1N5350B

DATA SHEET www.onsemi.com 5 Watt Surmetic 40 Zener Voltage Regulators Cathode 1N53 Series Anode This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead, transfer−molded plastic package that offers protection in all common environmental conditions. AXIAL LEAD CASE 017AA PLASTIC Features • • • • • Zener Voltage Range − 3.3 V to 200 V ESD Rating of Class 3 (>16 kV) per Human Body Model Surge Rating of up to 180 W @ 8.3 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Pb−Free Packages are Available* MARKING DIAGRAM A 1N 53xxB YYWWG G Mechanical Characteristics CASE: Void free, transfer−molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 260°C, 1/16 in. from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any A = Assembly Location 1N53xxB = Device Number (Refer to Tables on Pages 3 & 4) YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Value Unit Max. Steady State Power Dissipation @ TL = 25°C, Lead Length = 3/8 in Derate above 25°C PD 5 W 40 mW/°C Junction−to−Lead Thermal Resistance qJL 25 °C/W TJ, Tstg −65 to +200 (Note 1) °C Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Max operating temperature for DC conditions is 150°C, but not to exceed 200°C for pulsed conditions with low duty cycle or non−repetitive. ORDERING INFORMATION Package Shipping† 1N53xxB, G Axial Lead (Pb−Free) 1000 Units/Box 1N53xxBRL, G Axial Lead (Pb−Free) 4000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2021 − Rev. 17 1 Publication Order Number: 1N5333B/D 1N53 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF IR Maximum Surge Current @ TA = 25°C DVZ Reverse Zener Voltage Change IZM Maximum DC Zener Current VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types) Zener Impedance (Note 3) Leakage Current @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR Zener Voltage (Note 3) Device† VZ (Volts) IR (Note 4) DVZ (Note 5) IZM (Note 6) Device Marking Min Nom Max mA W W mA mA Max Volts A Volts mA 1N5333B 1N5334B 1N5335B 1N5336B 1N5337B 1N5333B 1N5334B 1N5335B 1N5336B 1N5337B 3.14 3.42 3.71 4.09 4.47 3.3 3.6 3.9 4.3 4.7 3.47 3.78 4.10 4.52 4.94 380 350 320 290 260 3 2.5 2 2 2 400 500 500 500 450 1 1 1 1 1 300 150 50 10 5 1 1 1 1 1 20 18.7 17.6 16.4 15.3 0.85 0.8 0.54 0.49 0.44 1440 1320 1220 1100 1010 1N5338B 1N5339B 1N5340B 1N5341B 1N5342B 1N5338B 1N5339B 1N5340B 1N5341B 1N5342B 4.85 5.32 5.70 5.89 6.46 5.1 5.6 6.0 6.2 6.8 5.36 5.88 6.30 6.51 7.14 240 220 200 200 175 1.5 1 1 1 1 400 400 300 200 200 1 1 1 1 1 1 1 1 1 10 1 2 3 3 5.2 14.4 13.4 12.7 12.4 11.5 0.39 0.25 0.19 0.1 0.15 930 865 790 765 700 1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 7.13 7.79 8.27 8.65 9.50 7.5 8.2 8.7 9.1 10 7.88 8.61 9.14 9.56 10.5 175 150 150 150 125 1.5 1.5 2 2 2 200 200 200 150 125 1 1 1 1 1 10 10 10 7.5 5 5.7 6.2 6.6 6.9 7.6 10.7 10 9.5 9.2 8.6 0.15 0.2 0.2 0.22 0.22 630 580 545 520 475 (Note 2) Devices listed in bold, italic are onsemi Preferred devices. Preferred devices are recommended choices for future use and best overall value. 2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%. 3. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C). 4. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, −2°C). 5. VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, −2°C). 6. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 25°C at 3/8″ maximum from the device body. †The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available. www.onsemi.com 2 1N53 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types) Zener Voltage (Note 8) Device† (Note 7) VZ (Volts) @ IZT Zener Impedance (Note 8) Leakage Current ZZT @ IZT IR @ VR ZZK @ IZK IZK IR (Note 9) DVZ (Note 10) IZM (Note 11) Device Marking Min Nom Max mA W W mA mA Max Volts A Volts mA 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 10.45 11.4 12.35 13.3 14.25 11 12 13 14 15 11.55 12.6 13.65 14.7 15.75 125 100 100 100 75 2.5 2.5 2.5 2.5 2.5 125 125 100 75 75 1 1 1 1 1 5 2 1 1 1 8.4 9.1 9.9 10.6 11.5 8.0 7.5 7.0 6.7 6.3 0.25 0.25 0.25 0.25 0.25 430 395 365 340 315 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 15.2 16.15 17.1 18.05 19 16 17 18 19 20 16.8 17.85 18.9 19.95 21 75 70 65 65 65 2.5 2.5 2.5 3 3 75 75 75 75 75 1 1 1 1 1 1 0.5 0.5 0.5 0.5 12.2 12.9 13.7 14.4 15.2 6.0 5.8 5.5 5.3 5.1 0.3 0.35 0.4 0.4 0.4 295 280 264 250 237 1N5358B 1N5359B 1N5360B 1N5361B 1N5362B 1N5358B 1N5359B 1N5360B 1N5361B 1N5362B 20.9 22.8 23.75 25.65 26.6 22 24 25 27 28 23.1 25.2 26.25 28.35 29.4 50 50 50 50 50 3.5 3.5 4 5 6 75 100 110 120 130 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 16.7 18.2 19 20.6 21.2 4.7 4.4 4.3 4.1 3.9 0.45 0.55 0.55 0.6 0.6 216 198 190 176 170 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B 28.5 31.35 34.2 37.05 40.85 30 33 36 39 43 31.5 34.65 37.8 40.95 45.15 40 40 30 30 30 8 10 11 14 20 140 150 160 170 190 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 22.8 25.1 27.4 29.7 32.7 3.7 3.5 3.5 3.1 2.8 0.6 0.6 0.65 0.65 0.7 158 144 132 122 110 1N5368B 1N5369B 1N5370B 1N5371B 1N5372B 1N5368B 1N5369B 1N5370B 1N5371B 1N5372B 44.65 48.45 53.2 57 58.9 47 51 56 60 62 49.35 53.55 58.8 63 65.1 25 25 20 20 20 25 27 35 40 42 210 230 280 350 400 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 35.8 38.8 42.6 45.5 47.1 2.7 2.5 2.3 2.2 2.1 0.8 0.9 1.0 1.2 1.35 100 93 86 79 76 1N5373B 1N5374B 1N5375B 1N5377B 1N5373B 1N5374B 1N5375B 1N5377B 64.6 71.25 77.9 86.45 68 75 82 91 71.4 78.75 86.1 95.55 20 20 15 15 44 45 65 75 500 620 720 760 1 1 1 1 0.5 0.5 0.5 0.5 51.7 56 62.2 69.2 2.0 1.9 1.8 1.6 1.52 1.6 1.8 2.2 70 63 58 52.5 1N5378B 1N5380B 1N5381B 1N5378B 1N5380B 1N5381B 95 114 123.5 100 120 130 105 126 136.5 12 10 10 90 170 190 800 1150 1250 1 1 1 0.5 0.5 0.5 76 91.2 98.8 1.5 1.3 1.2 2.5 2.5 2.5 47.5 39.5 36.6 1N5383B 1N5384B 1N5386B 1N5387B 1N5388B 1N5383B 1N5384B 1N5386B 1N5387B 1N5388B 142.5 152 171 180.5 190 150 160 180 190 200 157.5 168 189 199.5 210 8 8 5 5 5 330 350 430 450 480 1500 1650 1750 1850 1850 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 114 122 137 144 152 1.1 1.1 1.0 0.9 0.9 3.0 3.0 4.0 5.0 5.0 31.6 29.4 26.4 25 23.6 Devices listed in bold, italic are onsemi Preferred devices. Preferred devices are recommended choices for future use and best overall value. 7. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%. 8. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C). 9. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 7 (TA = 25°C +8°C, −2°C). 10. VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified in Note 7 (TA = 25°C +8°C, −2°C). 11. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 25°C at 3/8″ maximum from the device body. †The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available. www.onsemi.com 3 θ JL, JUNCTION‐TO‐LEAD THERMAL RESISTANCE (°C/W) 1N53 Series 40 30 20 L L 10 EQUAL CONDUCTION THROUGH EACH LEAD 0 0 0.2 0.4 0.6 0.8 L, LEAD LENGTH TO HEATSINK (INCH) 1 Figure 1. Typical Thermal Resistance θVZ , TEMPERATURE COEFFICIENT (mV/°C) @ I ZT TEMPERATURE COEFFICIENTS 10 8 6 4 2 RANGE 0 -2 3 4 7 5 6 8 VZ, ZENER VOLTAGE @ IZT (VOLTS) 9 10 Figure 2. Temperature Coefficient-Range for Units 3 to 10 Volts θVZ , TEMPERATURE COEFFICIENT (mV/°C) @ I ZT 300 200 100 RANGE 50 30 20 10 5 0 20 40 60 80 100 120 140 160 180 VZ, ZENER VOLTAGE @ IZT (VOLTS) 200 220 Figure 3. Temperature Coefficient-Range for Units 10 to 220 Volts www.onsemi.com 4 1N53 Series θ JL (t, D), TRANSIENT THERMAL RESISTANCE JUNCTION‐TO‐LEAD ( °C/W) 100 10 1 0.5 0.2 0.1 0.05 0.02 0.01 DUTY CYCLE, D = t1/t2 SINGLE PULSE D TJL = qJL(t)PPK REPETITIVE PULSES D TJL = qJL(t,D)PPK qJL(t,D) = D * qJL (∞)+(1−D) * qJL(t) [where qJL(t) is D = 0 curve] 0.1 PPK t1 D=0 0.01 t2 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t, TIME (SECONDS) Figure 4. Typical Thermal Response L, Lead Length = 3/8 Inch I r , PEAK SURGE CURRENT (AMPS) I r , PEAK SURGE CURRENT (AMPS) 40 20 PW=1ms* 10 PW=8.3ms* 4 2 1 0.4 *SQUARE WAVE PW=100ms* 0.2 0.1 4 6 8 10 20 30 40 10 VZ=3.3V 5 2 1 0.5 VZ=200V PLOTTED FROM INFORMATION GIVEN IN FIGURE 5 0.2 PW=1000ms* 3 30 20 60 80 100 0.1 200 1 10 NOMINAL VZ (V) Figure 5. Maximum Non-Repetitive Surge Current versus Nominal Zener Voltage (See Note 4) 100 PW, PULSE WIDTH (ms) 1000 Figure 6. Peak Surge Current versus Pulse Width (See Note 4) 1000 T=25°C T=25°C TC=25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 1000 100 10 1 100 10 1 0.1 0.1 1 2 3 4 5 6 7 8 VZ, ZENER VOLTAGE (VOLTS) 9 10 10 Figure 7. Zener Voltage versus Zener Current VZ = 3.3 thru 10 Volts 20 30 40 50 60 VZ, ZENER VOLTAGE (VOLTS) 70 Figure 8. Zener Voltage versus Zener Current VZ = 11 thru 75 Volts www.onsemi.com 5 80 I Z , ZENER CURRENT (mA) 1N53 Series 100 10 1 0.1 80 100 120 140 160 180 VZ, ZENER VOLTAGE (VOLTS) 200 220 Figure 9. Zener Voltage versus Zener Current VZ = 82 thru 200 Volts APPLICATION NOTE For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (DTJ) may be estimated. Changes in voltage, VZ, can then be found from: Since the actual voltage available from a given Zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: DV = qVZ DTJ qVZ, the Zener voltage temperature coefficient, is found from Figures 2 and 3. Under high power-pulse operation, the Zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 4 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 5 be exceeded. TL = qLA PD + TA qLA is the lead-to-ambient thermal resistance and PD is the power dissipation. Junction Temperature, TJ, may be found from: TJ = TL + DTJL DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 4 for a train of power pulses or from Figure 1 for dc power. DTJL = qJL PD www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SURMETIC 40, AXIAL LEAD CASE 017AA−01 ISSUE O DATE 23 SEP 2005 NOTES: 1. CONTROLLING DIMENSION: INCH 2. LEAD DIAMETER AND FINISH NOT CONTROLLED WITHIN DIMENSION F. 3. CATHODE BAND INDICATES POLARITY B D K F DIM A B D F K INCHES MIN MAX 0.330 0.350 0.130 0.145 0.037 0.043 −−− 0.050 1.000 1.250 MILLIMETERS MIN MAX 8.38 8.89 3.30 3.68 0.94 1.09 −−− 1.27 25.40 31.75 A SCALE 1:1 F K DOCUMENT NUMBER: 98AON21393D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped “CONTROLLED COPY” in red. NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 Case Outline Number: http://onsemi.com October, DESCRIPTION: 2002 − Rev. 0 PAGE 1 OFXXX 2 SURMETIC 40, AXIAL LEAD 1 DOCUMENT NUMBER: 98AON21393D PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION. REQ. BY M. LYALL. DATE 23 SEP 2005 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 01O Case Outline Number: 017AA onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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