MW4IC2230GMBR5

Document Number: MW4IC2230 Freescale Semiconductor Rev. 5, 5/2006 Replaced by MW4IC2230NBR1(GNBR1). There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION The MW4IC2230M wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Drain Efficiency — 15% ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth Driver Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 31.5 dB ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW Pout. • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VRD1 VRG1 VDS2 VDS1 3 Stages IC RFin VDS3/RFout VGS1 VGS2 VGS3 Quiescent Current Temperature Compensation Figure 1. Functional Block Diagram MW4IC2230MBR1 MW4IC2230GMBR1 2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GMBR1 GND VDS2 VRD1 VRG1 VDS1 1 2 3 4 5 16 15 RFin 6 14 VDS3/ RFout VGS1 VGS2 VGS3 GND 7 8 9 10 11 13 12 GND GND ARCHIVE INFORMATION RF LDMOS Wideband Integrated Power Amplifiers (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MW4IC2230MBR1 MW4IC2230GMBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +8 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Channel Temperature TJ 200 °C Input Power Pin 20 dBm Symbol Value (1) Unit Table 2. Thermal Characteristics Thermal Resistance, Junction to Case RθJC ARCHIVE INFORMATION Stage 1 Stage 2 Stage 3 °C/W 10.5 5.1 2.3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 29 31.5 — dB Input Return Loss IRL — - 25 - 10 dB — — - 53.5 - 52 - 50 — Adjacent Channel Power Ratio ACPR Pout = 0.4 W Avg. Pout = 1.26 W Avg. dBc Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, 2110 MHz