅p A A1 q D1 D mounting base L1 Q m L L2 1 e b 5 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.85 0.70 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 15.0 13.5 L1 (1) L2 (2) m 0.8 0.6 ∅p 3.8 3.6 p1 4.3 4.1 q 3.0 2.7 Q 2.6 2.2 w 0.4 2.4 1.6 0.5 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC 5-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11 Fig 17. Package outline SOT263B (TO-220) BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 11 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 8. Revision history Table 7. Revision history Release date 20090209 Data sheet status Product data sheet Change notice Supersedes BUK71_7907_55AIE-01 Document ID BUK7907-55AIE_2 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7907-55AIE separated from data sheet BUK71_7907_55AIE-01. Product data sheet - BUK71_7907_55AIE-01 (9397 750 09877) 20020812 BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 12 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK7907-55AIE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 9 February 2009 13 of 14 NXP Semiconductors BUK7907-55AIE N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 — 9 February 2009 Document identifier: BUK7907-55AIE_2