2N5457_D75Z

G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 25 V VDG Drain-Gate Voltage VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units 2N5457-5459 625 5.0 125 *MMBF5457-5459 350 2.8 357 556 mW mW/°C °C/W °C/W 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min IG = 10 µA, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C 5457 VDS = 15 V, ID = 10 nA 5458 5459 VDS = 15 V, ID = 100 µA 5457 VDS = 15 V, ID = 200 µA 5458 VDS = 15 V, ID = 400 µA 5459 - 25 Typ Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cutoff Voltage VGS Gate-Source Voltage V - 1.0 - 200 - 6.0 - 7.0 - 8.0 nA nA V V V V V V 3.0 6.0 9.0 5.0 9.0 16 mA mA mA µmhos µmhos µmhos µmhos pF - 0.5 - 1.0 - 2.0 - 2.5 - 3.5 - 4.5 ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5457 5458 5459 1.0 2.0 4.0 SMALL SIGNAL CHARACTERISTICS Forward Transfer Conductance* gos Output Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz 5457 5458 5459 VDS = 15 V, VGS = 0, f = 1.0 kHz 10 5000 5500 6000 50 Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 4.5 7.0 Crss NF Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 1.5 3.0 pF Noise Figure VDS = 15 V, VGS = 0, f = 1.0 kHz, RG = 1.0 megohm, BW = 1.0 Hz 3.0 dB gfs 1000 1500 2000 5 *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2% Typical Characteristics Transfer Characteristics 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier Transfer Characteristics (continued) Typical Characteristics (continued) Transfer Characteristics Common Drain-Source Output Conductance vs. Drain Current Transfer Characteristics Parameter Interaction Transconductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Channel Resistance vs. Temperature Noise Voltage vs. Frequency Leakage Current vs. Voltage Capacitance vs. Voltage 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier 5 P D - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature 700 600 TO-92 500 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G