1PMT5927BT1G

1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE® Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. Features • • • • • • • • • • • • • Zener Breakdown Voltage: 6.2 − 47 V DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C Low Leakage < 5 mA ESD Rating of Class 3 (> 16 kV) per Human Body Model Low Profile − Maximum Height of 1.1 mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint − Footprint Area of 8.45 mm2 Supplied in 12 mm Tape and Reel Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes POWERMITE is JEDEC Registered as DO−216AA Cathode Indicated by Polarity Band These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: www.onsemi.com PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2 − 47 VOLTS 1 2 1: CATHODE 2: ANODE 1 2 POWERMITE CASE 457 MARKING DIAGRAM 1 CATHODE M xxB G M xxB G 2 ANODE = Date Code = Specific Device Code (See Table on Page 2) = Pb−Free Package 260°C for 10 Seconds ORDERING INFORMATION Device Package 1PMT59xxBT1G POWERMITE (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 December, 2018 − Rev. 5 1 Publication Order Number: 1PMT5920B/D 1PMT5920B Series MAXIMUM RATINGS Rating Symbol Value Unit °PD° RqJA 500 4.0 248 °mW mW/°C °C/W RqJanode 35 °C/W °PD° RqJcathode 3.2 23 W °C/W TJ, Tstg −55 to +150 °C DC Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead (Anode) Maximum DC Power Dissipation (Note 2) Thermal Resistance from Junction−to−Tab (Cathode) Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with recommended minimum pad size, PC board FR−4. 2. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Zener Voltage (Note 3) VR ZZT @ IZT (Note 4) ZZK @ IZK (Note 4) IZK (mA) (V) 5.0 4.0 (W) (W) (mA) 2.0 200 1.0 55.1 5.0 5.2 2.5 200 1.0 9.56 41.2 5.0 7.0 4.0 500 0.5 12 12.6 31.2 15 15.75 25 1.0 9.1 6.5 550 0.25 1.0 11.4 9.0 600 0.25 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 34B 22.8 24 35B 25.65 27 25.2 15.6 1.0 18.2 19 700 0.25 28.35 13.9 1.0 20.6 23 700 0.25 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 VZ @ IZT (Volts) IZT IR @ VR Max (mA) 6.51 60.5 6.8 7.14 8.64 9.1 27B 11.4 29B 14.25 1PMT5933BT1G 33B 1PMT5934BT1G 1PMT5935BT1G 1PMT5941BT1G Device* Device Marking Min Nom 1PMT5920BT1G 20B 5.89 6.2 1PMT5921BT1G 21B 6.46 1PMT5924BT1G 24B 1PMT5927BT1G 1PMT5929BT1G Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. www.onsemi.com 2 1PMT5920B Series TYPICAL CHARACTERISTICS 100 3 IZ, ZENER CURRENT (mA) P D , MAXIMUM POWER DISSIPATION (W) 3.5 2.5 2 TL 1.5 1 10 1 0.5 0 25 50 75 100 125 150 0.1 175 5 7 8 9 10 VZ, ZENER VOLTAGE (VOLTS) 6 T, TEMPERATURE (°C) Figure 2. VZ to 10 Volts 10 IZ , ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 qVZ, TEMPERATURE COEFFICIENT (mV/°C) Figure 1. Steady State Power Derating 8 VZ @ IZT 6 4 2 0 −2 0 10 20 30 40 50 60 70 80 VZ, ZENER VOLTAGE (VOLTS) 90 100 −4 2 4 ZZ , DYNAMIC IMPEDANCE (OHMS) qVZ, TEMPERATURE COEFFICIENT (mV/°C) 200 VZ @ IZT 100 70 50 30 20 10 6 8 10 VZ, ZENER VOLTAGE (VOLTS) 12 Figure 4. Zener Voltage − To 12 Volts Figure 3. VZ = 12 thru 47 Volts 10 11 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) 200 200 IZ(dc) = 1mA 100 70 50 30 20 10 7 5 3 2 10 mA 20 mA 5 Figure 5. Zener Voltage − 14 To 47 Volts 7 iZ(rms) = 0.1 IZ(dc) 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) Figure 6. Effect of Zener Voltage www.onsemi.com 3 70 100 1PMT5920B Series Z Z , DYNAMIC IMPEDANCE (OHMS) TYPICAL CHARACTERISTICS 1k TJ = 25°C iZ(rms) = 0.1 IZ(dc) 500 200 100 50 20 10 5 22 V 2 1 12 V 0.5 1 6.8 V 2 5 10 20 50 100 200 500 IZ, ZENER TEST CURRENT (mA) Figure 7. Effect of Zener Current C, CAPACITANCE (pF) 10,000 1000 MEASURED @ 0 V BIAS MEASURED @ 50% VR 100 10 1 10 VZ, REVERSE ZENER VOLTAGE (VOLTS) Figure 8. Capacitance versus Reverse Zener Voltage POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS POWERMITE CASE 457 ISSUE G DATE 12 JAN 2022 SCALE 4:1 GENERIC MARKING DIAGRAMS* 1 M XXXG 2 1 STYLE 1 1 M XXXG 2 STYLE 2 M XXXG 2 XXX = Specific Device Code M = Date Code G = Pb−Free Package STYLE 3 DOCUMENT NUMBER: DESCRIPTION: STYLE 1: PIN 1. CATHODE 2. ANODE 98ASB14853C POWERMITE STYLE 2: PIN 1. ANODE OR CATHODE 2. CATHODE OR ANODE (BI−DIRECTIONAL) STYLE 3: PIN 1. ANODE 2. CATHODE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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