MRF8S18120HR5

Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency Gps (dB) ηD (%) 1805 MHz 18.2 49.8 1840 MHz 18.6 51.4 1880 MHz 18.7 53.9 1805--1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg. Frequency Gps (dB) ηD (%) SR1 @ 400 kHz (dBc) SR2 @ 600 kHz (dBc) EVM (% rms) 1805 MHz 17.9 41.0 --64 --76 1.6 1840 MHz 18.2 41.9 --63 --76 1.7 1880 MHz 18.3 43.2 --61 --76 2.0 CASE 465--06, STYLE 1 NI--780 MRF8S18120HR3 CASE 465A--06, STYLE 1 NI--780S MRF8S18120HSR3 Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S18120HR3 MRF8S18120HSR3 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 79°C, 72 W CW, 28 Vdc, IDQ = 800 mA Case Temperature 79°C, 120 W CW, 28 Vdc, IDQ = 800 mA RθJC Unit °C/W 0.47 0.46 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 260 μAdc) VGS(th) 1.2 1.8 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test) VGS(Q) 1.8 2.6 3.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.3 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW, f = 1805 MHz Power Gain Gps 17 18.2 20 dB Drain Efficiency ηD 48 49.8 — % IRL — --11 --8 dB P1dB 112 — — W Input Return Loss Pout @ 1 dB Compression Point, CW Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW Frequency Gps (dB) ηD (%) IRL (dB) 1805 MHz 18.2 49.8 --11 1840 MHz 18.6 51.4 --15 1880 MHz 18.7 53.9 --12 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Part internally matched both on input and output. (continued) MRF8S18120HR3 MRF8S18120HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 1805--1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 120 — — 10 — W IMD Symmetry @ 94 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 35 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 72 W CW GF — 0.5 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.01 — dB/°C ∆P1dB — 0.004 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 46 W Avg., 1805--1880 MHz EDGE Modulation Frequency Gps (dB) ηD (%) SR1 @ 400 kHz (dBc) SR2 @ 600 kHz (dBc) EVM (% rms) 1805 MHz 17.9 41.0 --64 --76 1.6 1840 MHz 18.2 41.9 --63 --76 1.7 1880 MHz 18.3 43.2 --61 --76 2.0 MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 3 R2 C13 C9 C10 C3 C8 C4 C7 C11 C12 C6 C5 R1 C2 CUT OUT AREA C1 MRF8S18120 Rev. 2 Figure 1. MRF8S18120HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S18120HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 12 pF Chip Capacitors ATC100B120JT500XT ATC C3, C8 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C4 10 nF Chip Capacitor C1825C103K1GAC--TU Kemet C5 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C6, C9 2.2 μF, 100 V Chip Capacitors C3225X7R2A225KT TDK C7 47 μF, 16 V Tantalum Capacitor T491D476K016AT Kemet C10, C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C13 330 μF, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0JNEA Vishay R2 4.75 Ω, 1/4 W Chip Resistor CRCW12064R75FNEA Vishay PCB 0.030″, εr = 2.55 250GX--0300--55--22 Arlon MRF8S18120HR3 MRF8S18120HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 55 ηD 19 50 Gps 45 18 40 17 IRL 16 15 1760 1780 1800 1820 1840 1860 1880 1900 --5 --10 35 --15 30 1920 --20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 20 60 VDD = 28 Vdc, Pout = 72 W CW, IDQ = 800 mA ηD, DRAIN EFFICIENCY (%) 21 f, FREQUENCY (MHz) Figure 2. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 72 Watts CW 40 19 Gps 18 35 17 3 IRL 16 15 1760 2 EVM 1780 1800 1820 1840 1860 1880 1900 1 1920 --5 --10 --15 --20 IRL, INPUT RETURN LOSS (dB) 45 ηD ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20 50 VDD = 28 Vdc, Pout = 46 W Avg. IDQ = 800 mA, EDGE Modulation EVM, ERROR VECTOR MAGNITUDE (% rms) 21 f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 46 Watts Avg. 19 IM3--U --30 IM3--L --40 IM5--U IM5--L --50 Gps 45 17 1840 MHz 1880 MHz 16 10 100 14 30 1805 MHz 1 15 VDD = 28 Vdc IDQ = 800 mA ηD IM7--U --60 60 1805 MHz 15 IM7--L 1 1840 MHz 18 10 100 TWO--TONE SPACING (MHz) Pout, OUTPUT POWER (WATTS) CW Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing Figure 5. Power Gain and Drain Efficiency versus Output Power 300 ηD, DRAIN EFFICIENCY (%) --20 75 f = 1880 MHz VDD = 28 Vdc, Pout = 94 W (PEP) IDQ = 800 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) --10 0 MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Pout = 72 W Avg. 4 3 46 W Avg. 2 25 W Avg. 1 0 1800 1820 1840 1880 1860 --65 --70 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) Figure 6. EVM versus Frequency Figure 7. Spectral Regrowth at 400 kHz versus Output Power f = 1880 MHz --65 1840 MHz 1805 MHz --70 --75 --80 20 30 40 50 60 70 80 90 10 EVM, ERROR VECTOR MAGNITUDE (% rms) SPECTRAL REGROWTH @ 600 kHz (dBc) 1805 MHz --60 0 --60 10 1840 MHz --55 f, FREQUENCY (MHz) VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation 0 f = 1880 MHz --50 1900 --50 --55 VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation --45 75 VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation 8 100 60 f = 1880 MHz 6 45 1840 MHz 4 30 ηD 1805 MHz 2 EVM 15 1840 MHz 0 100 0 100 1 ηD, DRAIN EFFICIENCY (%) 5 --40 VDD = 28 Vdc, IDQ = 800 mA EDGE Modulation SPECTRAL REGROWTH @ 400 kHz (dBc) EVM, ERROR VECTOR MAGNITUDE (% rms) 6 10 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) Figure 8. Spectral Regrowth at 600 kHz versus Output Power Figure 9. EVM and Drain Efficiency versus Output Power 0 20 --5 10 --10 5 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 800 mA 0 1440 1540 1640 1740 1840 1940 IRL (dB) GAIN (dB) Gain 15 --15 2040 2140 2240 --20 2340 f, FREQUENCY (MHz) Figure 10. Broadband Frequency Response MRF8S18120HR3 MRF8S18120HSR3 6 RF Device Data Freescale Semiconductor GSM TEST SIGNAL --10 --20 Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz --30 --40 (dB) --50 --60 --70 --80 --90 400 kHz 400 kHz 600 kHz 600 kHz --100 --110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 11. EDGE Spectrum VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW f MHz Zsource Ω Zload Ω 1760 1.53 -- j1.94 2.32 -- j0.41 1780 1.53 -- j1.82 2.31 -- j0.51 1800 1.56 -- j1.90 2.31 -- j0.49 1820 1.56 -- j1.86 2.32 -- j0.40 1840 1.57 -- j1.75 2.33 -- j0.26 1860 1.51 -- j1.64 2.29 -- j0.12 1880 1.49 -- j1.58 2.29 -- j0.01 1900 1.49 -- j1.55 2.29 + j0.05 1920 1.48 -- j1.53 2.31 + j0.06 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 57 Pout, OUTPUT POWER (dBm) 56 Ideal f = 1840 MHz 55 f = 1840 MHz 54 53 52 51 f = 1800 MHz 50 49 f = 1800 MHz 48 47 46 f = 1880 MHz f = 1880 MHz Actual 28 29 30 31 32 33 35 34 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 1805 145 51.6 178 52.5 1840 141 51.5 178 52.5 1880 135 51.3 170 52.3 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 1805 P1dB 1.14 -- j4.65 1.54 -- j2.60 1840 P1dB 1.04 -- j4.88 1.49 -- j2.75 1880 P1dB 0.94 -- j4.59 1.50 -- j2.74 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V MRF8S18120HR3 MRF8S18120HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 9 MRF8S18120HR3 MRF8S18120HSR3 10 RF Device Data Freescale Semiconductor MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 11 MRF8S18120HR3 MRF8S18120HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2009 • Initial Release of Data Sheet 1 Oct. 2010 • Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of the device, p. 2 MRF8S18120HR3 MRF8S18120HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF8S18120HR3 MRF8S18120HSR3 Document Number: MRF8S18120H Rev. 1, 10/2010 14 RF Device Data Freescale Semiconductor