SA5211
Transimpedance amplifier (180 MHz)
Rev. 03 — 07 October 1998
Product specification
1. Description
The SA5211 is a 28 kΩ transimpedance, wide-band, low noise amplifier with
differential outputs, particularly suitable for signal recovery in fiber optic receivers.
The part is ideally suited for many other RF applications as a general purpose gain
block.
2. Features
■
■
■
■
■
■
■
Extremely low noise: 1.8 pA / √Hz
Single 5 V supply
Large bandwidth: 180 MHz
Differential outputs
Low input/output impedances
High power supply rejection ratio
28 kΩ differential transresistance
■
■
■
■
■
■
■
■
Fiber optic receivers, analog and digital
Current-to-voltage converters
Wide-band gain block
Medical and scientific Instrumentation
Sensor preamplifiers
Single-ended to differential conversion
Low noise RF amplifiers
RF signal processing
3. Applications
c
c
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
4. Pinning information
4.1 Pinning
D Package
GND2
1
14
OUT (–)
GND2
2
13
GND2
NC
3
12
OUT (+)
IIN
4
11
GND1
NC
5
10
GND1
VCC1
6
9
GND1
VCC2
7
8
GND1
TOP VIEW
SD00318
Fig 1. Pin configuration.
5. Ordering information
Table 1:
Ordering information
Type number
SA5211D
Package
Name
Description
Version
Temperature
range (°C)
SO14
plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1 −40 to +85
6. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
Min
Max
Unit
power supply
−
6
V
Tamb
operating ambient
temperature range
-40
+85
°C
TJ
operating junction
temperature range
-55
+150
°C
TSTG
storage temperature range
-65
+150
°C
PD MAX
power dissipation, TA = 25 °C
(still-air) [1]
−
1.0
W
IIN MAX
maximum input current [2]
−
5
mA
θJA
thermal resistance
−
125
°C/W
[1]
[2]
Conditions
Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
θJA = 125 °C/W
The use of a pull-up resistor to VCC, for the PIN diode is recommended.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
2 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Table 3:
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
4.5
5.5
V
Tamb
ambient temperature range
-40
+85
°C
TJ
junction temperature range
-40
+105
°C
7. Static characteristics
Table 4: DC electrical characteristics
Min and Max limits apply over operating temperature range at VCC = 5 V, unless otherwise specified. Typical data apply at
VCC = 5 V and Tamb = 25 °C.
Symbol
Parameter
Min
Typ
Max
Unit
VIN
input bias voltage
0.55
0.8
1.00
V
VO±
output bias voltage
2.7
3.4
3.7
V
VOS
output offset voltage
−
0
130
mV
ICC
supply current
20
26
31
mA
IOMAX
output sink/source current [1]
3
4
−
mA
IIN
input current
(2% linearity)
Test Circuit 8,
Procedure 2
±20
±40
−
µA
IIN MAX
maximum input current
overload threshold
Test Circuit 8,
Procedure 4
±30
±60
−
µA
[1]
Test conditions
Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.
8. Dynamic characteristics
Table 5: AC electrical characteristics
Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 °C
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
RT
transresistance (differential output)
DC tested RL = ∞
Test Circuit 8, Procedure 1
21
28
36
kΩ
RO
output resistance (differential output)
DC tested
−
30
−
Ω
RT
transresistance (single-ended output)
DC tested
RL = ∞
10.5
14
18.0
kΩ
RO
output resistance (single-ended output)
DC tested
−
15
−
Ω
f3dB
bandwidth (-3dB)
TA = 25°C
Test circuit 1
−
180
−
MHz
RIN
input resistance
−
200
−
Ω
CIN
input capacitance
−
4
−
pF
∆R/∆V
transresistance power supply sensitivity
VCC = 5±0.5 V
−
3.7
−
%/V
∆R/∆T
transresistance ambient temperature sensitivity
∆Tamb = Tamb MAX-Tamb MIN
−
0.025 −
IN
RMS noise current spectral density (referred to
input)
Test Circuit 2
f = 10 MHz
TA = 25 °C
−
1.8
−
pA/√Hz
IT
integrated RMS noise current over the
bandwidth (referred to input)
TA = 25 °C
Test Circuit 2
−
−
−
−
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
%/°C
Rev. 03 — 07 October 1998
3 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Table 5: AC electrical characteristics…continued
Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 °C
Symbol
Test conditions
Min
Typ
Max
Unit
In
CS =
0 [1]
∆f = 50 MHz
∆f = 100 MHz
∆f = 200 MHz
−
−
−
13
20
35
−
−
−
nA
In
CS = 1pF
∆f = 50 MHz
∆f = 100 MHz
∆f = 200 MHz
−
−
−
13
21
41
−
−
−
nA
PSRR
power supply rejection ratio [2]
(VCC1 = VCC2)
DC tested, ∆VCC = 0.1V
Equivalent AC
Test Circuit 3
23
32
−
dB
PSRR
power supply rejection ratio [2] (VCC1)
DC tested, ∆VCC = 0.1V
Equivalent AC
Test Circuit 4
23
32
−
dB
PSRR
power supply rejection ratio [2] (VCC2)
DC tested, ∆VCC = 0.1V
Equivalent AC
Test Circuit 5
45
65
−
dB
PSRR
power supply rejection ratio (ECL
configuration) [2]
f = 0.1 MHz
Test Circuit 6
−
23
−
dB
VOMAX
maximum differential output voltage swing
RL = ∞
Test Circuit 8, Procedure 3
1.7
3.2
−
VP-P
VIN MAX
maximum input amplitude for output duty cycle
of 50±5% [3]
Test Circuit 7
160
−
−
mVP-P
tR
rise time for 50mV output signal [4]
Test Circuit 7
−
0.8
1.8
ns
[1]
[2]
[3]
[4]
Parameter
Package parasitic capacitance amounts to about 0.2pF
PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC lines.
Guaranteed by linearity and overload tests.
tR defined as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
4 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
9. Test circuits
SINGLE-ENDED
DIFFERENTIAL
NETWORK ANALYZER
RT ≈
S-PARAMETER TEST SET
PORT 1
VOUT
R = 2 × S21 × R
VIN
RO ≈ ZO
PORT 2
1 – S22 – 33
1 + S22
RT =
VOUT
R = 4 × S21 × R
VIN
RO = 2ZO
1 – S22 – 66
1 + S22
5V
VCC1
0.1µF
ZO = 50
VCC2
OUT
33
0.1µF
ZO = 50
R = 1k
IN
DUT
33
0.1µF
OUT
RL = 50
50
GND1
GND2
Test Circuit 1
SPECTRUM ANALYZER
5V
VCC1
OUT
NC
IN
AV = 60DB
VCC2
33
DUT
33
0.1µF
ZO = 50
0.1µF
OUT
RL = 50
GND1
GND2
Test Circuit 2
Fig 2.
SD00319
Test circuits 1 and 2.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
5 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
NETWORK ANALYZER
5V
10µF
S-PARAMETER TEST SET
0.1µF
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
10µF
0.1µF
16
VCC1
CAL
VCC2
33
0.1µF
OUT
50
100
BAL.
IN
33
TRANSFORMER
NH0300HB
TEST
UNBAL.
OUT
0.1µF
GND1
GND2
Test Circuit 3
NETWORK ANALYZER
5V
10µF
S-PARAMETER TEST SET
0.1µF
PORT 1
CURRENT PROBE
1mV/mA
10µF
0.1µF
5V
PORT 2
16
VCC2
10µF
CAL
VCC1
33
0.1µF
OUT
0.1µF
IN
50
100
BAL.
33
TRANSFORMER
NH0300HB
TEST
UNBAL.
OUT
GND1
GND2
0.1µF
Test Circuit 4
SD00320
Fig 3. Test circuits 3 and 4.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
6 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
NETWORK ANALYZER
5V
10µF
S-PARAMETER TEST SET
0.1µF
PORT 1
CURRENT PROBE
1mV/mA
10µF
0.1µF
5V
PORT 2
16
VCC1
10µF
CAL
VCC2
33
0.1µF
OUT
0.1µF
IN
50
100
BAL.
33
TRANSFORMER
NH0300HB
TEST
UNBAL.
OUT
0.1µF
GND2
GND1
Test Circuit 5
NETWORK ANALYZER
S-PARAMETER TEST SET
GND
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
10µF
0.1µF
16
GND1
CAL
GND2
33
0.1µF
OUT
50
100
BAL.
IN
33
TRANSFORMER
NH0300HB
TEST
UNBAL.
OUT
VCC1
5.2V
VCC2
0.1µF
10µF
0.1µF
Test Circuit 6
SD00321
Fig 4. Test circuits 5 and 6.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
7 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
PULSE GEN.
VCC1
VCC2
33
0.1µF 1k
0.1µF
OUT
IN
DUT
A
OUT
ZO = 50Ω
OSCILLOSCOPE
33
B
0.1µF
ZO = 50Ω
50
GND1
GND2
Measurement done using
differential wave forms
Test Circuit 7
SD00322
Fig 5. Test circuit 7.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
8 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Typical Differential Output Voltage
vs Current Input
5V
+
OUT +
IN
VOUT (V)
DUT
–
OUT –
IIN (µA)
GND1
GND2
2.00
DIFFERENTIAL OUTPUT VOLTAGE (V)
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–100
–80
–60
–40
–20
0
20
40
60
80
100
CURRENT INPUT (µA)
NE5211 TEST CONDITIONS
Procedure 1
RT measured at 15µA
RT = (VO1 – V O2)/(+15µA – (–15µA))
Where: V O1 Measured at IIN = +15µA
VO2 Measured at IIN = –15µA
Procedure 2
Linearity = 1 – ABS((VOA – V OB) / (VO3 – V O4))
Where: V O3 Measured at IIN = +30µA
VO4 Measured at IIN = –30µA
VOA = RT × (+ 30 µA) + VOB
VOB = RT × (– 30 µA) + VOB
Procedure 3
VOMAX = V O7 – V O8
Where: V O7 Measured at IIN = +65µA
VO8 Measured at IIN = –65µA
Procedure 4
IIN Test Pass Conditions:
VO7 – V O5 > 20mV and V 06 – V O5 > 50mV
Where: V O5 Measured at IIN = +40µA
VO6 Measured at IIN = –400µA
VO7 Measured at IIN = +65µA
VO8 Measured at IIN = –65µA
Test Circuit 8
SD00331
Fig 6. Test circuit 8.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
9 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
10. Typical performance characteristics
NE5211 Supply Current
vs Temperature
NE5211 Output Bias Voltage
vs Temperature
26
5.0V
24
4.5V
22
DIFFERENTIAL OUTPUT VOLTAGE (V)
OUTPUT BIAS VOLTAGE (V)
5.5V
28
(ICC1+ I CC2)
TOTAL SUPPLY CURRENT (mA)
2.0
3.50
30
VCC = 5.0V
3.45
3.40
3.35
PIN 14
PIN 12
3.30
20
3.25
18
60 40 20
0
20
40
60
60 40 20
80 100 120 140
0
20
40
60
80 100 120 140
NE5211 Input Bias Voltage
vs Temperature
0
°
55 C
2.0
850
800
750
700
4.5V
5.5V
5.0V
3.3
3.1
4.5V
2.9
2.7
650
60 40 20
0
20
40
60
80 100 120 140
60 40 20
°
40
60
80 100 120 140
5.5V
4.5V
0
4.5V
5.0V
2.0
100.0
5.5V
0
+100.0
m
INPUT CURRENT ( A)
NE5211 Output Voltage
vs Input Current
NE5211 Differential Output Swing
vs Temperature
4.0
DIFFERENTIAL OUTPUT SWING (V)
VOS = VOUT12 VOUT14
0
4.5V
40
5.0V
60
5.5V
100
120
140
60 40 20
3.8
DC TESTED
3.6
RL =
3.4
4.5
5.5V
5.0V
2.8
2.6
4.5V
20
40
60
80 100 120 140
°
°
+125 C
°
+85 C
°
+25 C
°
°
55 C
55 C
°
+125 C
°
+85 C
2.4
2.2
0
°
+85 C
+25 C
3.2
3.0
°
+125 C
¥
OUTPUT VOLTAGE (V)
40
80
20
5.0V
AMBIENT TEMPERATURE ( C)
NE5211 Output Offset Voltage
vs Temperature
20
0
+100.0
m
NE5211 Differential Output Voltage
vs Input Current
°
AMBIENT TEMPERATURE ( C)
20
0
2.0
3.7
3.5
+85 C
INPUT CURRENT ( A)
DIFFERENTIAL OUTPUT VOLTAGE (V)
5.5V
OUTPUT BIAS VOLTAGE (V)
3.9
900
°
°
+25 C
°
+125 C
100.0
4.1
PIN 14
°
+25 C
NE5211 Output Bias Voltage
vs Temperature
950
INPUT BIAS VOLTAGE (mV)
°
55 C
°
°
°
+125 C
°
+85 C
AMBIENT TEMPERATURE ( C)
AMBIENT TEMPERATURE ( C)
OUTPUT OFFSET VOLTAGE (mV)
NE5211 Output Voltage
vs Input Current
60 40 20
°
AMBIENT TEMPERATURE ( C)
0
20
40
60
80 100 120 140
°
AMBIENT TEMPERATURE ( C)
2.5
100.0
°
55 C
0
m
°
+25 C
+100.0
INPUT CURRENT ( A)
SD00332
Fig 7. Typical performance characteristics.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
10 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
