2N3772G

2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features www.onsemi.com • Forward Biased Second Breakdown Current Capability • 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Symbol 2N3771 2N3772 Unit Collector−Emitter Voltage VCEO 40 60 Vdc Collector−Emitter Voltage VCEX 50 80 Vdc Collector−Base Voltage VCB 50 100 Vdc Emitter−Base Voltage VEB 5.0 7.0 Vdc Collector Current − Continuous Peak IC 30 30 20 30 Adc Base Current − IB 7.5 15 5.0 15 Adc Continuous Peak Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 150 0.855 W W/°C TJ, Tstg – 65 to + 200 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit qJC 1.17 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. © Semiconductor Components Industries, LLC, 2006 August, 2019 − Rev. 12 1 MARKING DIAGRAM TO−204AA (TO−3) CASE 1−07 STYLE 1 2N377x G A YY WW MEX 2N377xG AYYWW MEX = Device Code x = 1 or 2 = Pb−Free Package = Assembly Location = Year = Work Week = Country of Origin ORDERING INFORMATION Device Package Shipping 2N3771G TO−204 (Pb−Free) 100 Units / Tray 2N3772G TO−204 (Pb−Free) 100 Units / Tray Publication Order Number: 2N3771/D 2N3771, 2N3772 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2 and 3) (IC = 0.2 Adc, IB = 0) 2N3771 2N3772 VCEO(sus) 40 60 − − Vdc Collector−Emitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 W) 2N3771 2N3772 VCEX(sus) 50 80 − − Vdc Collector−Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 W) 2N3771 2N3772 VCER(sus) 45 70 − − Vdc Collector Cutoff Current (Note 2) (VCE = 30 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) (VCE = 25 Vdc, IB = 0) 2N3771 2N3772 − − 10 10 − − − − − 2.0 5.0 4.0 10 10 − − 2.0 5.0 − − 5.0 5.0 15 15 60 60 5.0 5.0 − − − − − − 2.0 1.4 4.0 4.0 − − 2.7 2.2 Collector Cutoff Current (Note 2) (VCE = 50 Vdc, VEB(off) = 1.5 Vdc) (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N3771 2N3772 2N6257 2N3771 2N3772 (VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (Note 2) (VCB = 50 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) 2N3771 2N3772 Emitter Cutoff Current (Note 2) (VBE = 5.0 Vdc, IC = 0) (VBE = 7.0 Vdc, IC = 0) 2N3771 2N3772 ICEO ICEV ICBO IEBO mAdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (Note 3) (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) 2N3771 2N3772 hFE 2N3771 2N3772 Collector−Emitter Saturation Voltage (IC = 15 Adc, IB = 1.5 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) 2N3771 2N3772 2N3771 2N3772 Base−Emitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) 2N3771 2N3772 VCE(sat) VBE(on) − Vdc Vdc *DYNAMIC CHARACTERISTICS (Note 2) Current−Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz) fT 0.2 − MHz Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 40 − − 3.75 2.5 − − SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive) (VCE = 40 Vdc) 2N3771 (VCE = 60 Vdc) 2N3772 2. Indicates JEDEC registered data. 3. Pulse Test: 300 ms, Rep. Rate 60 cps. www.onsemi.com 2 IS/b Adc 2N3771, 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Power Derating 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 P(pk) qJC(t) = r(t) qJC qJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.01 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 2. Thermal Response — 2N3771, 2N3772 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by TJ(max). IC, COLLECTOR CURRENT (AMP) 40 30 40 ms 2N3771 20 100 ms 2N3772, (dc) dc 200 ms TC = 25°C 1.0 ms BONDING WIRE LIMITED 7.0 THERMALLY LIMITED 5.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 PULSE CURVES APPLY 500 ms 2N3771 FOR ALL DEVICES 2N3772 2.0 2.0 3.0 5.0 7.0 10 50 70 100 1.0 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 Figure 3. Active−Region Safe Operating Area — 2N3771, 2N3772 www.onsemi.com 3 2N3771, 2N3772 VCC +30 V 10 5.0 25 ms RC +11 V 2.0 SCOPE 0 D1 51 -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 0.5 0.2 0.1 -4 V td 0.05 RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.02 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 0.01 0.3 3.0 0.5 0.7 1.0 2.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 4. Switching Time Test Circuit TJ = 25°C 10 C, CAPACITANCE (pF) 20 t, TIME (s) μ 30 2000 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 50 5.0 ts 1.0 0.5 20 Figure 5. Turn−On Time 100 2.0 VBE(off) = 5.0 V 1.0 t, TIME (s) μ RB VCC = 30 IC/IB = 10 TJ = 25°C tf 1000 Cib 700 Cob 500 300 0.2 0.1 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 200 0.1 30 0.5 10 20 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 0.2 Figure 6. Turn−Off Time VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN TJ = 150°C VCE = 4.0 V 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 100 Figure 7. Capacitance 500 300 200 50 20 30 2.0 TJ = 25°C 1.6 IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 Figure 9. Collector Saturation Region Figure 8. DC Current Gain www.onsemi.com 4 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z DATE 05/18/1988 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR STYLE 2: PIN 1. BASE 2. COLLECTOR CASE: EMITTER STYLE 3: PIN 1. GATE 2. SOURCE CASE: DRAIN STYLE 4: PIN 1. GROUND 2. INPUT CASE: OUTPUT STYLE 6: PIN 1. GATE 2. EMITTER CASE: COLLECTOR STYLE 7: PIN 1. ANODE 2. OPEN CASE: CATHODE STYLE 8: PIN 1. CATHODE #1 2. CATHODE #2 CASE: ANODE STYLE 9: PIN 1. ANODE #1 2. ANODE #2 CASE: CATHODE STYLE 5: PIN 1. CATHODE 2. EXTERNAL TRIP/DELAY CASE: ANODE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). 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