PMN25EN,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia SO T4 57 PMN25EN 30 V, 6.2 A N-channel Trench MOSFET Rev. 1 — 29 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic level compatible  Trench MOSFET technology  Very fast switching 1.3 Applications  Relay driver  Low-side loadswitch  High-speed line driver  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V - - 6.2 A - 20 23 mΩ drain current ID [1] VGS = 10 V; Tamb = 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = 10 V; ID = 6.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G SOT457 (TSOP6) S 017aaa253 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number PMN25EN Package Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN25EN T8 PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage drain current ID total power dissipation Ptot 20 V VGS = 10 V; Tamb = 25 °C - 6.2 A VGS = 10 V; Tamb = 100 °C [1] - 3.9 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 [1] Tamb = 25 °C - 25 A [2] - 540 mW [1] - 1385 mW - 6250 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.4 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMN25EN Product data sheet 0 −75 175 Tj (°C) Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 017aaa311 102 ID (A) 10 (1) (2) 1 (3) (4) (5) 10–1 (6) 10–2 10–1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 200 230 K/W [2] - 78 90 K/W - 15 20 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa209 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa210 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 0.1 10 0 1 10–3 0.33 0.2 0.05 0.02 0.01 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 6.2 A; Tj = 25 °C - 20 23 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 10 V; ID = 6.2 A; Tj = 150 °C - 31 36 mΩ VGS = 4.5 V; ID = 5.4 A; Tj = 25 °C - 24 31 mΩ VDS = 10 V; ID = 6.2 A; Tj = 25 °C - 18 - S VDS = 15 V; ID = 6 A; VGS = 10 V; Tj = 25 °C - 9.6 11 nC - 1.5 - nC - 1.5 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 6 A - 492 - pF - 115 - pF - 54 - pF - 5 - ns - 28 - ns turn-off delay time - 94 - ns fall time - 40 - ns - 0.78 1.2 V Source-drain diode VSD source-drain voltage PMN25EN Product data sheet IS = 1.4 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 017aaa312 25 10 V 4.5 V ID (A) VGS = 3.4 V 017aaa244 10–3 ID (A) 20 3.2 V 10–4 15 3.0 V (1) (2) (3) 2.9 V 10 10–5 2.7 V 5 2.4 V 0 0 1 2 3 VDS (V) 4 10–6 Tj = 25 °C 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values PMN25EN Product data sheet Fig 7. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 017aaa314 100 RDSon (mΩ) (1) (2) RDSon (mΩ) (4) (3) 017aaa315 100 80 75 60 (5) 50 40 (1) (6) (7) (8) 20 0 25 (2) 2 10 18 ID (A) 0 26 0 2 4 Tj = 25 °C ID = 6.0 A (1) VGS = 2.7 V (1) Tj = 150 °C (2) VGS = 2.8 V (2) Tj = 25 °C 6 8 10 VGS (V) (3) VGS = 2.9 V (4) VGS = 3.2 V (5) VGS = 3.4 V (6) VGS = 4.0 V (7) VGS = 4.5 V (8) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values Fig 9. 017aaa316 25 ID (A) (1) Drain-source on-state resistance as a function of gate-source voltage; typical values a (2) 20 1.4 15 1.2 10 1.0 (2) (1) 5 0 017aaa248 1.6 0.8 0 1 2 3 4 VGS (V) 5 0.6 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMN25EN Product data sheet Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 017aaa249 3 VGS(th) (V) 017aaa317 103 (1) (1) C (pF) 2 102 (2) 1 (2) (3) (3) 0 –60 0 60 120 Tj (°C) 180 10 10–1 1 10 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa313 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0.0 2.5 5.0 7.5 QG (nC) 10.0 ID = 6 A; VDS = 10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values PMN25EN Product data sheet Fig 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 017aaa318 4 IS (A) 3 (1) (2) 2 1 0 0.0 0.4 0.8 VDS (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT457 JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Fig 18. Package outline SOT457 (TSOP6) PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 19. Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 20. Wave soldering footprint for SOT457 (TSOP6) PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMN25EN v.1 20110829 Product data sheet - - PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. PMN25EN Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 15 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMN25EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 August 2011 © NXP B.V. 2011. All rights reserved. 16 of 17 PMN25EN NXP Semiconductors 30 V, 6.2 A N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .14 Legal information. . . . . . . . . . . . . . . . . . . . . . . .15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Contact information. . . . . . . . . . . . . . . . . . . . . .16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 August 2011 Document identifier: PMN25EN