MRFG35010AR1

Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —10 dB Drain Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth • 10 Watts P1dB @ 3550 MHz, CW • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT CASE 360D - 02, STYLE 1 NI - 360HF Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS 15 Vdc Gate - Source Voltage VGS -5 Vdc RF Input Power Pin 33 dBm Tstg - 65 to +150 °C Tch 175 °C Symbol Value (1, 2) Storage Temperature Range Channel Temperature (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Case Temperature 79°C, 1 W CW Class AB Class A RθJC 4.0 4.1 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFG35010AR1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Characteristic IDSS — 2.9 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS —