MMG3005NT1

Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 9, 10/2014 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a general purpose amplifier that is internally prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 800 to 2200 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF. 800--2200 MHz, 15 dB 30 dBm InGaP HBT GPA Features  Frequency: 800--2200 MHz  P1dB: 30 dBm @ 2140 MHz  Small--Signal Gain: 15 dB @ 2140 MHz  Third Order Output Intercept Point: 47 dBm @ 2140 MHz  Single 5 V Supply  Internally Prematched to 50 Ohms  In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel. PQFN 5  5 Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Symbol 900 MHz 1960 MHz 2140 MHz Unit Small--Signal Gain (S21) Gp 18.5 15.5 15 dB Input Return Loss (S11) IRL --14 --10 --11 dB Output Return Loss (S22) ORL --12 --7 --7 dB Power Output @1dB Compression P1db 30 30 30 dBm Third Order Output Intercept Point OIP3 47 47 47 dBm Characteristic Symbol Value Unit Supply Voltage VDC 6 V Supply Current IDC 600 mA RF Input Power Pin 18 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 150 C 1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100C, 5 Vdc, 480 mA, no RF applied Symbol Value (2) Unit RJC 21.5 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.  Freescale Semiconductor, Inc., 2005--2011, 2014. All rights reserved. RF Device Data Freescale Semiconductor MMG3005NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Characteristic Gp 14 15 — dB Input Return Loss (S11) IRL — --11 — dB Output Return Loss (S22) ORL — --7 — dB Power Output @ 1dB Compression P1dB — 30 — dBm Third Order Output Intercept Point OIP3 — 47 — dBm Noise Figure NF — 5 — dB Supply Current IDC 420 480 520 mA Supply Voltage VDC — 5 — V Table 5. Functional Pin Description Name Pin Number RFin 3, 4 RFout/ VCC 10, 11, 12 VCC 14 Collector voltage supply. VBA 16 Bias voltage supply. GND Backside Center Metal Description RF input for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. RF output for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. VBA N.C. VCC 16 15 14 13 N.C. 2 12 RFout/VCC RFin 3 11 RFout/VCC RFin 4 10 RFout/VCC N.C. 5 9 N.C. N.C. 1 N.C. 6 7 8 N.C. N.C. N.C. The center metal base of the PQFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1A Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C MMG3005NT1 2 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS ICC, COLLECTOR CURRENT (mA) 600 480 360 240 120 VBA N.C. VCC 16 15 14 13 N.C. 2 12 RFout/VCC RFin 3 11 RFout/VCC RFin 4 10 RFout/VCC N.C. 5 9 N.C. N.C. 1 N.C. VCC = 5 Vdc 6 8 N.C. N.C. N.C. 0 0 7 1 2 3 4 (Top View) 5 Pin Connections VBA, BIAS VOLTAGE (V) 106 55 50 IDC = 480 mA 400 mA 45 MTTF (YEARS) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Figure 2. Collector Current versus Bias Voltage at Pin 16 320 mA 40 35 30 105 104 VDC = 5 Vdc f1 = 2140 MHz f2 = 2141 MHz 25 103 20 5 10 15 20 25 30 120 125 130 135 140 145 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (C) NOTE: Supply current is varied under external resistor control. Peak power is not reduced at any listed current. Similar results can be obtained for other frequency bands. Figure 4. MTTF versus Junction Temperature 150 NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 480 mA Figure 3. Third Order Output Intercept Point versus Output Power and Supply Current MMG3005NT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R2 R1 C3 C4 C5 1 RF INPUT Z1 Z2 C1 Z3 C7 15 14 Current Mirror 2 3 13 L1 12 Z4 11 DUT 4 5 Z1, Z7 Z2, Z6 Z3 16 6 7 Z5 0.140 x 0.028 Microstrip 0.057 x 0.028 Microstrip 0.342 x 0.028 Microstrip Z6 C8 10 8 C6 Z7 RF OUTPUT C2 9 Z4 Z5 PCB 0.119 x 0.028 Microstrip 0.223 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 5. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C5 0.01 F Chip Capacitors C0603C103J5RAC Kemet C4, C6 0.1 F Chip Capacitors C0603C104J5RAC Kemet C7 6.8 pF Chip Capacitor 06035J6R8BS AVX C8 5.6 pF Chip Capacitor 06035J5R6BS AVX L1 15 nH Chip Inductor 1008CS--150XJB Coilcraft R1 33 Ω, 1/10 W Chip Resistor CRCW060333R0FKEA Vishay R2 0 Ω, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMG3005NT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY R2 R1 C3 C5 C6 C4 L1 RFin C1 C7 RFout C8 C2 MMG3004/5 Rev 3 Figure 6. 50 Ohm Test Circuit Component Layout MMG3005NT1 RF Device Data Freescale Semiconductor 5 50 OHM TYPICAL CHARACTERISTICS: 900 MHz --10 TC = --40C 19 18 85C IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 20 25C 17 16 --11 --12 85C --13 --14 VDC = 5 Vdc 15 840 VDC = 5 Vdc 870 900 930 --15 840 960 Figure 8. Input Return Loss (S11) versus Frequency 960 P1dB, 1 dB COMPRESSION POINT (dBm) 32 --9 TC = --40C --11 --13 25C VDC = 5 Vdc 85C 870 900 930 31 TC = --40C 30 85C 25C 29 VDC = 5 Vdc 28 840 960 870 900 930 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 9. Output Return Loss (S22) versus Frequency Figure 10. P1dB versus Frequency 50 960 10 TC = --40C 48 8 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) 930 Figure 7. Small--Signal Gain (S21) versus Frequency --15 840 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 900 f, FREQUENCY (MHz) --7 25C 46 85C 44 40 840 870 f, FREQUENCY (MHz) --5 42 TC = --40C 25C --40C 4 25C 2 VDC = 5 Vdc 1 MHz Tone Spacing 870 TC = 85C 6 VDC = 5 Vdc 900 930 960 0 840 870 900 930 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 11. Third Order Output Intercept Point versus Frequency Figure 12. Noise Figure versus Frequency 960 MMG3005NT1 6 RF Device Data Freescale Semiconductor --35 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz VDC = 5 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --40 --45 TC = --40C 25C --50 85C --55 24 25 26 27 28 29 VDC = 5 Vdc, f = 900 MHz Single--Carrier IS--95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth --40 --50 --60 TC = 85C --70 25C --40C --80 19 21 23 25 27 29 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 13. IS--95 Adjacent Channel Power Ratio versus Output Power Figure 14. IS--95 Adjacent Channel Power Ratio versus Output Power MMG3005NT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 1800--2200 MHz VSUPPLY R2 R1 C3 C4 C5 1 RF INPUT Z1 Z2 C1 Z3 C7 15 14 Current Mirror 2 3 13 12 11 DUT 4 5 Z1, Z7 Z2 Z3 Z4 16 6 7 L1 Z4 0.140 x 0.028 Microstrip 0.269 x 0.028 Microstrip 0.130 x 0.028 Microstrip 0.044 x 0.028 Microstrip Z5 Z6 Z7 RF OUTPUT C2 C8 10 8 C6 9 Z5 Z6 PCB 0.075 x 0.028 Microstrip 0.280 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 15. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 15 pF Chip Capacitor ECUV1H150JCV Panasonic C2 1.8 pF Chip Capacitor 06035J1R8BS AVX C3, C5 0.01 F Chip Capacitors C0603C103J5RAC Kemet C4, C6 0.1 F Chip Capacitors C0603C104J5RAC Kemet C7 2.7 pF Chip Capacitor 06035J2R7BS AVX C8 1.2 pF Chip Capacitor 06035J1R2BS AVX L1 15 nH Chip Inductor 1008CS--150XJB Coilcraft R1 33 Ω, 1/10 W Chip Resistor CRCW060333R0FKEA Vishay R2 0 Ω, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMG3005NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1800--2200 MHz VBA VSUPPLY R2 R1 C5 C6 C3 C4 L1 RFin C1 C7 C8 RFout C2 MMG3004/5 Rev 3 Figure 16. 50 Ohm Test Circuit Component Layout MMG3005NT1 RF Device Data Freescale Semiconductor 9 50 OHM TYPICAL CHARACTERISTICS: 1800--2200 MHz --5 17 IRL, INPUT RETURN LOSS (dB) Gp, SMALL--SIGNAL GAIN (dB) 18 TC = --40C 16 15 85C 25C 14 13 VDC = 5 Vdc 12 1900 1960 2020 2080 2140 Figure 17. Small--Signal Gain (S21) versus Frequency Figure 18. Input Return Loss (S11) versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) --4 --6 TC = --40C --8 85C VDC = 5 Vdc 1960 2020 2080 25C 2140 2140 2200 31 TC = --40C 25C 30 85C 29 VDC = 5 Vdc 28 1900 2200 1960 2020 2080 2140 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 19. Output Return Loss (S22) versus Frequency Figure 20. P1dB versus Frequency 50 2200 10 48 8 TC = --40C NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) 1960 32 --10 1900 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) VDC = 5 Vdc 2020 2080 f, FREQUENCY (MHz) --2 25C 46 85C 44 40 1900 85C --15 f, FREQUENCY (MHz) 0 42 25C --20 1900 2200 TC = --40C --10 TC = 85C 4 --40C 25C 2 VDC = 5 Vdc 1 MHz Tone Spacing 1960 6 VDC = 5 Vdc 2020 2080 2140 2200 0 1900 1960 2020 2080 2140 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 21. Third Order Output Intercept Point versus Frequency Figure 22. Noise Figure versus Frequency 2200 MMG3005NT1 10 RF Device Data Freescale Semiconductor ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 1800--2200 MHz --35 VDC = 5 Vdc, f = 1960 MHz Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --40 --45 25C TC = 85C --40C --50 --55 24 25 26 27 28 29 VDC = 5 Vdc, f = 1960 MHz Single--Carrier IS--95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth --40 --50 --60 TC = 85C --70 --40C 25C --80 19 21 23 25 27 29 Pout, OUTPUT POWER (dBm) Figure 23. IS--95 Adjacent Channel Power Ratio versus Output Power Figure 24. IS--95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Pout, OUTPUT POWER (dBm) --20 --30 TC = 85C --40 25C --40C --50 --60 VDC = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --70 18 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 25. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power MMG3005NT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11|  |S21|  |S12|  |S22|  250 0.70575 --173.81 5.06022 143.91 0.00976 --49.75 0.84913 174.65 300 0.73140 --174.91 4.79122 137.40 0.00866 --46.60 0.84273 173.16 350 0.75442 --176.26 4.52885 131.51 0.00773 --43.76 0.83759 172.12 400 0.77553 --177.67 4.27831 126.11 0.00689 --40.58 0.83409 171.28 450 0.79364 --179.04 4.03762 121.18 0.00618 --36.61 0.83042 170.63 500 0.80933 179.58 3.82617 116.75 0.00565 --31.68 0.83214 170.43 550 0.82301 178.27 3.62033 112.46 0.00523 --26.34 0.83079 169.99 600 0.83429 177.07 3.43310 108.55 0.00494 --20.59 0.82956 169.83 650 0.84357 175.98 3.26377 104.82 0.00478 --15.13 0.82812 169.78 700 0.85132 174.99 3.10735 101.29 0.00468 --10.28 0.82590 169.86 750 0.85696 174.16 2.96322 97.96 0.00459 --5.76 0.82489 170.15 800 0.86176 173.35 2.82568 94.86 0.00454 --1.51 0.82589 170.57 850 0.86572 172.60 2.70160 92.31 0.00452 3.52 0.82783 171.07 900 0.86813 171.85 2.60468 90.11 0.00455 7.99 0.83010 171.50 950 0.86945 171.15 2.53732 88.04 0.00475 12.64 0.83192 172.00 1000 0.86974 170.42 2.48944 85.86 0.00498 15.23 0.83202 172.45 1050 0.86842 169.66 2.45821 83.61 0.00517 16.96 0.83128 172.96 1100 0.86533 168.91 2.44429 81.27 0.00537 18.37 0.82923 173.50 1150 0.86095 168.14 2.44811 78.81 0.00562 19.48 0.82679 174.01 1200 0.85480 167.25 2.46595 76.18 0.00589 19.73 0.82313 174.63 1250 0.84684 166.25 2.49650 73.39 0.00614 19.47 0.81800 175.29 1300 0.83707 165.18 2.54318 70.39 0.00639 18.66 0.81154 176.08 1350 0.82469 164.00 2.60413 67.17 0.00664 17.14 0.80396 176.98 1400 0.80971 162.76 2.68767 63.69 0.00686 15.10 0.79812 177.98 1450 0.79087 161.42 2.79189 59.73 0.00707 12.45 0.79179 178.83 1500 0.76847 160.03 2.91082 55.24 0.00723 8.99 0.78258 179.68 1550 0.74126 158.60 3.04944 50.25 0.00735 4.62 0.77256 --179.28 1600 0.70933 157.30 3.20126 44.67 0.00737 --0.89 0.76200 --178.18 1650 0.67261 156.25 3.36356 38.42 0.00727 --7.59 0.75243 --176.93 1700 0.63202 155.73 3.53052 31.45 0.00702 --15.85 0.74435 --175.63 1750 0.59058 156.13 3.69596 23.72 0.00657 --25.99 0.73950 --174.33 1800 0.55219 157.76 3.84647 15.21 0.00592 --38.78 0.73766 --173.25 1850 0.53906 175.46 3.84639 5.98 0.00493 --55.47 0.74863 173.64 1900 0.55077 --178.72 3.76728 --3.57 0.00394 --78.20 0.76239 172.14 1950 0.58350 --174.08 3.61364 --13.31 0.00325 --110.26 0.77658 170.13 2000 0.63044 --171.29 3.40538 --22.98 0.00325 --147.37 0.78891 167.72 2050 0.68283 --170.32 3.15278 --32.28 0.00389 --177.72 0.79795 164.96 2100 0.73327 --170.78 2.87824 --41.07 0.00480 161.34 0.80422 162.03 2150 0.77875 --172.14 2.60183 --49.24 0.00576 146.52 0.80618 159.04 2200 0.81666 --174.06 2.33461 --56.78 0.00658 135.49 0.80601 156.02 2250 0.84807 --176.25 2.08577 --63.69 0.00728 126.95 0.80299 153.08 2300 0.87279 --178.55 1.85911 --70.01 0.00782 120.20 0.79865 150.21 2350 0.89261 179.07 1.65704 --75.82 0.00823 114.85 0.79341 147.45 2400 0.90758 176.70 1.47812 --81.19 0.00851 110.74 0.78715 144.80 2450 0.91984 174.31 1.32091 --86.22 0.00868 107.68 0.78067 142.25 (continued) MMG3005NT1 12 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11|  |S21|  |S12|  |S22|  2500 0.92917 171.99 1.18240 --90.93 0.00876 105.84 0.77298 139.76 2550 0.93606 169.65 1.06136 --95.41 0.00878 105.17 0.76528 137.41 2600 0.94249 167.38 0.95471 --99.69 0.00880 105.76 0.75557 135.15 2650 0.94659 165.17 0.86109 --103.83 0.00882 107.70 0.74569 132.95 2700 0.95002 163.00 0.77869 --107.89 0.00894 111.20 0.73387 130.86 2750 0.95243 160.86 0.70576 --111.91 0.00932 116.13 0.72034 128.82 2800 0.95418 158.70 0.64070 --115.96 0.01006 121.98 0.70405 126.97 2850 0.95534 156.67 0.58229 --120.08 0.01141 127.95 0.68401 125.22 2900 0.95570 154.64 0.52887 --124.40 0.01358 132.34 0.65990 123.77 2950 0.95565 152.68 0.47907 --128.91 0.01662 134.33 0.63014 122.76 3000 0.95487 150.86 0.43144 --133.65 0.02061 133.72 0.59605 122.51 MMG3005NT1 RF Device Data Freescale Semiconductor 13 2.2 x 2.2 1.35 0.6 2.6 5.3 0.8 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES. Figure 26. Recommended Mounting