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PDTA143XK

PDTA143XK

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    PDTA143XK - PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW - NXP Semiconductors

  • 数据手册
  • 价格&库存
PDTA143XK 数据手册
PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Rev. 04 — 16 April 2007 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PDTA143XE PDTA143XK PDTA143XM PDTA143XS[1] PDTA143XT PDTA143XU [1] Type number NPN complement JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB PDTC143XE PDTC143XK PDTC143XM PDTC143XS PDTC143XT PDTC143XU SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 100 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I Digital applications I Control of IC inputs I Cost-saving alternative to BC857 series in digital applications I Low current peripheral driver 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Min 3.3 1.7 Typ 4.7 2.1 Max −50 −100 6.1 2.6 Unit V mA kΩ NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab347 006aaa148 Pinning Description Simplified outline Symbol 2 R1 1 R2 3 SOT54A 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab348 006aaa148 2 R1 1 R2 3 SOT54 variant 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab447 006aaa148 2 R1 1 R2 3 SOT23; SOT323; SOT346; SOT416 1 2 3 input (base) GND (emitter) output (collector) 1 2 006aaa144 sym003 3 R1 3 1 R2 2 SOT883 1 2 3 input (base) GND (emitter) output (collector) 1 3 2 Transparent top view 1 R2 R1 3 2 sym003 PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 2 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 3. Ordering information Table 4. Ordering information Package Name PDTA143XE PDTA143XK PDTA143XM PDTA143XS[1] PDTA143XT PDTA143XU [1] Type number Description plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads Version SOT416 SOT346 SC-75 SC-59A SC-101 SC-43A SC-70 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 × 0.6 × 0.5 mm plastic single-ended leaded (through hole) package; SOT54 3 leads plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads SOT23 SOT323 Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Marking code[1] 35 25 DN TA143X *31 *46 Type number PDTA143XE PDTA143XK PDTA143XM PDTA143XS PDTA143XT PDTA143XU [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM output current peak collector current single pulse; tp ≤ 1 ms +7 −20 −100 −100 V V mA mA Conditions open emitter open base open collector Min Max −50 −50 −7 Unit V V V PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 3 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation PDTA143XE PDTA143XK PDTA143XM PDTA143XS PDTA143XT PDTA143XU Tj Tamb Tstg [1] [2] [3] Conditions Tamb ≤ 25 °C [1] [1] [2][3] [1] [1] [1] Min −65 −65 Max 150 250 250 500 250 200 150 +150 +150 Unit mW mW mW mW mW mW °C °C °C junction temperature ambient temperature storage temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient PDTA143XE PDTA143XK PDTA143XM PDTA143XS PDTA143XT PDTA143XU [1] [2] [3] Conditions in free air [1] [1] [2][3] [1] [1] [1] Min Typ Max Unit - - 833 500 500 250 500 625 K/W K/W K/W K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 4 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO ICEO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz Conditions VCB = −50 V; IE = 0 A VCE = −30 V; IB = 0 A VCE = −30 V; IB = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A VCE = −5 V; IC = −10 mA IC = −10 mA; IB = −0.5 mA VCE = −5 V; IC = −100 µA VCE = −0.3 V; IC = −20 mA Min 50 −2.5 3.3 1.7 Typ −0.9 −1.5 4.7 2.1 Max −100 −1 −50 −600 −150 −0.3 6.1 2.6 3 pF mV V V kΩ Unit nA µA µA µA IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 5 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 103 hFE 006aaa202 −103 006aaa203 (1) (2) (3) VCEsat (mV) 102 (1) (2) (3) −102 10 1 −10−1 −1 −10 I C (mA) −102 −10 −1 −10 IC (mA) −102 VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values −10 