PBSS4240T,215

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2001 Jul 13 2004 Jan 09 Philips Semiconductors Product specification 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage SYMBOL • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors. PARAMETER MAX. UNIT VCEO collector-emitter voltage 40 V ICM peak collector current 3 A RCEsat equivalent on-resistance