1N5821G

1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Features •Extremely Low VF •Low Power Loss/High Efficiency •Low Stored Charge, Majority Carrier Conduction •Shipped in plastic bags, 500 per bag •Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS the part number •Pb-Free Packages are Available* Mechanical Characteristics: •Case: Epoxy, Molded •Weight: 1.1 Gram (Approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds •Polarity: Cathode indicated by Polarity Band AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1 MARKING DIAGRAM A 1N 582x YYWWG G A = Assembly Location 1N582x = Device Code x = 0, 1, or 2 YY = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 December, 2007 - Rev. 10 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 30 40 V Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Forward Current (Note 1) VR(equiv)  0.2 VR(dc), TL = 95°C (RqJA = 28°C/W, P.C. Board Mounting, see Note 5) IO Ambient Temperature Rated VR(dc), PF(AV) = 0 RqJA = 28°C/W TA Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) A 3.0 90 85 80 °C IFSM 80 (for one cycle) A TJ, Tstg -65 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *THERMAL CHARACTERISTICS (Note 5) Characteristic Thermal Resistance, Junction-to-Ambient Symbol Max Unit RqJA 28 °C/W Unit *ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25°C TL = 100°C iR 1N5820 1N5821 1N5822 0.370 0.475 0.850 0.380 0.500 0.900 0.390 0.525 0.950 V mA 2.0 20 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22. http://onsemi.com 2 2.0 20 2.0 20 1N5820, 1N5821, 1N5822 ORDERING INFORMATION Package Shipping† 1N5820 Axial Lead 500 Units/Bag 1N5820G Axial Lead (Pb-Free) 500 Units/Bag 1N5820RL Axial Lead 1500/Tape & Reel 1N5820RLG Axial Lead (Pb-Free) 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821G Axial Lead (Pb-Free) 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel 1N5821RLG Axial Lead (Pb-Free) 1500/Tape & Reel 1N5822 Axial Lead 500 Units/Bag 1N5822G Axial Lead (Pb-Free) 500 Units/Bag 1N5822RL Axial Lead 1500/Tape & Reel 1N5822RLG Axial Lead (Pb-Free) 1500/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 1N5820, 1N5821, 1N5822 NOTE 3 — DETERMINING MAXIMUM RATINGS use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = V(FM)  F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max)  RqJAPF(AV)  RqJAPR(AV)(1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RqJA = Junction-to-ambient thermal resistance EXAMPLE: Find TA(max) for 1N5821 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RqJA = 40°C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max)  RqJAPR(AV) VR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 108°C @ VR = 9.2 V and RqJA = 40°C/W. (2) Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W Substituting equation (2) into equation (1) yields: @ TA(max) = TR  RqJAPF(AV) (3) I (FM)  10 and I F(AV)  1.0A. I (AV) Step 4. Find TA(max) from equation (3). TA(max) = 108  (0.85) (40) = 74°C. **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR-prefix devices, using PF(AV) from Figure 6. Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For Table 1. Values for Factor F Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped*† Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 1.5 1.5 *Note that VR(PK)  2.0 Vin(PK). †Use line to center tap voltage for Vin. http://onsemi.com 4 1N5820, 1N5821, 1N5822 125 20 15 TR , REFERENCE TEMPERATURE (°C) TR , REFERENCE TEMPERATURE (° C) 125 10 8.0 115 105 RqJA (°C/W) = 70 50 95 40 28 85 75 15 10 115 8.0 105 RqJA (°C/W) = 70 50 95 40 28 85 75 3.0 2.0 4.0 5.0 7.0 10 20 15 3.0 4.0 5.0 7.0 15 10 30 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Maximum Reference Temperature 1N5820 Figure 2. Maximum Reference Temperature 1N5821 40 125 20 10 8.0 105 RqJA (°C/W) = 70 95 50 40 85 MAXIMUM TYPICAL 35 15 115 R qJL , THERMAL RESISTANCE JUNCTION-TO-LEAD (° C/W) TR , REFERENCE TEMPERATURE (° C) 20 30 25 20 15 10 BOTH LEADS TO HEATSINK, EQUAL LENGTH 5.0 28 0 75 4.0 5.0 7.0 10 15 30 20 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 VR, REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES) Figure 3. Maximum Reference Temperature 1N5822 Figure 4. Steady-State Thermal Resistance 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.3 0.2 0.1 The temperature of the lead should be measured using a ther‐ mocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL LEAD LENGTH = 1/4″ Ppk Ppk tp TIME t1 DUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp, etc. 0.05 0.03 0.02 0.01 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 Figure 5. Thermal Response http://onsemi.com 5 500 1.0 k 2.0 k 5.0 k 10 k 20 k PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 1N5820, 1N5821, 1N5822 10 7.0 5.0 NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL SINE WAVE I (FM)  p(ResistiveLoad) I (AV) 3.0 2.0 1.0 0.7 0.5 Capacitive Loads  RqS(A) 0.1 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 6. Forward Power Dissipation 1N5820-22 TC(A) TJ Mounting Method 1 P.C. Board where available copper surface is small. NOTE 5 — MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RqJA IN STILL AIR TC(K) TL(K) 1/8 1/4 1/2 3/4 RqJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 28 É É ÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉ É É É ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ L Mounting Method 3 P.C. Board with 2-1/2, x 2-1/2, copper surface. L L = 1/2″ Mounting Method 2 Lead Length, L (in) Mounting Method 3 TA(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heatsink to Ambient RqL = Thermal Resistance, Lead-to-Heatsink RqJ = Thermal Resistance, Junction-to-Case PD = Total Power Dissipation = PF + PR PF = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 42°C/W/in typically and 48°C/W/in maximum RqJ = 10°C/W typically and 16°C/W maximum The maximum lead temperature may be found as follows: TL = TJ(max)  n TJL where n TJL  RqJL · PD TJ ≈ 125°C 0.3 RqS(K) SQUARE WAVE 0.2 0.2 RqL(K) RqJ(K) PD TL(A) 5.0 10 20 RqJ(A) TA(A) dc 0.3 0.1 RqL(A) L L VECTOR PUSH-IN TERMINALS T-28 °C/W http://onsemi.com 6 BOARD GROUND PLANE 1N5820, 1N5821, 1N5822 100 IFSM , PEAK HALF-WAVE CURRENT (AMP) 50 30 20 TJ = 100°C 7.0 5.0 25°C 3.0 50 TL = 75°C f = 60 Hz 30 20 1 CYCLE SURGE APPLIED AT RATED LOAD CONDITIONS 10 1.0 2.0 5.0 7.0 10 3.0 20 50 70 100 30 NUMBER OF CYCLES 2.0 Figure 8. Maximum Non-Repetitive Surge Current 1.0 100 0.7 50 0.5 20 TJ = 125°C 10 IR , REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMP) 10 70 0.3 0.2 0.1 0.07 0.05 100°C 5.0 2.0 75°C 1.0 0.5 0.2 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.05 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1N5820 1N5821 1N5822 0.02 Figure 7. Typical Forward Voltage 0.01 0 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 500 Figure 9. Typical Reverse Current 1N5820 300 NOTE 6 — HIGH FREQUENCY OPERATION 200 1N5821 TJ = 25°C f = 1.0 MHz Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction di‐ ode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit ana‐ lysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) 100 1N5822 70 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Typical Capacitance http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G DATE 06/06/2000 SCALE 1:1 K D NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. A 1 2 B K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: DIM A B D K 98ASB42170B AXIAL LEAD INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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