MRF7P20040HSR5

Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 32 Volts, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 2025 MHz 18.2 42.6 7.3 --34.8 2010--2025 MHz, 10 W AVG., 32 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 50 Watts CW (1) Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. CASE 465M--01, STYLE 1 NI--780--4 MRF7P20040HR3 CASE 465H--02, STYLE 1 NI--780S--4 MRF7P20040HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (2,3) TJ 225 °C CW 42.4 0.17 W W/°C CW Operation @ TC = 25°C Derate above 25°C RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 78°C, 10 W CW, 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz Case Temperature 82°C, 40 W CW(1), 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2017.5 MHz RθJC Value (3,4) 2.11 1.50 Unit °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor MRF7P20040HR3 MRF7P20040HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 32 Vdc, IDA = 150 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.325 Adc) VDS(on) 0.1 0.24 0.3 Vdc Characteristic Off Characteristics (1) On Characteristics (1) Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16 18.2 21 dB Drain Efficiency ηD 39 42.6 — % PAR 6.9 7.3 — dB ACPR — --34.8 --30 dBc IRL — --17.8 --10 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, 2010--2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 35 — W Pout @ 3 dB Compression Point, CW (4) P3dB — 50 — W — 8 — IMD Symmetry @ 15 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 70 — MHz Gain Flatness in 15 MHz Bandwidth @ Pout = 10 W Avg. GF — 0.04 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.013 — dB/°C ∆P1dB — 0.006 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (4) 1. 2. 3. 4. MHz Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF7P20040HR3 MRF7P20040HSR3 2 RF Device Data Freescale Semiconductor VGGA VDSA C13 C11 R2 C15 C17 C7 C5 C1 C3 C2 C4 C6 CUT OUT AREA R1 C C9 P C10 C8 C12 C14 C19 C16 C18 R3 MRF7P20040H/HS Rev. 1 VDSB VGGB Figure 2. MRF7P20040HR3(HSR3) Test Circuit Component Layout Table 5. MRF7P20040HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C9, C10 12 pF Chip Capacitors ATC600F120FT250XT ATC C3, C4 2.4 pF Chip Capacitors ATC600F2R4AT250XT ATC C5, C6 27 pF Chip Capacitors ATC600F270FT250XT ATC C7, C8 1.1 pF Chip Capacitors ATC600F1R1AT250XT ATC C11, C12 12 pF Chip Capacitors ATC100B120FT1500XT ATC C13, C14 2.2 μF, 50 V Chip Capacitors C3225X7R1H225KT TDK C15, C16 4.7 μF, 50 V Chip Capacitors GRM43ER61H475MA88L Murata C17, C18 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C19 0.8 pF Chip Capacitor ATC600F0R8AT250XT ATC R1 100 Ω, 1/4 W Chip Resistor CRCW12061000FKEA Vishay R2, R3 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay PCB 0.020″, εr = 3.5 RO4350B Rogers MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 3 Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF7P20040HR3 MRF7P20040HSR3 4 RF Device Data Freescale Semiconductor 17 42 40 ηD 16.5 44 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 16 ACPR 15.5 15 14 13.5 1880 1920 --14 --30 --16 --34 --36 IRL 1900 --28 --32 PARC 14.5 38 1940 1960 1980 2000 2020 --38 2040 --18 --20 --22 --24 --1.8 --2 --2.2 --2.4 --2.6 PARC (dB) Gps, POWER GAIN (dB) 17.5 Gps IRL, INPUT RETURN LOSS (dB) 46 VDD = 32 Vdc, Pout = 10 W (Avg.) IDQA = 150 mA, VGSB = 1.5 Vdc 18 ACPR (dBc) 18.5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --2.8 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 10 Watts Avg. --10 VDD = 32 Vdc, Pout = 15 W (PEP), IDQA = 150 mA VGSB = 1.5 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2017.5 MHz --20 IM3--L --30 IM3--U --40 IM5--U IM5--L --50 IM7--U --60 IM7--L 1 10 100 TWO--TONE SPACING (MHz) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing 17 16.5 16 15.5 ηD Gps 0 --2 dB = 7.64 W --1 --1 dB = 5.48 W --5 --3 dB = 10.07 W --28 32 VDD = 32 Vdc, IDQA = 150 mA PARC VGSB = 1.5 Vdc, f = 2017.5 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 3 44 36 --3 --4 --26 40 ACPR --2 48 6 9 12 --30 --32 ACPR (dBc) 17.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 18 1 ηD, DRAIN EFFICIENCY (%) 18.5 --34 28 --36 24 --38 15 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 18.5 2017.5 MHz 2010 MHz 2017.5 MHz Gps, POWER GAIN (dB) 18 17.5 VDD = 32 Vdc, IDQA = 150 mA VGSB = 1.5 Vdc, Single--Carrier 17 W--CDMA, 3.84 MHz Channel 16.5 Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% 16 Probability on CCDF 15.5 15 2025 MHz --5 50 --10 40 ηD 35 2025 MHz 30 Gps 25 20 14 10 1 0 55 45 2017.5 MHz 2010 MHz ACPR 14.5 60 --15 --20 --25 --30 ACPR (dBc) f = 2010 MHz 2025 MHz ηD, DRAIN EFFICIENCY (%) 19 --35 --40 15 --45 10 --50 50 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power --4 20 --10 Gain 12 --16 8 --22 4 0 --4 1450 1575 1700 1825 --28 IRL VDD = 32 Vdc Pin = 0 dBm IDQA = 150 mA VGSB = 1.5 Vdc IRL (dB) GAIN (dB) 16 --34 1950 2075 2200 2325 --40 2450 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response MRF7P20040HR3 MRF7P20040HSR3 6 RF Device Data Freescale Semiconductor W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 2 4 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 12 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single--Carrier W--CDMA Spectrum MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 7 VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 1995 6.80 -- j13.11 14.67 + j4.09 2000 6.66 -- j13.03 14.87+ j3.82 2005 6.52 -- j12.93 15.08 + j3.58 2010 6.37 -- j12.85 15.27 + j3.29 2015 6.22 -- j12.78 15.45 + j3.00 2020 6.08 -- j12.69 15.62 + j2.77 2025 5.94 -- j12.60 15.80 + j2.44 2030 5.80 -- j12.49 15.95 + j2.14 2035 5.65 -- j12.40 16.08 + j1.82 Note: Measured with Peaking side open. Zload = Test circuit impedance as measured from drain to ground. Zsource = Test circuit impedance as measured from gate to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 11. Series Equivalent Source and Load Impedance — Carrier Side VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 1995 8.45 -- j12.85 5.83 -- j10.09 2000 8.28 -- j12.79 5.57 -- j10.11 2005 8.11 -- j12.70 5.32 -- j10.08 2010 7.95 -- j12.63 5.06 -- j10.07 2015 7.79 -- j12.56 4.80 -- j10.06 2020 7.63 -- j12.48 4.55 -- j10.01 2025 7.50 -- j12.40 4.32 -- j9.96 2030 7.34 -- j12.32 4.06 -- j9.88 2035 7.19 -- j12.24 3.82 -- j9.81 Note: Measured with Carrier side open. Zload = Test circuit impedance as measured from drain to ground. Zsource = Test circuit impedance as measured from gate to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance — Peaking Side MRF7P20040HR3 MRF7P20040HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 32 Vdc, IDQA = 150 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle 49 Pout, OUTPUT POWER (dBm) 48 Ideal f = 2010 MHz 47 46 f = 2010 MHz 45 Actual 44 f = 2025 MHz 43 42 41 f = 2025 MHz 40 39 17 18 19 21 20 22 23 24 26 25 27 Pin, INPUT POWER (dBm) Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2010 26 44.1 31 44.9 2025 26 44.2 31 44.9 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 2010 P1dB 2.49 -- j18.56 15.82 -- j0.28 2025 P1dB 2.66 -- j19.78 15.78 + j0.52 Figure 13. Pulsed CW Output Power versus Input Power @ 32 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 9 VDD = 28 Vdc, IDQA = 150 mA Watts 1805 35 VDD = 28 Vdc, IDQA = 150 mA dBm Zsource Ω Zload Ω f MHz Max Eff. (1) % 45.4 2.2 -- j9.3 17.1 -- j7.9 1805 Max Pout f MHz (1) Zsource Ω Zload Ω 66.6 2.2 -- j9.3 17.6 + j9.5 70.1 2.3 -- j11.3 16.1 + j9.8 1880 35 45.5 2.3 -- j11.3 14.0 -- j4.2 1880 1930 35 45.5 2.4 -- j13.0 14.7 -- j5.9 1930 69.8 2.4 -- j13.0 14.2 + j8.9 2025 67.7 3.5 -- j17.3 13.8 + j6.2 2025 35 45.5 3.5 -- j17.3 15.5 -- j8.0 2110 34 45.3 3.8 -- j20.6 15.4 -- j9.3 2110 67.9 3.8 -- j20.6 11.5 + j3.9 14.4 -- j9.4 2200 70.3 5.6 -- j25.8 9.6 -- j0.6 2200 35 45.5 5.6 -- j25.8 (1) Maximum output power measurement reflects pulsed 3 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 14. Carrier Side Load Pull Performance — Maximum P3dB Tuning (1) Maximum efficiency measurement reflects pulsed 3 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 15. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF7P20040HR3 MRF7P20040HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 11 MRF7P20040HR3 MRF7P20040HSR3 12 RF Device Data Freescale Semiconductor MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 13 MRF7P20040HR3 MRF7P20040HSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF7P20040H and MRF7P20040HS parts will be available for 2 years after release of MRF7P20040H and MRF7P20040HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF7P20040H and MRF7P20040HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 June 2009 • Initial Release of Data Sheet 1 Aug. 2009 • Removed IQ Magnitude Clipping from Typical Performance bullet, p. 1 and Functional Test header, p. 2 • Electrical Characteristics, DC tests: updated footnote to indicate each side of device measured separately, p. 2 2 Dec. 2010 • Updated frequency in overview paragraph from “2010 to 2025 MHz” to “1800 to 2200 MHz” per expanded load pull characterization shown in Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB Tuning and Fig. 15, Carrier Side Load Pull Performance — Maximum Efficiency Tuning, p. 1 • Added CW Operation information to Maximum Ratings table, p. 1 • In Table 2, Thermal Characteristics, Pout = 10 W CW thermal resistance values changed from IDQA 2.5/VGSB 2.9 to 2.11_C/W and Pout = 40 W CW thermal resistance value changed from 2.3 to 1.50_C/W. Thermal values now reflect the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 1 • Added Fig. 14, Carrier Side Load Pull Performance — Maximum P3dB Tuning and Fig. 15, Carrier Side Load Pull Performance — Maximum Efficiency Tuning to show load pull data for expanded frequency range presented in p. 1 overview paragraph, p. 10 MRF7P20040HR3 MRF7P20040HSR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF7P20040HR3 MRF7P20040HSR3 Document Number: MRF7P20040H Rev. 2, 12/2010 16 RF Device Data Freescale Semiconductor