Freescale Semiconductor
Technical Data
Document Number: MRF6S9045N
Rev. 4, 8/2008
MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.
RF Power Field Effect Transistors
ARCHIVE INFORMATION
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 09, STYLE 1
TO - 270- 2
PLASTIC
MRF6S9045NR1
CASE 1337 - 04, STYLE 1
TO - 272- 2
PLASTIC
MRF6S9045NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, + 12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
ARCHIVE INFORMATION
MRF6S9045NR1
MRF6S9045NBR1
N - Channel Enhancement - Mode Lateral MOSFETs
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
Unit
°C/W
1.0
1.1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
ARCHIVE INFORMATION
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2
2.9
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.22
0.3
Vdc
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
77
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.78
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
21
22.7
25
dB
Drain Efficiency
ηD
30.5
32
—
%
ACPR
—
- 47
- 45
dBc
IRL
—
- 20
- 20
-9
-7
Adjacent Channel Power Ratio
Input Return Loss
MRF6S9045NR1
MRF6S9045NBR1
ARCHIVE INFORMATION
Table 4. Moisture Sensitivity Level
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MRF6S9045NR1 MRF6S9045NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system)
VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
68
—
%
IRL
—
- 12
—
dB
P1dB
—
52
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
3
B2
B1
R1
VBIAS
R2
C15
C7
L1
+
C16
C17
C18
C8
Z10
Z11
Z12
Z13
Z14
Z15
C11
C12
C13
RF
Z16 OUTPUT
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C14
C9
DUT
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C3
C4
C6
0.215″ x 0.065″ Microstrip
0.221″ x 0.065″ Microstrip
0.500″ x 0.100″ Microstrip
0.460″ x 0.270″ Microstrip
0.040″ x 0.270″ Microstrip
0.280″ x 0.270″ x 0.530″ Taper
0.087″ x 0.525″ Microstrip
0.435″ x 0.525″ Microstrip
0.057″ x 0.525″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.095″ x 0.065″ Microstrip
0.800″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
0.325″ x 0.065″ Microstrip
Taconic RF - 35 0.030″, εr = 3.5
Figure 1. MRF6S9045NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9045NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair Rite
B2
Ferrite Bead
2743021447
Fair Rite
C1, C7, C10, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C4, C12
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
15 pF Chip Capacitor
ATC100B150JT500XT
ATC
C5, C6
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C8, C9
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C11
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
C13
0.6- 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
Kemet
C18
220 μF, 50 V Electrolytic Capacitor
EMVY500ADA221MJA0G
Nippon Chemi - Con
L1, L2
12.5 nH Inductor
A04T- 5
Coilcraft
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
ARCHIVE INFORMATION
Z1
C1
ARCHIVE INFORMATION
+
R3
+
RF
INPUT
C10
L2
VSUPPLY
+
MRF6S9045NR1 MRF6S9045NBR1
4
RF Device Data
Freescale Semiconductor
C15
R2
C18
R3
R1
VGG
VDD
B1
C16 C17
B2
C7
C10
L2
C5
L1
C4
ARCHIVE INFORMATION
C3
C6
C14
C9
C11
C13
C12
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9045NR1(NBR1) Test Circuit Component Layout
ARCHIVE INFORMATION
C1
CUT OUT AREA
C8
C2
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
5
32
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
22.2
31
−45
22
21.8
−50
ACPR
21.6
−55
IRL
21.4
21.2
−60
−65
ALT1
21
850
−70
860
870
880
890
900
−5
−10
−15
−20
−25
−30
910
f, FREQUENCY (MHz)
ηD
22.4
46
Gps, POWER GAIN (dB)
22.2
22
21.8
47
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
21.6
45
−40
ACPR
21.4
−45
IRL
21.2
21
20.8
850
−50
ALT1
−55
−60
860
870
880
890
−5
−35
900
−10
−15
−20
−25
−30
910
IRL, INPUT RETURN LOSS (dB)
48
Gps
ACPR (dBc), ALT1 (dBc)
22.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg.
24
−10
23
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 520 mA
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
33
ARCHIVE INFORMATION
Gps, POWER GAIN (dB)
22.4
34
ηD
22.6
IRL, INPUT RETURN LOSS (dB)
Gps
22.8
ACPR (dBc), ALT1 (dBc)
35
23
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
475 mA
350 mA
22
275 mA
21
175 mA
20
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−30
IDQ = 175 mA
−40
275 mA
350 mA
−50
520 mA
−60
475 mA
−70
19
1
10
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9045NR1 MRF6S9045NBR1
6
RF Device Data
Freescale Semiconductor
0
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
3rd Order
−50
5th Order
−60
−70
7th Order
−80
10
1
−10
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 350 mA
f1 = 880 MHz, f2 = 880.1 MHz, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
3rd Order
−30
−40
5th Order
−50
7th Order
−60
−70
0.05 0.1
100
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
54
Pout, OUTPUT POWER (dBm)
53
Ideal
P3dB = 48.6 dBm (72.44 W)
52
51
50
P1dB = 48.2 dBm (66.07 W)
49
Actual
48
47
VDD = 28 Vdc, IDQ = 350 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 880 MHz
46
45
44
23
24
25
26
27
28
29
30
31
32
33
Pin, INPUT POWER (dBm)
60
ηD
VDD = 28 Vdc, IDQ = 350 mA
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
25_C
ALT1
50
40
85_C
−25
25_C
−35
−30_C
25_C
−45
85_C
30
−55
Gps
TC = 25_C
−30_C
20
−65
ACPR
10
−75
0
1
10
−85
50
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
100
ARCHIVE INFORMATION
VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz
f2 = 880.1 MHz, Two−Tone Measurements
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
24
TC = −30_C
70
25_C
60
22
85_C
25_C
50
85_C
20
40
19
30
18
20
ηD
VDD = 28 Vdc
IDQ = 350 mA
f = 880 MHz
17
16
ARCHIVE INFORMATION
1
10
0
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
23.5
23
22.5
22
21.5
21
20.5
20
19.5
32 V
28 V
19
18.5
18
17.5
VDD = 24 V
0
10
20
30
40
50
60
IDQ = 350 mA
f = 880 MHz
70
80
90
100
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MTTF (HOURS)
108
107
ARCHIVE INFORMATION
21
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
23
80
−30_C
Gps
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9045NR1 MRF6S9045NBR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−70
−80
−90
0.0001
ARCHIVE INFORMATION
−60
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . .
............
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
.... .
...................
.........
..........
.....
.........
. .............
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
..........
...
......
........
......
.
.
..........
.
.
.
.
.
.
.
.
.
.
............. .
.........
.
.
.
.
..
.
.
..
.
.
.
.
.
..
....
.
−ACPR in 30 kHz
+ACPR in 30 kHz .................
........
.. ............
.
.
............
...
................
.
.
.
.
.
.
Integrated BW
Integrated BW
..
.....
.............
........
......
..........
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
3.6
ARCHIVE INFORMATION
100
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
9
f = 910 MHz
f = 850 MHz
Zsource
Zload
f = 910 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.42 + j0.30
3.05 + j1.27
865
0.42 + j0.44
3.16 + j1.33
880
0.45 + j0.60
3.31 + j1.33
895
0.48 + j0.74
3.43 + j1.20
910
0.50 + j0.85
3.35 + j1.05
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 5 Ω
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9045NR1 MRF6S9045NBR1
10
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
11
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MRF6S9045NR1 MRF6S9045NBR1
12
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
13
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MRF6S9045NR1 MRF6S9045NBR1
14
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MRF6S9045NR1 MRF6S9045NBR1
RF Device Data
Freescale Semiconductor
15
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MRF6S9045NR1 MRF6S9045NBR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
4
Aug. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
• Listed MRF6S9045NBR1 as no longer manufactured, p. 1
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View
Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC
Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3.
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
• Updated Part Numbers in Table 6 Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 6
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 8
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
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• Added Product Documentation and Revision History, p. 17
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Document Number: MRF6S9045N
Rev. 4, 8/2008
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RF Device Data
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