NE5211 Differential Transresistance
5.5V
5.0V
PIN 12
TA = 25°C
RL = 50W
4.5V
1
10
FREQUENCY (MHz)
100
NE5211 Gain vs Frequency
33
DIFFERENTIAL TRANSRESISTANCE (kW )
17
16
15
14
13
12
11
10
9
8
0.1
GAIN (dB)
GAIN (dB)
17
16
15
14
13
12
11
10
9
8
0.1
NE5211 Gain vs Frequency
5.5V
32
5.0V
PIN 14
TA = 25°C
RL = 50W
31
4.5V
1
10
FREQUENCY (MHz)
vs Temperature
DC TESTED
RL = ¥
30
29 5.5V
28 5.0V
4.5V
27
60 40 20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
100
NE5211 Typical
Bandwidth Distribution
BANDWIDTH (MHz)
PIN 12
SINGLE-ENDED
RL = 50W
160
140
120
17
16
15
14
13
12
11
10
9
8
0.1
POPULATION (%)
NE5211 Gain and Phase
120
60
0
PIN 12
VCC = 5V
TA = 25°C
1
10
FREQUENCY (MHz)
PHASE (o)
GAIN (dB)
Shift vs Frequency
GAIN (dB)
NE5211 Gain and Phase
vs Temperature
200 5.5V
5.0V
180 4.5V
60 PIN 12
VCC = 5.0V
SINGLE-ENDED
TA = 25°C
50 RL = 50W
40
30
20
10
0
143 155 167 179 191 203
FREQUENCY (MHz)
GAIN (dB)
GAIN (dB)
NE5211 Bandwidth
220
(70 Parts from 3 Wafer Lots)
NE5211 Gain vs Frequency
17
55°C
16
15
14
125°C
13 PIN 14
85°C
12 VCC = 5V
25°C
11
10
9
8
0.1
1
10
100
FREQUENCY (MHz)
60
120
100
17
16
15
14
13
12
11
10
9
8
0.1
Shift vs Frequency
PHASE (o)
NE5211 Gain vs Frequency
17
55°C
16
15
14
125°C
13 PIN 12
85°C
12 VCC = 5V
25°C
11
10
9
8
0.1
1
10
100
FREQUENCY (MHz)
120
PIN 14
VCC = 5V
TA = 25°C
1
10
FREQUENCY (MHz)
270
100
100
60 40 20 0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
SD00333
Fig 8. Typical performance characteristics. (cont.)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
11 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
NE5211 Output Resistance
vs Temperature
NE5211 Output Resistance
vs Temperature
18
18
19
PIN 12
16
PIN 14
15
PIN 12
14
13
4.5V
15
5.0V
14
5.5V
20
40
60
80 100 120 140
°
4.5V
5.0V
15
5.5V
10
5
0
0.1
1
10
20
40
60
60 40 20
100
0
20
40
60
80 100 120 140
°
AMBIENT TEMPERATURE ( C)
NE5211 Output Resistance
vs Frequency
)
80
60
VCC = 5.0V
°
°
+25°C
55°C
+125 C
50
+85 C
40
30
20
10
0
0.1
1
10
100
FREQUENCY (MHz)
NE5211 Power Supply Rejection Ratio
vs Temperature
80
70
60
VCC = 5.0V
50
PIN 12
40
30
20
10
PIN 14
0
0.1
1
10
100
FREQUENCY (MHz)
NE5211 Group Delay
vs Frequency
10
40
8
VCC1 = VCC2 = 5.0V
DVCC = ±0.1V
6
DC TESTED
OUTPUT REFERRED
DELAY (ns)
36
5.5V
80 100 120 140
70
FREQUENCY (MHz)
38
15
W
)
)
0
W
OUTPUT RESISTANCE (
°
TA = 25 C
25
20
5.0V
NE5211 Output Resistance
vs Frequency
W
PIN 12
30
4.5V
16
°
40
DC TESTED
17
AMBIENT TEMPERATURE ( C)
NE5211 Output Resistance
vs Frequency
35
18
14
60 40 20
OUTPUT RESISTANCE (
0
AMBIENT TEMPERATURE ( C)
OUTPUT RESISTANCE (
)
W
16
13
60 40 20
POWER SUPPLY REJECTION RATIO (dB)
PIN 14
DC TESTED
17
OUTPUT RESISTANCE (
W
)
DC TESTED
OUTPUT RESISTANCE (
OUTPUT RESISTANCE (
W
)
VCC = 5.0V
17
NE5211 Output Resistance
vs Temperature
34
4
2
0
32
30
0.1
20
40
60
80
100 120 140 160 180 200
FREQUENCY (MHz)
28
60 40 20
0
20
40
60
80 100 120 140
°
AMBIENT TEMPERATURE ( C)
SD00335
Fig 9. Typical performance characteristics. (cont.)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
12 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Output Step Response
VCC = 5V
TA = 25°C
20mV/Div
0
2
4
6
8
10
(ns)
12
14
16
18
20
Fig 10. Typical performance characteristics. (cont.)
