MRFG35002N6R5

Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Drain Efficiency — 27% ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • 1.5 Watts P1dB @ 3550 MHz, CW • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant. • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS 8 Vdc Gate - Source Voltage VGS -5 Vdc RF Input Power Pin 22 dBm Tstg - 65 to +150 °C Tch 175 °C TC - 20 to +85 °C Symbol Value (2) Unit RθJC 15.2 °C/W Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C ARCHIVE INFORMATION ARCHIVE INFORMATION RF Power Field Effect Transistor 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFG35002N6T1 1 ARCHIVE INFORMATION Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 1.7 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS — < 1.0 100 μAdc Off State Drain Current (VDS = 6 Vdc, VGS = - 2.5 Vdc) IDSO — — 600 μAdc Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) IDSX — < 1.0 9 mAdc Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) VGS(th) - 1.2 - 0.9 - 0.7 Vdc Quiescent Gate Voltage (VDS = 6 Vdc, ID = 65 mA) VGS(Q) - 1.1 - 0.8 - 0.6 Vdc Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158.5 mW Avg., f = 3550 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 8.5 10 — dB Drain Efficiency hD 23 27 — % ACPR — - 41 - 38 dBc — W Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB — 1.5 ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRFG35002N6T1 2 RF Device Data Freescale Semiconductor VBIAS VSUPPLY C8 C13 C12 C11 C10 C18 C9 C17 C16 C15 C14 C7 C19 R1 C20 C6 C5 C22 RF INPUT C21 Z6 Z1 Z2 Z3 Z4 Z5 RF OUTPUT Z11 Z7 Z8 Z9 Z10 Z12 Z13 C3 Z1, Z14 Z2 Z3 Z4 Z5 Z6, Z11 Z7 C4 0.044″ 0.044″ 0.044″ 0.468″ 0.468″ 0.015″ 0.031″ C23 x 0.125″ Microstrip x 0.500″ Microstrip x 0.052″ Microstrip x 0.010″ Microstrip x 0.356″ Microstrip x 0.549″ Microstrip x 0.259″ Microstrip Z8 Z9 Z10 Z12 Z13 PCB 0.420″ x 0.150″ Microstrip 0.150″ x 0.068″ Microstrip 0.290″ x 0.183″ Microstrip 0.044″ x 0.115″ Microstrip 0.044″ x 0.894″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. MRFG35002N6 Test Circuit Schematic Table 5. MRFG35002N6 Test Circuit Component Designations and Values Part Description C1, C24 13 pF Chip Capacitors C2 Not Used C3 Part Number Manufacturer 100A130JP150X ATC 1.2 pF Chip Capacitor 08051J1R2BBT AVX C4 0.7 pF Chip Capacitor 08051J0R7BBT AVX C5, C6, C21, C22 5.6 pF Chip Capacitors 08051J6R8BBT AVX C7, C20 10 pF Chip Capacitors 100A100JP150X ATC C8, C19 100 pF Chip Capacitors 100A101JP150X ATC C9, C18 100 pF Chip Capacitors 100B101JP500X ATC C10, C17 1000 pF Chip Capacitors 100B102JP50X ATC C11, C16 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C12, C15 39K pF Chip Capacitors 200B393KP50X ATC C13, C14 10 μF Chip Capacitors GRM55DR61H106KA88B Kemet C23 0.2 pF Chip Capacitor 08051J0R2BBT AVX R1 100 Ω, 1/4 W