Freescale Semiconductor
Technical Data
Document Number: MW7IC930N
Rev. 1, 10/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC930N wideband integrated circuit is designed with on--chip
matching that makes it usable from 728 to 960 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation.
Driver Application — 900 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 =
106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency (1)
Gps
(dB)
PAE
(%)
ACPR
(dBc)
920 MHz
36.6
16.1
--48.0
940 MHz
36.8
16.7
--48.7
960 MHz
36.6
17.3
--48.6
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 30 Watts
CW Pout.
• Typical Pout @ 1 dB Compression Point ≃ 31 Watts CW, IDQ1 = 40 mA,
IDQ2 = 340 mA
Driver Application — 700 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 =
106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
728 MHz
36.4
16.1
--47.7
748 MHz
36.4
16.1
--47.8
768 MHz
36.4
16.0
--47.9
MW7IC930NR1
MW7IC930GNR1
MW7IC930NBR1
728--768 MHz, 920--960 MHz,
3.2 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886--01
TO--270 WB--16
PLASTIC
MW7IC930NR1
CASE 1887--01
TO--270 WB--16 GULL
PLASTIC
MW7IC930GNR1
CASE 1329--09
TO--272 WB--16
PLASTIC
MW7IC930NBR1
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2)
• Integrated ESD Protection
• 225°C Capable Plastic Package
GND
1
16
GND
2
NC
• RoHS Compliant
15
NC
3
NC
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
4
DS1
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (2)
VGS2
Figure 1. Functional Block Diagram
GND
5
RFin
6
14
RFout/VDS2
GND
VGS1
VGS2
NC
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
20
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 80°C, 3.2 W CW)
(Case Temperature 80°C, 30 W CW)
Stage 1, 28 Vdc, IDQ1 = 106 mA
Stage 2, 28 Vdc, IDQ2 = 285 mA
RθJC
°C/W
5.5
1.6
5.8
1.2
Stage 1, 28 Vdc, IDQ1 = 40 mA
Stage 2, 28 Vdc, IDQ2 = 340 mA
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 14 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 106 mA)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage (4)
(VDD = 28 Vdc, IDQ1 = 106 mA, Measured in Functional Test)
VGG(Q)
6.9
9.4
11.9
Vdc
Characteristic
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VGG = 3.3 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 74 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 285 mA)
VGS(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, IDQ2 = 285 mA, Measured in Functional Test)
VGG(Q)
4.2
5.9
7.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 740 mA)
VDS(on)
0.1
0.3
0.8
Vdc
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.,
f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
33
35.9
38
dB
Power Added Efficiency
PAE
14
16.5
—
%
ACPR
—
--49.5
--46
dBc
IRL
—
--18.7
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 =
106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
IRL (dB)
920 MHz
36.6
16.1
--48.0
--19.9
940 MHz
36.8
16.7
--48.7
--20.8
960 MHz
36.6
17.3
--48.6
--19.7
1. VGG = 2.25 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 =
285 mA, 920--960 MHz Bandwidth
VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 340 mA
Pout @ 1 dB Compression Point, CW
P1dB
—
31
—
—
45
—
W
IMD Symmetry @ 25 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
80
—
MHz
∆IQT
—
0.02
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 3.2 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.036
—
dB/°C
∆P1dB
—
0.01
—
dBm/°C
Quiescent Current Accuracy over Temperature (1)
with 3 kΩ Gate Feed Resistors (--30 to 85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
Typical W--CDMA Broadband Performance — 700 MHz (In Freescale 700 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
IRL (dB)
728 MHz
36.4
16.1
--47.7
--17.9
748 MHz
36.4
16.1
--47.8
--20.7
768 MHz
36.4
16.0
--47.9
--21.8
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
4
RF Device Data
Freescale Semiconductor
VDD1
C14 C15
R7
C13
C18
C9
C6
R4
R5
C5 C4
R6
VGG1
C16
C8 C7
C2
C1
CUT OUT AREA
C17
VDD2
C11
C12
C10
C3
MW7IC930N
Rev 2
VGG2
R1
R2
R3
Figure 3. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 900 MHz
Table 6. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C7
47 pF Chip Capacitors
ATC600F470JT250XT
ATC
C2, C5, C8
10 nF, 50 V Chip Capacitors
C0603C103J5RAC--TU
Kemet
C3, C6
1 μF, 50 V Chip Capacitors
GRM21BR71H105KA12L
Murata
C9, C15
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C11
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C12
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C16, C17
100 μF, 50 V Electrolytic Capacitors
MCGPR35V337M10X16--RH
Multicomp
C18
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
R1, R2, R3, R4, R5, R6
1000 Ω, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
R7
0 Ω, 3A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.020″, εr = 3.5
RF--35
Taconic
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
5
37
16
14
Gps
36.5
12
36
PARC
35.5
35
3.84 MHz Channel Bandwidth
34.5 Input Signal PAR = 7.5 dB @ 0.01%
34 Probability on CCDF
33.5
800
825
850
875
ACPR
925
950
--18
--42
--20
--44
IRL
900
--40
975
--46
--48
--50
1000
--22
--24
--26
--28
0.5
0
--0.5
--1
--1.5
PARC (dB)
Gps, POWER GAIN (dB)
18
PAE
IRL, INPUT RETURN LOSS (dB)
20
VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1 = 106 mA
38 I
DQ2 = 285 mA, Single--Carrier W--CDMA
37.5
ACPR (dBc)
38.5
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 900 MHz
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 3.2 Watts Avg.