VI(on) (V) −8 006aaa204 Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values −2.0 VI(off) (V) −1.6 006aaa205 −6 −1.2 (1) (2) −4 (1) (2) (3) −0.8 (3) −2 −0.4 0 −10−1 −1 −10 IC (mA) −102 0 −10−2 −10−1 −1 IC (mA) −10 VCE = −0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = −5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 6 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 8. Package outline 3.1 2.7 3 0.6 0.2 1.3 1.0 1.8 1.4 3 0.45 0.15 0.95 0.60 1.75 0.9 1.45 0.7 3.0 1.7 2.5 1.3 1 2 0.30 0.15 1 0.25 0.10 04-11-04 1 2 0.50 0.35 0.26 0.10 04-11-11 1.9 Dimensions in mm Dimensions in mm Fig 5. Package outline SOT416 (SC-75) 0.62 0.55 0.55 0.47 0.30 0.22 3 Fig 6. Package outline SOT346 (SC-59A/TO-236) 0.50 0.46 4.2 3.6 0.45 0.38 0.65 0.30 0.22 0.20 0.12 0.35 Dimensions in mm 1.02 0.95 4.8 4.4 0.48 0.40 1 2 2.54 3 1.27 2 1 5.2 5.0 03-04-03 Dimensions in mm 14.5 12.7 04-11-16 Fig 7. Package outline SOT883 (SC-101) Fig 8. Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 4.2 3.6 1.27 4.2 3.6 0.45 0.38 0.48 0.40 1 3 max 2.5 max 1 0.48 0.40 2 2.54 3 1.27 4.8 4.4 2 5.08 2.54 3 5.2 5.0 14.5 12.7 04-06-28 5.2 5.0 Dimensions in mm 14.5 12.7 4.8 4.4 Dimensions in mm 05-01-10 Fig 9. Package outline SOT54A Fig 10. Package outline SOT54 variant PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 7 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 3.0 2.8 3 1.1 0.9 2.2 1.8 3 0.45 0.15 1.1 0.8 0.45 0.15 2.5 1.4 2.1 1.2 2.2 1.35 2.0 1.15 1 2 1 0.48 0.38 0.15 0.09 04-11-04 Dimensions in mm 2 0.4 0.3 1.3 04-11-04 0.25 0.10 1.9 Dimensions in mm Fig 11. Package outline SOT23 (TO-236AB) Fig 12. Package outline SOT323 (SC-70) PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 8 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PDTA143XE PDTA143XK PDTA143XM PDTA143XS Package SOT416 SOT346 SOT883 SOT54 SOT54A SOT54 variant PDTA143XT PDTA143XU [1] Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch bulk, delta pinning 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 -115 -215 -115 5000 -412 -112 10000 -135 -135 -315 -116 -126 -235 -135 SOT23 SOT323 For further information and the availability of packing methods, see Section 12. PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 9 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 10. Revision history Table 10. Revision history Release date 20070416 Data sheet status Product data sheet Change notice Supersedes PDTA143X_SERIES_3 Document ID PDTA143X_SER_4 Modifications: • • • • • • • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PDTA143XEF removed Section 1.2 “Features”: amended Section 1.3 “Applications”: amended Table 4 “Ordering information”: added Table 5 “Marking codes”: enhanced table note section Table 6 “Limiting values”: typing error for value VEBO emitter-base voltage corrected Table 6 “Limiting values”: ICM peak collector current conditions added Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage Table 8 “Characteristics”: Vi(off) redefined to VI(off) off-state input voltage Figure 1, 2, 3, 4, 9 and 10: added Figure 5, 6, 7, 8, 11 and 12: superseded by minimized package outline drawings Section 9 “Packing information”: added Section 11 “Legal information”: updated Product specification Product specification PDTA143X_SERIES_2 PDTA143XEF_1 PDTA143XK_1 PDTA143XE_1 PDTA143XT_1 - PDTA143X_SERIES_3 PDTA143X_SERIES_2 20040804 20030410 PDTA143XEF_1 PDTA143XK_1 PDTA143XE_1 PDTA143XT_1 20020314 20020115 19990420 19990420 Product specification Product specification Product specification Product specification - PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 10 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PDTA143X_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 April 2007 11 of 12 NXP Semiconductors PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 April 2007 Document identifier: PDTA143X_SER_4
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