Chip Resistor ARCHIVE INFORMATION C24 C1 ARCHIVE INFORMATION Z14 MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C18 C9 C17 C16 C15 C14 C8 C7 R1 C5 C6 C19 C20 C21 C2 C1 C3 C24 C23 C4 MRFG35002M6, Rev. 2 3.5 GHz - 3.6 GHz Figure 2. MRFG35002N6 Test Circuit Component Layout ARCHIVE INFORMATION ARCHIVE INFORMATION C22 MRFG35002N6T1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS GT, TRANSDUCER GAIN (dB) VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_ 12 GT 10 40 30 20 8 10 6 ηD, DRAIN EFFICIENCY (%) 50 14 0 5 10 15 20 25 0 30 Pout, OUTPUT POWER (dBm) Figure 3. Transducer Gain and Drain Efficiency versus Output Power −20 0 VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_ −30 IRL −40 −5 −10 −50 −15 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ARCHIVE INFORMATION 4 ACPR −60 0 6 12 18 24 −20 30 Pout, OUTPUT POWER (dBm) Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. ARCHIVE INFORMATION ηD MRFG35002N6T1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 50 VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps, POWER GAIN (dB) 12 10 40 30 Gps 8 20 6 10 ηD, DRAIN EFFICIENCY (%) 14 ARCHIVE INFORMATION 0 6 12 18 24 0 30 Pout, OUTPUT POWER (dBm) −20 −5 VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −10 IRL −40 −15 −50 −20 ACPR −60 0 6 12 18 24 −25 30 Pout, OUTPUT POWER (dBm) Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data is generated from the test circuit shown. IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ARCHIVE INFORMATION ηD 4 MRFG35002N6T1 6 RF Device Data Freescale Semiconductor S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.50 0.906 - 173.61 6.43 84.54 0.0316 1.5 0.713 - 174.6 0.55 0.906 - 175.37 5.86 82.68 0.0319 0.8 0.714 - 175.9 0.60 0.906 - 176.93 5.38 80.94 0.0320 - 0.6 0.714 - 177.3 0.65 0.906 - 178.40 4.98 79.21 0.0317 - 1.7 0.713 - 178.6 0.70 0.908 - 179.79 4.65 77.51 0.0320 - 2.8 0.713 - 179.9 0.75 0.907 179.01 4.34 75.94 0.0320 - 3.3 0.712 178.9 0.80 0.907 177.87 4.08 74.33 0.0321 - 4.3 0.713 177.6 0.85 0.907 176.78 3.85 72.72 0.0323 - 5.5 0.713 176.4 0.90 0.908 175.82 3.65 71.14 0.0324 - 6.3 0.713 175.1 0.95 0.908 174.92 3.46 69.56 0.0322 - 6.7 0.712 173.7 1.00 0.907 174.04 3.30 68.00 0.0322 - 7.7 0.711 172.4 1.05 0.908 173.19 3.15 66.45 0.0324 - 8.9 0.712 171.1 1.10 0.909 172.44 3.02 64.84 0.0325 - 9.2 0.711 169.7 1.15 0.909 171.49 2.90 63.23 0.0327 - 10.6 0.711 168.2 1.20 0.907 170.67 2.79 61.71 0.0327 - 11.6 0.711 167.0 1.25 0.907 169.76 2.68 60.14 0.0328 - 12.0 0.709 165.7 1.30 0.907 168.81 2.59 58.62 0.0328 - 13.3 0.709 164.5 1.35 0.911 167.94 2.50 57.03 0.0330 - 14.1 0.713 163.5 1.40 0.904 167.04 2.43 55.47 0.0334 - 14.8 0.706 162.3 1.45 0.906 165.86 2.36 53.91 0.0334 - 16.2 0.707 161.1 1.50 0.905 164.68 2.30 52.30 0.0333 - 16.9 0.707 160.1 1.55 0.907 162.72 2.18 51.28 0.0325 - 17.3 0.712 161.0 1.60 0.908 161.85 2.11 49.87 0.0327 - 17.9 0.712 160.0 1.65 0.908 160.93 2.06 48.41 0.0328 - 18.7 0.713 159.1 1.70 0.908 160.05 2.00 46.98 0.0328 - 19.8 0.713 158.1 1.75 0.907 159.11 1.95 45.59 0.0330 - 20.1 0.712 157.3 1.80 0.907 158.22 1.90 44.16 0.0330 - 20.6 0.713 156.4 1.85 0.907 157.41 1.86 42.77 0.0330 - 21.2 0.714 155.6 1.90 0.907 156.52 1.82 41.41 0.0332 - 22.4 0.713 154.8 1.95 0.907 155.57 1.78 39.95 0.0332 - 22.9 0.713 154.0 2.00 0.906 154.82 1.74 38.64 0.0335 - 23.8 0.713 153.4 2.05 0.905 153.97 1.71 37.30 0.0336 - 24.5 0.712 152.7 2.10 0.904 153.06 1.67 35.97 0.0339 - 25.1 0.712 152.1 2.15 0.905 152.15 1.65 34.63 0.0339 - 26.0 0.712 151.5 2.20 0.903 151.26 1.62 33.28 0.0340 - 26.8 0.711 150.9 2.25 0.902 150.30 1.59 31.95 0.0341 - 27.4 0.709 150.3 2.30 0.901 149.48 1.57 30.67 0.0344 - 28.0 0.709 149.7 2.35 0.901 148.64 1.55 29.34 0.0345 - 28.5 0.707 149.2 2.40 0.900 147.66 1.53 28.02 0.0348 - 29.1 0.705 148.6 2.45 0.899 146.68 1.52 26.72 0.0351 - 29.6 0.703 148.0 2.50 0.899 145.77 1.50 25.40 0.0353 - 30.6 0.703 147.3 2.55 0.897 144.90 1.49 24.06 0.0356 - 31.2 0.699 146.8 2.60 0.896 143.88 1.47 22.69 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34 0.0365 - 32.5 0.695 145.6 2.70 0.894 142.07 1.45 19.94 0.0370 - 33.3 0.692 144.9 2.75 0.893 141.15 1.43 18.49 0.0375 - 34.0 0.689 144.2 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA MRFG35002N6T1 RF Device Data Freescale Semiconductor 7 S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2.80 0.890 140.26 1.42 17.14 0.0381 - 35.1 0.687 143.5 2.85 0.889 139.29 1.42 15.69 0.0385 - 36.3 0.684 142.8 2.90 0.888 138.19 1.41 14.28 0.0386 - 37.0 0.682 142.0 2.95 0.887 137.20 1.40 12.80 0.0388 - 38.3 0.678 141.2 3.00 0.885 136.18 1.40 11.33 0.0392 - 38.9 0.676 140.3 3.05 0.884 135.00 1.39 9.81 0.0394 - 39.6 0.671 139.4 3.10 0.883 133.98 1.38 8.29 0.0398 - 40.5 0.668 138.4 3.15 0.881 132.89 1.38 6.77 0.0402 - 41.3 0.665 137.3 3.20 0.880 131.67 1.37 5.14 0.0407 - 42.2 0.662 136.2 3.25 0.879 130.56 1.37 3.56 0.0412 - 42.9 0.658 135.1 3.30 0.878 129.47 1.36 1.92 0.0415 - 44.0 0.656 133.9 3.35 0.876 128.25 1.36 0.22 0.0419 - 45.1 0.651 132.8 3.40 0.876 127.01 1.35 - 1.44 0.0422 - 46.2 0.648 131.5 3.45 0.874 125.80 1.35 - 3.12 0.0428 - 47.2 0.646 130.2 3.50 0.872 124.44 1.35 - 4.89 0.0431 - 48.0 0.642 129.0 3.55 0.871 123.10 1.34 - 6.62 0.0438 - 49.1 0.638 127.5 3.60 0.871 121.58 1.34 - 8.32 0.0442 - 50.2 0.637 126.0 3.65 0.867 120.32 1.33 - 10.12 0.0449 - 51.3 0.633 124.9 3.70 0.867 118.80 1.33 - 11.94 0.0455 - 53.0 0.629 123.5 3.75 0.865 117.37 1.33 - 13.68 0.0458 - 54.1 0.626 122.0 3.80 0.864 115.86 1.32 - 15.54 0.0458 - 55.7 0.624 120.5 3.85 0.863 114.26 1.32 - 17.42 0.0460 - 56.6 0.620 119.1 3.90 0.861 112.73 1.31 - 19.27 0.0464 - 58.1 0.617 117.6 3.95 0.859 