11. Theory of operation
Transimpedance amplifiers have been widely used as the preamplifier in fiber-optic
receivers. The SA5211 is a wide bandwidth (typically 180 MHz) transimpedance
amplifier designed primarily for input currents requiring a large dynamic range, such
as those produced by a laser diode. The maximum input current before output stage
clipping occurs at typically 50µA. The SA5211 is a bipolar transimpedance amplifier
which is current driven at the input and generates a differential voltage signal at the
outputs. The forward transfer function is therefore a ratio of the differential output
voltage to a given input current with the dimensions of ohms. The main feature of this
amplifier is a wideband, low-noise input stage which is desensitized to photodiode
capacitance variations. When connected to a photodiode of a few picoFarads, the
frequency response will not be degraded significantly. Except for the input stage, the
entire signal path is differential to provide improved power-supply rejection and ease
of interface to ECL type circuitry. A block diagram of the circuit is shown in Figure 11.
The input stage (A1) employs shunt-series feedback to stabilize the current gain of
the amplifier. The transresistance of the amplifier from the current source to the
emitter of Q3 is approximately the value of the feedback resistor, RF = 14.4 kΩ. The
gain from the second stage (A2) and emitter followers (A3 and A4) is about two.
Therefore, the differential transresistance of the entire amplifier, RT is
V OUT ( diff )
R T = ---------------------------- = 2 R F = 2 ( 14.4 K ) = 28.8 kΩ
I IN
(1)
The single-ended transresistance of the amplifier is typically 14.4 kΩ.
The simplified schematic in Figure 12 shows how an input current is converted to a
differential output voltage. The amplifier has a single input for current which is
referenced to Ground 1. An input current from a laser diode, for example, will be
converted into a voltage by the feedback resistor RF. The transistor Q1 provides most
of the open loop gain of the circuit, AVOL≈70. The emitter follower Q2 minimizes
loading on Q1. The transistor Q4, resistor R7, and VB1 provide level shifting and
interface with the Q15 – Q16 differential pair of the second stage which is biased with
an internal reference, VB2. The differential outputs are derived from emitter followers
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
13 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Q11 – Q12 which are biased by constant current sources. The collectors of Q11 – Q12
are bonded to an external pin, VCC2, in order to reduce the feedback to the input
stage. The output impedance is about 17Ω single-ended. For ease of performance
evaluation, a 33Ω resistor is used in series with each output to match to a 50Ω test
system.
12. Bandwidth calculations
The input stage, shown in Figure 13, employs shunt-series feedback to stabilize the
current gain of the amplifier. A simplified analysis can determine the performance of
the amplifier. The equivalent input capacitance, CIN, in parallel with the source, IS, is
approximately 4 pF (typical), assuming that CS = 0 where CS is the external source
capacitance.
Since the input is driven by a current source the input must have a low input
resistance. The input resistance, RIN, is the ratio of the incremental input voltage, VIN,
to the corresponding input current, IIN and can be calculated as:
V IN
RF
14.4 kΩ
R IN = -------- = ----------------------= -------------------- = 203Ω
I IN
1 + A VOL
71
(2)
Thus CIN and RIN will form the dominant pole of the entire amplifier;
1
f –3db = -------------------------2πR IN C IN
(3)
Assuming typical values for RF = 14.4 kΩ, RIN = 200 Ω, CIN = 4 pF
1
f –3db = --------------------------------------- = 200 MHz
2π 4 pF 200 Ω
(4)
The operating point of Q1, Figure 12, has been optimized for the lowest current noise
without introducing a second dominant pole in the pass-band. All poles associated
with subsequent stages have been kept at sufficiently high enough frequencies to
yield an overall single pole response. Although wider bandwidths have been achieved
by using a cascade input stage configuration, the present solution has the advantage
of a very uniform, highly desensitized frequency response because the Miller effect
dominates over the external photodiode and stray capacitances. For example,
assuming a source capacitance of 1 pF, input stage voltage gain of 70, RIN = 60 Ω
then the total input capacitance, CIN = (1 + 4) pF which will lead to only a 20%
bandwidth reduction.
13. Noise
Most of the currently installed fiber-optic systems use non-coherent transmission and
detect incident optical power. Therefore, receiver noise performance becomes very
important. The input stage achieves a low input referred noise current (spectral
density) of 1.8 pA/√Hz (typical). The transresistance configuration assures that the
external high value bias resistors often required for photodiode biasing will not
contribute to the total noise system noise. The equivalent input RMS noise current is
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
14 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
strongly determined by the quiescent current of Q1, the feedback resistor RF, and the
bandwidth; however, it is not dependent upon the internal Miller-capacitance. The
measured wideband noise was 41 nA RMS in a 200 MHz bandwidth.
14. Dynamic range calculations
The electrical dynamic range can be defined as the ratio of maximum input current to
the peak noise current:
Electrical dynamic range, DE, in a 200 MHz bandwidth assuming IINMAX = 60 µA and
a wideband noise of IEQ = 41 nARMS for an external source capacitance of CS = 1 pF.
(Max. input current)
D E = -----------------------------------------------(Peak noise current)
(5)
–6
( 60 × 10 )
D E (dB) = 20 log ---------------------------–9
(6)
( 60 µA )
D E ( dB ) = 20 log -------------------- = 60db
( 58 nA )
(7)
( 2 41 10
)
In order to calculate the optical dynamic range the incident optical power must be
considered.
For a given wavelength λ;
hc
Energy of one Photon = ------ watt sec (Joule)
λ
Where h = Planck’s Constant = 6.6 × 10-34 Joule sec.
c = speed of light = 3 × 108 m/sec
c / λ = optical frequency
P
-----hc
No. of incident photons/sec = ------ where P = optical incident power
λ
P
-----hc
No. of generated electrons/sec = η × -----λ
where η = quantum efficiency
no. of generated electron hole pairs
= -----------------------------------------------------------------------------------no. of incident photons
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
15 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
P
----hc
∴I = η × ----- × e Amps (Coulombs/sec.)
λ
where e = electron charge = 1.6 × 10-19 Coulombs
η×e
------------hc
Responsivity R = ------------- Amp/watt
λ
I = P×R
Assuming a data rate of 400 Mbaud (Bandwidth, B = 200 MHz), the noise parameter
Zn may be calculated as:1
–9
I EQ
41 × 10
Z = ------= 1281
- = -----------------------------------------------------------– 19
6
qB
( 1.6 × 10 ) ( 200 × 10 )
(8)
where Z is the ratio of RMS noise output to the peak response to a single hole-electron
pair. Assuming 100% photodetector quantum efficiency, half mark/half space digital
transmission, 850nm lightwave and using Gaussian approximation, the minimum
required optical power to achieve 10-9 BER is:
hc
– 19
P avMIN = 12 -----BZ = 12 × 2.3 × 10
λ
6
200 × 10 ( 1281 ) = 719 nW = – 31.5 dBm = 1139 nW = – 29.4 dBm
(9)
where h is Planck’s Constant, c is the speed of light, λ is the wavelength. The
minimum input current to the SA5211, at this input power is:
–9
– 19
λ 1
Joule
707 × 10 × 1.6 × 10
I avMIN = qP avMIN ----- ------------ × ------------ × q = l = ---------------------------------------------------------- = 500 nA
– 19
hc Joule
sec
2.3 × 10
(10)
Choosing the maximum peak overload current of IavMAX = 60 µA, the maximum mean
optical power is:
– 19
hcl avMAX
2.3 × 10
P avMAX = --------------------- = --------------------------60
× 10 µA = 86 µW or – 10.6 dBm (optical)
– 19
λq
1.6 × 10
(11)
Thus the optical dynamic range, DO is:
D O = P avMAX – P avMIN = – 4.6 – ( – 29.4 ) = 24.8 dB
D O = P avMAX – P avMIN = – 31.5 – ( – 10.6 )
1.
(12)
S.D. Personick, Optical Fiber Transmission Systems, Plenum Press, NY, 1981, Chapter 3.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
16 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
OUTPUT +
A3
INPUT
A1
A2
RF
A4
OUTPUT –
SD00327
Fig 11. SA5211 – Block diagram.
This represents the maximum limit attainable with the SA5211 operating at 200 MHz
bandwidth, with a half mark/half space digital transmission at 850nm wavelength.
VCC1
VCC2
R3
R1
Q2
INPUT
R13
Q4
Q11
+
Q3
Q1
R12
Q12
Q15
R2
Q16
R14
GND1
OUT–
R15
R7
PHOTODIODE
+
OUT+
VB2
R5
R4
GND2
SD00328
Fig 12. Transimpedance amplifier.
