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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2N3904 / MMBT3904 / PZT3904
NPN General-Purpose Amplifier
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100
mA as a switch and to 100 MHz as an amplifier.
2N3904
PZT3904
MMBT3904
C
C
E
E
TO-92
SOT-23
EBC
Mark:1A
C
SOT-223
B
B
Ordering Information
Part Number
Marking
Package
Packing Method
Pack Quantity
2N3904BU
2N3904
TO-92 3L
Bulk
10000
2N3904TA
2N3904
TO-92 3L
Ammo
2000
2N3904TAR
2N3904
TO-92 3L
Ammo
2000
2N3904TF
2N3904
TO-92 3L
Tape and Reel
2000
2N3904TFR
2N3904
TO-92 3L
Tape and Reel
2000
MMBT3904
1A
SOT-23 3L
Tape and Reel
3000
PZT3904
3904
SOT-223 4L
Tape and Reel
2500
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
October 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
200
mA
-55 to 150
°C
IC
TJ, TSTG
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Maximum
Parameter
Total Device Dissipation
Unit
2N3904
MMBT3904(3)
PZT3904(4)
625
350
1,000
mW
2.8
8.0
mW/°C
Derate Above 25°C
5.0
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
357
125
°C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
www.fairchildsemi.com
2
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
Absolute Maximum Ratings(1), (2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
IBL
ICEX
40
V
IC = 10 μA, IE = 0
60
V
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
6.0
Base Cut-Off Current
VCE = 30 V, VEB = 3 V
50
nA
Collector Cut-Off Current
VCE = 30 V, VEB = 3 V
50
nA
V
(5)
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
40
IC = 1.0 mA, VCE = 1.0 V
70
IC = 10 mA, VCE = 1.0 V
100
IC = 50 mA, VCE = 1.0 V
60
IC =100 mA, VCE = 1.0V
30
300
IC = 10 mA, IB = 1.0 mA
0.2
IC = 50 mA, IB = 5.0 mA
0.3
IC = 10 mA, IB = 1.0 mA
0.65
IC = 50 mA, IB = 5.0 mA
0.85
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 100 kHz
8.0
pF
NF
Noise Figure
IC = 100 μA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
5.0
dB
VCC = 3.0 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1.0 mA
35
ns
35
ns
VCC = 3.0 V, IC = 10 mA,
IB1 = IB2 = 1.0 mA
200
ns
50
ns
fT
300
MHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
www.fairchildsemi.com
3
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
Electrical Characteristics
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
500
V CE = 5V
400
125 °C
300
25 °C
200
- 40 °C
100
0
0.1
IC
1
10
- COLLECTOR CURRENT (mA)
100
125 °C
0.1
25 °C
0.05
0.1
125 °C
VCE = 5V
1
10
- COLLECTOR CURRENT (mA)
25 °C
125 °C
0.2
0.1
100
1
10
I C - COLLECTOR CURRENT (mA)
100
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
10
500
f = 1.0 MHz
CAPACITANCE (pF)
VCB = 30V
10
1
0.1
25
- 40 °C
0.4
0.4
100
100
0.6
25 °C
0.6
0.1
1
10
I C - COLLECTOR CURRENT (mA)
1
0.8
- 40 °C
IC
ICBO- COLLECTOR CURRENT (nA)
- 40 °C
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)
β = 10
0.8
β = 10
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
1
0.15
50
75
100
125
TA - AMBIENT TEMPERATURE ( °C)
4
3
C ibo
2
C obo
1
0.1
150
1
10
REVERSE BIAS VOLTAGE (V)
100
Figure 6. Capacitance vs. Reverse Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
5
www.fairchildsemi.com
4
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
Typical Performance Characteristics
12
I C = 1.0 mA
R S = 200Ω
10
V CE = 5.0V
I C = 1.0 mA
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
12
I C = 50 μA
R S = 1.0 kΩ
8
I C = 0.5 mA
R S = 200Ω
6
4
2
I C = 100 μA, R S = 500 Ω
0
0.1
1
10
f - FREQUENCY (kHz)
10
I C = 5.0 mA
I C = 50 μA
8
6
I C = 100 μA
4
2
0
0.1
100
Figure 7. Noise Figure vs. Frequency
1
10
R S - SOURCE RESISTANCE ( kΩ
Ω)
100
Figure 8. Noise Figure vs. Source Resistance
h fe
θ
V CE = 40V
I C = 10 mA
1
10
100
f - FREQUENCY (MHz)
PD - POWER DISSIPATION (W)
fe
h
0
20
40
60
80
100
120
140
160
180
θ - DEGREES
- CURRENT GAIN (dB)
1
50
45
40
35
30
25
20
15
10
5
0
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
1000
0
Figure 9. Current Gain and Phase Angle vs.