111.11 1.31 - 21.16 0.0469 - 59.2 0.615 116.1 4.00 0.859 109.30 1.31 - 23.12 0.0472 - 60.4 0.611 114.7 4.05 0.858 107.69 1.30 - 25.03 0.0476 - 61.5 0.608 113.2 4.10 0.855 106.01 1.30 - 26.95 0.0482 - 62.6 0.605 111.8 4.15 0.854 104.09 1.30 - 28.98 0.0488 - 64.0 0.602 110.3 4.20 0.852 102.36 1.30 - 30.89 0.0491 - 65.7 0.599 108.8 4.25 0.850 100.53 1.29 - 32.85 0.0498 - 67.1 0.596 107.4 4.30 0.851 98.59 1.29 - 34.85 0.0500 - 68.5 0.593 106.0 4.35 0.848 96.65 1.29 - 36.86 0.0504 - 70.2 0.589 104.4 4.40 0.847 94.71 1.29 - 38.87 0.0509 - 71.6 0.586 102.9 4.45 0.846 92.56 1.29 - 40.97 0.0515 - 73.3 0.583 101.4 4.50 0.845 90.47 1.29 - 43.11 0.0519 - 74.6 0.580 99.8 4.55 0.843 88.43 1.29 - 45.16 0.0526 - 76.2 0.576 98.2 4.60 0.840 86.15 1.29 - 47.39 0.0531 - 77.8 0.572 96.5 4.65 0.839 83.96 1.29 - 49.59 0.0537 - 79.6 0.568 94.8 4.70 0.837 81.79 1.29 - 51.81 0.0541 - 81.3 0.564 93.0 4.75 0.835 79.39 1.30 - 54.06 0.0546 - 83.0 0.559 91.2 4.80 0.834 77.08 1.30 - 56.36 0.0550 - 85.0 0.556 89.4 4.85 0.832 74.81 1.30 - 58.58 0.0554 - 86.6 0.550 87.6 4.90 0.831 72.32 1.30 - 60.91 0.0560 - 88.1 0.546 85.5 4.95 0.831 69.82 1.31 - 63.36 0.0565 - 90.0 0.542 83.6 5.00 0.829 67.43 1.31 - 65.78 0.0571 - 91.8 0.537 81.5 5.05 0.826 64.82 1.31 - 68.28 0.0578 - 93.5 0.532 79.2 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued) MRFG35002N6T1 8 RF Device Data Freescale Semiconductor Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued) S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 5.10 0.826 62.21 1.31 - 70.79 0.0583 - 95.6 0.528 77.0 5.15 0.824 59.75 1.31 - 73.33 0.0592 - 97.5 0.524 74.7 5.20 0.821 57.08 1.31 - 75.85 0.0596 - 99.5 0.519 72.3 5.25 0.819 54.50 1.31 - 78.30 0.0605 - 101.5 0.516 70.0 5.30 0.818 51.91 1.32 - 80.93 0.0610 - 103.7 0.512 67.4 5.35 0.815 49.24 1.32 - 83.65 0.0617 - 105.8 0.510 64.6 5.40 0.814 46.40 1.32 - 86.36 0.0626 - 108.2 0.506 61.9 5.45 0.812 43.69 1.32 - 89.16 0.0629 - 110.5 0.501 59.0 ARCHIVE INFORMATION ARCHIVE INFORMATION f GHz MRFG35002N6T1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 D 1 2 R 0.115 2.92 L 0.020 0.51 4 0.35 (0.89) X 45_" 5 _ ARCHIVE INFORMATION N K Q ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ 4 ZONE W 2 1 3 G S C Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE ZONE X VIEW Y - Y mm SOLDER FOOTPRINT P U H ZONE V inches 10_DRAFT CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 ARCHIVE INFORMATION B 0.115 2.92 MRFG35002N6T1 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Jan. 2008 Description • Listed replacement part, p. 1 ARCHIVE INFORMATION ARCHIVE INFORMATION • Added Product Documentation and Revision History, p. 11 MRFG35002N6T1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRFG35002N6T1 Document Number: MRFG35002N6 Rev. 2, 1/2008 12 RF Device Data Freescale Semiconductor