VCC
IC1
R1
INPUT
Q2
IB
IIN
R3
Q3
Q1
R2
VIN
IF
VEQ3
RF
R4
SD00329
Fig 13. Shunt-series input stage.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
17 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
15. Application information
Package parasitics, particularly ground lead inductances and parasitic capacitances,
can significantly degrade the frequency response. Since the SA5211 has differential
outputs which can feed back signals to the input by parasitic package or board layout
capacitances, both peaking and attenuating type frequency response shaping is
possible. Constructing the board layout so that Ground 1 and Ground 2 have very low
impedance paths has produced the best results. This was accomplished by adding a
ground-plane stripe underneath the device connecting Ground 1, Pins 8-11, and
Ground 2, Pins 1 and 2 on opposite ends of the SO14 package. This ground-plane
stripe also provides isolation between the output return currents flowing to either
VCC2 or Ground 2 and the input photodiode currents to flowing to Ground 1. Without
this ground-plane stripe and with large lead inductances on the board, the part may
be unstable and oscillate near 800 MHz. The easiest way to realize that the part is
not functioning normally is to measure the DC voltages at the outputs. If they are not
close to their quiescent values of 3.3 V (for a 5 V supply), then the circuit may be
oscillating. Input pin layout necessitates that the photodiode be physically very close
to the input and Ground 1. Connecting Pins 3 and 5 to Ground 1 will tend to shield the
input but it will also tend to increase the capacitance on the input and slightly reduce
the bandwidth.
As with any high-frequency device, some precautions must be observed in order to
enjoy reliable performance. The first of these is the use of a well-regulated power
supply. The supply must be capable of providing varying amounts of current without
significantly changing the voltage level. Proper supply bypassing requires that a good
quality 0.1 µF high-frequency capacitor be inserted between VCC1 and VCC2,
preferably a chip capacitor, as close to the package pins as possible. Also, the
parallel combination of 0.1 µF capacitors with 10 µF tantalum capacitors from each
supply, VCC1 and VCC2, to the ground plane should provide adequate decoupling.
Some applications may require an RF choke in series with the power supply line.
Separate analog and digital ground leads must be maintained and printed circuit
board ground plane should be employed whenever possible.
Figure 14 depicts a 50 Mb/s TTL fiber-optic receiver using the BPF31, 850 nm LED,
the SA5211 and the SA5214 post amplifier.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
18 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
+VCC
GND
47µF
C1
C2
.01µF
D1
LED
1
LED
IN1B
20
3
THRESH
4
GNDA
5
FLAG
100pF
IN1A
19
L2
10µH
6
C11
C10
µ
10 F
L3
10µH
.01µF
C12
C13
.01µF
JAM
7
VCCD
8
VCCA
9
GNDD
10
TTLOUT
CAZP 18
CAZN
NE5214
2
CPKDET
17
GND
VCC
7
9
GND
VCC
6
10
GND
NC
5
IIN
4
8
100pF
C9
R3
47k
L1
10µH
C7
C8
11
0.1µF
GND
NE5210
R2
220
OUT1B 16
12
OUT
NC
3
IN8B
15
13
GND
GND
2
OUT1A
14
14
OUT
GND
1
IN8A
13
RHYST
12
C4
.01µF
R1
100
C5
1.0µF
C3
10µF
.01µF
C6
BPF31
OPTICAL
INPUT
RPKDET 11
10µF
R4
4k
VOUT (TTL)
SD00330
The NE5210/NE5217 combination can operate at data rates in excess of 100 Mb/s NRZ
The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC-50 MHz band, but does create extra
high frequency noise on the NE5210 VCC pin(s).
Fig 14. A 50Mb/s fiber optic receiver.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
19 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
1
14
OUT ()
GND 2
13
2
GND 2
GND 2
12
3
OUT (+)
NC
INPUT
11
4
NC
10
GND 1
GND 1
5
GND 1
VCC1
9
6
7
ECN No.: 06027
8
GND 1
VCC 2
SD00488
1992 Mar 13
Fig 15. SA5211 Bonding diagram.
15.1 Die sales disclaimer
Due to the limitations in testing high frequency and other parameters at the die level,
and the fact that die electrical characteristics may shift after packaging, die electrical
parameters are not specified and die are not guaranteed to meet electrical
characteristics (including temperature range) as noted in this data sheet which is
intended only to specify electrical characteristics for a packaged device.
All die are 100% functional with various parametrics tested at the wafer level, at room
temperature only (25°C), and are guaranteed to be 100% functional as a result of
electrical testing to the point of wafer sawing only. Although the most modern
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
20 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
processes are utilized for wafer sawing and die pick and place into waffle pack
carriers, it is impossible to guarantee 100% functionality through this process. There
is no post waffle pack testing performed on individual die.
