Freescale Semiconductor
Technical Data
Document Number: MRF6S9125N
Rev. 5, 8/2008
MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device
Migration PCN12895 for more details.
RF Power Field Effect Transistors
MRF6S9125NR1
MRF6S9125NBR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ =
950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 960 MHz), IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or
921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
125 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts
CW Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
865 - 960 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
Unit
°C/W
0.44
0.45
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
ARCHIVE INFORMATION
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
VGS(Q)
2
2.89
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
VDS(on)
0.05
0.23
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
60
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (3)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR
= 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
19
20.2
24
dB
Drain Efficiency
ηD
29
31
—
%
ACPR
—
- 47.1
- 45
dBc
IRL
—
- 16
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
ARCHIVE INFORMATION
Table 4. Moisture Sensitivity Level
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally input matched.
(continued)
MRF6S9125NR1 MRF6S9125NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA,
Pout = 60 W Avg., 921 - 960 MHz, EDGE Modulation
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
40
—
%
Error Vector Magnitude
EVM
—
1.8
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
62
—
%
IRL
—
- 12
—
dB
P1dB
—
125
—
W
Input Return Loss
Pout @ 1 dB Compression Point, CW
(f = 880 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W,
921- 960 MHz
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
3
R1
VBIAS
C10
RF
INPUT
C9
+
+
C8
C7
C18
R2
C6
Z2
Z3
Z4
Z5
Z6
Z9
C4
Z7
C21
C22
Z10
Z11
C11
C12
Z12
Z13
Z14
Z15
Z16
C13
C14
C15
C16
C23
RF
Z17 OUTPUT
C17
DUT
C3
C2
ARCHIVE INFORMATION
C20
Z8
C1
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
+
L2
L1
Z1
C19
+
C5
0.200″ x 0.080″ Microstrip
1.060″ x 0.080″ Microstrip
0.382″ x 0.220″ Microstrip
0.108″ x 0.220″ Microstrip
0.200″ x 0.420″ x 0.620″ Taper
0.028″ x 0.620″ Microstrip
0.236″ x 0.620″ Microstrip
0.050″ x 0.620″ Microstrip
0.238″ x 0.620″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057″ x 0.620″ Microstrip
0.119″ x 0.620″ Microstrip
0.450″ x 0.220″ Microstrip
0.061″ x 0.220″ Microstrip
0.078″ x 0.220″ Microstrip
0.692″ x 0.080″ Microstrip
0.368″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
20 pF Chip Capacitor
ATC100B200FT500XT
ATC
C2
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C3, C15
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
11 pF Chip Capacitors
ATC100B110FT500XT
ATC
C6, C18, C19
0.56 μF, 50 V Chip Capacitors
C1825C564J5RAC
Kemet
C7, C8
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C9, C23
47 pF Chip Capacitors
ATC700B470FT500XT
ATC
C10
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB- 1017- RF
Multicomp
C11, C12
12 pF Chip Capacitors
ATC100B120FT500XT
ATC
C13, C14
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C16
0.3 pF Chip Capacitor
ATC700B0R3BT500XT
ATC
C17
39 pF Chip Capacitor
ATC700B390FT500XT
ATC
C20, C21
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C22
470 μF, 63 V Electrolytic Capacitor
ESME630ELL471MK25S
United Chemi - Con
L1
7.15 nH Inductor
1606- 7J
CoilCraft
L2
8.0 nH Inductor
A03T
CoilCraft
R1
15 Ω, 1/3 W Chip Resistor
CRCW121015R0FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065603FKEA
Vishay
ARCHIVE INFORMATION
+
VSUPPLY
+
MRF6S9125NR1 MRF6S9125NBR1
4
RF Device Data
Freescale Semiconductor
C20 C21
C8 C7
C22
C9
C10
C6
R2
C4
R1
C23
C18
C11
C14
C1
C17
C2
C5
C3
CUT OUT AREA
L2
L1
ARCHIVE INFORMATION
VDD
C19
C13
C15
C16
C12
900 MHz
TO272 WB
Rev. 0
Figure 2. MRF6S9125NR1(NBR1) Test Circuit Component Layout
ARCHIVE INFORMATION
VGG
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
5
ηD
Gps, POWER GAIN (dB)
20
30
VDD = 28 Vdc, Pout = 27 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
19.8
19.5
28
−30
IRL
19.3
ACPR
19
18.8
−40
−50
−60
ALT1
−70
910
850
860
870
880
900
890
−10
−15
−20
−25
f, FREQUENCY (MHz)
48
Gps, POWER GAIN (dB)
19.4
19.2
ηD
44
VDD = 28 Vdc, Pout = 62.5 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
19
18.8
40
−30
ACPR
18.6
IRL
18.4
−50
ALT1
18.2
18
850
860
870
880
−40
890
−60
−70
910
900
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
52
Gps
ACPR (dBc), ALT1 (dBc)
19.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg.
22
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1475 mA
21
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
18.5
−5
ARCHIVE INFORMATION
32
Gps
IRL, INPUT RETURN LOSS (dB)
20.3
ACPR (dBc), ALT1 (dBc)
34
20.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
1187 mA
20
950 mA
712 mA
19
475 mA
18
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
IDQ = 1425 mA
−30
712 mA
475 mA
−40
−50
1187 mA
950 mA
−60
16
1
10
100
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9125NR1 MRF6S9125NBR1
6
RF Device Data
Freescale Semiconductor
0
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
10
1
100
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
1
0.1
300
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
Pout, OUTPUT POWER (dBm)
Ideal
P3dB = 52.4 dBm (172.5 W)
55
54
P1dB = 51.5 dBm (139.3 W)
53
Actual
52
51
50
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
49
48
28
29
30
31
32
33
34
36
35
Pin, INPUT POWER (dBm)
50
VDD = 28 Vdc, IDQ = 950 mA
f = 880 MHz, N−CDMA IS−95 (Pilot
40 Sync, Paging, Traffic Codes 8
Through 13)
−30
TC = −30_C
25_C
ALT1 −40
ηD
85_C
30
−50
−30_C
25_C
85_C
Gps
20
25_C
ACPR
25_C
10
−30_C
−70
85_C
0
0.1
1
−60
10
100
−80
200
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
−10
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
22
TC = −30_C
25_C
40
85_C
19
ηD
18
30
Gps
17
25_C
16
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
85_C
15
1
100
10
20
20
19
18
32 V
28 V
VDD = 24 V
17
10
IDQ = 950 mA
f = 880 MHz
0
200
16
50
0
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
250
ARCHIVE INFORMATION
50
Gps, POWER GAIN (dB)
20
60
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
21
ARCHIVE INFORMATION
21
70
−30_C
MRF6S9125NR1 MRF6S9125NBR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−70
−80
−90
0.0001
ARCHIVE INFORMATION
−60
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . .
............
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
.... .
...................
.........
..........
.....
.........
. .............
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
..........
...
......
........
......
.
.
..........
.
.
.
.
.
.
.
.
.
.
............. .
.........
.
.
.
.
..
.
.
..
.
.
.
.
.
..
....
.
−ACPR in 30 kHz
+ACPR in 30 kHz .................
........
.. ............
.
.
............
...
................
.
.
.
.
.
.
Integrated BW
Integrated BW
..
.....
.............
........
......
..........
