PSMN7R0-100XS,127

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia TO -2 20F PSMN7R0-100XS N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 3 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Isolated package  Suitable for standard level gate drive 1.3 Applications  AC-to-DC power supply equipment  Server power supplies  Motor control  Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 55 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 57.7 W VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 - 5.4 6.8 mΩ VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 14; see Figure 15 - 34 - nC - 121 - nC - - 420 mJ Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω; see Figure 3 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S Simplified outline Graphic symbol mb source mb D G mounting base; isolated mbb076 S 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number PSMN7R0-100XS Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 25 °C; see Figure 1 - 55 A VGS = 10 V; Tmb = 100 °C; see Figure 1 - 38.9 A - 220 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 57.7 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 48 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 220 A VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω; see Figure 3 - 420 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aag573 60 03aa16 120 ID (A) Pder (%) 50 80 40 30 20 40 10 0 0 0 Fig 1. 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aag574 102 IAL (A) (1) 10 (2) 1 10-3 Fig 3. 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aag575 103 ID (A) Limit RDSon = V DS / ID tp =10 μ s 102 100 μ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig 4. 1 10 102 VDS (V) 103 Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 2.35 2.6 K/W Rth(j-a) thermal resistance from junction to ambient vertical in free air - 55 - K/W 003aag576 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 10-1 0.02 δ= P tp T 10-2 t tp single shot T 10-3 10-6 Fig 5. 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) 102 Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Cisol isolation capacitance Visol(RMS) RMS isolation voltage [1] Conditions [1] 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal waveform; clean and dust free Min Typ Max Unit - 10 - pF - - 2500 V f = 1 MHz PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.6 V µA IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - - 5 VDS = 100 V; VGS = 0 V; Tj = 100 °C - - 100 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 - 5.4 6.8 mΩ VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 13 - 9.45 11.9 mΩ VGS = 10 V; ID = 15 A; Tj = 175 °C; see Figure 13 - 15.1 19 mΩ f = 1 MHz - 0.74 - Ω ID = 15 A; VDS = 50 V; VGS = 10 V; see Figure 14; see Figure 15 - 121 - nC RDSon RG drain-source on-state resistance internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge QGS gate-source charge - 26.3 - nC QGS(th) pre-threshold gate-source charge - 11 - nC QGS(th-pl) post-threshold gate-source charge - 15.3 - nC QGD gate-drain charge - 34 - nC VGS(pl) gate-source plateau voltage ID = 15 A; VDS = 50 V; see Figure 14; see Figure 15 - 4.1 - V Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16; see Figure 17 - 6686 - pF Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 438 - pF Crss reverse transfer capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16; see Figure 17 - 272 - pF td(on) turn-on delay time - 29 - ns tr rise time VDS = 50 V; RL = 4 Ω; VGS = 10 V; RG(ext) = 4.7 Ω; Tj = 25 °C - 30 - ns td(off) turn-off delay time - 94 - ns tf fall time - 43 - ns PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - 0.76 1.2 V - 64 - ns - 167 - nC Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; see Figure 18 trr reverse recovery time Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V 003aag577 200 10 ID (A) 003aag578 20 6.0 RDSon (mΩ) VGS (V) = 5.0 160 16 120 4.8 12 80 4.6 8 4.4 40 4 4.2 0 0 0 Fig 6. 1 2 3 4 VDS(V) Output characteristics; drain current as a function of drain-source voltage; typical values 003aag579 200 gfs (S) 4 Fig 7. 8 12 16 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 003aag580 120 ID (A) 100 160 VGS (V) 80 120 60 80 40 Tj = 175 °C 40 0 0 0 Fig 8. Tj = 25 °C 20 40 80 ID (A) 120 Forward transconductance as a function of drain current; typical values PSMN7R0-100XS Product data sheet 0 Fig 9. 2 4 VGS (V) 6 Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aad280 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 typ max 10−3 typ 2 min 10−2 max 10−4 min 10−5 1 10−6 0 −60 0 60 120 0 180 4 Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aag583 16 VGS (V) = 4.6 003aag654 3 5.0 4.8 6 VGS (V) Fig 10. Gate-source threshold voltage as a function of junction temperature RDSon (mΩ) 2 Tj (°C) a 2.5 12 2 8 1.5 5.5 6.0 10 1 4 0.5 0 0 40 80 120 160 ID (A) 200 Fig 12. Drain-source on-state resistance as a function of drain current; typical values PSMN7R0-100XS Product data sheet 0 -60 0 60 120 Tj (°C) 180 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aag586 10 VDS VGS (V) ID 80V 8 50V VDS = 20V VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS QGD QG(tot) 2 003aaa508 0 0 Fig 14. Gate charge waveform definitions 80 120 QG (nC) 160 Fig 15. Gate-source voltage as a function of gate charge; typical values 003aag587 104 40 003aag643 12000 C (pF) 10000 Ciss Ciss C (pF) 8000 103 6000 Crss 102 10-1 1 10 VDS (V) 2000 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PSMN7R0-100XS Product data sheet Crss 4000 Coss 0 0 3 6 9 VGS (V) 12 Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage, typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aag588 200 IS (A) 160 120 80 Tj = 175 °C 40 Tj = 25 °C 0 0 0.4 0.8 1.2 VSD (V) 1.6 Fig 18. Source current as a function of source-drain voltage; typical values PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 19. Package outline SOT186A (TO-220F) PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN7R0-100XS v.3 20120306 Product data sheet - PSMN7R0-100XS v.2 - PSMN7R0-100XS v.1 Modifications: PSMN7R0-100XS v.2 PSMN7R0-100XS Product data sheet • • Status changed from preliminary to product. Various changes to content. 20111021 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 10.2 Definitions Preview— The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use— NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data— The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications— Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values— Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Terms and conditions of commercial sale— NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations— A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-buslogo,ICODE,I-CODE,ITEC,Labelution ,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PSMN7R0-100XS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PSMN7R0-100XS NXP Semiconductors N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 March 2012 Document identifier: PSMN7R0-100XS