Since Philips Semiconductors has no control of third party procedures in the handling
or packaging of die, Philips Semiconductors assumes no liability for device
functionality or performance of the die or systems on any die sales.
Although Philips Semiconductors typically realizes a yield of 85% after assembling
die into their respective packages, with care customers should achieve a similar yield.
However, for the reasons stated above, Philips Semiconductors cannot guarantee
this or any other yield on any die sales.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
21 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
16. Package outline
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
D
E
A
X
c
y
HE
v M A
Z
8
14
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
7
e
0
detail X
w M
bp
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
8.75
8.55
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100 0.35
0.014 0.0075 0.34
0.16
0.15
0.244
0.039
0.050
0.041
0.228
0.016
0.010 0.057
inches 0.069
0.004 0.049
0.028
0.024
0.01
0.01
0.028
0.004
0.012
θ
o
8
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT108-1
076E06
MS-012
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
Fig 16. SOT108-1.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
22 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
17. Soldering
17.1 Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology. A more in-depth account
of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit
Packages (document order number 9398 652 90011).
There is no soldering method that is ideal for all surface mount IC packages. Wave
soldering can still be used for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is recommended.
17.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling
or pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 250 °C. The top-surface
temperature of the packages should preferable be kept below 220 °C for thick/large
packages, and below 235 °C small/thin packages.
17.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging
and non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal
results:
• Use a double-wave soldering method comprising a turbulent wave with high
upward pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45° angle
to the transport direction of the printed-circuit board. The footprint must
incorporate solder thieves downstream and at the side corners.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
23 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the
need for removal of corrosive residues in most applications.
17.4 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low
voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time
must be limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 to 5 seconds between 270 and 320 °C.
17.5 Package related soldering information
Table 6:
Suitability of surface mount IC packages for wave and reflow soldering
methods
Package
Soldering method
BGA, HBGA, LFBGA, SQFP, TFBGA
Reflow [1]
not suitable
suitable
suitable [2]
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, SMS
not
PLCC [3], SO, SOJ
suitable
suitable
suitable
recommended [3] [4]
LQFP, QFP, TQFP
not
SSOP, TSSOP, VSO
not recommended [5]
[1]
[2]
[3]
[4]
[5]
suitable
suitable
All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the
maximum temperature (with respect to time) and body size of the package, there is a risk that internal
or external package cracks may occur due to vaporization of the moisture in them (the so called
popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated
Circuit Packages; Section: Packing Methods.
These packages are not suitable for wave soldering as a solder joint between the printed-circuit board
and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top
version).
If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave
direction. The package footprint must incorporate solder thieves downstream and at the side corners.
Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger
than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Wave
Rev. 03 — 07 October 1998
24 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
18. Revision history
Table 7:
Revision history
Rev Date
03
19981007
CPCN
Description
853-1799 20142
Product specification; third version; supersedes second version SA5211_2 of
1998 Oct 07 (9397 750 04624). Modifications:
The format of this specification has been redesigned to comply with Philips
Semiconductors’ new presentation and information standard.
02
19981007
853-1799 20142
Product specification; second version; supersedes first version SA5211_1 of
1995 Apr 26. Modifications:
Changed prefix from NE to SA.
01
19950426
853-1799 15170
Product specification; initial version.
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
25 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
19. Data sheet status
Data sheet status [1]
Product status [2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
20. Definitions
21. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2001 All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
26 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Philips Semiconductors - a worldwide company
Argentina: see South America
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Tel. +43 160 101, Fax. +43 160 101 1210
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102
Canada: Tel. +1 800 234 7381
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA72)
© Philips Electronics N.V. 2001. All rights reserved.
9397 750 07427
Product specification
Rev. 03 — 07 October 1998
27 of 28
SA5211
Philips Semiconductors
Transimpedance amplifier (180 MHz)
Contents
1
2
3
4
4.1
5
6
7
8
9
10
11
12
13
14
15
15.1
16
17
17.1
17.2
17.3
17.4
17.5
18
19
20
21
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performance characteristics . . . . . . . 10
Theory of operation . . . . . . . . . . . . . . . . . . . . 13
Bandwidth calculations . . . . . . . . . . . . . . . . . 14
Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Dynamic range calculations . . . . . . . . . . . . . 15
Application information. . . . . . . . . . . . . . . . . . 18
Die sales disclaimer . . . . . . . . . . . . . . . . . . . . 20
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Introduction to soldering surface mount
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 23
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 24
Package related soldering information . . . . . . 24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 25
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 26
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
© Philips Electronics N.V. 2001.
Printed in the U.S.A
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 07 October 1998
Document order number: 9397 750 07427
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
工商网监
湘ICP备2023018690号
