BYV32E-150

BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Soft recovery characteristic minimizes power consuming oscillations Very low on-state loss 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. VRRM IO(AV) Quick reference Conditions Min square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 tp = 2 µs; δ = 0.001 HBM; C = 250 pF; R = 1.5 kΩ; all pins IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 IR = 0.5 A; IF = 1 A; Tj = 25 °C; step recovery; measured at reverse current = 0.25 A; see Figure 6 Static characteristics VF forward voltage IF = 8 A; Tj = 150 °C; see Figure 4 0.72 0.85 V Typ Max 150 20 Unit V A repetitive peak reverse voltage average output current Symbol Parameter IRRM VESD repetitive peak reverse current electrostatic discharge voltage reverse recovery time - - 0.2 8 A kV Dynamic characteristics trr 20 25 ns - 10 20 ns NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol A1 K A2 K Description anode 1 cathode anode 2 mounting base; cathode mb A1 K sym125 Simplified outline Graphic symbol A2 123 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV32E-150 TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB BYV32E-150_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 March 2009 2 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 4. Limiting values Table 4. Symbol VRRM VRWM VR IO(AV) IFRM IFSM Limiting values Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average output current repetitive peak forward current non-repetitive peak forward current DC square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode tp = 8.3 s; sine-wave pulse; Tj(init) = 25 °C; per diode IRRM IRSM Tstg Tj VESD repetitive peak reverse current non-repetitive peak reverse current storage temperature junction temperature electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins δ = 0.001; tp = 2 µs tp = 100 µs Conditions Min -40 Max 150 150 150 20 20 125 137 0.2 0.2 150 150 8 Unit V V V A A A A A A °C °C kV In accordance with the Absolute Maximum Rating System (IEC 60134). 12 Ptot (W) 1.9 2.2 a = 1.57 003aac978 15 Ptot (W) 0.5 003aac979 δ=1 8 4.0 2.8 10 0.2 0.1 4 5 0 0 4 8 IF(AV) (A) 12 0 0 5 10 IF(AV) (A) 15 Fig 1. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; square waveform; maximum values BYV32E-150_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 March 2009 3 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 60 Max 1.6 2.4 Unit K/W K/W K/W thermal resistance from with heatsink compound; both diodes junction to mounting conducting base with heatsink compound; per diode; see Figure 3 thermal resistance from junction to ambient Rth(j-a) 10 Zth(j-mb) (K/W) 1 003aac980 10−1 P δ= tp T 10−2 tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width 6. Characteristics Table 6. Symbol VF IR Characteristics Parameter forward voltage reverse current Conditions IF = 8 A; Tj = 150 °C; see Figure 4 IF = 20 A; Tj = 25 °C VR = 150 V; Tj = 100 °C VR = 150 V; Tj = 25 °C Dynamic characteristics Qr trr recovered charge reverse recovery time IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs; Tj = 25 °C IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; ramp recovery; Tj = 25 °C; see Figure 5 IF = 1 A; IR = 0.5 A; step recovery; measured at reverse current = 0.25 A; Tj = 25 °C; see Figure 6 VFR forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs; see Figure 7 8 20 10 12.5 25 20 nC ns ns Min Typ 0.72 1 0.2 6 Max 0.85 1.15 0.6 30 Unit V V mA µA Static characteristics - - 1 V BYV32E-150_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 March 2009 4 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 32 IF (A) 24 003aac981 IF dlF dt trr 16 (1) (2) (3) time 25 % Qr 100 % 8 IR 0 0 0.4 0.8 1.2 VF (V) 1.6 IRM 003aac562 Fig 5. Reverse recovery definitions; ramp recovery Fig 4. Forward current as a function of forward voltage IF IF IF trr time 0.25 x IR Qr VF time VFRM IR IR 003aac563 VF time Fig 6. Reverse recovery definitions; step recovery Fig 7. Forward recovery definitions 001aab912 BYV32E-150_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 March 2009 5 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 8. Package outline SOT78 (TO-220AB) © NXP B.V. 2009. All rights reserved. BYV32E-150_4 Product data sheet Rev. 04 — 2 March 2009 6 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 8. Revision history Table 7. Revision history Release date 20090302 Data sheet status Product data sheet Change notice Supersedes BYV32E_SERIES_3 Document ID BYV32E-150_4 Modifications: • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline updated. Type number BYV32E-150 separated from data sheet BYV32E_SERIES_3 Product specification Product specification Product specification BYV32E_SERIES_2 BYV32EB_SERIES_1 - BYV32E_SERIES_3 BYV32E_SERIES_2 BYV32EB_SERIES_1 20010301 19980701 19960801 BYV32E-150_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 March 2009 7 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BYV32E-150_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 March 2009 8 of 9 NXP Semiconductors BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Contact information. . . . . . . . . . . . . . . . . . . . . . .8 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 March 2009 Document identifier: BYV32E-150_4