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
3.6
ARCHIVE INFORMATION
100
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
9
f = 900 MHz
Zload
f = 860 MHz
Zsource
f = 900 MHz
f = 860 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
860
0.62 - j2.13
1.48 - j0.14
865
0.64 - j2.31
1.56 - j0.09
870
0.62 - j2.45
1.66 - j0.02
875
0.59 - j2.43
1.73 + j0.04
880
0.57 - j2.42
1.74 + j0.11
885
0.54 - j2.36
1.68 + j0.19
890
0.57 - j2.18
1.61 + j0.25
895
0.58 - j1.94
1.52 + j0.33
900
0.59 - j1.86
1.48 + j0.37
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 5 Ω
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9125NR1 MRF6S9125NBR1
10
RF Device Data
Freescale Semiconductor
EDGE CHARACTERIZATION
L1
VBIAS
+
+
C21
C1
C2
C16
Z8
Z1
Z2
Z3
Z4
Z5
C10 Z9
C19
C20
Z12
Z10 Z11
Z6
Z13
Z14
C13
C14
C7
C6
RF
OUTPUT
Z15
C15
C9
C5
ARCHIVE INFORMATION
C18
C8 Z7
C4
Z1, Z15
Z2
Z3
Z4
Z5
Z6
Z7, Z8
+
L2
C3
R1
RF
INPUT
C17
+
C11
C12
DUT
0.150″ x 0.080″ Microstrip
1.050″ x 0.080″ Microstrip
0.330″ x 0.220″ Microstrip
0.220″ x 0.100″ x 0.420″ Taper
0.420″ x 0.100″ x 0.620″ Taper
0.200″ x 0.620″ Microstrip
0.040″ x 0.620″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.620″ x 0.100″ x 0.420″ Taper
0.420″ x 0.100″ x 0.220″ Taper
0.325″ x 0.220″ Microstrip
0.040″ x 0.220″ Microstrip
0.475″ x 0.080″ Microstrip
0.400″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 17. MRF6S9125NR1(NBR1) Test Circuit Schematic
Table 7. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C3, C16, C17
0.56 μF, 50 V Chip Capacitors
C1825C564J5GAC
Kemet
C4
20 pF Chip Capacitor
ATC100B200FT500XT
ATC
C5, C7, C8
6.2 pF Chip Capacitors
ATC100B6R2BT500XT
ATC
C6, C13
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson Dielectrics
C9, C10
11 pF Chip Capacitors
ATC100B110FT500XT
ATC
C11
5.1 pF Chip Capacitor
ATC100B5R1BT500XT
ATC
C12
4.7 pF Chip Capacitor
ATC100B4R7BT500XT
ATC
C14
0.3 pF Chip Capacitor
ATC700B0R3BT500XT
ATC
C15
39 pF Chip Capacitor
ATC700B390FT500XT
ATC
C18, C19
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C20
470 μF, 63 V Electrolytic Capacitor
ESME630ELL471MK25S
United Chemi - Con
C21
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB- 1017- RF
Multicomp
L1
7.15 nH Inductor
1606- 7
Coilcraft
L2
8 nH Inductor
A03T- 5
Coilcraft
R1
15 Ω, 1/4 W Chip Resistor
CRCW120615R0FKEA
Vishay
ARCHIVE INFORMATION
+
VSUPPLY
+
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
11
EDGE CHARACTERIZATION
C1
C21
C3
C2
C17
C18 C19
C20
L1
C16
R1
C12
C10
C8
C7
C6
C11
C9
C14
C13
Figure 18. MRF6S9125NR1(NBR1) Test Circuit Component Layout
900 MHz
TO−272 WB
Rev. 2
C15
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C5
CUT OUT AREA
L2
C4
MRF6S9125NR1 MRF6S9125NBR1
12
RF Device Data
Freescale Semiconductor
EDGE CHARACTERIZATION
15
4
Pout = 70 W Avg.
3.5
3
2.5
60 W Avg.
2
1.5
1
20 W Avg.
0.5
910
920
930
940
950
960
970
980
60
9
45
ηD
6
30
3
15
0
1
990
0
300
100
10
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. EVM versus Frequency
Figure 20. EVM and Drain Efficiency versus
Output Power
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
0
900
12
VDD = 28 Vdc, IDQ = 700 mA
f = 943 MHz, EDGE Modulation
−52.5
ARCHIVE INFORMATION
VDD = 28 Vdc
IDQ = 700 mA
ηD, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% ms)
4.5
75
TC = 25_C
EVM
VDD = 28 Vdc
IDQ = 700 mA
f = 943 MHz
EDGE Modulation
Pout = 70 W Avg.