Configuration M005N YYWW Figure 27. Product Marking MMG3005NT1 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3005NT1 RF Device Data Freescale Semiconductor 15 MMG3005NT1 16 RF Device Data Freescale Semiconductor MMG3005NT1 RF Device Data Freescale Semiconductor 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN3100: General Purpose Amplifier Biasing  AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation Software  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 3 Mar. 2007  Replaced Case Outline 1543--02 with updated 1543--03, Issue C, pp. 1, 16--18  Added VCC callout to Pin Connections 10, 11, and 12 in Fig. 1, Pin Connections, p. 3  Updated Part Numbers in Table 8, Component Designations and Values, 900 MHz, to RoHS compliant part numbers, p. 5  Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 5, 50 Ohm Test Circuit Component Layout, 900 MHz, p. 6  Removed IDC value due to its variability over temperature, Figs. 12--13, IS--95 Adjacent Channel Power Ratio versus Output Power, 900 MHz, p. 8  Updated Part Numbers in Table 9, Component Designations and Values, 1800--2200 MHz, to RoHS compliant part numbers, p. 9  Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 15, 50 Ohm Test Circuit Component Layout, 1800--2200 MHz, p. 10  Removed IDC value due to its variability over temperature, Figs. 22--23, IS--95 Adjacent Channel Power Ratio versus Output Power, 1800--2200 MHz, and Fig. 24, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power, 1800--2200 MHz, p. 12  Added Product Documentation and Revision History, p. 19 4 Feb. 2008  Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1  Changed Table 4, Electrical Characteristics Supply Current Min value from 455 mA to 420 mA, p. 2  Corrected S--Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, pp. 13, 14 5 Apr. 2008  Corrected Tape and Reel information from 12 mm, 7--inch Reel to 16 mm, 13--inch Reel, p. 1  Corrected Fig. 24, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis (ACPR) unit of measure to dBc, p. 12 6 June 2009  Replaced Case Outline 1543--03, Issue C, with 1543--04, Issue D, pp. 1, 16--18. Corrected I/O dimension from 0.95--1.2 mm to 0.925--1.175 mm.  Corrected temperature at which ThetaJC is measured from 25C to 100C, Thermal Characteristics table, p. 1 7 May 2010  Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current, p. 4  Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation, Application Notes, p. 19  Added .s2p File availability to Product Software, p. 19 MMG3005NT1 18 RF Device Data Freescale Semiconductor REVISION HISTORY (continued) Revision Date 8 Jan. 2011 Description  Corrected temperature at which ThetaJC is measured from 25C to 100C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1  Removed IDC bias callout from Table 10, Common Source S--Parameters heading as bias is not a controlled value, pp. 13--14  Added Printed Circuit Boards availability to Development Tools, p. 19 9 Oct. 2014  Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2  Added Fig. 27, Product Marking, p. 14  Added Failure Analysis information, p. 18 MMG3005NT1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2005--2011, 2014 Freescale Semiconductor, Inc. MMG3005NT1 Document Number: MMG3005NT1 Rev. 9, 10/2014 20 RF Device Data Freescale Semiconductor