2N6045G

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching applications. Features http://onsemi.com • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc • • • • • VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 = 100 Vdc (Min) - 2N6042, 2N6045 Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045 Monolithic Construction with Built-In Base-Emitter Shunt Resistors Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V Pb-Free Packages are Available* DARLINGTON, 8 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS, 75 WATTS TO-220AB CASE 221A-09 STYLE 1 ÎÎÎ Î ÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎ ÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage Symbol VCEO Value 60 Unit Vdc 2N6040 2N6043 2N6042 2N6045 100 60 Collector-Base Voltage 2N6040 2N6043 2N6042 2N6045 VCB Vdc 100 5.0 8.0 16 Emitter-Base Voltage Collector Current Base Current VEB IC IB Vdc Adc Continuous Peak 120 mAdc W W/°C °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 75 0.60 TJ, Tstg –65 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 MARKING DIAGRAM 2N604xG AYWW 2N604x = Device Code x = 0, 2, 3, or 5 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 November, 2007 - Rev. 8 Publication Order Number: 2N6040/D ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS *ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) THERMAL CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 3.0 Adc, IB = 12 mAdc) (IC = 8.0 Adc, IB = 80 Adc) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Characteristic Characteristic http://onsemi.com 2N6040, 2N6043, 2N6042, 2N6045 All Types 2N6040, 2N6043, 2N6042, 2N6045 All Types 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6042, 2N6045 2N6040/2N6042 2N6043/2N6045 VCEO(sus) Symbol Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| qJC qJA Cob hFE hfe 1000 1000 100 Min 60 100 300 4.0 1.67 Max 57 20.000 20,000 Max 20 20 200 200 200 300 200 2.8 4.5 2.0 2.0 4.0 2.0 20 20 20 20 2 - - mAdc °C/W °C/W Unit Unit Vdc Vdc Vdc Vdc mA mA mA pF - - PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 TA TC 4.0 80 PD, POWER DISSIPATION (WATTS) 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating 5.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA V2 approx + 8.0 V 0 V1 approx -12 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 51 RB D1 + 4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. VCC - 30 V RC 3.0 2.0 1.0 0.7 0.5 ts tf TUT t, TIME ( μs) SCOPE ≈ 8.0 k ≈ 120 0.3 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.1 TJ = 25°C PNP 0.07 td @ VBE(off) = 0 V NPN 0.05 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) tr 5.0 7.0 10 Figure 2. Switching Times Equivalent Circuit Figure 3. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) qJC(t) = r(t) qJC qJC = 1.67°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.05 0.02 SINGLE PULSE 0.01 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response http://onsemi.com 3 PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 20 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 500 ms 1.0 ms 5.0 ms 100 ms 0.5 0.2 0.1 0.05 0.02 1.0 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 20 30 2.0 3.0 50 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 10,000 hfe, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc C, CAPACITANCE (pF) 300 TJ = 25°C 200 Cob 100 70 50 PNP NPN 30 0.1 100 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 Cib Figure 6. Small-Signal Current Gain Figure 7. Capacitance PNP 2N6040, 2N6042 20,000 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 TJ = 150°C 25°C VCE = 4.0 V 20,000 NPN 2N6043, 2N6045 VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 25°C 1000 700 500 300 200 0.1 - 55°C TJ = 150°C - 55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 8. DC Current Gain http://onsemi.com 4 PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Collector Saturation Region 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.5 2.0 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.5 1.0 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages ORDERING INFORMATION Device 2N6040 2N6040G 2N6042 2N6042G 2N6043 2N6043G 2N6045 2N6045G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) 50 Units / Rail TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping http://onsemi.com 5 PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -TB 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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