PBSS9110T

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 May 06 2004 May 13 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor FEATURES • SOT23 package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation APPLICATIONS • Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial • DC-to-DC conversion • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T. MARKING TYPE NUMBER PBSS9110T Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS9110T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *U7 Top view handbook, halfpage PBSS9110T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −100 −1 −3 320 UNIT V A A mΩ 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2004 May 13 2 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tamb Tstg Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation junction temperature operating ambient temperature storage temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 limited by Tj(max) CONDITIONS open emitter open base open collector − − − − − − − − − −65 −65 MIN. PBSS9110T MAX. −120 −100 −5 −1 −3 −300 300 480 150 +150 +150 V V V A A UNIT mA mW mW °C °C °C 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 600 Ptot (mW) (1) 001aaa811 400 (2) 200 0 0 40 80 120 160 Tamb (°C) (1) 1 cm2 collector mounting pad. (2) Standard footprint. Fig.2 Power derating curves. 2004 May 13 3 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 417 260 PBSS9110T UNIT K/W K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa814 10 (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on printed-circuit board; 1 cm2 collector mounting pad. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 4 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa813 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 5 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = −80 V; IE = 0 A VCB = −80 V; IE = 0 A; Tj = 150 °C VCE = −80 V; VBE = 0 A VEB = −4 V; IC = 0 A VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −250 mA VCE = −5 V; IC = −500 mA; note 1 VCE = −5 V; IC = −1 A; note 1 VCEsat collector-emitter saturation voltage IC = −250 mA; IB = −25 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −1 A; IB = −100 mA; note 1 IC = −1 A; IB = −100 mA VCE = −5 V; IC = −1 A VCE = −10 V; IC = −50 mA; f = 100 MHz VCB = −10 V; IE = Ie = 0 A; f = 1 MHz MIN. − − − − 150 150 150 125 − − − − − − 100 − PBSS9110T TYP. − − − − − − − − − − − 170 − − − − MAX. −100 −50 −100 −100 − − 450 − −120 −180 −320 320 −1.1 −1 − 17 UNIT nA μA nA nA mV mV mV mΩ V V MHz pF 2004 May 13 6 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 600 hFE (1) 001aaa376 −1.2 VBE (V) −0.8 (1) 001aaa377 400 (2) (2) (3) 200 (3) −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 DC current gain as a function of collector current; typical values. Fig.6 Base-emitter voltage as a function of collector current; typical values. −1 001aaa378 −1 001aaa380 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 May 13 7 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T −10 001aaa381 −10 001aaa379 VBEsat (V) VBEsat (V) −1 (1) (2) (3) −1 −10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. Tamb = 25 °C. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. 103 RCEsat (Ω) 102 001aaa382 103 RCEsat (Ω) 102 001aaa383 10 (1) (2) 10 (1) 1 (3) 1 (2) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. Fig.11 Equivalent on-resistance as a function of collector current; typical values. Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2004 May 13 8 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T IB (mA) = −45 IC −40.5 (A) −36 −1.6 −31.5 −27 −1.2 −2 001aaa384 −0.8 −0.4 −22.5 −18 −13.5 −9 −4.5 0 0 −1 −2 −3 −4 VCE (V) −5 Tamb = 25 °C. (1) (2) (3) (4) IB = 45 mA. IB = 40.5 mA. IB = 36 mA. IB = 31.5 mA. (5) (6) (7) (8) IB = 27 mA. IB = 22.5 mA. IB = 18 mA. IB = 13.5 mA. (9) IB = 9 mA. (10) IB = 4.5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 May 13 9 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads PBSS9110T SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 May 13 10 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS9110T This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 May 13 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 May 13 Document order number: 9397 750 13273