SR @ 400 kHz
−60
60 W Avg.
20 W Avg.
−67.5
70 W Avg.
SR @ 600 kHz
60 W Avg.
−75
20 W Avg.
−82.5
910
900
920
930
940
950
960
970
980
f, FREQUENCY (MHz)
Figure 21. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−45
−53
VDD = 28 Vdc
IDQ = 700 mA
f = 943 MHz
EDGE Modulation
−48
−51
−54
SPECTRAL REGROWTH @ 600 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz (dBc)
ARCHIVE INFORMATION
EVM, ERROR VECTOR MAGNITUDE (% ms)
5
TC = 25_C
−57
−60
−63
−66
−69
−72
VDD = 28 Vdc
IDQ = 700 mA
f = 943 MHz
EDGE Modulation
−56
−59
−62
−65
TC = 25_C
−68
−71
−74
−77
−80
−83
−75
0
22.5
45
67.5
90
112.5
135
0
22.5
45
67.5
90
112.5
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 22. Spectral Regrowth at 400 kHz
versus Output Power
Figure 23. Spectral Regrowth at 600 kHz
versus Output Power
135
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
13
EDGE CHARACTERIZATION TEST SIGNAL
−10
−20
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−30
−40
(dB)
−50
−60
−70
−80
400 kHz
400 kHz
600 kHz
600 kHz
−90
−100
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Center 943 MHz
200 kHz
Figure 24. EDGE Spectrum
Span 2 MHz
ARCHIVE INFORMATION
−110
MRF6S9125NR1 MRF6S9125NBR1
14
RF Device Data
Freescale Semiconductor
f = 980 MHz
Zload
f = 900 MHz
Zo = 5 Ω
Zsource
f = 900 MHz
VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg.
f
MHz
Zsource
W
Zload
W
900
1.04 - j2.65
1.66 - j0.56
905
1.04 - j2.60
1.66 - j0.50
910
1.03 - j2.55
1.67 - j0.43
915
1.02 - j2.51
1.68 - j0.37
920
1.01 - j2.46
1.68 - j0.31
925
1.01 - j2.41
1.69 - j0.24
930
1.00 - j2.36
1.70 - j0.18
935
0.98 - j2.32
1.70 - j0.12
940
0.97 - j2.27
1.71 - j0.05
945
0.96 - j2.22
1.72 - j0.00
950
0.95 - j2.17
1.73 + j0.07
955
0.94 - j2.12
1.74 + j0.14
960
0.94 - j2.08
1.76 + j0.20
965
0.93 - j2.03
1.77 + j0.26
970
0.93 - j1.99
1.79 + j0.32
975
0.92 - j1.94
1.80 + j0.39
980
0.92 - j1.90
1.82 + j0.45
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
ARCHIVE INFORMATION
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f = 980 MHz
load
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 25. Series Equivalent Source and Load Impedance for EDGE Characterization Tests
MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
15
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PACKAGE DIMENSIONS
MRF6S9125NR1 MRF6S9125NBR1
16
RF Device Data
Freescale Semiconductor
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RF Device Data
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MRF6S9125NR1 MRF6S9125NBR1
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RF Device Data
Freescale Semiconductor
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MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
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MRF6S9125NR1 MRF6S9125NBR1
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RF Device Data
Freescale Semiconductor
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MRF6S9125NR1 MRF6S9125NBR1
RF Device Data
Freescale Semiconductor
21
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
5
Aug. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Figs. 1, 17, Test Circuit Schematic,
p. 4, 11
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant
part numbers, p. 4, 11
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, p. 7
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 8
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 16 - 18. Added pin numbers 1 through
4 on Sheet 1.
• Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 19 - 21. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 22
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The following table summarizes revisions to this document.
MRF6S9125NR1 MRF6S9125NBR1
22
RF Device Data
Freescale Semiconductor
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MRF6S9125NR1 MRF6S9125NBR1
Document
Document
Number:
Number:
MRF6S9125N
MRF6S9125N
RF
Device
Data
Rev. 5,
Rev.
8/2008
5, 8/2008
Freescale
Semiconductor
23
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