BUK7L06-34ARC

BUK7L06-34ARC N-channel TrenchPLUS standard level FET Rev. 05 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Reduced component count due to integrated gate resistor 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] [2] Min Typ Max 147 250 Unit A W drain current total power dissipation drain-source on-state resistance Symbol Parameter Static characteristics RDSon VGS = 10 V; ID = 30 A; Tj = 25 °C; see Figure 13; see Figure 14 5.1 6 mΩ [1] [2] Current is limited by power dissipation chip rating. Refer to document 9397 750 12572 for further information. NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain G mb D Simplified outline Graphic symbol S mbl521 123 SOT78C (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7L06-34ARC TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads Version SOT78C BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 2 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 IDM Ptot IDG(CL) IGS(CL) Tstg Tj IS ISM EDS(CL)S peak drain current total power dissipation drain-gate clamping current gate-source clamping current storage temperature junction temperature source current peak source current non-repetitive drain-source clamping energy electrostatic discharge voltage [1] [2] [3] [4] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ [1] [1] [2][3] [4] [4] Min -20 -55 -55 Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 75 A; VDS ≤ 34 V; VGS = 10 V; RGS = 50 Ω; unclamped; Tj(init) = 25 °C [2][3] [4] Avalanche ruggedness 1 J Max 34 34 20 147 75 75 590 250 50 10 50 175 175 147 75 590 Unit V V V A A A A W mA mA mA °C °C A A A Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 pulsed; tp = 5 ms; δ = 0.01 continuous pulsed; tp = 5 ms; δ = 0.01 Source-drain diode Electrostatic discharge Vesd HBM; C = 250 pF; R = 1.5 kΩ HBM; C = 100 pF; R = 1.5 kΩ 8 8 kV kV Voltage is limited by clamping. Current is limited by power dissipation chip rating. Refer to document 9397 750 12572 for further information. Continuous current is limited by package. BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 3 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 150 ID (A) 100 03nj41 120 Pder (%) 80 03na19 (1) 50 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 (1) Capped at 75 A due to package. Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 03nj39 103 ID (A) 102 (1) tp = 10 μ s Limit RDSon = VDS / ID 100 μ s 1 ms DC 10 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 (1) Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 4 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in free air Min Typ 60 0.33 Max 0.6 Unit K/W K/W thermal resistance from see Figure 4 junction to mounting base 1 Zth(j-mb) (K/W) δ = 0.5 0.2 03nj40 10-1 0.1 0.05 0.02 10-2 P δ= tp T Single Shot tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 5 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Symbol V(BR)DG Characteristics Parameter drain-gate (Zener diode) breakdown voltage drain-source clamping voltage gate-source threshold voltage Conditions ID = 2 mA; VGS = 0 V; Tj = 25 °C ID = 2 mA; VGS = 0 V; Tj = -55 °C IGS(CL) = -2 mA; ID = 1 A; Tj = 25 °C; see Figure 10; see Figure 18 ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11; see Figure 12 ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 11; see Figure 12 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11; see Figure 12 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11; see Figure 12 IDSS drain leakage current VDS = 16 V; VGS = 0 V; Tj = 25 °C VDS = 16 V; VGS = 0 V; Tj = 150 °C VDS = 16 V; VGS = 0 V; Tj = 175 °C V(BR)GSS gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C; voltage Tj < 175 °C; see Figure 18; see Figure 19 IG = -1 mA; VDS = 0 V; Tj > -55 °C; Tj < 175 °C; see Figure 18; see Figure 19 IGSS gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C VDS = 0 V; VGS = -10 V; Tj = 25 °C VDS = 0 V; VGS = 10 V; Tj = 175 °C VDS = 0 V; VGS = -10 V; Tj = 175 °C VDS = 0 V; VGS = 16 V; Tj = 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 30 A; Tj = 25 °C; see Figure 13; see Figure 14 VGS = 10 V; ID = 30 A; Tj = 175 °C; see Figure 13; see Figure 14 VGS = 16 V; ID = 30 A; Tj = 25 °C RG internal gate resistance f = 1 MHz (AC) total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 17 ID = 25 A; VDS = 27 V; VGS = 10 V; Tj = 25 °C; see Figure 16 Min 34 34 2.2 1.5 1.2 20 20 Typ 41 3 0.1 5 30 22 22 5 5 5.1 4 11 Max 45 45 3.8 4.2 2 50 250 1000 1000 50 50 150 6 11.4 5.3 Unit V V V V V V V µA µA µA V V nA nA µA µA µA mΩ mΩ mΩ Ω Static characteristics VDS(CL) VGS(th) Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss 82 15 31 3400 1080 660 4533 1296 904 nC nC nC pF pF pF BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 6 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET Table 6. Symbol td(on) tr td(off) tf LD Characteristics …continued Parameter turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die; Tj = 25 °C from contact screw on mounting base to center of die; Tj = 25 °C Conditions VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C Min Typ 27 108 196 167 4.5 3.5 7.5 Max Unit ns ns ns ns nH nH nH LS internal source inductance source-drain voltage reverse recovery time recovered charge from source lead to source bond pad; Tj = 25 °C IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 15 IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C Source-drain diode VSD trr Qr 0.85 62 44 1.2 V ns nC BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 7 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 350 ID 20 (A) 10 300 9 250 200 150 100 50 0 0 2 03nj36 60 gfs (S) 40 03nj33 8 7.5 VGS (V) = 7 6.5 6 5.5 5 4.5 4 20 0 4 6 8 10 VDS (V) 0 20 40 60 ID (A) 80 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03nj34 Fig 6. Forward transconductance as a function of drain current; typical values 03nj57 100 ID (A) 80 42.0 VDSR(CL) (V) 41.5 Tj = 175 °C 60 Tj = 25 °C 40 41.0 20 Tj = -55 °C Tj = 175 °C Tj = 25 °C 40.5 0 0 2 4 VGS (V) 6 0 2 4 6 8 ID (A) 10 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Drain-source clamping voltage as a function of drain current; typical values BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 8 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 14 VGS (V) = 5 RDSon (mΩ) 10 8 6 7 03nj37 43 VDSR(CL) (V) 42 03nj56 Tj = 175 °C Tj = 25 °C Tj = -55 °C 41 10 6 20 40 2 0 100 200 300 ID (A) 400 39 0 1 2 -IGS(CL) (mA) 3 Fig 9. Drain-source on-state resistance as a function of drain current; typical values 5 03nh86 Fig 10. Drain-source clamping voltage as a function of gate-source clamping current; typical values 10-1 ID (A) 10-2 03nh87 VGS(th) (V) 4 max typ 3 min 2 10-4 10-3 min typ max 1 10-5 0 -60 10-6 0 60 120 Tj (°C) 180 0 2 4 VGS (V) 6 Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Sub-threshold drain current as a function of gate-source voltage BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 9 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 2 a 1.5 03aa27 12 RDSon (mΩ) 9 03nj35 1 6 0.5 0 -60 3 0 60 120 Tj (°C) 180 5 10 15 VGS (V) 20 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 100 IS (A) 80 03nj31 Fig 14. Drain-source on-state resistance as a function of gate-source voltage; typical values 10 VGS (V) 8 VDD = 14 V 03nj32 VDD = 27 V 60 6 40 Tj = 175 °C Tj = 25 °C 4 20 2 0 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) 0 20 40 60 80 100 QG (nC) Fig 15. Source current as a function of source-drain voltage; typical values Fig 16. Gate-source voltage as a function of gate charge; typical values BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 10 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 6000 C (pF) 4000 Coss Ciss 03nj38 10-1 IG (A) 10-2 003aab215 10-3 Crss 10-4 2000 0 10-1 1 10 VDS (V) 102 10-5 20 22 24 26 28 30 32 V(BR)GSS (V) Fig 18. Source-gate clamping current as a function of source-gate clamping voltage; typical values Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 1.03 a 1.02 003aab216 1.01 1 0.99 0.98 -100 -50 0 50 100 150 200 Tj (°C) Fig 19. Normalized source-gate clamping voltage as a function of junction temperature; typical values BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 11 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C E p mounting base A A1 q D1 q1 D q2 L1 Q L b1 1 2 3 b c e e1 H 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.58 4.31 A1 1.33 1.21 b 0.87 0.76 b1 1.33 1.21 c 0.44 0.33 D 15.07 14.80 D1 6.47 6.22 E 10.40 10.00 e 2.64 2.44 e1 5.16 5.00 H 6.03 5.76 L 14.00 13.50 L1 6.10 5.58 p 3.90 3.78 Q 2.72 2.40 q 2.95 2.69 q1 3.80 3.42 q2 12.40 12.00 Notes 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78C REFERENCES IEC JEDEC 3-lead TO-220 JEITA EUROPEAN PROJECTION ISSUE DATE 01-12-11 03-01-21 Fig 20. Package outline SOT78C (TO-220) BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 12 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 8. Revision history Table 7. Revision history Release date 20090217 Data sheet status Product data sheet Change notice Supersedes BUK7L06-34ARC_4 Document ID BUK7L06-34ARC_5 Modifications: • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet Product data sheet Product data sheet Product data sheet BUK7L06_34ARC-03 BUK7L06_34ARC-02 BUK7L06_34ARC-01 - BUK7L06-34ARC_4 BUK7L06_34ARC-03 (9397 750 12162) BUK7L06_34ARC-02 (9397 750 11471) BUK7L06_34ARC-01 (9397 750 11177) 20051213 20031203 20030521 20030414 BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 13 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK7L06-34ARC_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 17 February 2009 14 of 15 NXP Semiconductors BUK7L06-34ARC N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 05 — 17 February 2009 Document identifier: BUK7L06-34ARC_5