MRFE6S9130HSR5

Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9130HR3 MRFE6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9130HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9130HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +66 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 130 W CW Case Temperature 75°C, 27 W CW RθJC 0.45 0.51 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9130HR3 MRFE6S9130HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 2.1 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) VGS(Q) 2 2.9 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) — 0.22 0.5 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 66 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 18 19.2 21 dB Drain Efficiency ηD 29 30.5 — % ACPR — - 47.6 - 46 dBc IRL — - 29 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRFE6S9130HR3 MRFE6S9130HSR3 2 RF Device Data Freescale Semiconductor B2 + + L2 + C7 Z1 + C6 Z2 Z3 L1 Z4 Z5 C8 Z10 Z11 Z12 Z9 Z6 RF OUTPUT Z13 Z14 Z15 Z16 C4 Z8 Z7 VSUPPLY C15 C16 C17 C18 C19 C14 VBIAS RF INPUT + B1 Z17 C13 C10 C9 C11 C12 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6, Z11 0.383″ 1.250″ 0.190″ 0.127″ 0.173″ 0.200″ x 0.080″ x 0.080″ x 0.220″ x 0.220″ x 0.220″ x 0.220″ C3 DUT C5 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.620″ Taper Z7 Z8 Z9 Z10 Z12 Z13 0.220″ 0.077″ 0.146″ 0.152″ 0.184″ 0.261″ x 0.630″ x 0.630″ x 0.630″ x 0.630″ x 0.220″ x 0.220″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z14 Z15 Z16 Z17 PCB 0.045″ x 0.220″ Microstrip 0.755″ x 0.080″ Microstrip 0.496″ x 0.080″ Microstrip 0.384″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair Rite C1, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C2 8.2 pF Chip Capacitor ATC100B8R2BT500XT ATC C3, C11 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 12 pF Chip Capacitors ATC100B120JT500XT ATC C6 20 K pF Chip Capacitor ATC200B203KT50XT ATC C7, C16, C17, C18 10 μF, 35 V Tantalum Chip Capacitors T491D106K035AT Kemet C8, C9 10 pF Chip Capacitors ATC100B7R5JT500XT ATC C10 11 pF Chip Capacitor ATC100B110JT500XT ATC C12 0.6 - 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C15 0.56 μF, 50 V Chip Capacitor C1825C564J5GAC Kemet C19 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi - Con L1, L2 12.5 nH Inductors A04T - 5 Coilcraft MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 3 C19 B2 900 MHz Rev 02 C7 C6 C16 C17 C18 C15 B1 C4 C8 L1 C14 L2 C1 C2 C3 C5 CUT OUT AREA C10 C12 C9 C13 C11 Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout MRFE6S9130HR3 MRFE6S9130HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 32 Gps, POWER GAIN (dB) 19 30 Gps 18.5 VDD = 28 Vdc, Pout = 27 W (Avg.), IDQ = 950 mA N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 18 17.5 17 26 −20 −30 IRL 16.5 28 −40 ACPR 16 −50 ALT1 15.5 −60 15 820 840 860 880 900 920 940 960 −70 980 −5 −15 −25 −35 −45 −55 IRL, INPUT RETURN LOSS (dB) 19.5 ηD, DRAIN EFFICIENCY (%) 34 ηD ACPR (dBc), ALT1 (dBc) 20 f, FREQUENCY (MHz) ηD 41 38 35 −10 −20 −30 −40 VDD = 28 Vdc, Pout = 54 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync Paging, Traffic Codes 8 Through 13 16.5 16 15.5 IRL 15 14.5 14 ACPR 13.5 13 ALT1 820 840 860 880 900 920 940 960 −50 −60 −70 980 0 −5 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 50 47 44 Gps ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 19 18.5 18 17.5 17 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg. 21 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1400 mA Gps, POWER GAIN (dB) 20 1100 mA 19 950 mA 18 700 mA 17 500 mA 16 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 IDQ = 500 mA −30 700 mA 1400 mA −40 −50 1100 mA 950 mA −60 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 5 0 60 VDD = 28 Vdc, Pout = 130 W (PEP) IDQ = 950 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 IM3−L −30 −40 IM5−L IM3−U IM5−U IM7−U −50 P6dB = 52.95 dBm (197.24 W) 59 Pout, OUTPUT POWER (dBm) 58 Ideal 57 P3dB = 52.26 dBm (168.27 W) 56 55 P1dB = 51.15 dBm (130.31 W) 54 53 Actual 52 VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 880 MHz 51 IM7−L −60 1 50 10 31 60 32 33 34 35 36 37 38 39 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TWO−TONE SPACING (MHz) 60 −20 VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz N−CDMA IS−95, Pilot, Sync, Paging Traffic Codes 8 Through 13 50 −30 40 −40 ACPR 30 ηD −50 ALT1 TC = −30_C −60 20 Gps 85_C 10 −70 25_C 0 1 10 100 −80 200 40 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (WATTS) CW Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 21 70 25_C Gps TC = −30_C −30_C 60 25_C 19 85_C 85_C 18 40 17 30 16 15 14 1 50 20 VDD = 28 Vdc IDQ = 950 mA f = 880 MHz ηD 10 100 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20 10 0 400 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9130HR3 MRFE6S9130HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 20 18 MTTF (HOURS) Gps, POWER GAIN (dB) 19 17 32 V 16 28 V VDD = 24 V 15 107 106 IDQ = 950 mA f = 880 MHz 105 14 0 50 100 150 200 250 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 30.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .......................................... .................. . . . . ... .. .. ... .. .. . .. .. .. ... −ALT1 in 30 kHz +ALT1 in 30 kHz .. .. Integrated BW Integrated BW . . . . . . ... . .. . ... . . . . . ........... . . . . . ......... ................... .... . . . . . . . . . . . . . . ..... .... ............ .................. ......... .......... ... ....... ........... ........ . ........... ........ . . .. . . . . .. . ............... . .... . .. . . . . . . . .. .... . . ........... −ACPR in 30 kHz +ACPR in 30 kHz . . . . . . ... .. ........ . ............. . . . . . ... ............... Integrated BW Integrated BW .. ...... ..... ................. ........... ........ ....... ... −100 PEAK−TO−AVERAGE (dB) Figure 13. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 7 f = 910 MHz Zload f = 850 MHz Zo = 2 Ω f = 910 MHz Zsource f = 850 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz Zsource Ω Zload Ω 850 0.89 - j1.18 1.50 - j0.09 865 0.87 - j1.03 1.52 + j0.11 880 0.85 - j0.89 1.55 + j0.31 895 0.83 - j0.75 1.60 + j0.51 910 0.84 - j0.64 1.68 + j0.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRFE6S9130HR3 MRFE6S9130HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N R (INSULATOR) M T A M B M ccc M T A M M aaa M T A M ccc H B S (LID) M T A M B (LID) M (INSULATOR) B M C F E T A A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRFE6S9130HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRFE6S9130HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRFE6S9130HR3 MRFE6S9130HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 April 2007 • Initial Release of Data Sheet 1 Dec. 2008 • Updated Full Frequency Band in Typical Performance bullet to f = 880 MHz to match actual production test, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 MRFE6S9130HR3 MRFE6S9130HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2008. All rights reserved. MRFE6S9130HR3 MRFE6S9130HSR3 Document Number: RF Device Data MRFE6S9130H Rev. 1, 12/2008 Freescale Semiconductor 11