MRF7S16150HR5

Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 25.4% Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.5 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW Output Power • Pout @ 1 dB Compression Point w 150 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1600- 1660 MHz, 32 W AVG., 28 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S16150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S16150HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 149 W CW Case Temperature 75°C, 32 W CW RθJC 0.34 0.37 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF7S16150HR3 MRF7S16150HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) IC (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 348 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.48 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.09 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 585 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 363 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 32 W Avg., f = 1600 MHz and f = 1660 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Gps 18.5 19.7 21.5 dB Drain Efficiency ηD 24 25.4 — % PAR 7.7 8.2 — dB ACPR - 58 - 47.5 - 45 dBc IRL — - 12.1 -7 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) MRF7S16150HR3 MRF7S16150HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 32 W Avg., f = 1600 MHz and f = 1660 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G @ Pout = 32 W Avg. Mask Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset dBc — — — — — - 27 - 36 - 41 - 59 - 62 — — — — — Relative Constellation Error @ Pout = 32 W Avg. (1) RCE — - 29.6 — dB Error Vector Magnitude (1) (Typical EVM Performance @ Pout = 32 W Avg. with OFDM 802.16d Signal Call) EVM — 3.3 — % rms Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 1600 - 1660 MHz Bandwidth Video Bandwidth @ 180 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz