2N6038

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features http://onsemi.com • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS • Epoxy Meets UL 94 V−0 @ 0.125 in • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 8.0 100 40 320 1.5 12 – 65 to + 150 Unit Vdc 32 1 TO−225AA CASE 77 STYLE 1 Collector−Base Voltage VCBO Vdc MARKING DIAGRAM Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak VEBO IC IB PD PD TJ, Tstg Vdc Adc Apk mAdc W mW/°C W mW/°C °C Y WW 2N603x G YWW 2 N603xG = Year = Work Week = Device Code x = 4, 5, 6, 8, 9 = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 3.12 83.3 Unit °C/W °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 May, 2006 − Rev. 13 Publication Order Number: 2N6035/D (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICEO 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICEX 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 ICBO 2N6034 2N6035, 2N6038 2N6036, 2N6039 IEBO − − − − 0.5 0.5 0.5 2.0 mAdc − − − − − − 100 100 100 500 500 500 mAdc − − − 100 100 100 mA 40 60 80 − − − mA Vdc Symbol Min Max Unit Collector−Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector−Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) *Indicates JEDEC Registered Data. hFE 500 750 100 VCE(sat) − − VBE(sat) VBE(on) − 2.0 3.0 4.0 − 15,000 − − Vdc Vdc − 2.8 Vdc |hfe| Cob 2N6034, 2N6035, 2N6036 2N6038, 2N6039 25 − − pF − − 200 100 http://onsemi.com 2 (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 4.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA V2 approx +8.0 V 0 V1 approx −12 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 51 RB D1 +4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. VCC −30 V RC ts 2.0 SCOPE VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C TUT t, TIME ( μs) 1.0 0.8 0.6 0.4 PNP NPN 0.1 tf tr ≈ 8.0 k ≈ 60 td @ VBE(off) = 0 0.2 0.04 0.06 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 1. Switching Times Test Circuit Figure 2. Switching Times r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response http://onsemi.com 3 (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 ACTIVE−REGION SAFE−OPERATING AREA 1.0 7.0 5.0 3.0 2.0 100 ms 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 100 ms 1.0 ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6039 2N6038 7.0 20 10 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 IC, COLLECTOR CURRENT (AMP) dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 2N6036 2N6035 7.0 70 20 10 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 1.0 0.7 0.5 0.3 0.2 0.1 5.0 Figure 4. 2N6035, 2N6036 IC, COLLECTOR CURRENT (AMP) 5.0 ms 1.0 ms 5.0 ms 0.1 5.0 Figure 5. 2N6038, 2N6039 200 TC = 25°C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 4 and 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 C, CAPACITANCE (pF) 70 50 Cob 30 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Cib Figure 6. Capacitance PNP 2N6034, 2N6035, 2N6036 6.0 k 4.0 k hFE, DC CURRENT GAIN 3.0 k 2.0 k 25°C −55 °C 1.0 k 800 600 400 300 0.04 0.06 TC = 125°C VCE = 3.0 V 4.0 k hFE, DC CURRENT GAIN 3.0 k 6.0 k NPN 2N6038, 2N6039 TJ = 125°C VCE = 3.0 V 25°C 2.0 k −55 °C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 7. DC Current Gain http://onsemi.com 4 (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.4 TJ = 25°C 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 100 50 IC = 0.5 A 1.0 A 2.0 A 4.0 A VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 10 5.0 IB, BASE CURRENT (mA) 20 50 100 TJ = 25°C IC = 0.5 A 1.0 A 2.0 A 4.0 A Figure 8. Collector Saturation Region 2.2 TJ = 25°C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) 2.2 TJ = 25°C 1.8 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V 1.4 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages ORDERING INFORMATION Device 2N6034 2N6034G 2N6035 2N6035G 2N6036 2N6036G 2N6038 2N6038G 2N6039 2N6039G Package TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) TO−225AA TO−225AA (Pb−Free) 500 Units / Box Shipping http://onsemi.com 5 (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U Q F M C −A− 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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