2N6497

2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage − • • • 5 AMPERE POWER TRANSISTORS NPN SILICON 250 VOLTS − 80 WATTS VCEO(sus) = 250 Vdc (Min) Excellent DC Current Gain − hFE = 10−75 @ IC = 2.5 Adc Low Collector−Emitter Saturation Voltage @ IC = 2.5 Adc − VCE(sat) = 1.0 Vdc (Max) Pb−Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit VCEO 250 Vdc Collector−Base Voltage VCB 350 Vdc Emitter−Base Voltage VEB 6.0 Vdc Collector Current − Continuous − Peak IC 5.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 80 0.64 W W/°C TJ, Tstg −65 to +150 °C Symbol Max Unit RqJC 1.56 _C/W Collector−Emitter Voltage Operating and Storage Junction Temperature Range 4 TO−220AB CASE 221A STYLE 1 1 2 3 2N6497 G A Y WW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2N6497G AYWW = = = = = Device Code Pb−Free Package Assembly Location Year Work Week ORDERING INFORMATION Package Shipping 2N6497 Device TO−220AB 50 Units / Rail 2N6497G TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 13 1 Publication Order Number: 2N6497/D 2N6497 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Typ Max Unit VCEO(sus) 250 − − Vdc − − − − 1.0 10 − − 1.0 10 3.0 − − 75 − − − − − 1.0 5.0 − − − − 1.5 2.5 5.0 − − Cob − − 150 pF Rise Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc) tr − 0.4 1.0 ms Storage Time (VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc) ts − 1.4 2.5 Fall Time (VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc) tf − 0.45 1.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 25 mAdc, IB = 0) Collector Cutoff Current (VCE = 350 Vdc, VBE(off) = 1.5 Vdc) (VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEX Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 2.5 Adc, VCE = 10 Vdc) (IC = 5.0 Adc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 2.5 Adc, IB = 500 mAdc) (IC = 5.0 Adc, IB = 2.0 Adc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) MHz SWITCHING CHARACTERISTICS ms ms 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. VCC + 125 V 25 ms 1.0 0.7 0.5 RC [ 50 + 11 V 0.3 SCOPE − 9.0 V tr, tf v 10 ns DUTY CYCLE = 1.0% t, TIME (s) μ RB [ 20 0 D1 − 5.0 V 0.2 tr 0.1 0.07 0.05 0.03 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCC = 125 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 5.0 V 0.02 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA 0.01 0.05 0.07 0.1 Figure 1. Switching Time Test Circuit 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Turn−On Time http://onsemi.com 2 5.0 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6497 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.1 P(pk) 0.05 t1 0.03 SINGLE PULSE t2 SINGLE PULSE 0.01 0.02 0.01 0.01 RqJC(max) = 1.56°C/W 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. IC, COLLECTOR CURRENT (AMP) 10 5.0 dc 2.0 5.0 ms 1.0 ms 100 ms 1.0 TC = 25°C 0.5 BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.2 0.1 0.05 0.02 CURVES APPLY BELOW RATED VCEO 5.0 7.0 10 20 30 50 70 100 200 300 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 500 Figure 4. Active−Region Safe Operating Area 100 ts t, TIME (s) μ 3.0 VCC = 125 V IC/IB = 5.0 TJ = 25°C POWER DERATING FACTOR (%) 10 7.0 5.0 2.0 1.0 0.7 0.5 0.3 tf 0.2 0.1 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 60 THERMAL DERATING 40 20 0 5.0 SECOND BREAKDOWN DERATING 80 0 Figure 5. Turn−Off Time 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 6. Power Derating http://onsemi.com 3 140 160 100 TJ = 150°C VCE = 10 V 70 hFE , DC CURRENT GAIN VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2N6497 50 25°C 30 20 −55 °C 10 7.0 5.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 4.0 TJ = 25°C 3.2 2.4 1.6 IC = 1.0 A 0 0.01 0.02 5.0 Figure 7. DC Current Gain θV, TEMPERATURE COEFFICIENTS (mV/°C) V, VOLTAGE (VOLTS) TJ = 25°C 1.0 VBE(sat) @ IC/IB = 5.0 0.8 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 5.0 0.2 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC/IB = 2.5 1.0 2.0 3.0 +3.0 2.0 5.0 10 *APPLIES FOR IC/IB v 5.0 hFE@VCE + 10V 3 +2.0 +1.0 *qVC for VCE(sat) 25°C to 150°C 0 −55 °C to 25°C −1.0 −2.0 25°C to 150°C qVB for VBE −55 to 25°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Figure 9. “On” Voltages Figure 10. Temperature Coefficients 5.0 1000 700 500 VCE = 200 V 101 100°C C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) μ 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMP) TJ = 150°C 100 10−2 −0.1 0.05 IC, COLLECTOR CURRENT (AMP) 102 10−1 5.0 A +4.0 −3.0 0.05 0.07 0.1 104 103 3.0 A Figure 8. Collector Saturation Region 1.4 1.2 2.0 A 0.8 Cib 300 200 TJ = 25°C 100 70 50 Cob 30 25°C REVERSE −0.2 20 FORWARD 0 +0.2 +0.4 10 0.4 0.6 1.0 +0.6 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cutoff Region 2.0 4.0 6.0 10 20 40 60 100 VR, REVERSE VOLTAGE (VOLTS) Figure 12. Capacitance http://onsemi.com 4 200 400 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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