MRF5P21180HR5

Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 3, 10/2008 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF5P21180HR6 Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 2110--2170 MHz, 38 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFET CASE 375D--05, STYLE 1 NI--1230 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 530 3.0 W W/°C Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 180 W CW Case Temperature 71°C, 38 W CW RθJC °C/W 0.31 0.33 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.  Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF5P21180HR6 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1 µAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1600 mAdc) VGS(Q) — 3.6 — Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.26 0.3 Vdc Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) gfs — 5 — S Crss — 1.7 — pF Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg., f = 2157.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 14 — dB Drain Efficiency ηD 23 25.5 — % Intermodulation Distortion IM3 — --37.5 --35 dBc ACPR — --41 --38 dBc IRL — --14 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push--pull configuration. MRF5P21180HR6 2 RF Device Data Freescale Semiconductor VBIAS R2 C8 + C9 C16 + C18 + C19 + VSUPPLY C20 Z15 R1 + C23 R6 C13 C11 C5 Z13 Z24 Z17 Z11 Z3 Z5 Z7 Z25 Z19 C4 Z9 C1 RF INPUT Z1 Z2 Z21 DUT Z4 Z6 Z8 Z26 RF OUTPUT Z10 C2 Z14 VBIAS Z22 Z23 Z18 Z20 Z12 R3 C3 Z16 R4 + C24 R5 C14 C12 C6 C7 Z1, Z22 Z2, Z21 Z3, Z20 Z4, Z19 Z5, Z6 Z7, Z8 Z9, Z10 1.000″ x 0.066″ Microstrip 0.760″ x 0.113″ Microstrip 0.068″ x 0.066″ Microstrip 1.672″ x 0.066″ Microstrip 0.318″ x 0.066″ Microstrip 0.284″ x 0.180″ Microstrip 0.094″ x 0.650″ Microstrip Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z23, Z24 Z25, Z26 PCB + C10 C15 + C17 + C21 + VSUPPLY C22 1.030″ x 0.035″ Microstrip 0.083″ x 0.650″ Microstrip 0.550″ x 0.058″ Microstrip 0.353″ x 0.066″ Microstrip 0.417″ x 0.650″ Microstrip 0.161″ x 0.650″ Microstrip Taconic RF--35, 0.030″, εr = 3.5 Figure 1. MRF5P21180HR6 Test Circuit Schematic Table 5. MRF5P21180HR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 30 pF Chip Capacitors ATC100B300JT500XT ATC C5, C6, C7, C8 5.6 pF Chip Capacitors ATC100B5R6JT500XT ATC C9, C10 10 µF Tantalum Capacitors T495X106K035AT Kemet C11, C12 1000 pF Chip Capacitors ATC100B102JT500XT ATC C13, C14, C15, C16 0.1 µF Chip Capacitors CDR33BX104AKYS Kemet C17, C18, C19, C20, C21, C22 22 µF Tantalum Capacitors T491X226K035AT Kemet C23, C24 1.0 µF Tantalum Capacitors T491C105M050AT Kemet R1, R2, R3, R4 10 Ω, 1/4 W Chip Resistors CRCW120610R0FKEA Vishay R5, R6 1.0 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay MRF5P21180HR6 RF Device Data Freescale Semiconductor 3 C23 VGG R6 R1 C13 C11 R2 C16 C18 C19 C5 VDD C8 C9 C20 C4 CUT OUT AREA C1 C2 C3 C22 C7 VGG R5 R4 C24 R3 C14 C12 C10 VDD C6 C15 C17 C21 MRF5P21180 Rev 5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5P21180HR6 Test Circuit Component Layout MRF5P21180HR6 4 RF Device Data Freescale Semiconductor 14 G ps , POWER GAIN (dB) 13 35 30 ηD 12 11 VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA 25 2--Carrier W--CDMA, 10 MHz Carrier Spacing 20 3.84 MHz Channel Bandwidth --20 PAR = 8.5 dB @ 0.01% Probability (CCDF) --25 IRL 10 9 8 --30 IM3 7 --35 ACPR 6 5 2080 2100 --40 2120 2140 2160 --45 2200 2180 --10 --15 --20 --25 --30 --35 IRL, INPUT RETURN LOSS (dB) 40 Gps IM3 (dBc), ACPR (dBc) 15 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. 2--Carrier W--CDMA Broadband Performance --20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 15 G ps , POWER GAIN (dB) IDQ = 2400 mA 14.5 2000 mA 1600 mA 14 1200 mA 13.5 800 mA 13 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing 12.5 40 20 60 80 100 200 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing --25 --30 IDQ = 800 mA 2400 mA --35 2000 mA --40 1200 mA --45 1600 mA --50 300 20 40 Pout, OUTPUT POWER (WATTS) PEP --20 58 --25 56 3rd Order --35 --40 5th Order --45 7th Order --50 VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1600 mA Two--Tone Measurements (f1+f2)/2 = Center Frequency of 2140 MHz --55 --60 0.1 1 80 100 200 300 Figure 5. Third Order Intermodulation Distortion versus Output Power Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Two--Tone Power Gain versus Output Power --30 60 Pout, OUTPUT POWER (WATTS) PEP 10 Ideal P3dB = 53.72 dBm (236 W) 54 P1dB = 52.99 dBm (199 W) 50 48 46 VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 µsec(on), 1 msec (off) f = 2140 MHz 44 42 20 30 Actual 52 30 32 34 36 38 40 42 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MRF5P21180HR6 RF Device Data Freescale Semiconductor 5 40 1010 --15 VDD = 28 Vdc, IDQ = 1600 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W--CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 30 --20 --25 25 --30 20 --35 ηD Gps 15 IM3 --40 10 --45 ACPR 5 --50 0 --55 4 6 8 10 30 50 IM3 (dBc), ACPR (dBc) 35 MTTF FACTOR (HOURS x AMPS2 ) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 109 108 107 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) W--CDMA This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature W--CDMA TEST SIGNAL 100 --20 10 --40 --50 1 --60 (dB) PROBABILITY (%) 3.84 MHz Channel BW --30 0.1 --70 --80 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 --90 --100 --110 0.0001 0 2 4 6 8 10 PEAK--TO--AVERAGE (dB) Figure 10. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal --120 --25 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --20 --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 11. 2-Carrier W-CDMA Spectrum MRF5P21180HR6 6 RF Device Data Freescale Semiconductor Zo = 25 Ω Zload f = 2110 MHz f = 2170 MHz f = 2170 MHz f = 2110 MHz Zsource VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg. f MHz Zsource Ω Zload Ω 2110 5.39 -- j13.89 3.69 -- j10.51 2140 5.66 -- j13.99 3.81 -- j10.66 2170 5.53 -- j14.51 3.79 -- j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 12. Series Equivalent Source and Load Impedance MRF5P21180HR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS 2X A Q A bbb M T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. G 4 B L 1 2 3 4 B 4X (FLANGE) 4X K D aaa M T A M B M ccc ccc M T A M B M M T A M B M R (LID) N (LID) F H C E S PIN 5 T M (INSULATOR) bbb M T A M B SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D--05 ISSUE E NI--1230 MRF5P21180HR6 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 3 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 9 MRF5P21180HR6 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2008. All rights reserved. MRF5P21180HR6 Document Number: MRF5P21180HR6 Rev. 3, 10/2008 10 RF Device Data Freescale Semiconductor