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PTN3460IBS/F2Z

PTN3460IBS/F2Z

  • 厂商:

    NXP(恩智浦)

  • 封装:

    VQFN56

  • 描述:

    IC DISPLAYPORT TO LVDS 56HVQFN

  • 数据手册
  • 价格&库存
PTN3460IBS/F2Z 数据手册
PTN3460I eDP to LVDS bridge for industrial and embedded applications Rev. 2.1 — 16 August 2016 Product data sheet 1. General description PTN3460I is an (embedded) DisplayPort to LVDS bridge device that enables connectivity between an (embedded) DisplayPort (eDP) source and LVDS display panel. It processes the incoming DisplayPort (DP) stream, performs DP to LVDS protocol conversion and transmits processed stream in LVDS format. PTN3460I has two high-speed ports: Receive port facing DP Source (for example, CPU/GPU/chip set), Transmit port facing the LVDS receiver (for example, LVDS display panel controller). The PTN3460I can receive DP stream at link rate 1.62 Gbit/s or 2.7 Gbit/s and it can support 1-lane or 2-lane DP operation. It interacts with DP source via DP Auxiliary (AUX) channel transactions for DP link training and setup. It supports single bus or dual bus LVDS signaling with color depths of 18 bits per pixel or 24 bits per pixel and pixel clock frequency up to 112 MHz. The LVDS data packing can be done either in VESA or JEIDA format. Also, the DP AUX interface transports I2C-over-AUX commands and support EDID-DDC communication with LVDS panel. To support panels without EDID ROM, the PTN3460I can emulate EDID ROM behavior avoiding specific changes in system video BIOS. PTN3460I is suitable for industrial design due to its wide temperature range of 40 C to +85 C. PTN3460I provides high flexibility to optimally fit under different platform environments. It supports three configuration options: multi-level configuration pins, DP AUX interface, and I2C-bus interface. PTN3460I can be powered by either 3.3 V supply only or dual supplies (3.3 V/1.8 V) and is available in the HVQFN56 7 mm  7 mm package with 0.4 mm pitch. 2. Features and benefits 2.1 Device features  Embedded microcontroller and on-chip Non-Volatile Memory (NVM) allow for flexibility in firmware updates  LVDS panel power-up (/down) sequencing control  Firmware controlled panel power-up (/down) sequence timing parameters  No external timing reference needed  EDID ROM emulation to support panels with no EDID ROM. Emulation ON/OFF is set via configuration pin CFG4 (see Table 14 for more details)  Supports EDID structure v1.3  On-chip EDID emulation up to seven different EDID data structures PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications  eDP complying PWM signal generation or PWM signal pass through from eDP source 2.2 DisplayPort receiver features  Compliant to DP v1.2a and v1.1a  Compliant to eDP v1.2 and v1.1  Supports Main Link operation with one or two lanes (select through configuration pin CFG3, see Table 4 for more details)  Supports Main Link rate: Reduced Bit Rate (1.62 Gbit/s) and High Bit Rate (2.7 Gbit/s)  Supports 1 Mbit/s AUX channel  Supports Native AUX and I2C-over-AUX transactions  Supports down spreading to minimize EMI  Integrated 50  termination resistors provide impedance matching on both Main Link lanes and AUX channel  High performance Auto Receive Equalization enabling optimal channel compensation, device placement flexibility and power saving at CPU/GPU  Supports eDP authentication options: Alternate Scrambler Seed Reset (ASSR) and Alternate Framing  Supports Full Link training  Supports DisplayPort symbol error rate measurements  Supports PCB routing flexibility by programming for:  AUX P/N swapping  DP Main Link P/N swapping 2.3 LVDS transmitter features          Compatible with ANSI/TIA/EIA-644-A-2001 standard Supports RGB data packing as per JEIDA and VESA data formats Supports pixel clock frequency from 6 MHz to 112 MHz Supports single LVDS bus operation up to 112 mega pixels per second Supports dual LVDS bus operation up to 224 mega pixels per second Supports color depth options: 18 bpp, 24 bpp Programmable center spreading of pixel clock frequency to minimize EMI Supports 1920  1200 at 60 Hz resolution in dual LVDS bus mode Programmable LVDS signal swing to pre-compensate for channel attenuation or allow for power saving  Supports PCB routing flexibility by programming for:  LVDS bus swapping  Channel swapping  Differential signal pair swapping  Supports Data Enable polarity programming  DDC control for EDID ROM access; I2C-bus interface up to 400 kbit/s 2.4 Control and system features  Device programmability  Multi-level configuration pins enabling wider choice PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 2 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications  I2C-bus slave interface supporting Standard-mode (100 kbit/s) and Fast-mode (400 kbit/s)  Power management  Low-power state: DP AUX command-based Low-power mode (SET POWER)  Deep power-saving state via a dedicated pin 2.5 General  Power supply: with on-chip regulator  3.3 V  10 % (integrated regulator switched on)  3.3 V  10 %, 1.8 V  5 % (integrated regulator switched off)  ESD: 8 kV HBM, 1 kV CDM  Operating temperature range: 40 C to +85 C  HVQFN56 package 7 mm  7 mm, 0.4 mm pitch; exposed center pad for thermal relief and electrical ground 3. Applications       Industrial PC design Printer display Automotive dashboard display AIO platforms Notebook platforms Netbooks/net tops 4. System context diagram Figure 1 illustrates the PTN3460I usage. notebook or AIO platform CPU/GPU/ CHIP SET eDP PTN3460I DP to LVDS BRIDGE LVDS LVDS PANEL cable MOTHERBOARD aaa-009841 Fig 1. PTN3460I Product data sheet PTN3460I context diagram All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 3 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 5. Ordering information Table 1. Ordering information Type number Topside mark PTN3460IBS/Fx[1][2] PTN3460IBS[3] Package Name Description Version HVQFN56 plastic thermal enhanced very thin quad flat package; no leads; 56 terminals; body 7  7  0.85 mm[4]; 0.4 mm pitch SOT949-2 [1] PTN3460IBS/Fx is firmware -specific, where the ‘x’ indicates the firmware version. [2] Notes on firmware and marking: a) Firmware versions are not necessarily backwards compatible. b) Box/reel labels will indicate the firmware version via the orderable part number (e.g., labeling will indicate PTN3460IBS/F1 for firmware version 1). [3] Topside marking is limited to PTN3460IBS and will not indicate the firmware version. [4] Maximum package height is 1 mm. 5.1 Ordering options Table 2. Ordering options Type number Orderable part number Package PTN3460IBS/Fx[1] PTN3460IBS/FxMP HVQFN56 [1] Packing method Minimum order quantity Temperature Reel 13” Q2/T3 *standard mark SMD dry pack 2000 Tamb = 40 C to +85 C PTN3460IBS/Fx uses specific firmware version (‘x’ = 1, 2, 3, etc., and changes according to firmware version). PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 4 of 42 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x PTN3460I DIFF CDR, RCV S2P 10b/8b DP1_P, DP1_N DE-SCRAM Vbias INTERFACE DE-SKEWING R[7:0] 10b/8b DIFF CDR, RCV S2P G[7:0] MAIN STREAM B[7:0] TIME CONV. TIMING RECOVERY LVDS DIGITAL SUBSYSTEM LVDS PHY SUBSYSTEM H, V sync I2C-BUS CONTOL INTERFACE RCV MANCHESTER CODEC AUX CONTROL BKLTEN PWMO EDID EMULATION DDC_SCL DDC INTERFACE DDC_SDA DRV Vbias HPDRX aaa-009842 CFG1 Block diagram of PTN3460I CFG3 CFG2 DEV_CFG CFG4 MS_SDA MS_SCL PTN3460I 5 of 42 © NXP Semiconductors N.V. 2016. All rights reserved. PD_N RST_N TESTMODE Fig 2. LVS[A:D]O_P, LVS[A:D]O_N PVCCEN SYSTEM CONTROLLER EPS_N LVSCKE_P, LVSCKE_N LVSCKO_P, LVSCKO_N NONVOLATILE MEMORY DPCD REGISTERS Vbias AUX_P, AUX_N LVS[A:D]E_P, LVS[A:D]E_N ISOCHRONOUS LINK eDP to LVDS bridge for industrial and embedded applications Rev. 2.1 — 16 August 2016 All information provided in this document is subject to legal disclaimers. DP0_P, DP0_N RX PHY DIGITAL DE-SCRAM RX PHY ANALOG SUBSYSTEM NXP Semiconductors 6. Block diagram PTN3460I Product data sheet supply PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 7. Pinning information 43 LVSDO_P 44 LVSDO_N 45 VDD(1V8) 46 LVSCKO_P 47 LVSCKO_N 48 LVSCO_P 49 LVSCO_N 50 VDD(3V3) 51 LVSBO_P 52 LVSBO_N 53 LVSAO_P 54 LVSAO_N terminal 1 index area 55 n.c. 56 EPS_N 7.1 Pinning AUX_N 1 42 LVSAE_N AUX_P 2 41 LVSAE_P GND 3 40 LVSBE_N DP0_P 4 39 LVSBE_P DP0_N 5 38 VDD(3V3) VDD(1V8) 6 37 LVSCE_N DP1_P 7 DP1_N 8 35 LVSCKE_N RST_N 9 34 LVSCKE_P 36 LVSCE_P PTN3460I PD_N 10 33 PVCCEN HPDRX 11 32 LVSDE_N DEV_CFG 12 31 LVSDE_P (1) PWMO 28 CFG4 27 BKLTEN 26 MS_SCL 25 MS_SDA 24 CFG3 23 CFG2 22 CFG1 21 TESTMODE 20 VDD(1V8) 19 GNDREG 18 GNDREG 17 29 DDC_SCL n.c. 16 30 DDC_SDA VDD(3V3) 14 n.c. 15 VDD(3V3) 13 aaa-009843 Transparent top view (1) Center pad is connected to PCB ground plane for electrical grounding and thermal relief. Fig 3. Pin configuration for HVQFN56 Refer to Section 13 “Package outline” for package and pin dimensions. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 6 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 7.2 Pin description Table 3. Pin description Symbol Pin Type Description DisplayPort interface signals DP0_P 4 self-biasing differential input Differential signal from DP source. DP0_P makes a differential pair with DP0_N. The input to this pin must be AC-coupled externally. DP0_N 5 self-biasing differential input Differential signal from DP source. DP0_N makes a differential pair with DP0_P. The input to this pin must be AC-coupled externally. DP1_P 7 self-biasing differential input Differential signal from DP source. DP1_P makes a differential pair with DP1_N. The input to this pin must be AC-coupled externally. DP1_N 8 self-biasing differential input Differential signal from DP source. DP1_N makes a differential pair with DP1_P. The input to this pin must be AC-coupled externally. AUX_P 2 self-biasing differential I/O Differential signal towards DP source. AUX_P makes a differential pair with AUX_N. The pin must be AC-coupled externally. AUX_N 1 self-biasing differential I/O Differential signal towards DP source. AUX_N makes a differential pair with AUX_P. The pin must be AC-coupled externally. HPDRX 11 single-ended 3.3 V CMOS output Hot Plug Detect signal to DP source. LVDS interface signals LVSAE_P 41 LVDS output Even bus, Channel A differential signal to LVDS receiver. LVSAE_P makes a differential pair with LVSAE_N. LVSAE_N 42 LVDS output Even bus, Channel A differential signal to LVDS receiver. LVSAE_N makes a differential pair with LVSAE_P. LVSBE_P 39 LVDS output Even bus, Channel B differential signal to LVDS receiver. LVSBE_P makes a differential pair with LVSBE_N. LVSBE_N 40 LVDS output Even bus, Channel B differential signal to LVDS receiver. LVSBE_N makes a differential pair with LVSBE_P. LVSCE_P 36 LVDS output Even bus, Channel C differential signal to LVDS receiver. LVSCE_P makes a differential pair with LVSCE_N. LVSCE_N 37 LVDS output Even bus, Channel C differential signal to LVDS receiver. LVSCE_N makes a differential pair with LVSCE_P. LVSCKE_P 34 LVDS clock output Even bus, clock differential signal to LVDS receiver. LVSCKE_P makes a differential pair with LVSCKE_N. LVSCKE_N 35 LVDS clock output Even bus, clock differential signal to LVDS receiver. LVSCKE_N makes a differential pair with LVSCKE_P. LVSDE_P 31 LVDS output Even bus, Channel D differential signal to LVDS receiver. LVSDE_P makes a differential pair with LVSDE_N. LVSDE_N 32 LVDS output Even bus, Channel D differential signal to LVDS receiver. LVSDE_N makes a differential pair with LVSDE_P. LVSAO_P 53 LVDS output Odd bus, Channel A differential signal to LVDS receiver. LVSAO_P makes a differential pair with LVSAO_N. LVSAO_N 54 LVDS output Odd bus, Channel A differential signal to LVDS receiver. LVSAO_N makes a differential pair with LVSAO_P. LVSBO_P 51 LVDS output Odd bus, Channel B differential signal to LVDS receiver. LVSBO_P makes a differential pair with LVSBO_N. LVSBO_N 52 LVDS output Odd bus, Channel B differential signal to LVDS receiver. LVSBO_N makes a differential pair with LVSBO_P. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 7 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications Table 3. Pin description …continued Symbol Pin Type Description LVSCO_P 48 LVDS output Odd bus, Channel C differential signal to LVDS receiver. LVSCO_P makes a differential pair with LVSCO_N. LVSCO_N 49 LVDS output Odd bus, Channel C differential signal to LVDS receiver. LVSCO_N makes a differential pair with LVSCO_P. LVSCKO_P 46 LVDS clock output Odd bus, clock differential signal to LVDS receiver. LVSCKO_P makes a differential pair with LVSCKO_N. LVSCKO_N 47 LVDS clock output Odd bus, clock differential signal to LVDS receiver. LVSCKO_N makes a differential pair with LVSCKO_P. LVSDO_P 43 LVDS output Odd bus, Channel D differential signal to LVDS receiver. LVSDO_P makes a differential pair with LVSDO_N. LVSDO_N 44 LVDS output Odd bus, Channel D differential signal to LVDS receiver. LVSDO_N makes a differential pair with LVSDO_P. DDC_SDA 30 open-drain DDC data I/O DDC data signal connection to display panel. Pulled-up by external termination resistor (5 V tolerant). DDC_SCL 29 open-drain DDC clock I/O DDC clock signal connection to display panel. Pulled-up by external termination resistor (5 V tolerant). Panel and backlight interface signals PVCCEN 33 CMOS output Panel power (VCC) enable output. PWMO 28 CMOS output PWM output signal to display panel. BKLTEN 26 CMOS output Backlight enable output. Control interface signals PD_N 10 CMOS input Chip power-down input (active LOW). If PD_N is LOW, then the device is in Deep power-down completely, even if supply rail is ON; for the device to be able to operate, the PD_N pin must be HIGH. RST_N 9 CMOS input Chip reset pin (active LOW); internally pulled-up. The pin is meant to reset the device and all its internal states/logic; all internal registers are taken to default value after RST_N is applied and made HIGH. If RST_N is LOW, the device stays in reset condition and for the device to be able to operate, RST_N must be HIGH. CMOS I/O I2C-bus address/mode selection pin. TESTMODE 20 CMOS input If TESTMODE is left open or pulled HIGH, CFG[4:1] operate as JTAG pins. If TESTMODE is pulled LOW, these pins serve as configuration pins. CFG1 input Behavior defined by TESTMODE pin. DEV_CFG 12 21 If TESTMODE is left open or pulled HIGH, this pin functions as JTAG TEST CLOCK input. If TESTMODE is pulled LOW, this pin acts as configuration input. CFG2 22 input Behavior defined by TESTMODE pin. If TESTMODE is left open or pulled HIGH, this pin functions as JTAG MODE SELECT input. If TESTMODE is pulled LOW, this pin acts as configuration input. CFG3 23 input Behavior defined by TESTMODE pin. If TESTMODE is left open or pulled HIGH, this pin functions as JTAG TEST DATA INPUT. If TESTMODE is pulled LOW, this pin acts as configuration input. CFG4 27 I/O Behavior defined by TESTMODE pin value. If TESTMODE is left open or pulled HIGH, this pin functions as JTAG TEST DATA OUTPUT. If TESTMODE is pulled LOW, this pin acts as configuration input. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 8 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications Table 3. Pin description …continued Symbol Pin Type Description MS_SDA 24 open-drain (I2C) data input/output I2C-bus data signal connection to I2C-bus master or slave. Pulled up by external resistor. MS_SCL 25 I2C-bus clock signal connection to I2C-bus master or slave. Pulled up by open-drain (I2C) clock input/output external resistor. n.c. 55 - not connected; reserved. EPS_N 56 input Can be left open or pulled HIGH for 3.3 V supply only option relying on internal regulator for 1.8 V generation. Should be pulled down to GND for dual supply (3.3 V/1.8 V) option. Supply, ground and decoupling VDD(3V3) 13, 14, power 38, 50 3.3 V supply input. VDD(1V8) 6, 45 power 1.8 V supply input. VDD(1V8) 19 power 1.8 V regulator supply output. n.c. 15, 16 power Not connected. GND 3 power Ground. GNDREG 17, 18 power Ground for regulator. GND center pad power The center pad must be connected to motherboard GND plane for both electrical ground and thermal relief. 