2N6400

2N6400 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features http://onsemi.com • Glass Passivated Junctions with Center Gate Geometry for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts Pb−Free Packages are Available* SCRs 16 AMPERES RMS 50 thru 800 VOLTS G A K MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 1 2 3 x A Y WW = 0, 1, 2, 3, 4 or 5 = Assembly Location = Year = Work Week AY WW 640x PIN ASSIGNMENT 1 2 3 4 Cathode Anode Gate Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 1 December, 2004 − Rev. 3 Publication Order Number: 2N6400/D 2N6400 Series MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 On-State Current RMS (180° Conduction Angles; TC = 100°C) Average On-State Current (180° Conduction Angles; TC = 100°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 90°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 100°C) Forward Average Gate Power (t = 8.3 ms, TC = 100°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 100°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 200 400 600 800 IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM TJ Tstg 16 10 160 145 20 0.5 2.0 −40 to +125 −40 to +150 A A A A2s W W A °C °C Value Unit V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds Symbol RqJC TL Max 1.5 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM − − − − 10 2.0 mA mA ON CHARACTERISTICS *Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W) * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W) TC = 25°C TC = −40°C TC = 25°C TC = −40°C VTM IGT VGT − − VGD IH 0.2 − − tgt tq − − 15 35 − − − 0.7 − − 18 − 1.0 1.5 2.5 − 40 60 − ms ms V mA − − − − 9.0 − 1.7 30 60 V mA V Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125°C * Holding Current TC = 25°C (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) *TC = −40°C Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) TC = 25°C TJ = +125°C DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) TJ = +125°C *Indicates JEDEC Registered Data. dv/dt − 50 − V/ms http://onsemi.com 2 2N6400 Series Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − + Voltage IDRM at VDRM Forward Blocking Region (off state) 128 TC, MAXIMUM CASE TEMPERATURE (° C) P(AV) , AVERAGE POWER (WATTS) 124 120 116 112 dc 108 104 100 0 α = 30° 60° 90° 120° 180° 10 α α = CONDUCTION ANGLE 16 14 12 10 8.0 6.0 4.0 2.0 0 0 TJ ≈ 125°C 60° α = 30° 90° 120° 180° dc α α = CONDUCTION ANGLE 5.0 6.0 1.0 2.0 3.0 4.0 7.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 10 7.0 5.0 6.0 1.0 2.0 3.0 4.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 2N6400 Series 200 100 70 iTM , INSTANTANEOUS ON−STATE FORWARD CURRENT (AMPS) 50 30 20 TJ = 25°C 10 7.0 5.0 3.0 2.0 160 I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE 150 125°C 1.0 0.7 0.5 0.3 0.2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 4.0 3.2 3.6 vTM, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 4.4 140 130 TJ = 125°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 1.0 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES 120 110 Figure 3. On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZqJC(t) = RqJC • r(t) Figure 5. Thermal Response http://onsemi.com 4 2N6400 Series TYPICAL CHARACTERISTICS 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 200 100 I GT, GATE TRIGGER CURRENT (mA) OFF-STATE VOLTAGE = 12 V RL = 50 W TJ = −40°C i GT, PEAK GATE CURRENT (mA) 25°C 10 125°C 1 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 6. Typical Gate Trigger Current versus Pulse Width Figure 7. Typical Gate Trigger Current versus Junction Temperature VGT, GATE TRIGGER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 95 110 125 100 IH , HOLDING CURRENT (mA) 10 1 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Typical Holding Current versus Junction Temperature ORDERING INFORMATION Device 2N6400 2N6401 2N6401G 2N6402 2N6403 2N6404 2N6405 2N6405G Package TO−220AB TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB TO−220AB TO−220AB TO−220AB (Pb−Free) 500 Units / Box Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 2N6400 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA B 4 F C T A S −T− SEATING PLANE Q 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 H K Z L V G D N U R J STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N6400/D