Frequency
500
I B1 = I B2 =
VCC = 40V
t r - RISE TIME (ns)
TIME (nS)
15V
2.0V
10
10
I C - COLLECTOR CURRENT (mA)
100
I B1 = I B2 =
Ic
10
T J = 25°C
T J = 125°C
5
100
1
10
I C - COLLECTOR CURRENT (mA)
100
Figure 12. Rise Time vs. Collector Current
Figure 11. Turn-On Time vs. Collector Current
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
150
10
t d @ VCB = 0V
1
125
500
Ic
10
t r @ V CC = 3.0V
5
50
75
100
TEMPERATURE (o C)
Figure 10. Power Dissipation vs.
Ambient Temperature
40V
100
25
www.fairchildsemi.com
5
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
Typical Performance Characteristics (Continued)
T J = 25°C
I B1 = I B2 =
500
Ic
I B1 = I B2 =
10
t f - FALL TIME (ns)
t S - STORAGE TIME (ns)
500
100
T J = 125°C
10
5
VCC = 40V
100
T J = 25°C
10
1
10
I C - COLLECTOR CURRENT (mA)
5
100
Figure 13. Storage Time vs. Collector Current
V CE = 10 V
f = 1.0 kHz
T A = 25oC
100
10
0.1
1
I C - COLLECTOR CURRENT (mA)
1
10
I C - COLLECTOR CURRENT (mA)
100
Figure 14. Fall Time vs. Collector Current
h oe - OUTPUT ADMITTANCE ( μmhos)
500
h fe - CURRENT GAIN
T J = 125°C
Ic
10
100
10
V CE = 10 V
f = 1.0 kHz
T A = 25oC
10
1
0.1
1
I C - COLLECTOR CURRENT (mA)
10
Figure 16. Output Admittance
h ie - INPUT IMPEDANCE (kΩ )
100
h re - VOLTAGE FEEDBACK RATIO (x10
_4
)
Figure 15. Current Gain
V CE = 10 V
f = 1.0 kHz
T A = 25oC
10
1
0.1
0.1
1
I C - COLLECTOR CURRENT (mA)
10
V CE = 10 V
f = 1.0 kHz
T A = 25oC
7
5
4
3
2
1
0.1
1
I C - COLLECTOR CURRENT (mA)
10
Figure 18. Voltage Feedback Ratio
Figure 17. Input Impedance
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
10
www.fairchildsemi.com
6
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
Typical Performance Characteristics (Continued)
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
Ω
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
Figure 19. Delay and Rise Time Equivalent Test Circuit
3.0 V
10 < t1 < 500 μs
t1
10.9 V
275 Ω
Duty Cycle = 2%
Ω
10 KΩ
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
Figure 20. Storage and Fall Time Equivalent Test Circuit
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
www.fairchildsemi.com
7
6.70
6.20
0.10
B
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
1
6.10
1.90
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
C
0.08
C
0.10
0.00
10°
5°
GAGE
PLANE
R0.15±0.05
R0.15±0.05
10° TYP
0°
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
0.35
0.20
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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