Freescale Semiconductor
Technical Data
Document Number: MRF6S19100H
Rev. 5, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S19100HR3
MRF6S19100HSR3
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA,
Pout = 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
RθJC
0.44
0.50
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2004 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f = 1987 MHz, 2 - carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in
1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
15
16.1
18
dB
Drain Efficiency
ηD
26
28
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 15
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S19100HR3 MRF6S19100HSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
Z1
+
+
+
C8
C9
C10 C11
C12
+
R2
RF
INPUT
C7
+
Z2
C5
Z3
Z7
C4
R1
Z4
Z5
Z8
Z9
Z10
Z11
VSUPPLY
RF
OUTPUT
C6
Z6
C3
C1
Z1
Z2
Z3
Z4
Z5
Z6
DUT
C2
0.130″ x 0.084″ Microstrip
0.360″ x 0.084″ Microstrip
0.260″ x 0.084″ Microstrip
0.950″ x 0.084″ Microstrip
0.457″ x 0.940″ Microstrip
0.083″ x 0.940″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.091″ x 0.900″ Microstrip
0.493″ x 0.900″ Microstrip
0.440″ x 0.195″ Microstrip
0.470″ x 0.084″ Microstrip
0.735″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Bead
2743019447
Fair - Rite
C1, C2
0.6 - 4.5 pF Variable Capacitors, Gigatronics
27271SL
Johanson Dielectrics
C3
15 pF Chip Capacitor
ATC100B150CT500XT
ATC
C4, C7
5.6 pF Chip Capacitors
ATC100B5R6JT500XT
ATC
C5
1 μF, 50 V Tantalum Chip Capacitor
T491C105K050AT
Kemet
C6
43 pF Chip Capacitor
ATC100B430CT500XT
ATC
C8, C10
22 μF, 35 V Tantalum Chip Capacitors
T491X226K035AT
Kemet
C9
10 μF, 35 V Tantalum Chip Capacitor
T491C106K035AT
Kemet
C11
0.1 μF Chip Capacitor
C1825C14J5RAC
Kemet
C12
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB- 1017 - RH
Multicomp
R1
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
R2
2 kW, 1/4 W Chip Resistor
CRCW12062001FKEA
Vishay
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
3
C8 C9
B1
VGG
R2
C7
C5
C2
C1
1
C4
C12
C3
+ VDD
-
C10
C6
CUT OUT AREA
C1
R1
MRF6S19100H/HS
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
MRF6S19100HR3 MRF6S19100HSR3
4
RF Device Data
Freescale Semiconductor
Gps, POWER GAIN (dB)
16.4
27
Gps
16.2
25
16
IM3
15.8
IRL
15.6
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
−35
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
−41
−47
ACPR
15.4
1930
1940
1960
1950
1970
−53
1990
1980
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
29
ηD
IM3 (dBc), ACPR (dBc)
16.6
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
42
ηD
40
15.8
15.6
Gps
IM3
15.4
15.2
15
14.8
1930
38
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
−25
−30
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL
−35
ACPR
−40
1940
1960
1950
−45
1990
1980
1970
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
16
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
16.2
ηD, DRAIN
EFFICIENCY (%)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg.
−15
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
18
IDQ = 1300 mA
Gps, POWER GAIN (dB)
17
1125 mA
16
900 mA
675 mA
15
450 mA
14
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
13
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−25
−30
IDQ = 450 mA
675 mA
−35
−40
1300 mA
−45
1125 mA
900 mA
−50
−55
1
10
100
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
5
0
55
Pout, OUTPUT POWER (dBm)
−10
56
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 900 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
−30
3rd Order
−40
5th Order
−50
7th Order
P3dB = 51.56 dBm (143.2 W)
1
53
P1dB = 50.9 dBm (124.2 W)
52
Actual
51
50
49
48
46
30
100
10
Ideal
54
47
−60
0.1
31
32
33
34
VDD = 28 Vdc, IDQ = 900 mA
Pulsed CW, 8 μsec(on), 1
msec(off)
f = 1960 MHz
35
36
37
38
39
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
60
VDD = 28 Vdc, IDQ = 900 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
50
40
−10
ηD
IM3
−20
−30
ACPR
30
−40
20
−50
Gps
10
0
10
4
100
40
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−60
−70
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
70
18
16
60
16.5
15
50
14
40
17
30
12
20
ηD
VDD = 28 Vdc
IDQ = 900 mA
f = 1960 MHz
11
10
3
10
100
10
0
200
Gps, POWER GAIN (dB)
13
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Gps
15
VDD = 32 V
13.5
28 V
12
24 V
10.5
9
IDQ = 900 mA
f = 1960 MHz
7.5
6
0
25
50
75
100
125
150
175
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
200
MRF6S19100HR3 MRF6S19100HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 22 W Avg., and ηD = 28%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
0
1.2288 MHz
Channel BW
−10
−20
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
7
f = 1990 MHz
Zload
f = 1930 MHz
f = 1990 MHz
Zsource
Zo = 5 Ω
f = 1930 MHz
VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
1.57 - j3.50
2.26 - j2.31
1960
1.83 - j3.29
2.22 - j2.13
1990
2.34 - j3.71
2.14 - j2.00
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19100HR3 MRF6S19100HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
B
M
M
M
ccc
M
T A
M
aaa
M
T A
M
ccc
H
(LID)
B
S
(LID)
M
T A
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF6S19100HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S19100HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
5
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers,
p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6S19100HR3 MRF6S19100HSR3
10
RF Device Data
Freescale Semiconductor
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