2N5555

ON Semiconductort 1 DRAIN JFET Switching N–Channel — Depletion MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg 3 GATE 2N5555 2 SOURCE Value 25 25 25 10 350 2.8 –65 to +150 –65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–11, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C) V(BR)GSS IGSS ID(off) 25 — — — — 1.0 10 2.0 Vdc nAdc nAdc µAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate–Source Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) Drain–Source On–Voltage (ID = 7.0 mAdc, VGS = 0) Static Drain–Source On Resistance (ID = 0.1 mAdc, VGS = 0) 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%. IDSS VGS(f) VDS(on) rDS(on) 15 — — — — 1.0 1.5 150 mAdc Vdc Vdc Ohms SMALL–SIGNAL CHARACTERISTICS Small–Signal Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) rds(on) Ciss Crss — — — 150 5.0 1.2 Ohms pF pF SWITCHING CHARACTERISTICS Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( , , VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi ( (VDD = 10 Vdc, ID(on) = 7.0 mAdc, , , VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi td(on) tr td(off) tf — — — — 5.0 5.0 15 10 ns ns ns ns © Semiconductor Components Industries, LLC, 2001 1 November, 2001 – Rev. 3 Publication Order Number: 2N5555/D 2N5555 PULSE WIDTH VDD 1.0 k PULSE GENERATOR (50 OHMS) 50 OHM COAXIAL CABLE 1.0 k 50 10 k 90% 50 OHM COAXIAL CABLE TEKTRONIX 567 SAMPLING SCOPE INPUT 50% 10% INPUT PULSE RISE TIME 90% 50% 10% VGS(on) VGS(off) INPUT PULSE FALL TIME Rin = 50 OHMS OUTPUT td(on) 10% 90% tr 90% tf td(off) 10% INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns DUTY CYCLE ≤ 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS Figure 1. Switching Times Test Circuit COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 100 brs @ IDSS 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS gis @ 0.25 IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.1 0.07 0.05 Figure 2. Input Admittance (yis) Figure 3. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 |bfs| @ IDSS |bfs| @ 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 gos @ IDSS bos @ IDSS and 0.25 IDSS gfs @ IDSS gfs @ 0.25 IDSS 0.05 0.02 0.01 10 20 30 gos @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 100 500 700 1000 Figure 4. Forward Transadmittance (yfs) http://onsemi.com 2 Figure 5. Output Admittance (yos) 2N5555 COMMON SOURCE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 1.0 350° 100 100 50° 0.9 200 300 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 400 500 600 0.6 900 800 700 900 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 320° ID = 0.25 IDSS 200 300 400 500 300° 60° 310° 50° ID = IDSS, 0.25 IDSS 800 600 400 300 200 100 0.0 700 500 0.1 900 0.2 300° 290° 280° 270° 260° 250° 240° 0.3 310° 0.7 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 6. S11s 30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20° Figure 7. S12s 10° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320° 50° 0.6 310° 50° 310° 60° 70° 80° 90° 100° 110° 120° 900 800 700 600 500 400 300 ID = IDSS 200 100 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 900 0.5 300° 290° 280° 270° 60° 70° 80° 90° 100° 110° 120° 300° 290° 280° 270° 260° 250° 240° 0.4 0.7 0.3 0.6 0.3 260° 250° 240° 0.4 0.5 130° 0.6 140° 150° 160° 170° 180° 190° 200° 210° 230° 130° 230° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 8. S21s http://onsemi.com 3 Figure 9. S22s 2N5555 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 20 30 gig @ IDSS, 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 10. Input Admittance (yig) Figure 11. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ 0.25 IDSS gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 gfg @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) gog @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 500 700 1000 Figure 12. Forward Transfer Admittance (yfg) Figure 13. Output Admittance (yog) http://onsemi.com 4 2N5555 COMMON GATE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 200 200 300 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 320° ID = 0.25 IDSS 400 500 600 400 500 600 700 700 800 900 310° 50° 0.03 310° 300 60° 70° 80° 90° 100° 110° 120° 130° 300° 290° 280° 270° 260° 250° 240° 230° 60° 70° 80° 90° 100° 110° 120° 130° 600 ID = IDSS 700 800 900 900 100 500 600 700 800 0.02 300° 290° 280° 270° 0.4 ID = IDSS 0.01 0.3 800 900 0.0 ID = 0.25 IDSS 0.01 260° 250° 240° 230° 0.02 0.03 220° 190° 200° 210° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 0.04 180° Figure 14. S11g 30° 40° 20° 10° 0° 0.5 100 100 0.3 ID = IDSS 310° 50° 350° 340° 330° 320° 40° 30° 20° Figure 15. S12g 10° 0° 1.5 1.0 100 0.9 350° 300 200 400 340° 500 600 700 800 900 310° 330° 320° 0.4 50° ID = IDSS, 0.25 IDSS 0.8 60° 70° 80° 90° 100° 110° 120° 130° 300° ID = 0.25 IDSS 290° 280° 900 900 270° 260° 250° 240° 230° 60° 70° 80° 90° 100° 110° 120° 130° 300° 290° 280° 270° 260° 250° 240° 230° 0.2 0.7 0.1 0.6 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 16. S21g http://onsemi.com 5 Figure 17. S22g 2N5555 PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 29–11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- A R P L SEATING PLANE B K XX G H V 1 D J C SECTION X–X N N STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE DIM A B C D G H J K L N P R V http://onsemi.com 6 2N5555 Notes http://onsemi.com 7 2N5555 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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