BUK9E06-55B

BUK9E06-55B N-channel TrenchMOS FET Rev. 04 — 22 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min Typ Max 55 75 258 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 14; see Figure 15 22 nC ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 679 mJ NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET Quick reference Conditions VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Min Typ 4.8 Max 5.4 Unit mΩ Table 1. Symbol Parameter Static characteristics RDSon drain-source on-state resistance - 5.1 6 mΩ [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 123 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK9E06-55B I2PAK Description plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB Version SOT226 Type number BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 2 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 [1] Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 [2] Tmb = 100 °C; VGS = 5 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C; Tmb = 25 °C; tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy 679 mJ [1] [2] Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -15 -55 -55 Max 55 55 15 146 75 75 587 258 175 175 146 75 587 Unit V V V A A A A W °C °C A A A In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode [1] [2] Current is limited by power dissipation chip rating. Continuous current is limited by package. 150 ID (A) 100 03nh85 120 Pder (%) 80 03aa16 Capped at 75 A due to package 50 40 0 0 50 100 150 Tmb ( °C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2009. All rights reserved. BUK9E06-55B_4 Product data sheet Rev. 04 — 22 July 2009 3 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 103 ID (A) 102 Limit RDSon = VDS / ID 03nh83 tp = 1 0 μ s 100 μ s Capped at 75 A due to package DC 1 ms 10 ms 100 ms 10 1 10-1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 4 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 0.58 Unit K/W thermal resistance from see Figure 4 junction to mounting base thermal resistance from vertical in free air junction to ambient Rth(j-a) - 60 - K/W 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 03nh84 0.2 0.1 0.05 0.02 10-2 P δ= tp T single shot 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp T t tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 5 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 55 V; VGS = 0 V; Tj = 25 °C VDS = 55 V; VGS = 0 V; Tj = 175 °C VDS = 0 V; VGS = 15 V; Tj = 25 °C VDS = 0 V; VGS = -15 V; Tj = 25 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 5 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Dynamic characteristics QG(tot) QGS QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die; Tj = 25 °C from upper edge of drain mounting base to center of die; Tj = 25 °C LS internal source inductance from source lead to source bonding pad; Tj = 25 °C VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 14; see Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 16 ID = 25 A; VDS = 44 V; VGS = 5 V; Tj = 25 °C; see Figure 14; see Figure 15 60 11 22 2.4 5674 755 255 37 95 117 106 4.5 2.5 7.5 7565 906 350 nC nC nC V pF pF pF ns ns ns ns nH nH nH Min 50 55 1.1 0.5 Typ 1.5 0.02 2 2 4.8 5.1 Max 2.3 2 1 500 100 100 6.4 5.4 12 6 Unit V V V V V µA µA nA nA mΩ mΩ mΩ mΩ Static characteristics BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 6 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET Table 6. Symbol VSD trr Qr Characteristics …continued Parameter source-drain voltage reverse recovery time recovered charge Conditions IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V; Tj = 25 °C Min Typ 0.85 64 79 Max 1.2 Unit V ns nC Source-drain diode 350 ID 10 (A) 300 6 5 250 200 150 100 50 03nj65 4.2 4 3.8 3.6 3.4 VGS (V) is 14 RDSon (mΩ) 12 03nj66 3 3.2 3.4 VGS (V) is 4 10 8 3.2 3 2.8 2.6 2.4 0 0 2 4 6 8 VDS (V) 10 6 5 10 4 2 0 100 200 300 I (A) 400 D Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03nj62 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03nj63 200 gfs (S) 150 100 ID (A) 75 100 50 50 25 Tj = 175 °C Tj = 25 °C 0 0 20 40 60 I D (A) 80 0 0 1 2 VGS (V) 3 Fig 7. Forward transconductance as a function of drain current; typical values Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 7 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 2.5 VGS(th) (V) 2.0 max 03ng52 10−1 ID (A) 10−2 min typ max 03ng53 1.5 typ 10−3 1.0 min 10−4 0.5 10−5 0 −60 10−6 0 60 120 Tj (°C) 180 0 1 2 VGS (V) 3 Fig 9. Gate-source threshold voltage as a function of junction temperature 7 03nj64 Fig 10. Sub-threshold drain current as a function of gate-source voltage 2 a 1.5 03ne89 RDSon (mΩ) 6 1 5 0.5 4 3 7 11 VGS (V) 15 0 -60 0 60 120 Tj (°C) 180 Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 8 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 100 IS (A) 75 03nj60 5 VGS (V) 4 VDD = 14 V 3 03nj61 VDD = 44 V 50 2 Tj = 175 °C 25 1 Tj = 25 °C 0 0.0 0 0.2 0.4 0.6 0.8 1.0 VSD (V) 0 20 40 QG (nC) 60 Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Gate-source voltage as a function of gate charge; typical values 8000 03nj67 VDS ID VGS(pl) VGS(th) VGS QGS1 QGS2 QGD QG(tot) 003aaa508 C (pF) 6000 Ciss 4000 Coss QGS 2000 Crss Fig 15. Gate charge waveform definitions 0 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 9 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 7. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 A D1 E A1 mounting base D L1 Q b1 L 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.40 1.27 b 0.85 0.60 b1 1.3 1.0 c 0.7 0.4 D max 11 D1 1.6 1.2 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 Q 2.6 2.2 OUTLINE VERSION SOT226 REFERENCES IEC JEDEC low-profile 3-lead TO-220AB JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-23 06-02-14 Fig 17. Package outline SOT226 (I2PAK) BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 10 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 8. Revision history Table 7. Revision history Release date 20090722 Data sheet status Product data sheet Product data sheet Change notice Supersedes BUK9E06-55B_1 BUK95_96_9E06_55B_3 Document ID BUK9E06-55B_4 Modifications: BUK9E06-55B_1 Modifications: • • • • Various changes to content. The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK9E06-55B separated from data sheet BUK95_96_9E06_55B_3. Product data sheet Product data sheet Product data sheet BUK95_96_9E06_55B-02 BUK95_96_9E06_55B-01 - 20090715 BUK95_96_9E06_55B_3 (9397 750 13519) 20041130 BUK95_96_9E06_55B-02 20021010 (9397 750 10474) BUK95_96_9E06_55B-01 20020813 (9397 750 09946) BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 11 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK9E06-55B_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 22 July 2009 12 of 13 NXP Semiconductors BUK9E06-55B N-channel TrenchMOS FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 July 2009 Document identifier: BUK9E06-55B_4