--10
VDD = 28 Vdc, Pout = 25 W (PEP), IDQ1 = 106 mA
IDQ2 = 285 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--L
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
37
0
36.5
36
35.5
35
34.5
40
--1 dB = 6.41 W
PARC
--1
34
VDD = 28 Vdc
IDQ1 = 106 mA
IDQ2 = 285 mA
f = 940 MHz
--2
--2 dB = 8.98 W
28
--3 dB = 12.17 W
--3
22
--5
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
PAE
--4
ACPR
2
--26
46
Gps
5
8
11
16
10
--30
--34
--38
ACPR (dBc)
1
PAE, POWER ADDED EFFICIENCY (%)
37.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--42
--46
--50
14
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 900 MHz
940 MHz
Gps, POWER GAIN (dB)
37
920 MHz
36.5 VDD = 28 Vdc
36 IDQ1 = 106 mA, IDQ2 = 285 mA
Single--Carrier W--CDMA, 3.84 MHz
35.5 Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
35 Probability on CCDF
34.5
PAE
34
33.5
960 MHz 940 MHz
54
--5
42
36
30
920 MHz
24
18
12
6
10
1
0
48
920 MHz
ACPR
33
60
50
--10
--15
--20
--25
--30
ACPR (dBc)
37.5
960 MHz
960 MHz
Gps
PAE, POWER ADDED EFFICIENCY (%)
38
--35
--40
--45
--50
0
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
0
40
--5
30
--10
25
--15
VDD = 28 Vdc
Pin = --10 dBm
IDQ1 = 106 mA
IDQ2 = 285 mA
20
15
10
450
550
650
750
IRL (dB)
GAIN (dB)
Gain
35
--20
IRL
--25
850
950
1050
1150
--30
1250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.
f
MHz
Zin
Ω
Zload
Ω
820
37.95 + j2.31
4.70 + j0.98
840
39.95 + j2.72
4.29 + j1.23
860
42.70 + j1.02
3.93 + j1.67
880
44.40 -- j1.38
3.63 + j2.15
900
46.25 -- j4.92
3.41 + j2.61
920
45.70 -- j8.41
3.14 + j3.05
940
45.46 -- j11.47
2.94 + j3.48
960
45.07 -- j15.19
2.85 + j3.90
43.49 -- j18.03
2.69 + j4.32
980
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance — 900 MHz
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 900 MHz
VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pulsed CW,
10 μsec(on), 10% Duty Cycle
51
Ideal
Pout, OUTPUT POWER (dBm)
50
f = 960 MHz
49
f = 920 MHz
48
47
Actual
46
f = 920 MHz
45
f = 960 MHz
44
f = 940 MHz
f = 940 MHz
43
42
41
9
10
11
12
13
14
16
15
17
18
19
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
43
46.3
51
47.1
940
42
46.3
50
47
960
42
46.3
50
47
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
55.82 + j15.71
4.54 + j1.15
940
P1dB
52.56 + j20.20
4.38 + j1.21
960
P1dB
49.18 + j25.00
5.04 + j1.15
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
RF Device Data
Freescale Semiconductor
9
VDD1
C14 C15
R7
C13
R5
C5 C4
R6
VGG1
C16
C8 C7
C6
C18
R4
C9
CUT OUT AREA
C17
VDD2
C2
C10
C11
C12
C1
C3
MW7IC930N
Rev 2
VGG2
R1
R2
R3
Figure 13. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 700 MHz
Table 7. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 700 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C7
47 pF Chip Capacitors
ATC600F470JT250XT
ATC
C2, C5, C8
10 nF, 50 V Chip Capacitors
C0603C103J5RAC
Kemet
C3, C6
1 μF, 50 V Chip Capacitors
GRM21BR71H105KA12L
Murata
C9, C15
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10
13 pF Chip Capacitor
ATC100B130JT500XT
ATC
C11
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C12
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C16, C17
100 μF, 50 V Electrolytic Capacitors
MCGPR35V337M10X16--RH
Multicomp
C18
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
R1, R2, R3, R4, R5, R6
1000 Ω, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
R7
0 Ω, 3A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.020″, εr = 3.5
RF--35
Taconic
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 700 MHz
37
36.5
Gps, POWER GAIN (dB)
748 MHz
Gps
33
32.5
ACPR
0
54
--5
48
728 MHz
36 V = 28 Vdc
DD
35.5 IDQ1 = 106 mA, IDQ2 = 285 mA
Single--Carrier W--CDMA, 3.84 MHz
35 Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
34.5 Probability on CCDF
34
728 MHz
PAE
33.5
60
42
36
30
748 MHz
18
12
768 MHz
6
728 MHz
748 MHz
10
1
24
0
50
--10
--15
--20
--25
--30
ACPR (dBc)
768 MHz
PAE, POWER ADDED EFFICIENCY (%)
37.5
--35
--40
--45
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 14. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power — 700 MHz
VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.
f
MHz
Zin
Ω
Zload
Ω
710
25.21 -- j1.21
8.57 + j2.52
720
33.76 + j5.36
8.52 + j2.46
730
38.78 + j1.40
8.44 + j2.34
740
40.14 -- j0.76
8.36 + j2.16
750
35.46 -- j1.15
8.30 + j2.00
760
34.65 -- j0.53
8.32 + j1.90
770
34.75 -- j0.43
8.31 + j1.86
780
36.20 + j0.81
8.27 + j1.98
36.18 + j1.33
8.23 + j2.12
790
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 15. Series Equivalent Input and Load Impedance — 700 MHz
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2009
• Initial Release of Data Sheet
1
Oct. 2010
• Table 1, Maximum Ratings, increased Input Power from 4.7 dBm to 20 dBm to reflect the true capability of
the device, p. 2
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Document Number: MW7IC930N
Rev. 1, 10/2010
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