Freescale Semiconductor
Technical Data
Document Number: MRF6S21050L
Rev. 2, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S21050LR3
MRF6S21050LSR3
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,
Pout = 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
2110 - 2170 MHz, 11.5 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF6S21050LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF6S21050LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
RθJC
1.16
1.28
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q)
2
2.9
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.1 Adc)
VDS(on)
—
0.21
0.3
Vdc
Crss
—
0.75
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f = 2157 MHz, 2 - carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
26
27.7
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 40
- 38
dBc
IRL
—
- 15
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3
2
RF Device Data
Freescale Semiconductor
B1
R1
VBIAS
VSUPPLY
+
C7
+
C6
C5
C4
C3
C8
Z6
RF
INPUT
Z1
Z2
Z3
Z4
0.750″
0.905″
0.435″
0.073″
0.070″
C10
Z8
C11
Z9
+
C13
Z10
RF
OUTPUT
+
C14
C2
Z5
C1
Z1, Z10
Z2
Z3
Z4
Z5
Z7
C9
+
C12
DUT
x 0.084″
x 0.084″
x 0.173″
x 0.333″
x 0.333″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z6
Z7
Z8
Z9
PCB
0.113″ x 0.590″ Microstrip
0.325″ x 0.590″ Microstrip
0.214″ x 0.150″ Microstrip
0.723″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic
Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Bead, Surface Mount
2743019447
Fair - Rite
C1, C2, C3, C8
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C4
0.01 μF Chip Capacitor
C1825C103J1RAC
Kemet
C5, C11
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C6
22 μF, 25 V Tantalum Capacitor
T491D226K025AT
Kemet
C7
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C9, C10
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C12
47 μF, 50 V Electrolytic Capacitor
EMVY500ADA470MF80G
Nippon
C13, C14
220 μF, 50 V Electrolytic Capacitors
EMVY500ADA221MJA0G
Chemi - Con
R1
3.3 W, 1/3 W Chip Resistor
CRCW12103R30FKEA
Vishay
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
3
C11
C10
C12
C13
C3
B1
C8
R1
C9
C4, C5*
C6
C14
CUT OUT AREA
C7
C1
C2
MRF6S21050L Rev. 1
* C4 on bottom, C5 on top.
Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout
MRF6S21050LR3 MRF6S21050LSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
28
Gps, POWER GAIN (dB)
16.2
26
VDD = 28 Vdc, Pout = 11.5 W (Avg.)
16.1 I = 450 mA, 2−Carrier W−CDMA
DQ
16 10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
15.9 Probability (CCDF)
22
−32
15.8
15.7
24
Gps
−34
IRL
−36
IM3
15.6
15.5
−38
−40
ACPR
−42
15.4
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
−10
−20
−30
−40
−50
−60
IRL, INPUT RETURN LOSS (dB)
16.3
ηD, DRAIN
EFFICIENCY (%)
30
ηD
IM3 (dBc), ACPR (dBc)
16.4
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 11.5 Watts
40
Gps, POWER GAIN (dB)
15.8
15.7
15.6
15.5
39
VDD = 28 Vdc, Pout = 23 W (Avg.)
IDQ = 450 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
38
37
Gps
−24
15.4
−26
15.3
−28
15.2
IRL
IM3
−30
15.1
−32
ACPR
15
−34
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
−10
−15
−20
−25
−30
−35
IRL, INPUT RETURN LOSS (dB)
15.9
ηD, DRAIN
EFFICIENCY (%)
41
ηD
IM3 (dBc), ACPR (dBc)
16
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts
17.5
17
Gps, POWER GAIN (dB)
560 mA
16.5
450 mA
16
15.5
335 mA
15
14.5
VDD = 28 Vdc, f1 = 2135 MHz
f2 = 2145 MHz, Two−Tone
Measurements, 10 MHz Tone Spacing
225 mA
14
13.5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
IDQ = 675 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
675 mA
−30
IDQ = 225 mA
−40
335 mA
−50
560 mA
450 mA
−60
0.1
1
10
100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
5
−10
52
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
3rd Order
−30
5th Order
−40
7th Order
−50
50
P1dB = 47.89 dBm (61.52 W)
49
Actual
48
47
46
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
45
−60
0.01
Ideal
P3dB = 48.66 dBm (73.43 W)
51
Pout, OUTPUT POWER (dBm)
−20
44
0.1
10
1
100
28
29
30
31
32
33
34
35
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
40
35
30
36
−20
VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IM3
−25
−30
−35
25
ACPR
20
−40
Gps
15
−45
10
−50
−55
ηD
5
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
−60
0.2
1
10
30
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
64
16
56
Gps
15.5
48
15
40
14.5
32
24
14
13.5
VDD = 28 Vdc
IDQ = 450 mA
f = 2140 MHz
ηD
16
8
10
IDQ = 450 mA
f = 2140 MHz
16.5
16
15.5
15
14.5
14
13.5
13
13
3
17
Gps, POWER GAIN (dB)
16.5
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
100
VDD = 24 V
28 V
50
70
32 V
12.5
12
0
10
20
30
40
60
80
90
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
100
MRF6S21050LR3 MRF6S21050LSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 11.5 W Avg., and ηD = 27.7%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−20
−30
−40
−50
−60
0.001
−70
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
7
Zo = 25 Ω
f = 2200 MHz
Zload
f = 2080 MHz
Zsource
f = 2200 MHz
f = 2080 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
2090
2100
4.09 - j14.65
3.74 - j13.95
3.95 - j13.36
2.36 - j7.52
2.25 - j7.11
2.40 - j6.78
2110
4.44 - j13.00
2.68 - j6.59
2120
2130
2140
2150
2160
2170
2180
2190
2200
5.03
5.55
5.76
5.57
4.86
4.04
3.69
3.91
4.41
2.99
3.26
3.32
3.20
2.82
2.44
2.33
2.49
2.77
-
j12.89
j13.05
j13.26
j13.70
j13.92
j13.61
j12.91
j12.44
j12.32
-
j6.52
j6.64
j6.68
j6.87
j6.93
j6.70
j6.29
j6.05
j5.96
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21050LR3 MRF6S21050LSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
3
2X K
B
2
2X D
bbb
M
T A
B
M
M
N (LID)
ccc
M
T A
M
B
ccc
M
aaa
M
T A
B
M
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
H
B
M
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF6S21050LR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF6S21050LSR3
MRF6S21050LR3 MRF6S21050LSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Low Gold Plating bullet from Features section as functionality is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6S21050LR3 MRF6S21050LSR3
10
RF Device Data
Freescale Semiconductor
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MRF6S21050LR3 MRF6S21050LSR3
Document
Number:
RF
Device
Data MRF6S21050L
Rev. 2, 12/2008
Freescale
Semiconductor
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