1N5950B

1N5913B Series 3 W DO−41 Surmetict 30 Zener Voltage Regulators This is a complete series of 3 W Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead, transfer−molded plastic package that offers protection in all common environmental conditions. Features http://onsemi.com Cathode Anode • • • • • • Zener Voltage Range − 3.3 V to 200 V ESD Rating of Class 3 (>16 KV) per Human Body Model Surge Rating of 98 W @ 1 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional 1 W Package Pb−Free Packages are Available AXIAL LEAD CASE 59 PLASTIC STYLE 1 Mechanical Characteristics CASE: Void free, transfer−molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM A 1N 59xxB YYWWG G A = Assembly Location 1N59xxB = Device Number YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 260°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Rating Max. Steady State Power Dissipation @ TL = 75°C, Lead Length = 3/8″ Derate above 75°C Steady State Power Dissipation @ TA = 50°C Derate above 50°C Operating and Storage Temperature Range Symbol PD Value 3 24 PD 1 6.67 TJ, Tstg −65 to +200 Unit W mW/°C W mW/°C °C ORDERING INFORMATION Device 1N59xxB, G 1N59xxBRL, G Package Axial Lead (Pb−Free) Axial Lead (Pb−Free) Shipping † 2000 Units/Box 6000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 5 Publication Order Number: 1N5913B/D 1N5913B Series ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF IZM Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Breakdown Voltage Forward Current Forward Voltage @ IF Maximum DC Zener Current VZ VR IR VF IZT V IF I Zener Voltage Regulator http://onsemi.com 2 1N5913B Series ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Zener Voltage (Note 2) Device† (Note 1) 1N5913B, G 1N5917B, G 1N5919B, G 1N5920B, G 1N5921B, G 1N5923B, G 1N5924B, G 1N5925B, G 1N5926B, G 1N5927B, G 1N5929B, G 1N5930B, G 1N5931B, G 1N5932B, G 1N5933B, G 1N5934B, G 1N5935B, G 1N5936B, G 1N5937B, G 1N5938B, G 1N5940B, G 1N5941B, G 1N5942B, G 1N5943B, G 1N5944B, G 1N5946B, G 1N5947B, G 1N5948B, G 1N5950B, G 1N5951B, G 1N5952B, G 1N5953B, G 1N5954B, G 1N5955B, G 1N5956B, G Device Marking 1N5913B 1N5917B 1N5919B 1N5920B 1N5921B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 1N5946B 1N5947B 1N5948B 1N5950B 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 1N5956B VZ (Volts) Min 3.14 4.47 5.32 5.89 6.46 7.79 8.65 9.50 10.45 11.40 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 40.85 44.65 48.45 53.20 58.90 71.25 77.90 86.45 104.5 114 123.5 142.5 152 171 190 Nom 3.3 4.7 5.6 6.2 6.8 8.2 9.1 10 11 12 15 16 18 20 22 24 27 30 33 36 43 47 51 56 62 75 82 91 110 120 130 150 160 180 200 Max 3.47 4.94 5.88 6.51 7.14 8.61 9.56 10.50 11.55 12.60 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 45.15 49.35 53.55 58.80 65.10 78.75 86.10 95.55 115.5 126 136.5 157.5 168 189 210 @ IZT mA 113.6 79.8 66.9 60.5 55.1 45.7 41.2 37.5 34.1 31.2 25.0 23.4 20.8 18.7 17.0 15.6 13.9 12.5 11.4 10.4 8.7 8.0 7.3 6.7 6.0 5.0 4.6 4.1 3.4 3.1 2.9 2.5 2.3 2.1 1.9 Zener Impedance (Note 3) ZZT @ IZT W 10 5 2 2 2.5 3.5 4 4.5 5.5 6.5 9 10 12 14 17.5 19 23 28 33 38 53 67 70 86 100 140 160 200 300 380 450 600 700 900 1200 ZZK @ IZK W 500 500 250 200 200 400 500 500 550 550 600 600 650 650 650 700 700 750 800 850 950 1000 1100 1300 1500 2000 2500 3000 4000 4500 5000 6000 6500 7000 8000 mA 1 1 1 1 1 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @ VR mA Max 100 5 5 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Volts 1 1.5 3 4 5.2 6.5 7 8 8.4 9.1 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 32.7 35.8 38.8 42.6 47.1 56 62.2 69.2 83.6 91.2 98.8 114 121.6 136.8 152 IZM mA 454 319 267 241 220 182 164 150 136 125 100 93 83 75 68 62 55 50 45 41 34 31 29 26 24 20 18 16 13 12 11 10 9 8 7 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “G’’ suffix indicates Pb−Free package available. 1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. http://onsemi.com 3 1N5913B Series PD, STEADY STATE DISSIPATION (WATTS) 5 L = 1/8″ 4 3 L = 3/8″ L = LEAD LENGTH TO HEAT SINK 2 1 L = 1″ 0 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C) 180 200 Figure 1. Power Temperature Derating Curve θJL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD (° C/W) 30 20 10 7 5 3 2 D =0.5 0.2 0.1 0.05 0.02 0.01 D=0 0.0005 0.001 0.002 0.005 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). 0.01 0.02 0.05 t, TIME (SECONDS) 0.1 0.2 PPK t2 DUTY CYCLE, D =t1/t2 t1 1 0.7 0.5 SINGLE PULSE DTJL = qJL (t)PPK REPETITIVE PULSES DTJL = qJL (t,D)PPK 0.5 1 2 5 10 0.3 0.0001 0.0002 Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch IR , REVERSE LEAKAGE (μ Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE 1K RECTANGULAR NONREPETITIVE WAVEFORM TJ = 25°C PRIOR TO INITIAL PULSE 3 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 TA = 125°C PPK , PEAK SURGE POWER (WATTS) 500 300 200 100 50 30 20 10 0.1 0.2 0.3 0.5 TA = 125°C 0.002 0.001 0.0005 0.0003 1 23 5 10 PW, PULSE WIDTH (ms) 20 30 50 100 1 2 5 10 20 50 100 NOMINAL VZ (VOLTS) 200 400 1000 Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage http://onsemi.com 4 1N5913B Series APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = qLA PD + TA DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. DTJL = qJL PD qLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for qLA will vary and depends on the device mounting method. qLA is generally 30−40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (DTJ) may be estimated. Changes in voltage, VZ, can then be found from: DV = qVZ DTJ qVZ, the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. http://onsemi.com 5 1N5913B Series TEMPERATURE COEFFICIENT RANGES (90% of the Units are in the Ranges Indicated) θ VZ, TEMPERATURE COEFFICIENT (mV/° C) @ IZT 10 8 6 4 2 0 −2 −4 3 4 5 6 7 8 9 10 VZ, ZENER VOLTAGE @ IZT (VOLTS) 11 12 RANGE θ VZ, TEMPERATURE COEFFICIENT (mV/° C) @ IZT 1000 500 200 100 50 20 10 10 20 50 100 200 400 VZ, ZENER VOLTAGE @ IZT (VOLTS) 1000 Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts ZENER VOLTAGE versus ZENER CURRENT (Figures 7, 8 and 9) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 VZ, ZENER VOLTAGE (VOLTS) 8 9 10 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 VZ, ZENER VOLTAGE (VOLTS) 90 100 IZ, ZENER CURRENT (mA) Figure 7. VZ = 3.3 thru 10 Volts θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE (° C/W) 10 5 IZ , ZENER CURRENT (mA) 80 70 60 50 40 30 20 10 0 0 1/8 IZ , ZENER CURRENT (mA) Figure 8. VZ = 12 thru 82 Volts 2 1 0.5 0.2 0.1 100 150 200 250 300 350 VZ, ZENER VOLTAGE (VOLTS) 400 L L TL PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD 1/4 3/8 1/2 5/8 3/4 L, LEAD LENGTH TO HEAT SINK (INCH) 7/8 1 Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance http://onsemi.com 6 1N5913B Series PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. K F D A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE http://onsemi.com 7 1N5913B Series SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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