2N5457G

2N5457, 2N5458 Preferred Device JFETs − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features http://onsemi.com 1 DRAIN • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross−Modulation and Intermodulation Distortion Unibloc Plastic Encapsulated Package Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage Reverse Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VDS VDG VGSR IG PD TJ Tstg Value 25 25 −25 10 310 2.82 135 −65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C 12 3 TO−92 CASE 29 STYLE 5 2N 545x AYWWG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N545x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5457 2N5457G 2N5458 2N5458G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping 1000 Units/Box 1000 Units/Box 1000 Units/Box 1000 Units/Box Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 5 Publication Order Number: 2N5457/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −10 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) Gate−Source Cutoff Voltage (VDS = 15 Vdc, iD = 10 nAdc) Gate−Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Forward Transfer Admittance (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Output Admittance Common Source (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. 2N5457 2N5458 |Yfs| |Yos| − Ciss − Crss − 1.5 3.0 pF 4.5 7.0 pF 10 50 1000 1500 3000 4000 5000 5500 mmhos 2N5457 2N5458 IDSS 1.0 2.0 3.0 6.0 5.0 9.0 mAdc 2N5457 2N5458 2N5457 2N5458 V(BR)GSS −25 IGSS − − VGS(off) VGS − − −2.5 −3.5 − − Vdc −0.5 −1.0 − − − − − 1.0 −200 −6.0 −7.0 nAdc Vdc − − Vdc Symbol Min Typ Max Unit mmhos http://onsemi.com 2 2N5457, 2N5458 TYPICAL CHARACTERISTICS For 2N5457 Only 14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.001 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 10 VDS = 15 V VGS = 0 f = 1 kHz Figure 1. Noise Figure versus Source Resistance 1.2 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0 VGS(off) ^ −1.2 V 1.2 VGS = 0 V 1.0 −0.2 V I D , DRAIN CURRENT (mA) 0.8 VGS(off) ^ −1.2 V VDS = 15 V 0.6 0.4 0.2 0 −1.2 −0.4 V −0.6 V −0.8 V −1.0 V 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 25 −0.8 −0.4 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0 Figure 2. Typical Drain Characteristics Figure 3. Common Source Transfer Characteristics http://onsemi.com 3 2N5457, 2N5458 TYPICAL CHARACTERISTICS For 2N5457 Only 5 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 4 VGS(off) ^ −3.5 V 3 −1 V 5 VGS(off) ^ −3.5 V 4 3 VDS = 15 V 2 2 −2 V −3 V 0 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 25 1 1 0 −5 −3 −2 −1 −4 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0 Figure 4. Typical Drain Characteristics Figure 5. Common Source Transfer Characteristics 10 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 8 VGS(off) ^ −5.8 V −1 V 6 −2 V 4 −3 V 2 −4 V −5 V 0 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 25 10 8 VGS(off) ^ −5.8 V 6 VDS = 15 V 4 2 0 −7 −6 −5 −4 −3 −2 −1 VGS, GATE − SOURCE VOLTAGE (VOLTS) 0 Figure 6. Typical Drain Characteristics Figure 7. Common Source Transfer Characteristics NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 4 2N5457, 2N5458 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V TYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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