8. Functional description PTN3460I is an (Embedded) DisplayPort to LVDS bridge IC that processes the incoming DisplayPort (DP) stream, performs DP to LVDS protocol conversion and transmits processed stream in LVDS format. Refer to Figure 2 “Block diagram of PTN3460I”. The PTN3460I consists of: • DisplayPort receiver • LVDS transmitter • System control and operation The following sections describe individual sub-systems and their capabilities in more detail. 8.1 DisplayPort receiver PTN3460I implements a DisplayPort receiver consisting of up to 2-lane Main Link and AUX channel. PTN3460I implements a high-performance Auto Receive Equalizer and Clock Data Recovery (CDR) algorithm, with which it identifies and selects an optimal operational setting for given channel environment. Given that the device is targeted primarily for embedded Display connectivity, both Display Authentication and Copy Protection Method 3a (Alternate Scrambler Seed Reset) and Method 3b (Enhanced Framing) are supported, as per eDP 1.2. The PTN3460I DPCD registers can be accessed by DP source through AUX channel. It supports both Native AUX transactions and I2C-over-AUX transactions. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 9 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications Native AUX transactions are used to access PTN3460I DisplayPort Configuration Data (DPCD) registers (for example, to facilitate Link training, check error conditions) and I2C-over-AUX transactions are used to perform any required access to DDC bus (for example, EDID reads). Given that the HPDRX pin is internally connected to GND through an integrated pull-down resistor (> 100 k), the DP source will see HPDRX pin as LOW indicating that the DisplayPort receiver is not ready when the device is not powered. This helps avoid raising false events to the source. After power-up, PTN3460I continues to drive HPDRX pin LOW until completion of internal initialization. After this, PTN3460I generates HPD signal to notify DP source and take corrective action(s). 8.1.1 DP Link PTN3460I is capable of operating either in DP 2-lane or 1-lane mode. DP 1-lane or 2-lane mode is selected through configuration pin CFG3. See Table 4 for more details. Table 4. CFG3 configuration options Configuration input setting DP lane selection LOW 2-lane DP configuration HIGH 1-lane DP configuration 8.1.2 DPCD registers DPCD registers are described in VESA DisplayPort v1.1a/1.2a specifications in detail and PTN3460I supports DPCD version 1.2. PTN3460I configuration registers can be accessed through DP AUX channel from the GPU/CPU, if required. They are defined under vendor-specific region starting at base address 0x00510h. So any configuration register can be accessed at DPCD address obtained by adding the register offset and base address. PTN3460I supports down spreading on DP link and this is reflected in DPCD register MAX_DOWNSPREAD at address 0003h. Further, the DP source could control down spreading and inform PTN3460I via DOWNSPREAD_CTRL register at DPCD register 00107h. The key aspect is that the system designer must take care that the Input video payload fits well within both DP link bandwidth and LVDS bandwidth (for a given pixel frequency, SSC depths) when clock spreading is enabled. Also, another aspect for the system designer is to ensure LVDS (panel) TCONs are capable of handling SSC modulated LVDS signaling. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 10 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 8.2 LVDS transmitter The LVDS interface can operate either in Single or Dual LVDS Bus mode at pixel clock frequencies over the range of 6 MHz to 112 MHz and color depths of 18 bpp or 24 bpp. Each LVDS bus consists of 3/4 differential data pairs and one clock pair. PTN3460I can packetize RGB video data, HSYNC, VSYNC, DE either in VESA or JEIDA format. To enable system EMI reduction, the device can be programmed for center spreading of LVDS channel clock outputs. The LVDS interface can be flexibly configured using multi-level configuration pins (CFG1, CFG2) or via register interface. The configuration pins and the corresponding definitions are described in Table 5 and Table 6. Nevertheless, as the configuration pins are designed for general purpose, their definitions can be modified and they can be used for any other purposes. However, this can be achieved through firmware upgrade only. Table 5. Configuration input setting Number of LVDS links LOW single LVDS bus HIGH dual LVDS bus Table 6. PTN3460I Product data sheet CFG1 configuration options CFG2 configuration options 3-level configuration input setting Data format Number of bits per pixel (bpp) LOW VESA 24 bpp OPEN JEIDA 24 bpp HIGH JEIDA or VESA 18 bpp All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 11 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications The VESA and JEIDA data format definitions are described in Table 7 to Table Table 13. Table 7. LVDS single bus, 18 bpp, VESA or JEIDA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS odd differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 LVDS odd differential channel C DE VSYNC HSYNC bit 5 bit 4 bit 3 bit 2 Table 8. LVDS single bus, 24 bpp, VESA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS odd differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 4 bit 3 bit 2 bit 6 bit 7 bit 6 LVDS odd differential channel C DE VSYNC HSYNC bit 5 LVDS odd differential channel D don’t care bit 7 bit 6 bit 7 Table 9. LVDS dual bus, 18 bpp, VESA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS odd differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 LVDS odd differential channel C DE VSYNC HSYNC bit 5 bit 4 bit 3 bit 2 LVDS even differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS even differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 LVDS even differential channel C DE VSYNC HSYNC bit 5 bit 4 bit 3 bit 2 Table 10. LVDS dual bus, 24 bpp, VESA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS odd differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 4 bit 3 bit 2 LVDS odd differential channel C DE VSYNC HSYNC bit 5 LVDS odd differential channel D don’t care bit 7 bit 6 bit 7 bit 6 bit 7 bit 6 LVDS even differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS even differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 4 bit 3 bit 2 bit 6 bit 7 bit 6 LVDS even differential channel C DE VSYNC HSYNC bit 5 LVDS even differential channel D don’t care bit 7 bit 6 bit 7 PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 12 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications Table 11. LVDS single bus, 24 bpp, JEIDA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 2 bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 LVDS odd differential channel B bit 3 bit 2 bit 7 bit 6 bit 5 bit 4 bit 3 LVDS odd differential channel C DE VSYNC HSYNC bit 7 bit 6 bit 5 bit 4 LVDS odd differential channel D don’t care bit 1 bit 0 bit 1 bit 0 bit 1 bit 0 Table 12. LVDS dual bus, 18 bpp, JEIDA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS odd differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 LVDS odd differential channel C DE VSYNC HSYNC bit 5 bit 4 bit 3 bit 2 LVDS even differential channel A bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 LVDS even differential channel B bit 1 bit 0 bit 5 bit 4 bit 3 bit 2 bit 1 LVDS even differential channel C DE VSYNC HSYNC bit 5 bit 4 bit 3 bit 2 Table 13. LVDS dual bus, 24 bpp, JEIDA data packing Channel Bit position 6 5 4 3 2 1 0 LVDS odd differential channel A bit 2 bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 LVDS odd differential channel B bit 3 bit 2 bit 7 bit 6 bit 5 bit 4 bit 3 LVDS odd differential channel C DE VSYNC HSYNC bit 7 bit 6 bit 5 bit 4 LVDS odd differential channel D don’t care bit 1 bit 0 bit 1 bit 0 bit 1 bit 0 LVDS even differential channel A bit 2 bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 LVDS even differential channel B bit 3 bit 2 bit 7 bit 6 bit 5 bit 4 bit 3 LVDS even differential channel C DE VSYNC HSYNC bit 7 bit 6 bit 5 bit 4 LVDS even differential channel D don’t care bit 1 bit 0 bit 1 bit 0 bit 1 bit 0 PTN3460I delivers great flexibility by supporting more programmable options via I2C-bus or AUX interface. Please refer to Section 8.3.11 for more details. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 13 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 8.3 System control and operation With its combination of embedded microcontroller, non-volatile memory, DPCD AUX and I2C-bus interfaces, PTN3460I delivers significant value for customer applications by providing higher degree of control and programmability. By default, all user controllable registers can be accessed through DPCD AUX interface. This interface is always enabled. This AUX interface delivers seamless access of PTN3460I registers to system/platform (GPU) firmware driver. Nevertheless, use of I2C-bus interface for configuring PTN3460I is left to the choice of system integrator. DEV_CFG (pin 12) sets up I2C-bus configuration mode: • Pull-down resistor to GND — PTN3460I operates as I2C-bus slave, low address (0x40h) • Open — PTN3460I operates as I2C-bus slave, high address (0xC0h) • Pull-up resistor to VDD(3V3) — PTN3460I operates as I2C-bus master capable of reading from external EEPROM Remark: PTN3460I I2C pins are not failsafe and cannot be connected to the SMBus if the SMBus has active communications during VDD33 supply switch ON. In the application there MUST be no MS_I2C traffic during supply rise-up. 8.3.1 Reset and power-on initialization The device has a built-in reset circuitry that generates internal reset signal after power-on. All the internal registers and state machines are initialized and the registers take default values. In addition, PTN3460I has a dedicated control pin RST_N. This serves the same purpose as power-on reset, but without power cycling of the device/platform. PTN3460I starts up in a default condition after power-on or after RST_N is toggled from LOW to HIGH. The configuration pins are sampled at power-on, or external reset, or when returning from Deep Sleep. PTN3460I has a built-in reset circuitry that generates internal reset signal after power-on. All the internal registers and state machines are synchronously initialized and the registers take default values. Though PTN3460I is designed NOT to need the RST_N pin, RST_N is still provided. This serves the same purpose as power-on reset, but without power cycling of the device/platform. It is good practice to provide for RST_N control if EPS_N is LOW (external 1.8 V supply is used). In case RST_N is used, it must be released after all supplies are within operating conditions. PTN3460I starts up in a default condition after power-on or after RST_N is toggled from LOW to HIGH. The configuration pins are sampled at power-on and when there is change of state (for example, from Power saving state to Active state). Device start-up time from power-on and RST_N = HIGH is 90 ms max. Remark: Driving RST_N HIGH is not possible and forbidden during power-up, because the ESD diodes will clamp the signal to the VDDIO+0.6 V. RST_N pin should be left at Tri-state level during power-up. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 14 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 1.7 V VDD(1V8) < 2.5 μs on-chip reset_n td(rstn_i2chz) < 20 μs I2C pins tstartup < 90 ms HPD normal operation aaa-014260 Fig 4. Start-up behavior with RST_N and PD_N unconnected 8.3.2 Power-down for Ultra Power Save PTN3460I goes into Deep power-saving when both PD_N and RST_N are LOW. This will trigger a power-down sequence. PD_N and RST_N can be controlled by GPIO pins of system microcontroller. To leave Deep power-saving state, the system needs to drive PD_N back to HIGH, then issue a RST_N pulse for at least 10 s. If PD_N pin is open, the device will not enter Deep power-saving state. Once the device is in Deep power-saving condition, the HPDRX pin will go LOW automatically and this can be used by the system to remove the 3.3 V supply, if required. PTN3460I will not respect the Panel power-down sequence if PD_N is asserted LOW while video is being streamed to the display; the system is not supposed to toggle PD_N and RST_N pins asynchronously while the LVDS output is streaming video to the display panel, but instead follow the panel powering sequence as described in Section 8.3.5. The time between PD_N going HIGH and HPD raised HIGH by PTN3460I is also 90 ms max. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 15 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 1.7 V > 2.5 μs VDD(1V8) normal operation PD_N power saving mode > 10 μs td(rstn_i2chz) RST_N < 20 μs I2C pins tpwrsave tstartup < 90 ms HPD tstartup < 90 ms < 90 ms normal operation aaa-014261 Fig 5. Start-up behavior with RST_N and PD_N sequence when used 8.3.3 Use GPIOs to control PD_N and RST_N from system side One example to control PD_N and RST_N pulses from system side is shown below: • • • • PTN3460I Product data sheet Assert PD_N (make it LOW) Assert RST_N (make it LOW) De-assert PD_N (make it HIGH) De-assert RST_N (make it HIGH) All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 16 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 8.3.4 LVDS panel control PTN3460I implements eDPv1.2 specific DPCD registers that concern panel power, backlight and PWM controls and the DP source can issue AUX commands to initiate panel power-up/down sequence as required. Also, PTN3460I supports LVDS panel control pins — backlight enable, panel power enable and PWM — that can be set via AUX commands. • PVCCEN pin — the signal output is set based on SET_POWER DPCD register 00600h and SET_POWER_CAPABLE bit of EDP_GENERAL_CAPABILITY_REGISTER_1 DPCD register 00701h and detection and handling of video data stream by PTN3460I • BKLTEN pin — the signal output is set based on BACKLIGHT_PIN_ENABLE_CAPABLE bit of EDP_GENERAL_CAPABILITY_REGISTER_1 DPCD register 00701h and BACKLIGHT_ENABLE bit of EDP_DISPLAY_CONTROL_REGISTER DPCD register 00720h • PWMO pin — the PWM signal generated by PTN3460I based on controls set in DPCD registers. In addition, PTN3460I can pass through PWM signal from eDP source as well. All the panel control enable and signal outputs from PTN3460I are aligned with panel power-on sequence timing including LVDS video output generation. It is important to note that the Panel power must be delivered by the system platform and it should be gated by PVCCEN signal. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 17 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 8.3.5 Panel power sequencing Figure 6 illustrates an example of panel power-up/power-down sequence for PTN3460I. Depending on the source behavior and PTN3460I firmware version, the powering sequence/timing could have some slight differences. T12 > 500 ms VDD(3V3) LCDVCC black video from PTN3460I T2 < 50 ms PVCCEN LVDS interface T5 < 50 ms video from source SINK_STATUS HPDRX eDP AUX channel eDP Main Link display backlight AUX channel operational Link Training idle valid video data disabled enabled T3 > 200 ms to 1000 ms video or IDLE stream from DP source T4 > 200 ms aaa-009844 T2: Time interval between panel power enable signal (PVCCEN) going HIGH and video data/clock driven on LVDS interface. T3: Time interval between valid video data/clock on LVDS interface and backlight enable signal (BKLTEN) going HIGH. T4: Time interval between backlight enable signal (BKLTEN) made LOW and stopping of video data/clock on LVDS interface. T5: Time interval between stopping of video data/clock on LVDS interface and panel power enable signal (PVCCEN) made LOW. T12: Time interval for which PVCCEN is held LOW before it can be made HIGH. Fig 6. Panel power-up/power-down sequence example When working with eDP capable DP sources, PTN3460I supports the following (for specific sequence, refer to Figure 6): • After power-on/startup, HPDRX is asserted HIGH, DP source will start AUX communication for initialization, perform Link Training and starts the video data stream. Once presence of video data is detected, PTN3460I will assert PVCCEN to HIGH, synchronize to video stream, output LVDS data and assert rise the Sink_status lock as indicated in DPCD register (0x00205h). PTN3460I will wait for Backlight enabling delay (T3) to avoid visual artifacts and program the BKLTEN HIGH. • While transitioning out of Active state by receiving DPCD 0x600 to set PTN3460I in D3 mode, PTN3460I will disable BKLTEN prior to cutting off Video streaming to avoid visible artifacts following specific panel specifications. PTN3460I will assert PVCCEN to LOW after T5 delay as long as either if the video stream is stopped or video synchronization is lost. This is to avoid driving the LVDS panel with illegal stream for long periods of time. It is good practice for sources to keep video data or at least DP-idle stream active during T4 + T5. • When PTN3460I is in Low-power state (DisplayPort D3 power state), the LVDS differential I/Os are weakly pulled down to 0 V. In this state, PVCCEN and BKLTEN are pulled LOW. • When PD_N is LOW, which sets PTN3460I in Deep power-saving state, the BKLTEN pin is set to LOW. LVDS differential I/Os are pulled LOW via the weak pull-downs. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 18 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 8.3.6 Termination resistors The device provides integrated and calibrated 50  termination resistors on both DisplayPort Main Link lanes and AUX channel. 8.3.7 Reference clock input PTN3460I does not require an external clock. It relies fully on the clock derived internally from incoming DP stream or on-chip clock generator. 8.3.8 Power supply PTN3460I can be flexibly supplied with either 3.3 V supply only or dual supplies (3.3 V/1.8 V). When supplied with 3.3 V supply only, the integrated regulator is used to generate 1.8 V for internal circuit operation. In this case, the EPS_N pin must be pulled HIGH or left open. For optimal power consumption, dual supply option (3.3 V and 1.8 V) is recommended. VDD(3V3) 3.0 V tstartup(VDD1V8) < 30 μs VDD(1V8) 1.7 V aaa-014262 Fig 7. Internal regulator start-up • EPS_N pin not connected • VDD(1V8) total decoupling Cdecap < 8 F total The 8 F is 4.7 F + 100 nF on pin 19 + 100 nF on pin 45 + 2.2 F + 100 nF on pin 6 + 10 % 8.3.9 Power-on reset Figure 8 shows a possible curve of the regulated VDD(1v8) voltage with dips at t2 to t3 and t4 to t5. The on-chip reset_n (active LOW) starts active at t0. At t1, the voltage gets higher than the Vtrip(H) level and if this condition is maintained for a period longer than Thigh, a delay element will add another Tporp before the on-chip reset_n is de-asserted. If the voltage drops below Vtrip(L) for a period longer than Tlow, the reset_n is re-asserted. If the supply dip is shorter (eg. t4 to t5) the internal reset is not asserted. This means that voltage drops less than Tlow must be avoided in the system. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 19 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications VDD(1V8) Vtrip(H) Vtrip(L) supplies t0 t1 Thigh t2 Tporp t3 Tlow Thigh t4 t5 [time] Tporp on-chip reset_n [time] aaa-014263 Fig 8. Timing diagram of on-chip power-on reset generator 8.3.10 Power management In tune with the system application needs, PTN3460I implements aggressive techniques to support system power management and conservation. The device can exist in one of the three different states as described below: • Active state when the device is fully operational. • Low-power state when DP source issues AUX SET_POWER command on DPCD register 00600h. In this state, AUX and HPD circuits are operational but the main DP Link and LVDS Bus are put to high-impedance condition. The device will transition back to Active state when the DP source sets the corresponding DPCD register bits to ‘DisplayPort D0/Normal Operation mode’. The I2C-bus interface will not be operational in this state. • Deep power-saving state: In this state PTN3460I is put to ultra low-power condition. This is effected when PD_N is LOW. To get back to Active state, PD_N must be made HIGH. The external interfaces (like I2C, AUX, DP, LVDS, configuration pins) will not be operational. 8.3.11 Register interface — control and programmability PTN3460I has a register interface that can be accessed by CPU/GPU or System Controller to choose settings suitably for the System application needs. The registers can be read/written either via DP AUX or I2C-bus interface. It is left to system integrator choice to use an interface to configure PTN3460I. PTN3460I provides greater level of configurability of certain parameters (e.g., LVDS output swing, spreading depth, etc.) via registers beyond what is available through pins. The register settings override the pin values. All registers must be configured during power-on initialization after HPDRX is HIGH. The registers and bit definitions are described in “I2C-bus utility and programming guide for firmware and EDID update” PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 20 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 8.3.12 EDID handling The DP source issues EDID reads using I2C-over-AUX transactions and PTN3460I, in turn, reads from the panel EDID ROM and passes back to the source. To support seamless functioning of panels without EDID ROM, the PTN3460I can be programmed to emulate EDID ROM and delivers internally stored EDID information to the source. Given that EDID is specific to panels, PTN3460I enables system integrator to program EDID information into embedded memory through DP AUX and I2C-bus interfaces. The supported EDID ROM emulation size is 896 bytes (seven EDID data structures, each of 128 bytes). EDID ROM emulation bit is programmed in the configuration table inside the flash memory. It can also be configured through pin setting. FW will read in the pin settings and overwrite the configuration table settings. CFG4 pin is used to turn EDID emulation bit ON/OFF. Table 14. CFG4 configuration options Configuration input setting pull-down pull-up [1] resistor[1] resistor[1] to GND to VDD(3V3) Emulation bit on/off selection Emulation ON, EDID is read from internal flash Emulation OFF, EDID is read from DDC bus Pull-up/down resistor value in the range of 1 k to 10 k. 9. Application design-in information Figure 9 illustrates PTN3460I usage in a system context. The eDP inputs are connected to DP source port on CPU/GPU and the LVDS outputs are connected to LVDS panel TCON. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 21 of 42 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors PTN3460I 1 (optional) HPD pull-down is integrated into R1 silicon (400 kΩ) 100 kΩ DP_HPD C15 1 2 0.1 μF DP_L1n DP_LANE1P C16 1 2 0.1 μF DP_L1p DP_LANE0N C17 1 2 0.1 μF DP_L0n DP_LANE0P C18 1 2 0.1 μF DP_L0p AUXP C19 1 2 0.1 μF DP_AUXP AUXN MS_SCL MS_SDA C20 1 2 0.1 μF DP_AUXN Application diagram 1V8_REG C13 4.7 μF 1 1 LVSCE_N LVSCE_P LVSCKE_N LVSCKE_P PVCCEN LVSDE_N LVSDE_P DDC_SDA DDC_SCL LVSDO_N LVSDO_P LVSAE_N LVSAE_P LVSBE_N LVSBE_P LVSCE_N LVSCE_P LVSCKE_N LVSCKE_P PVCCEN LVSDE_N LVSDE_P DDC_SDA DDC_SCL BKLTEN PWMO option DEV_CFG 1 R2 2 10 kΩ open: I2C-bus slave, high address (0C0h) LOW: I2C-bus slave (040h) +3V3 R3 EPS_N 1 PD_N 10 kΩ 1 R4 2 C12 0.1 μF 2 LVSDO_N LVSDO_P 56 55 54 53 52 51 50 49 48 47 46 45 44 43 LVSAE_N LVSAE_P LVSBE_N LVSBE_P option 2 DP_LANE1N 42 41 40 39 38 37 36 35 34 33 32 31 30 29 C4 0.1 μF 2 configuration options CFG1 CFG2 CFG3 CFG4 10 kΩ TESTMODE 1 R5 2 10 kΩ aaa-009845 PTN3460I 22 of 42 © NXP Semiconductors N.V. 2016. All rights reserved. Fig 9. optional 2 eDP port or PCH port D DP_HPD LVSCO_N LVSCO_P LVSCKO_N LVSCKO_P 2 C14 1 μF (25 V) GND 1 C11 0.01 μF center pad 2 1 1 C9 1 μF (25 V) C10 0.01 μF 2 C8 0.47 μF +3V3_REG 1 2 2 2 1 1 L3 FB TESTMODE CFG1 CFG2 CFG3 MS_SDA MS_SCL BKLTEN CFG4 PWMO +3V3 PTN3460I 1 PD_N DP_HPD DEV_CFG 2 DP_L1p DP_L1n LVSAE_N LVSAE_P LVSBE_N LVSBE_P VDD(3V3) LVSCE_N LVSCE_P LVSCKE_N LVSCKE_P PVCCEN LVSDE_N LVSDE_P DDC_SDA DDC_SCL n.c. n.c. GNDREG GNDREG VDD(1V8) TESTMODE CFG1 CFG2 CFG3 MS_SDA MS_SCL BKLTEN CFG4 PWMO DP_L0p DP_L0n AUX_N AUX_P GND DP0_P DP0_N VDD(1V8) DP1_P DP1_N RST_N PD_N HPDRX DEV_CFG VDD(3V3) VDD(3V3) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1 2 2 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 C7 DP_AUXp 0.01 μF C3 0.1 μF LVSCO_N LVSCO_P LVSCKO_N LVSCKO_P eDP to LVDS bridge for industrial and embedded applications Rev. 2.1 — 16 August 2016 All information provided in this document is subject to legal disclaimers. C6 2.2 μF 1 DP_AUXn C5 0.1 μF 1 2 EPS_N n.c. LVSAO_N LVSAO_P LVSBO_N LVSBO_P VDD(3V3) LVSCO_N LVSCO_P LVSCKO_N LVSCKO_P VDD(1V8) LVSDO_N LVSDO_P U1 1V8_DP 1 1 L2 FB C2 0.1 μF 2 1V8_REG 1 1 +3V3_IO EPS_N 1V8_REG 2 C1 2.2 μF LVSAO_N LVSAO_P LVSBO_N LVBSO_P +3V3_IO 1 L1 FB LVSAO_N LVSAO_P LVSBO_N LVBSO_P 2 +3.3 V 2 Product data sheet LVDS panel and backlight inverter PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 10. Limiting values Table 15. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDD supply voltage VI input voltage Tstg storage temperature VESD Conditions electrostatic discharge voltage Min Max Unit [1] 0.3 +4.6 V 3.3 V CMOS inputs [1] 0.3 VDD + 0.5 V 65 +150 C HBM [2] - 8000 V CDM [3] - 1000 V [1] All voltage values, except differential voltages, are with respect to network ground terminal. [2] Human Body Model: ANSI/EOS/ESD-S5.1-1994, standard for ESD sensitivity testing, Human Body Model – Component level; Electrostatic Discharge Association, Rome, NY, USA. [3] Charged-Device Model: ANSI/EOS/ESD-S5.3-1-1999, standard for ESD sensitivity testing, Charged-Device Model – Component level; Electrostatic Discharge Association, Rome, NY, USA. 11. Recommended operating conditions Table 16. Operating conditions Over operating free-air temperature range, unless otherwise noted. Symbol Parameter Min Typ Max Unit VDD(3V3) supply voltage (3.3 V) 3.0 3.3 3.6 V VDD(1V8) supply voltage (1.8 V) 1.7 1.8 1.9 V VI input voltage 3.3 V CMOS inputs 0 3.3 3.6 V open-drain I/O with respect to ground (e.g., DDC_SCL, DDC_SDA, MS_SDA, MS_SCL) 0 5 5.5 V operating in free air 40 - +85 C Tamb PTN3460I Product data sheet Conditions ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 23 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 12. Characteristics 12.1 Device characteristics Table 17. Device characteristics Over operating free-air temperature range, unless otherwise noted. Symbol Parameter Conditions Min Typ Max Unit tstartup start-up time device start-up time from power-on and RST_N = HIGH; supply voltage within operating range to specified operating characteristics - - 90 ms tw(rst) reset pulse width device is supplied with valid supply voltage 10 - - s td(rst) reset delay time[1] device is supplied with valid supply voltage - - 90 ms td(pwrsave-act) delay time from power-save to active time between PD_N going HIGH and HPD raised HIGH by PTN3460I; RST_N is HIGH. - - 90 ms Device is supplied with valid supply voltage. [1] Time for device to be ready after rising edge of RST_N. 12.2 Power consumption Table 18. Power consumption At operating free-air temperature of 25 C and under nominal supply value (unless otherwise noted). Symbol Pcons [1] Parameter power consumption Conditions Single supply mode EPS_N = HIGH or open Dual supply mode EPS_N = LOW Unit Min Typ Max Min Typ Max Active mode; 1440  900 at 60 Hz; 24 bits per pixel; dual LVDS bus [1] - 430 - - 290 - mW Active mode; 1600  900 at 60 Hz; 24 bits per pixel; dual LVDS bus [1] - 448 - - 305 - mW Active mode; 1920  1200 at 60 Hz; 24-bits per pixel; dual LVDS bus [1] - 570 - - 380 - mW D3 mode/Power-saving mode; when PTN3460I is set to Power-saving mode via ‘SET_POWER’ AUX command by eDP source; AUX and HPDRX circuitry are only kept active - 27 - - 15 - mW Deep power-saving/Shutdown mode; when PD_N is LOW and the device is supplied with valid supply voltage - 5 - - 2 - mW For Active mode power consumption, LVDS output swing of 300 mV is considered. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 24 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 12.3 DisplayPort receiver characteristics Table 19. DisplayPort receiver main channel characteristics Over operating free-air temperature range (unless otherwise noted). Symbol UI Parameter Conditions unit interval fDOWN_SPREAD link clock down spreading CRX AC coupling capacitor VRX_DIFFp-p differential input peak-to-peak voltage Min Typ Max Unit high bit rate (2.7 Gbit/s per lane) [1] - 370 - ps reduced bit rate (1.62 Gbit/s per lane) [1] - 617 - ps [2] 0 - 0.5 % 75 - 200 nF at receiver package pins high bit rate (2.7 Gbit/s per lane) [3] 120 - - mV reduced bit rate (1.62 Gbit/s per lane) [3] 40 - - mV RX DC common mode voltage [4] 0 - 2.0 V RX short-circuit current limit [5] - - 50 mA fRX_TRACKING_BW jitter tracking bandwidth [6] Geq(max) maximum equalization gain VRX_DC_CM IRX_SHORT at 1.35 GHz 20 - - MHz - 15 - dB [1] Range is nominal 350 ppm. DisplayPort channel RX does not require local crystal for channel clock generation. [2] Up to 0.5 % down spreading is supported. Modulation frequency range of 30 kHz to 33 kHz is supported. [3] Informative; refer to Figure 10 for definition of differential voltage. [4] Common-mode voltage is equal to Vbias_RX voltage. [5] Total drive current of the input bias circuit when it is shorted to its ground. [6] Minimum CDR tracking bandwidth at the receiver when the input is repetition of D10.2 symbols without scrambling. VD+ VCM VDIFF_PRE VDIFF VD− 002aaf363 pre-emphasis = 20Log(VDIFF_PRE / VDIFF) Fig 10. Definition of pre-emphasis and differential voltage PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 25 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 12.4 DisplayPort AUX characteristics Table 20. DisplayPort AUX characteristics Symbol UI tjit(cc) VAUX_DIFFp-p Parameter Conditions Min Typ Max Unit unit interval [1] 0.4 0.5 0.6 s cycle-to-cycle jitter time transmitting device [2] - - 0.04 UI receiving device [3] - - 0.05 UI transmitting device [4] 0.39 - 1.38 V receiving device [4] 0.32 - 1.36 V AUX differential peak-to-peak voltage - 100 -  [5] 0 - 2.0 V [6] - - 0.3 V AUX short-circuit current limit [7] - - 90 mA AUX AC coupling capacitor [8] 75 - 200 nF RAUX_TERM(DC) AUX CH termination DC resistance VAUX_DC_CM informative AUX DC common-mode voltage VAUX_TURN_CM AUX turnaround common-mode voltage IAUX_SHORT CAUX [1] Results in the bit rate of 1 Mbit/s including the overhead of Manchester II coding. [2] Maximum allowable UI variation within a single transaction at connector pins of a transmitting device. Equal to 24 ns maximum. The transmitting device is a source device for a request transaction and a sink device for a reply transaction. [3] Maximum allowable UI variation within a single transaction at connector pins of a receiving device. Equal to 30 ns maximum. The transmitting device is a source device for a request transaction and a sink device for a reply transaction. [4] VAUX_DIFFp-p = 2  VAUX_P  VAUX_N. [5] Common-mode voltage is equal to Vbias_TX (or Vbias_RX) voltage. [6] Steady-state common-mode voltage shift between transmit and receive modes of operation. [7] Total drive current of the transmitter when it is shorted to its ground. [8] The AUX channel AC-coupling capacitor placed both on the DisplayPort source and sink devices. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 26 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 12.5 LVDS interface characteristics Table 21. LVDS interface characteristics Symbol Parameter Conditions Min Typ Max Unit Vo(dif)(p-p) peak-to-peak differential output voltage RL = 100 ; CFG4 pin is open and LVDS interface control 2 register in default value 250 300 350 mV Vo(dif) differential output voltage variation RL = 100 ; change in differential output voltage between complementary output states - - 50 mV Vcm common-mode voltage RL = 100  1.125 1.2 1.375 V IOS output short-circuit current RL = 100  - - 24 mA IOZ OFF-state output current output 3-state circuit current; RL = 100 ; LVDS outputs are 3-stated; receiver biasing at 1.2 V - - 20 A tr rise time RL = 100 ; from 20 % to 80 % - - 390 ps tf fall time RL = 100 ; from 80 % to 20 % - - 390 ps tsk skew time intra-pair skew between differential pairs - - 50 ps inter-pair skew between 2 adjacent LVDS channels - - 200 ps minimum modulation depth - 0 - % maximum modulation depth - 2.5 - % 30 - 100 kHz m modulation index for center spreading modulation frequency fmod center spreading 12.6 Control inputs and outputs Table 22. Control input and output characteristics Symbol Parameter Conditions Min Typ Max Unit Signal output pins — PVCCEN, BKLTEN, HPDRX, PWMO VOH HIGH-level output voltage IOH = 2 mA 2.4 - - V VOL LOW-level output voltage IOL = 2 mA - - 0.4 V Control input pins — PD_N, TESTMODE, DEV_CFG, CFG[4:1] VIH HIGH-level input voltage 0.7VDD(3V3) - - V VIL LOW-level input voltage - - 0.3VDD(3V3) V Control input pin — EPS_N VIH HIGH-level input voltage 0.7VDD(3V3) - - V VIL LOW-level input voltage - - 0.2VDD(3V3) V DDC_SDA, DDC_SCL, MS_SDA, MS_SCL[1] VIH HIGH-level input voltage 0.7VDD(3V3) - 5.25 V VIL LOW-level input voltage - - 0.3VDD(3V3) V IOL LOW-level output current 3.0 - - mA [1] static output; VOL = 0.4 V For DDC_SCL, DDC_SDA, MS_SCL, MS_SDA characteristics, please refer to UM10204, “I2C-bus specification and user manual” (Ref. 6). PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 27 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 12.7 RST_N Table 23. RST_N characteristics Over operating free-air temperature range, unless otherwise noted. Symbol Parameter Conditions Min Typ Max Unit V Input characteristics VIH HIGH-level input voltage 0.7  VDD(3V3) - - VIL LOW-level input voltage - - 0.3  VDD(3V3) V 25 55 90 Ipu(RST_N) pull-up current on pin RST_N VI = 0 V A 12.8 On-chip power-on reset Table 24. On-chip power-on reset characteristics Symbol Parameter Min Typ Max Unit Thigh time VDD(1V8) has to be above Vtrip(H) before reset_n will be ‘1’ - - 2 s Tlow time VDD(1V8) has to be below Vtrip(L) before reset_n will be ‘0’ - - 11 s Tporp minimal time reset_n will be ‘1’ after VDD(1V8) > Vtrip(H) 0.2 0.32 0.5 s Vtrip(H) HIGH trip level 1.0 1.2 1.6 V Vtrip(L) LOW trip level 0.95 1.1 1.4 V s Td(rstn_i2chz) delay time for I2C pins (SCL or SDA) to get into Hi impedance state from the rising edge of RST_N or internal reset_n - - 20[1] Tstartup time delay from RST_N or internal reset_n signal and rising edge of HPD - - 90[2] ms Tpwrsave time delay from falling edge of PD_N and actual HPD falling edge while entering power saving mode - - 90[3] s Tw(rst) minimum requirement for external RST_N reset pulse width 10 - - s Tstartup(vdd1v8) internal 1.8 V regulator delay from VDD(3V3) within specification to VDD(1V8) within specification - - 30[4] s [1] This is based on simulations. In all cases seen in measurement this delay is actually much shorter. [2] This is a firmware deadline and the typical value can change with a FW update. The max timing has to be respected and checked at any FW update. [3] This delay is also defined by firmware. The FW polls for DP_N pin state at periods close to 50 ms and this makes the response fluctuate. [4] Based on worst-case measurements starting the regulator after VDD(3V3) is 3.0 V. In practical case the regulator starts at much lower supply level and this value can be considered 0 if input supply has rise time > 1 ms. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 28 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 13. Package outline HVQFN56: plastic thermal enhanced very thin quad flat package; no leads; 56 terminals; body 7 x 7 x 0.85 mm D B SOT949-2 A A1 A A3 terminal 1 index area E detail X e1 C v w b L 15 28 C A B A y y1 C 29 14 e e2 Eh 1/2 e 1 terminal 1 index area 42 56 43 e X 1/2 e Dh 0 5 mm scale Dimensions Unit mm A(1) A1 max 1.00 0.05 nom 0.85 0.02 min 0.80 0.00 A3 b D Dh E Eh e e1 e2 L v 0.2 0.30 0.21 0.18 7.1 7.0 6.9 4.85 4.70 4.55 7.1 7.0 6.9 4.05 3.90 3.75 0.4 5.2 5.2 0.5 0.4 0.3 0.1 w y 0.05 0.05 y1 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline version SOT949-2 References IEC JEDEC JEITA sot949-2_po European projection Issue date 11-09-06 11-09-16 MO-220 Fig 11. Package outline SOT949-2 (HVQFN56) PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 29 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 14. Packing information 14.1 SOT949-2 (HVQFN56); Reel dry pack, SMD, 13"; Q2/T3 turned product orientation; Orderable part number ending ,528 or MP; Ordering code (12NC) ending 528 14.1.1 Packing method %DUFRGHODEHO 'U\DJHQW %DJ (6'SULQW 5HODWLYHKXPLGLW\ LQGLFDWRU 0RLVWXUHFDXWLRQ SULQW (6'HPERVVHG 7DSH 5HHODVVHPEO\ %DUFRGHODEHO *XDUGEDQG 3ULQWHGSODQRER[ &RYHUWDSH 4$VHDO &DUULHUWDSH 6SDFHIRUDGGLWLRQDO ODEHO 3UHSULQWHG(6' ZDUQLQJ %DUFRGHODEHO 'U\SDFN,'VWLFNHU 3ULQWHGSODQRER[ DDD Fig 12. Reel dry pack for SMD Table 25. Dimensions and quantities Reel dimensions d  w (mm) [1] SPQ/PQ (pcs) [2] Reels per box Outer box dimensions l  w  h (mm) 330  16 4000 1 339  335  43 2000 [1] PTN3460I Product data sheet d = reel diameter; w = tape width. All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 30 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications [2] Packing quantity dependent on specific product type. View ordering and availability details at NXP order portal, or contact your local NXP representative. 14.1.2 Product orientation 47 47 SLQ 47 47 DDD DDD Quadrant designation. Pin 1 is in quadrant 2. Fig 13. Product orientation in carrier tape 14.1.3 Carrier tape dimensions 4 mm W K0 A0 B0 P1 T direction of feed 001aao148 Fig 14. Carrier tape dimensions Table 26. Carrier tape dimensions In accordance with IEC 60286-3. PTN3460I Product data sheet A0 (mm) B0 (mm) K0 (mm) T (mm) P1 (mm) W (mm) 7.3  0.1 7.3  0.1 1.10  0.1 0.30  0.05 12  0.1 16  0.3 All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 31 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 14.1.4 Reel dimensions A Z W2 B ØC ØD detail Z 001aao149 Fig 15. Schematic view of reel Table 27. Reel dimensions In accordance with IEC 60286-3. PTN3460I Product data sheet A [nom] (mm) W2 [max] (mm) B [min] (mm) C [min] (mm) D [min] (mm) 330 22.4 1.5 12.8 20.2 All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 32 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 14.1.5 Barcode label Fixed text Country of origin i.e. "Made in....." or "Diffused in EU [+] Assembled in...... Packing unit (PQ) identification 2nd traceability lot number* 2nd (youngest) date code* 2nd Quantity* Traceability lot number Date code With linear barcode Quantity With linear barcode Type number NXP 12NC With linear barcode NXP SEMICONDUCTORS MADE IN >COUNTRY< [PRODUCT INFO] (Q) QTY Optional product information* Re-approval date code* Origin code Product Manufacturing Code MSL at the Peak Body solder temperature with tin/lead* MSL at the higher lead-free Peak Body Temperature* 2D matrix with all data (including the data identifiers) HALOGEN FREE (30P) TYPE RoHS compliant (1P) CODENO Additional info if halogen free product Additional info on RoHS (33T) PUID: B.0987654321 (30T) LOT2 (31D) REDATE (30D) DATE2 (32T) ORIG (30Q) QTY2 (31T) PMC (31P) MSL/PBT (1T) LOT MSL/PBT (9D) DATE Lead-free symbol 001aak714 Fig 16. Example of typical box and reel information barcode label Table 28. PTN3460I Product data sheet Barcode label dimensions Box barcode label l  w (mm) Reel barcode label l  w (mm) 100  75 100  75 All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 33 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 15. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 15.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 15.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 34 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 15.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 17) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 29 and 30 Table 29. SnPb eutectic process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350  350 < 2.5 235 220  2.5 220 220 Table 30. Lead-free process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 17. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 35 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications temperature maximum peak temperature = MSL limit, damage level minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 17. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 36 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 16. Soldering: PCB footprint Footprint information for reflow soldering of HVQFN56 (SOT949-2) package SOT949-2 Hx Gx D 0.125 P 0.125 C SPx nSPy nSPx SPy Hy SPx tot Gy SLy By Ay Y SPx tot SLx X 0.24 Bx 0.19 Ax 0.85 0.9 occupied area solder paste deposit solder land solder land plus solder paste 0.25 0.5 detail Y Dimensions in mm P Ax Ay Bx By SLx SLy SPx SPy SPx tot SPy tot 0.4 8 8 6.2 6.2 4.7 4.7 0.7 0.7 Issue date detail X Recommended stencil thickness: 0.1 mm 3 3 C D nSPx nSPy Gx Gy Hx Hy 0.9 0.24 3 3 7.3 7.3 8.25 8.25 14-07-09 14-07-22 sot949-2_fr Fig 18. SOT949-2 PCB footprint PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 37 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 17. Abbreviations Table 31. PTN3460I Product data sheet Abbreviations Acronym Description AIO All In One AUX Auxiliary channel BIOS Basic Input/Output System bpp bits per pixel CDM Charged-Device Model CDR Clock Data Recovery CPU Central Processing Unit DDC Data Display Channel DP DisplayPort DPCD DisplayPort Configuration Data EDID Extended Display Identification Data eDP embedded DisplayPort EMI ElectroMagnetic Interference ESD ElectroStatic Discharge GPU Graphics Processor Unit HBM Human Body Model HBR High Bit Rate (2.7 Gbit/s) of DisplayPort specification HPD Hot Plug Detect signal of DisplayPort or LVDS interface I/O Input/Output I2C-bus Inter-Integrated Circuit bus IC Integrated Circuit LVDS Low-Voltage Differential Signaling NVM Non-Volatile Memory PCB Printed-Circuit Board POR Power-On Reset PWM Pulse Width Modulation (or Modulator) RBR Reduced Bit Rate (1.62 Gbit/s) of DisplayPort specification RGB Red/Green/Blue ROM Read-Only Memory Rx Receive SSC Spread Spectrum Clock TCON Timing CONtroller Tx Transmit UI Unit Interval VESA Video Electronics Standards Association All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 38 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 18. References [1] VESA DisplayPort standard — version 1, revision 1a; January 11, 2008 [2] VESA DisplayPort standard — version 1, revision 2a; March 2012 [3] VESA embedded DisplayPort standard — version 1.2; May 5, 2010 [4] VESA embedded DisplayPort standard — version 1.1, October 23, 2009 [5] ANSI/TIA/EIA-644-A-2001, Electrical characteristics of Low Voltage Differential Signaling (LVDS) Interface Circuits — approved: January 30, 2001 [6] UM10204, I2C-bus specification and user manual — NXP Semiconductors 19. Revision history Table 32. Revision history Document ID Release date Data sheet status Change notice Supersedes PTN3460I v.2.1 20160816 Product data sheet - PTN3460IBS v.2 - PTN3460IBS v.1 Modifications: PTN3460I v.2 Modifications: PTN3460IBS v.1 PTN3460I Product data sheet • • Removed 500 piece MOQ Added Section 14 “Packing information” 20141219 • • • Product data sheet Changed document name from “PTN3460IBS” to “PTN3460I”. Table 24 “On-chip power-on reset characteristics”: Updated typ and max values for Tporp. Updated Figure 4 “Start-up behavior with RST_N and PD_N unconnected” and Figure 5 “Start-up behavior with RST_N and PD_N sequence when used” 20140910 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 - © NXP Semiconductors N.V. 2016. All rights reserved. 39 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 20. Legal information 20.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 20.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. PTN3460I Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 40 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 20.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 21. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PTN3460I Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 16 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 41 of 42 PTN3460I NXP Semiconductors eDP to LVDS bridge for industrial and embedded applications 22. Contents 1 2 2.1 2.2 2.3 2.4 2.5 3 4 5 5.1 6 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 8.3 8.3.1 8.3.2 8.3.3 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Device features. . . . . . . . . . . . . . . . . . . . . . . . . 1 DisplayPort receiver features . . . . . . . . . . . . . . 2 LVDS transmitter features. . . . . . . . . . . . . . . . . 2 Control and system features. . . . . . . . . . . . . . . 2 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 System context diagram . . . . . . . . . . . . . . . . . . 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 4 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pinning information . . . . . . . . . . . . . . . . . . . . . . 6 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 7 Functional description . . . . . . . . . . . . . . . . . . . 9 DisplayPort receiver . . . . . . . . . . . . . . . . . . . . . 9 DP Link . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DPCD registers. . . . . . . . . . . . . . . . . . . . . . . . 10 LVDS transmitter. . . . . . . . . . . . . . . . . . . . . . . 11 System control and operation . . . . . . . . . . . . . 14 Reset and power-on initialization . . . . . . . . . . 14 Power-down for Ultra Power Save . . . . . . . . . 15 Use GPIOs to control PD_N and RST_N from system side. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8.3.4 LVDS panel control . . . . . . . . . . . . . . . . . . . . . 17 8.3.5 Panel power sequencing . . . . . . . . . . . . . . . . 18 8.3.6 Termination resistors . . . . . . . . . . . . . . . . . . . 19 8.3.7 Reference clock input . . . . . . . . . . . . . . . . . . . 19 8.3.8 Power supply . . . . . . . . . . . . . . . . . . . . . . . . . 19 8.3.9 Power-on reset . . . . . . . . . . . . . . . . . . . . . . . . 19 8.3.10 Power management . . . . . . . . . . . . . . . . . . . . 20 8.3.11 Register interface — control and programmability. . . . . . . . . . . . 20 8.3.12 EDID handling . . . . . . . . . . . . . . . . . . . . . . . . 21 9 Application design-in information . . . . . . . . . 21 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 23 11 Recommended operating conditions. . . . . . . 23 12 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 24 12.1 Device characteristics. . . . . . . . . . . . . . . . . . . 24 12.2 Power consumption . . . . . . . . . . . . . . . . . . . . 24 12.3 DisplayPort receiver characteristics . . . . . . . . 25 12.4 DisplayPort AUX characteristics . . . . . . . . . . . 26 12.5 LVDS interface characteristics . . . . . . . . . . . . 27 12.6 Control inputs and outputs . . . . . . . . . . . . . . . 27 12.7 RST_N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 12.8 13 14 14.1 14.1.1 14.1.2 14.1.3 14.1.4 14.1.5 15 15.1 15.2 15.3 15.4 16 17 18 19 20 20.1 20.2 20.3 20.4 21 22 On-chip power-on reset . . . . . . . . . . . . . . . . . 28 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 29 Packing information . . . . . . . . . . . . . . . . . . . . 30 SOT949-2 (HVQFN56); Reel dry pack, SMD, 13"; Q2/T3 turned product orientation; Orderable part number ending ,528 or MP; Ordering code (12NC) ending 528. . . . . . . . . . . . . . . . . . . . . 30 Packing method . . . . . . . . . . . . . . . . . . . . . . . 30 Product orientation . . . . . . . . . . . . . . . . . . . . . 31 Carrier tape dimensions . . . . . . . . . . . . . . . . . 31 Reel dimensions . . . . . . . . . . . . . . . . . . . . . . 32 Barcode label . . . . . . . . . . . . . . . . . . . . . . . . . 33 Soldering of SMD packages . . . . . . . . . . . . . . 34 Introduction to soldering. . . . . . . . . . . . . . . . . 34 Wave and reflow soldering. . . . . . . . . . . . . . . 34 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . 34 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . 35 Soldering: PCB footprint . . . . . . . . . . . . . . . . 37 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 38 References. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Revision history . . . . . . . . . . . . . . . . . . . . . . . 39 Legal information . . . . . . . . . . . . . . . . . . . . . . 40 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 40 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Contact information . . . . . . . . . . . . . . . . . . . . 41 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2016. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 August 2016 Document identifier: PTN3460I
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