Freescale Semiconductor
Technical Data
Document Number: MRF6S27085H
Rev. 3, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S27085HR3
MRF6S27085HSR3
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
900 mA, Pout = 20 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — - 48 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2600- 2700 MHz, 20 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27085HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27085HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
RθJC
0.50
0.56
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
0.3
Vdc
Crss
—
2.8
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. N - CDMA, f = 2660 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14
15.5
17
dB
Drain Efficiency
ηD
21
23.5
—
%
ACPR
—
- 48
- 45
dBc
IRL
—
- 13
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S27085HR3 MRF6S27085HSR3
2
RF Device Data
Freescale Semiconductor
L1
B1
VBIAS
+
+
C11
C10
B2
C9
C8
C3
C4
C5
+
+
C6
C7
VSUPPLY
R1
Z9
Z1
RF
INPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z16
C2
Z8
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10 Z11 Z12 Z13 Z14 Z15
RF
OUTPUT
DUT
0.672″ x 0.081″ Microstrip
0.050″ x 0.250″ Microstrip
0.288″ x 0.081″ Microstrip
0.200″ x 0.480″ Microstrip
0.270″ x 0.172″ Microstrip
0.260″ x 0.810″ Microstrip
0.366″ x 0.490″ Microstrip
0.083″ x 0.490″ Microstrip
0.091″ x 0.753″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.287″ x 0.753″ Microstrip
0.220″ x 0.384″ Microstrip
0.122″ x 0.580″ Microstrip
0.266″ x 0.148″ Microstrip
0.130″ x 0.425″ Microstrip
0.380″ x 0.081″ Microstrip
0.703″ x 0.081″ Microstrip
Arlon GX - 0300- 5022, 0.030″, εr = 2.5
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead, Surface Mount
2508051107Y0
Fair- Rite
B2
Ferrite Bead, Surface Mount
2743019447
Fair- Rite
C1, C2
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
ATC
C3
3.6 pF Chip Capacitor
ATC100B3R6CT500XT
ATC
C4
10 μF, 50 V Chip Capacitor
GRM55DR61H106KA88B
Murata
C5, C8
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C6
47 μF, 50 V Electrolytic Capacitor
EMVK500ADA470MF80G
United Chemi - Con
C7
330 μF, 63 V Electrolytic Capacitor
EKMG630ELL331MJ20S
United Chemi - Con
C9
0.01 μF Chip Capacitor
C1825C103J1RAC
Kemet
C10
22 μF, 25 V Tantalum Capacitor
T491D226K025AT
Kemet
C11
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
L1
15 nH, Chip Inductor
L0603150GGW
AVX
R1
3.3 W, 1/3 W Chip Resistor
CRCW12103R30FKEA
Vishay
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
3
C7
C5
C11 C10
B2
C4
R1
C3
C6
B1* L1*
C8* C9*
C2
CUT OUT AREA
C1
MRF6S27085
Rev. 3
* Components stacked
Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout
MRF6S27085HR3 MRF6S27085HSR3
4
RF Device Data
Freescale Semiconductor
24
23
15.6 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
15.4 Probability (CCDF)
22
Gps
−42
IRL
−46
15.2
15
−50
ACPR
14.8
−54
ALT1
14.6
−58
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
ηD
16 VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 900 mA, Single−Carrier N−CDMA
15.8
ACPR (dBc), ALT1 (dBc)
25
16.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−10
−12
−14
−16
−18
−20
−22
−24
−26
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
15
14.8
Gps
1.2288 MHz Channel Bandwidth 34
PAR = 9.8 dB @ 0.01%
32
Probability (CCDF)
14.6
14.4
−32
IRL
−36
14.2
14
ACPR
−40
13.8
−44
ALT1
−48
13.6
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
−10
−12
−14
−16
−18
−20
−22
−24
−26
IRL, INPUT RETURN LOSS (dB)
38
VDD = 28 Vdc, Pout = 45 W (Avg.)
IDQ = 900 mA, Single−Carrier N−CDMA 36
ηD
ACPR (dBc), ALT1 (dBc)
15.2
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg.
18
IDQ = 1340 mA
17
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
1240 mA
16
900 mA
15
675 mA
14
13
440 mA
12
VDD = 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
10
1
100
300
−30
VDD = 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
1340 mA
IDQ = 440 mA
−40
1240 mA
−50
900 mA
−60
675 mA
0.1
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
56
VDD = 28 Vdc, Pout = 85 W (PEP), IDQ = 900 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
55
Pout, OUTPUT POWER (dBm)
−10
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
0.1
P3dB = 51.72 dBm (148.54 W)
Ideal
54
53
P1dB = 51 dBm (126.74 W)
52
Actual
51
50
49
VDD = 28 Vdc, IDQ = 900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2645 MHz
48
47
46
1
100
10
30
32
31
33
34
35
36
37
38
39
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
45
40
35
40
−30
ACPR
VDD = 28 Vdc, IDQ = 900 mA, f = 2645 MHz
Single−Carrier N−CDMA, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
−35
ηD
−40
−45
ALT1
30
−50
25
−55
20
Gps
15
−60
10
−65
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
0
−70
100
5
10
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. Single - Carrier N - CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
20
40
15
35
12.5
30
10
25
7.5
20
5
15
2.5
ηD
VDD = 28 Vdc, IDQ = 900 mA
f = 2645 MHz
0
10
10
5
100
15
Gps, POWER GAIN (dB)
Gps
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17.5
16
45
32 V
14
28 V
13
VDD = 24 V
12
IDQ = 900 mA
f = 2645 MHz
11
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S27085HR3 MRF6S27085HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 20 W Avg., and ηD = 23.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. ALT1 Measured in 12.5 kHz
Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−70
−80
−90
0.0001
0
2
4
6
−60
8
10
1.2288 MHz
Channel BW
................................................
.. .. . ..
.............
..
...
..
.. +ALT1 in 12.5 kHz
−ALT1 in 12.5 kHz ...
.
. Integrated BW
Integrated BW ..
..
.
..
...
.
..
.
......
.......................
...
..........
....
...
.
.
..
.
.
.
.
................
........ ...
.
.
...............
............
........
..
..............
.........
..
.
.........
.... .
.
.
.
.
. ..........
.
.
................
..............
.
.
..
.
..
.
....
.
..
....
.
.............
−ACPR
in
30
kHz
+ACPR
in
30
kHz
.
.
.
...
..
.
.
.
.
.
.
.
.
.
....................
.
.....
......
Integrated BW
Integrated BW
...............
..
.....
......
...............
...................
−100
PEAK−TO−AVERAGE (dB)
Figure 13. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
7
Zsource
f = 2700 MHz
Zload
f = 2600 MHz
f = 2600 MHz
f = 2700 MHz
Zo = 10 Ω
VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2600
8.55 - j5.42
5.86 - j4.34
2610
8.31 - j5.30
5.69 - j4.26
2620
8.21 - j5.10
5.64 - j4.15
2630
8.21 - j4.85
5.67 - j4.00
2640
8.26 - j4.57
5.72 - j3.83
2645
8.40 - j4.43
5.80 - j3.75
2650
2660
8.44 - j4.32
8.78 - j4.29
5.86 - j3.70
6.10 - j3.72
2670
8.94 - j4.59
6.19 - j4.00
2680
8.88 - j5.01
6.07 - j4.36
2690
8.57 - j5.18
5.80 - j4.48
2700
8.36 - j5.10
5.71 - j4.47
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S27085HR3 MRF6S27085HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
M
T A
B
M
M
M
ccc
M
T A
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF6S27085HR3
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S27085HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
3
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Changed minimum drain efficiency specification from 22% to 21% to match production test limits, Table 4,
Functional Tests, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers,
p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6S27085HR3 MRF6S27085HSR3
10
RF Device Data
Freescale Semiconductor
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