Freescale Semiconductor
Technical Data
Document Number: MDE6IC7120N
Rev. 0, 10/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MDE6IC7120N/GN wideband integrated circuit is designed with
on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
• Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz
35.0
42.0
6.2
- 39.0
748 MHz
34.4
40.6
6.8
- 41.3
768 MHz
33.8
39.1
6.9
- 37.3
MDE6IC7120NR1
MDE6IC7120GNR1
728 - 768 MHz, 25 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1866 - 02
TO - 270 WBL - 16
PLASTIC
MDE6IC7120NR1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 104 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to
120 Watts CW Pout
• Typical Pout @ 1 dB Compression Point ] 120 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VGS1A
CARRIER (2)
RFinA
RFout1/VDS2A
VGS2A
Quiescent Current
Temperature Compensation (1)
VDS1A
VDS1B
VGS2B
PEAKING (2)
RFinB
RFout2/VDS2B
VGS1A
GND
RFinA
GND
NC
VGS2A
VDS1A
VDS1B
VGS2B
NC
GND
RFinB
GND
VGS1B
CASE 1867 - 02
TO - 270 WBL - 16 GULL
PLASTIC
MDE6IC7120GNR1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
RFout1/VDS2A
RFout2/VDS2B
(Top View)
VGS1B
Quiescent Current
Temperature Compensation (1)
Figure 1. Functional Block Diagram
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MDE6IC7120NR1 MDE6IC7120GNR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +66
Vdc
Gate- Source Voltage
VGS
- 0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
30
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Final Doherty Application
RθJC
Thermal Resistance, Junction to Case
Case Temperature 81°C, Pout = 28 W CW
Stage 1A, 27 Vdc, IDQ1A = 60 mA
Stage 1B, 27 Vdc, IDQ1B = 60 mA
Stage 2A, 27 Vdc, IDQ2A = 550 mA
Stage 2B, 27 Vdc, VG2B = 2.3 Vdc
°C/W
4.7
3.7
0.90
0.76
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MDE6IC7120NR1 MDE6IC7120GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1
1.7
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1A = IDQ1B = 80 mA)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, Measured in Functional Test)
VGG(Q)
8
11
14
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 160 μAdc)
VGS(th)
1
1.7
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2A = 550 mA)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2A = 550 mA, Measured in Functional Test)
VGG(Q)
6.6
8.8
11.1
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 407 mA)
VDS(on)
0.2
0.3
0.8
Vdc
Characteristic
Stage 1 — Off Characteristics (1)
Stage 1 — On Characteristics (1)
Stage 2 — Off Characteristics (1)
Stage 2 — On Characteristics (1)
Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B =
2.3 Vdc, Pout = 25 W Avg., f = 748 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
32.0
34.4
37.0
dB
Power Added Efficiency
PAE
38.0
40.6
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
6.2
6.8
—
dB
ACPR
—
- 41.3
- 38.0
dBc
Adjacent Channel Power Ratio
(3)
Typical Broadband Performance
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A =
550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg., Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
1.
2.
3.
4.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz
35.0
42.0
6.2
- 39.0
748 MHz
34.4
40.6
6.8
- 41.3
768 MHz
33.8
39.1
6.9
- 37.3
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA,
VG2B = 2.3 Vdc, 728 - 768 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
IMD Symmetry @ 90 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
—
120
—
W
MHz
—
3
—
VBWres
—
65
—
MHz
ΔIQT
—
—
0.012
0.031
—
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 25 W Avg.
GF
—
1.2
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.034
—
dB/°C
ΔP1dB
—
0.005
—
dBm/°C
Quiescent Current Accuracy over Temperature (2)
with 4.3 kΩ Gate Feed Resistors ( - 30 to 85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Stage 1
Stage 2
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MDE6IC7120NR1 MDE6IC7120GNR1
4
RF Device Data
Freescale Semiconductor
R3
VG1
MDE6IC7120N
Rev 5
C3
VD2
C17
C19
C13
VG2
C11
C6
C7
Coupler 1
C12
R1
C10 C8
R6
VD1
C1
VG3
C2
R4 VG1
C27
C23
CUT OUT AREA
R5
C9 C5
VD1
C4
C21
C25
C26
C22
C24
C28
C14
C18
VD2
C20
Note: Component numbers C15, C16 and R2 are not used.
Figure 3. MDE6IC7120NR1(GNR1) Test Circuit Component Layout
Table 6. MDE6IC7120NR1(GNR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C5, C6, C7, C8
0.01 μF, 50 V Chip Capacitors
GCM2195C1H103JA16D
Murata
C3, C4, C9, C10, C11, C12
1.0 μF, 35 V Chip Capacitors
GRM32RR71H105KA01K
Murata
C13, C14, C27, C28
68 pF Chip Capacitors
ATC600F680JT250XT
ATC
C17, C18
10 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C19, C20
220 μF, 50 V Electrolytic Capacitors
EMVY500ADA221MJA0G
Nippon Chemi - Con
C21, C22
18 pF Chip Capacitors
ATC600F180GT250XT
ATC
C23, C24
1.0 pF Chip Capacitors
ATC600F1R0JT250XT
ATC
C25, C26
8.2 pF Chip Capacitors
ATC600F8R2JT250XT
ATC
Coupler 1
50 Ω, 3 dB Hybrid Coupler
GSC268- HYB0750
Soshin
R1
50 Ω, 10 W Termination
RFP - 060120A15Z50- 2
Anaren
R3, R4, R5, R6
4.3 KΩ, 1/4 W Chip Resistors
CRCW12064K30FKEA
Vishay
PCB
0.020″, εr = 3.50
RO4350B
Rogers
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
5
Single−ended
l
4
l
4
l
2
Quadrature combined
l
4
Doherty
l
2
Push−pull
Figure 4. Possible Circuit Topologies
MDE6IC7120NR1 MDE6IC7120GNR1
6
RF Device Data
Freescale Semiconductor
50
PAE
40
VDD = 28 Vdc, Pout = 25 W (Avg.)
IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA
VG2B = 2.3 Vdc
Gps
35
30
34 Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
33
20
−30
PARC
−35
32
ACPR
31
710
720
730
740
750
760
770
780
0
ACPR (dBc)
Gps, POWER GAIN (dB)
36
−40
790
−1
−2
PARC (dB)
37
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 25 Watts Avg.
−10
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ1A = IDQ1B = 80 mA
IDQ2A = 550 mA, VG2B = 2.3 Vdc, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
−50
IM7−U
IM7−L
−60
10
1
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
40
35
30
25
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
45
50
0
ACPR
−1 dB = 28.1 W
−1
40
−2 dB = 44.1 W
−2
30
−3 dB = 61.1 W
Gps
−3
−4
−5
15
20
PARC
VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA
IDQ2A = 550 mA, VG2B = 2.3 Vdc, f = 748 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
30
45
60
75
−20
60
PAE
10
0
−25
−30
−35
ACPR (dBc)
1
PAE, POWER ADDED EFFICIENCY (%)
50
−40
−45
−50
90
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
768 MHz
PAE
Gps
35
Gps, POWER GAIN (dB)
748 MHz
50
VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA
34 IDQ2A = 550 mA, VG2B = 2.3 Vdc
40
Single−Carrier, W−CDMA
33 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability
32 on CCDF
30
20
768 MHz
31
748 MHz
728 MHz
ACPR
30
1
−20
60
10
−30
−35
−40
−45
−50
0
100
10
−25
ACPR (dBc)
728 MHz
PAE, POWER ADDED EFFICIENCY (%)
36
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier W - CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
5
40
0
35
30
−5
25
−10
20
−15
IRL (dB)
GAIN (dB)
Gain
−20
15
IRL
−25
10
VDD = 28 Vdc, Pin = 0 dBm
IDQ1A = IDQ1B = 80 mA
IDQ2A = 550 mA, VG2B = 2.3 Vdc
5
0
500
700
600
800
900
1000
−30
1100
1200
−35
1300
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W - CDMA TEST SIGNAL
100
10
0
−10
3.84 MHz
Channel BW
−20
1
Input Signal
−30
0.1
(dB)
PROBABILITY (%)
10
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
1
2
3
4
5
6
−40
−50
−60
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−70
−80
7
8
9
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
10
−90
−100
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 11. Single - Carrier W - CDMA Spectrum
MDE6IC7120NR1 MDE6IC7120GNR1
8
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ1A = IDQB = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg.
f
MHz
Zin
W
Zload
W
710
63.51 - j17.96
2.26 + j2.92
720
63.51 - j16.36
2.43 + j3.05
730
63.27 - j14.61
2.61 + j3.17
740
62.90 - j12.86
2.81 + j3.20
750
62.60 - j11.26
3.04 + j3.21
760
62.50 - j9.83
3.33 + j3.13
770
62.73 - j8.61
3.56 + j2.96
780
63.29 - j7.55
3.73 + j2.75
790
64.11 - j6.70
3.86 + j2.53
Note: Measured with Peaking side open.
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
Z
in
load
Figure 12. Series Equivalent Input and Load Impedance — Carrier Side
VDD = 28 Vdc, IDQ1A = IDQB = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg.
f
MHz
Zin
W
Zload
W
710
63.51 - j17.96
1.58 - j0.62
720
63.51 - j16.36
1.35 - j0.33
730
63.27 - j14.61
1.16 - j0.05
740
62.90 - j12.86
0.95 + j0.19
750
62.60 - j11.26
0.79 + j0.44
760
62.50 - j9.83
0.68 + j0.66
770
62.73 - j8.61
0.56 + j0.87
780
63.29 - j7.55
0.38 + j1.15
790
64.11 - j6.70
0.30 + j1.46
Note: Measured with Carrier side open.
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance — Peaking Side
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1A = 80 mA, IDQ2A = 550 mA,
Pulsed CW, 10 μsec(on), 10% Duty Cycle
55
Ideal
Pout, OUTPUT POWER (dBm)
54
53
f = 748 MHz
52
51
f = 728 MHz
50
Actual
49
48
f = 768 MHz
47
f = 748 MHz
f = 728 MHz
46
f = 768 MHz
45
44
9
10
11
12
13
15
14
17
16
19
18
20
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
728
89
49.5
110
50.4
748
87
49.4
115
50.6
768
78
48.9
105
50.2
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
728
P1dB
50.23 - j0.14
1.88 + j0.60
748
P1dB
50.23 + j1.83
1.92 + j0.10
768
P1dB
48.78 - j1.26
1.25 + j0.19
Figure 14. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MDE6IC7120NR1 MDE6IC7120GNR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
11
MDE6IC7120NR1 MDE6IC7120GNR1
12
RF Device Data
Freescale Semiconductor
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
13
MDE6IC7120NR1 MDE6IC7120GNR1
14
RF Device Data
Freescale Semiconductor
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
15
MDE6IC7120NR1 MDE6IC7120GNR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2009
Description
• Initial Release of Data Sheet
MDE6IC7120NR1 MDE6IC7120GNR1
RF Device Data
Freescale Semiconductor
17
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MDE6IC7120NR1 MDE6IC7120GNR1
Document Number: MDE6IC7120N
Rev. 0, 10/2009
18
RF Device Data
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